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High Temperature Thermal Conductivity of Amorphous Al<sub>2</sub> O<sub>3</sub> Thin Films Grown by Low Temperature ALD.
- Published in:
- Advanced Engineering Materials, 2013, v. 15, n. 11, p. 1046, doi. 10.1002/adem.201300132
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- Article
A spill data aware memory assignment technique for improving power consumption of multimedia memory systems.
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- Multimedia Tools & Applications, 2019, v. 78, n. 5, p. 5463, doi. 10.1007/s11042-018-6783-x
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- Article
History table-based linear analysis method for DRAM-PCM hybrid memory system.
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- Journal of Supercomputing, 2021, v. 77, n. 11, p. 12924, doi. 10.1007/s11227-021-03786-5
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- Article
On the computational power of WECPAR.
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- Journal of Supercomputing, 2015, v. 71, n. 1, p. 28, doi. 10.1007/s11227-014-1275-x
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- Article
Properties of Ti-Sb-Te doped with SbSe alloy for application in nonvolatile phase change memory.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 923, doi. 10.1007/s10854-016-5608-9
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- Publication type:
- Article
High speed and low power consumption of superlattice-like Ge/SbSe thin films for phase change memory application.
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- Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2183, doi. 10.1007/s10854-015-4008-x
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- Article
Improvement of the thermal stability and power consumption of SbSe through nitrogen doping.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9700, doi. 10.1007/s10854-015-3637-4
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- Article
CrSbTe materials for phase change memory with high speed and good thermal stability performance.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 4138, doi. 10.1007/s10854-015-2958-7
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- Article
A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation.
- Published in:
- Scientific Reports, 2015, p. 11150, doi. 10.1038/srep11150
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- Publication type:
- Article
Mirror-symmetric Magneto-optical Kerr Rotation using Visible Light in [(GeTe)<sub>2</sub>(Sb<sub>2</sub>Te<sub>3</sub>)<sub>1</sub>]<sub>n</sub> Topological Superlattices.
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- Scientific Reports, 2014, p. 1, doi. 10.1038/srep05727
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- Publication type:
- Article
Encoding multistate charge order and chirality in endotaxial heterostructures.
- Published in:
- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-41780-y
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- Publication type:
- Article
In-memory photonic dot-product engine with electrically programmable weight banks.
- Published in:
- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-38473-x
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- Article
Author Index Volume 29 (2020).
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- Journal of Circuits, Systems & Computers, 2020, v. 29, n. 16, p. N.PAG, doi. 10.1142/S0218126620990017
- Publication type:
- Article
Enhancing the Lifetime of a Phase Change Memory with Bit-Flip Reversal.
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- Journal of Circuits, Systems & Computers, 2020, v. 29, n. 14, p. N.PAG, doi. 10.1142/S0218126620502199
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- Article
CWC: A Companion Write Cache for Energy-Aware Multi-Level Spin-Transfer Torque RAM Cache Design.
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- Journal of Circuits, Systems & Computers, 2015, v. 24, n. 6, p. -1, doi. 10.1142/S0218126615500796
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- Article
Resource Allocation Using Phase Change Hyper Switching Algorithm in the Cloud Environment.
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- Intelligent Automation & Soft Computing, 2022, v. 34, n. 3, p. 1839, doi. 10.32604/iasc.2022.026354
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- Article
Memory with a spin.
- Published in:
- Nature Nanotechnology, 2015, v. 10, n. 3, p. 185, doi. 10.1038/nnano.2015.50
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- Article
Accelerating the development of phase‐change random access memory with in‐fab plasma profiling time‐of‐flight mass spectrometry.
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- Surface & Interface Analysis: SIA, 2020, v. 52, n. 12, p. 895, doi. 10.1002/sia.6823
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- Article
Insights into the Heterogeneous Nuclei of an Ultrafast‐Crystallizing Glassy Solid.
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- Advanced Functional Materials, 2024, v. 34, n. 18, p. 1, doi. 10.1002/adfm.202314565
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- Article
Neural Architecture Search with In‐Memory Multiply–Accumulate and In‐Memory Rank Based on Coating Layer Optimized C‐Doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Memory (Adv. Funct. Mater. 15/2024).
