Works matching DE "PHASE change memory"

Results: 296

Atomistic Simulations of Phase Change Materials for Electronic Memories.

Published in:

International Journal of Nanoscience, 2019, v. 18, n. 3/4, p. N.PAG, doi. 10.1142/S0219581X19400829

By:

Bernasconi, M.

Publication type:

Article

Fragile-to-Strong Crossover in Supercooled Liquid Ag-In-Sb-Te Studied by Ultrafast Calorimetry.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 30, p. 4851, doi. 10.1002/adfm.201501607

By:

Orava, Jiri;
Hewak, Daniel W.;
Greer, A. Lindsay

Publication type:

Article

The Study of Crystallization Kinetics and Chemical Changes in Ge4Sb4Te5 through Transmission Electron Microscope.

Published in:

Microscopy & Microanalysis, 2024, v. 30, p. 1, doi. 10.1093/mam/ozae044.838

By:

Singh, Manish Kumar;
Ghosh, Chanchal;
Watt, John;
Carter, C Barry;
Silva, Helena

Publication type:

Article

Phase-Change Materials; the Challenges for TEM.

Published in:

Microscopy & Microanalysis, 2019, p. 1904, doi. 10.1017/S1431927618010000

By:

Tripathi, Shalini;
Janish, Matthew;
Dirisaglik, Faruk;
Cywar, Adam;
Zhu, Yu;
Jungjohann, Katie;
Silva, Helena;
Carter, C. Barry

Publication type:

Article

Enhancing the security of memory in cloud infrastructure through in‐phase change memory data randomisation.

Published in:

IET Computers & Digital Techniques (Wiley-Blackwell), 2021, v. 15, n. 5, p. 321, doi. 10.1049/cdt2.12023

By:

Zhou, Xianzhong;
Wang, Ying

Publication type:

Article

Enhanced Readout Reliability in Phase Change Memory with a Dual-Sensing-Margin Offset-Compensated Sense Amplifier.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 22, p. 4488, doi. 10.3390/electronics13224488

By:

Wu, Qingyu;
Xie, Chenchen;
Song, Sannian;
Ding, Xing;
Li, Xi;
Song, Zhitang

Publication type:

Article

Analysis of Influencing Factors on Multilevel Storage Performance in Phase-Change Random Access Memory.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 19, p. 3802, doi. 10.3390/electronics13193802

By:

Wang, Zhiyu;
Cai, Daolin

Publication type:

Article

A Streaming Data Processing Architecture Based on Lookup Tables.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 12, p. 2725, doi. 10.3390/electronics12122725

By:

Yuemaier, Aximu;
Chen, Xiaogang;
Qian, Xingyu;
Dai, Weibang;
Li, Shunfen;
Song, Zhitang

Publication type:

Article

Design for Ultrahigh-Density Vertical Phase Change Memory: Proposal and Numerical Investigation.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 12, p. 1822, doi. 10.3390/electronics11121822

By:

Lei, Xin-Qing;
Zhu, Jia-He;
Wang, Da-Wei;
Zhao, Wen-Sheng

Publication type:

Article

Bidirectional Electric-Induced Conductance Based on GeTe/Sb 2 Te 3 Interfacial Phase Change Memory for Neuro-Inspired Computing.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 21, p. 2692, doi. 10.3390/electronics10212692

By:

Kang, Shin-young;
Jin, Soo-min;
Lee, Ju-young;
Woo, Dae-seong;
Shim, Tae-hun;
Nam, In-ho;
Park, Jea-gun;
Sutou, Yuji;
Song, Yun-heub

Publication type:

Article

TA-CLOCK: Tendency-Aware Page Replacement Policy for Hybrid Main Memory in High-Performance Embedded Systems.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 9, p. 1111, doi. 10.3390/electronics10091111

By:

Choi, Jun Hyeong;
Kim, Kyung Min;
Kwak, Jong Wook;
Lim, Seung-Ho

Publication type:

Article

Q-Selector-Based Prefetching Method for DRAM/NVM Hybrid Main Memory System.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 12, p. 2158, doi. 10.3390/electronics9122158

By:

Kim, Jeong-Geun;
Kim, Shin-Dug;
Yoon, Su-Kyung

Publication type:

Article

Challenges and Applications of Emerging Nonvolatile Memory Devices.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 6, p. 1029, doi. 10.3390/electronics9061029

By:

Banerjee, Writam

Publication type:

Article

An Energy-Efficient and Fast Scheme for Hybrid Storage Class Memory in an AIoT Terminal System.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 6, p. 1013, doi. 10.3390/electronics9061013

By:

Sun, Hao;
Chen, Lan;
Hao, Xiaoran;
Liu, Chenji;
Ni, Mao

Publication type:

Article

Error-Vulnerable Pattern-Aware Binary-to-Ternary Data Mapping for Improving Storage Density of 3LC Phase Change Memory.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 4, p. 626, doi. 10.3390/electronics9040626

By:

Hong, Jeong Beom;
Lee, Young Sik;
Kim, Yong Wook;
Han, Tae Hee

Publication type:

Article

Mirror-symmetric Magneto-optical Kerr Rotation using Visible Light in [(GeTe)2(Sb2Te3)1]n Topological Superlattices.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep05727

By:

Do Bang;
Hiroyuki Awano;
Junji Tominaga;
Kolobov, Alexander V.;
Fons, Paul;
Yuta Saito;
Kotaro Makino;
Takashi Nakano;
Muneaki Hase;
Yukihiko Takagaki;
Giussani, Alessandro;
Calarco, Raffaella;
Shuichi Murakami

Publication type:

Article

Recipe for ultrafast and persistent phase-change memory materials.

Published in:

NPG Asia Materials, 2020, v. 12, n. 1, p. 1, doi. 10.1038/s41427-020-00246-z

By:

Ding, Keyuan;
Chen, Bin;
Chen, Yimin;
Wang, Junqiang;
Shen, Xiang;
Rao, Feng

Publication type:

Article

Influence of the Composition on the Thermoelectric and Electro-physical Properties of Ge-Sb-Te Thin Films for Phase Change Memory Application.

Published in:

Journal of Nano- & Electronic Physics, 2016, v. 8, n. 3, p. 1, doi. 10.21272/jnep.8(3).03033

By:

Lazarenko, P. I.;
Sherchenkov, A. A.;
Kozyukhin, S. A.;
Terekhov, D. Y.;
Yakubov, A. O.;
Babich, A. V.;
Shuliatyev, A. S.;
Sagunova, I. V.;
Redichev, E. N.

Publication type:

Article

The inherent adversarial robustness of analog in-memory computing.

Published in:

Nature Communications, 2025, v. 16, n. 1, p. 1, doi. 10.1038/s41467-025-56595-2

By:

Lammie, Corey;
Büchel, Julian;
Vasilopoulos, Athanasios;
Le Gallo, Manuel;
Sebastian, Abu

Publication type:

Article

Rapid learning with phase-change memory-based in-memory computing through learning-to-learn.

Published in:

Nature Communications, 2025, v. 16, n. 1, p. 1, doi. 10.1038/s41467-025-56345-4

By:

Ortner, Thomas;
Petschenig, Horst;
Vasilopoulos, Athanasios;
Renner, Roland;
Brglez, Špela;
Limbacher, Thomas;
Piñero, Enrique;
Linares-Barranco, Alejandro;
Pantazi, Angeliki;
Legenstein, Robert

Publication type:

Article

An antiferromagnetic spin phase change memory.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-49451-2

By:

Yan, Han;
Mao, Hongye;
Qin, Peixin;
Wang, Jinhua;
Liang, Haidong;
Zhou, Xiaorong;
Wang, Xiaoning;
Chen, Hongyu;
Meng, Ziang;
Liu, Li;
Zhao, Guojian;
Duan, Zhiyuan;
Zhu, Zengwei;
Fang, Bin;
Zeng, Zhongming;
Bettiol, Andrew A.;
Zhang, Qinghua;
Tang, Peizhe;
Jiang, Chengbao;
Liu, Zhiqi

Publication type:

Article

Influence of 2D CuxAl(100−x) electrodes on the CuxAl(100−x)/Cu21(SiO2)79/W memristive device.

Published in:

Functional Materials Letters, 2024, v. 17, n. 4, p. 1, doi. 10.1142/S1793604724510184

By:

Gu, Bin;
Wen, Guangyu;
Zhang, Bo;
Rodriguez-Pereira, Jhonatan;
Wagner, Tomas

Publication type:

Article

A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices.

Published in:

Functional Materials Letters, 2018, v. 11, n. 2, p. -1, doi. 10.1142/S1793604718500236

By:

Zheng, Pingping;
Zhang, Xuejiao;
Sun, Bai;
Mao, Shuangsuo;
Zhu, Shouhui;
Xia, Yudong;
Zhao, Yong;
Yu, Zhou

Publication type:

Article

Post-silicon nano-electronic device and its application in brain-inspired chips.

Published in:

Frontiers in Neurorobotics, 2022, v. 16, p. 1, doi. 10.3389/fnbot.2022.948386

By:

Yi Lv;
Houpeng Chen;
Qian Wang;
Xi Li;
Chenchen Xie;
Zhitang Song

Publication type:

Article

A Brain-Inspired Homeostatic Neuron Based on Phase-Change Memories for Efficient Neuromorphic Computing.

Published in:

Frontiers in Neuroscience, 2021, v. 15, p. 1, doi. 10.3389/fnins.2021.709053

By:

Muñoz-Martin, Irene;
Bianchi, Stefano;
Hashemkhani, Shahin;
Pedretti, Giacomo;
Melnic, Octavian;
Ielmini, Daniele

Publication type:

Article

Non-linear Memristive Synaptic Dynamics for Efficient Unsupervised Learning in Spiking Neural Networks.

Published in:

Frontiers in Neuroscience, 2021, v. 14, p. N.PAG, doi. 10.3389/fnins.2021.580909

By:

Brivio, Stefano;
Ly, Denys R. B.;
Vianello, Elisa;
Spiga, Sabina

Publication type:

Article

Thermodynamic Modeling of the Cu-Sb-Se System.

Published in:

Journal of Phase Equilibria & Diffusion, 2023, v. 44, n. 6, p. 687, doi. 10.1007/s11669-023-01074-8

By:

Liu, Runlin;
Wang, Jiong;
Cui, Dongyu

Publication type:

Article

Thermodynamic Modelling of the Te-X (X = Cu, Ga, Li, Sr) Systems.

Published in:

Journal of Phase Equilibria & Diffusion, 2022, v. 43, n. 2, p. 193, doi. 10.1007/s11669-022-00950-z

By:

Yu, Shangzhao;
Wang, Jiong;
Cui, Dongyu;
Chen, Shanxiong;
Wu, Qing;
Du, Yong

Publication type:

Article

Enhanced Thermal Stability and Suppressed Resistance Drift of Sb70Se30 Phase-Change Thin Films by Adding HfO2 Interlayers.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 4, p. 2084, doi. 10.1007/s11664-023-10863-3

By:

Wang, Kangyao;
Chen, Leng

Publication type:

Article

Structural Transformation of Thin Ge2Sb2Te5<Ag> Films Produced by Ion-Plasma Co-Sputtering Under Laser Irradiation.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 4, p. 2492, doi. 10.1007/s11664-022-10204-w

By:

Prikhodko, O. Yu.;
Ismailova, G. A.;
Zhakypov, A. S.;
Kolobov, A. V.;
Turmanova, K. N.;
Nemkaeva, R. R.;
Maksimova, S. Ya.;
Tolepov, Zh. K.;
Peshaya, S. L.

Publication type:

Article

Study on the Crystallization Behavior of Sb2Te Thin Films for Phase-Change Memory Applications.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 2, p. 1493, doi. 10.1007/s11664-022-10113-y

By:

Kang, Lei;
Yin, Haiqing;
Chen, Leng

Publication type:

Article

A Superlattice Interfacial Phase Change Material with Low Power Consumption.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 11, p. 6238, doi. 10.1007/s11664-022-09888-x

By:

Zhang, Bokai;
Zhao, Peng;
Cheng, Xiaomin;
He, Qiang;
Xu, Ming;
Miao, Xiangshui

Publication type:

Article

Physical Properties and Structural Characterization of a Sb100−xErx Binary System.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 10, p. 5790, doi. 10.1007/s11664-022-09833-y

By:

Wu, Weihua;
Huang, Yufeng;
Xu, Shengqing;
Gu, Han;
Zhou, Xiaochen;
Zhu, Xiaoqin;
Zhai, Jiwei

Publication type:

Article

C/Sb Superlattice-Like Films with High Thermal Stability and Low Power Consumption for Phase-Change Memory.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 10, p. 5594, doi. 10.1007/s11664-022-09797-z

By:

Zeng, Xiaotian;
Zhu, Xiaoqin;
Hu, Yifeng;
Song, Zhitang

Publication type:

Article

Thermodynamic Modeling of the Ge-X (X = As, Se, S, P) Systems.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 5, p. 2114, doi. 10.1007/s11664-022-09474-1

By:

Chen, Shanxiong;
Wang, Jiong;
Yu, Shangzhao;
Hu, Biao;
Wu, Qing;
Du, Yong

Publication type:

Article

Accurate Phase Change Behavior Characterization Of Ultrathin Sb-Rich Films Based On Superlattice-like Al/Ge10Sb90 System.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 1, p. 190, doi. 10.1007/s11664-021-09271-2

By:

Xue, Jianzhong;
Sui, Yongxing;
Zhu, Xiaoqin;
Zhang, Jianhao;
Wu, Weihua;
Zou, Hua

Publication type:

Article

Aude Demessence.

Published in:: Angewandte Chemie, 2022, v. 134, n. 17, p. 1, doi. 10.1002/ange.202202824
Publication type:: Article

Memory switching of ZnGa2Te4 thin films.

Published in:

Journal of Materials Science, 2013, v. 48, n. 3, p. 1134, doi. 10.1007/s10853-012-6850-z

By:

Sakr, G.;
Fouad, S.;
Yahia, I.;
Abdel Basset, D.

Publication type:

Article

Amorphous structure melt-quenched from defective GeSbTe.

Published in:

Journal of Materials Science, 2012, v. 47, n. 21, p. 7635, doi. 10.1007/s10853-012-6607-8

By:

Sun, Zhimei

Publication type:

Article

Sputter‐grown GeTe/Sb2Te3 superlattice interfacial phase change memory for low power and multi‐level‐cell operation.

Published in:

Electronics Letters (Wiley-Blackwell), 2022, v. 58, n. 1, p. 38, doi. 10.1049/ell2.12337

By:

Jin, Soo‐Min;
Kang, Shin‐Young;
Kim, Hea‐Jee;
Lee, Ju‐Young;
Nam, In‐Ho;
Shim, Tae‐Hun;
Song, Yun‐Heub;
Park, Jea‐Gun

Publication type:

Article

Low-complexity multi-symbol detection algorithm for telemetry PCM/FM signal.

Published in:

Application Research of Computers / Jisuanji Yingyong Yanjiu, 2013, v. 30, n. 10, p. 3065, doi. 10.3969/j.issn.1001-3695.2013.10.045

By:

WANG Li;
YUAN Fu;
ZHENG Lin-hua;
XIANG Liang-jun

Publication type:

Article

Conversion of p–n conduction type by spinodal decomposition in Zn-Sb-Bi phase-change alloys.

Published in:

NPG Asia Materials, 2020, v. 12, n. 1, p. 1, doi. 10.1038/s41427-020-0197-8

By:

Wang, Guoxiang;
Shi, Haizhou;
Lotnyk, Andriy;
Shi, Daotian;
Wang, Rongping

Publication type:

Article

Normal-to-topological insulator martensitic phase transition in group-IV monochalcogenides driven by light.

Published in:

NPG Asia Materials, 2020, v. 12, n. 1, p. 1, doi. 10.1038/s41427-019-0188-9

By:

Zhou, Jian;
Zhang, Shunhong;
Li, Ju

Publication type:

Article

Study on Texture Formation of Sb 2 Te Thin Films for Phase Change Memory Applications.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 3, p. 377, doi. 10.3390/cryst13030377

By:

Kang, Lei;
Chen, Leng

Publication type:

Article

Enhancing the Thermal Stability and Reducing the Resistance Drift of Sb Phase Change Films by Adding In 2 Se 3 Interlayers.

Published in:

Coatings (2079-6412), 2023, v. 13, n. 5, p. 927, doi. 10.3390/coatings13050927

By:

Su, Feng;
Hu, Yifeng;
Zhu, Xiaoqin;
Lai, Tianshu

Publication type:

Article

The Electrical and Structural Properties of Nitrogen Ge1Sb2Te4 Thin Film.

Published in:

Coatings (2079-6412), 2018, v. 8, n. 4, p. 117, doi. 10.3390/coatings8040117

By:

Osiac, Mariana

Publication type:

Article

Simultaneous emulation of synaptic and intrinsic plasticity using a memristive synapse.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-30432-2

By:

Sung, Sang Hyun;
Kim, Tae Jin;
Shin, Hyera;
Im, Tae Hong;
Lee, Keon Jae

Publication type:

Article

TRANSIENT AND CYCLIC EFFECTS ON A PCM-COOLED MOBILE DEVICE.

Published in:

Thermal Science, 2015, v. 19, n. 5, p. 1723, doi. 10.2298/TSCI121206112T

By:

Chih Ping TSO;
Fock Lai TAN;
JONY, Jony

Publication type:

Article

Overview of the Role of Alloying Modifiers on the Performance of Phase Change Memory Materials.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 1, p. 1, doi. 10.1007/s11664-020-08590-0

By:

Kang, Lei;
Chen, Leng

Publication type:

Article

Crystallization and Resistance Behavior of MgSb/Sb Multilayer Thin Films for Memory Application.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 2, p. 980, doi. 10.1007/s11664-019-07800-8

By:

Sun, Song;
Hu, Yifeng;
Xu, Yongkang;
Lai, Tianshu

Publication type:

Article