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- Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202300458
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- Article
Materials for Memristors.
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- Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202314512
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- Article
Two‐Dimensional Memtransistors for Non‐Von Neumann Computing: Progress and Challenges.
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- Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202308129
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- Article
Stopping Voltage‐Dependent PCM and RRAM‐Based Neuromorphic Characteristics of Germanium Telluride.
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- Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202214615
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- Publication type:
- Article
Neural Architecture Search with In‐Memory Multiply–Accumulate and In‐Memory Rank Based on Coating Layer Optimized C‐Doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Memory.
- Published in:
- Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202300458
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- Article
Tailoring Mid‐Gap States of Chalcogenide Glass by Pressure‐Induced Hypervalent Bonding Towards the Design of Electrical Switching Materials.
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- Advanced Functional Materials, 2023, v. 33, n. 45, p. 1, doi. 10.1002/adfm.202304926
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- Article
Set/Reset Bilaterally Controllable Resistance Switching Ga‐doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Long‐Term Electronic Synapses for Neuromorphic Computing.
- Published in:
- Advanced Functional Materials, 2023, v. 33, n. 19, p. 1, doi. 10.1002/adfm.202213296
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- Article
Improvement of the thermal efficiency of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>-based device by ultrathin carbon nanolayers.
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- Journal of Materials Science: Materials in Electronics, 2024, v. 35, n. 2, p. 1, doi. 10.1007/s10854-023-11901-w
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- Article
Robust thermal stability in DRAM-like Sb<sub>2</sub>Te-based phase change memory by Hafnium modified.
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- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 13, p. 10423, doi. 10.1007/s10854-022-08029-8
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- Article
Investigation of Ru-doped Sb<sub>2</sub>Te alloy for high-speed and good thermal stability phase change memory applications.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 15, p. 20679, doi. 10.1007/s10854-021-06581-3
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- Article
Effect of Mg35Sb65 interlayer on the thermal stability and scaling of Ge2Sb2Te5 phase change thin film.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 5, p. 6408, doi. 10.1007/s10854-021-05358-y
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- Article
Study on the crystallization of Mg35Sb65/Sn15Sb85 superlattice-like films for phase change memory application.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 15, p. 12476, doi. 10.1007/s10854-020-03794-w
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- Article
Thermally stable tungsten and titanium doped antimony tellurium films for phase change memory application.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 13, p. 10912, doi. 10.1007/s10854-020-03642-x
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- Article
Investigation on thermal stability of vanadium-doped Sb2Te phase change material.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5879, doi. 10.1007/s10854-019-02726-7
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- Publication type:
- Article
Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5833, doi. 10.1007/s10854-019-02605-1
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- Article
Insulator–metal transition and ultrafast crystallization of Ga<sub>40</sub>Sb<sub>60</sub>/Sn<sub>15</sub>Sb<sub>85</sub> multiple interfacial nanocomposite films.
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- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 21, p. 19302, doi. 10.1007/s10854-019-02290-0
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- Publication type:
- Article
SbSe/ZnSb stacked thin films with multi-level phase transition for high density phase change memory applications.
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- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 16, p. 15024, doi. 10.1007/s10854-019-01875-z
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- Publication type:
- Article
Improvement of thermal stability of antimony film by cerium addition for phase change memory application.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 19, p. 17003, doi. 10.1007/s10854-018-9796-3
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- Article
Investigation of Sb<sub>65</sub>Se<sub>35</sub>/Sb multilayer thin films for high speed and high thermal stability application in phase change memory.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 19, p. 16172, doi. 10.1007/s10854-018-9706-8
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- Article
Improving the thermal stability and phase change speed in SbSe films through Er doping.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 23, p. 17719, doi. 10.1007/s10854-017-7710-z
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- Article
Chalcogenide van der Waals superlattices: a case example of interfacial phase-change memory.
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- Pure & Applied Chemistry, 2019, v. 91, n. 11, p. 1777, doi. 10.1515/pac-2019-0105
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- Article
Insulator Metal Transition-Based Selector in Crossbar Memory Arrays.
- Published in:
- Electronic Materials, 2024, v. 5, n. 1, p. 17, doi. 10.3390/electronicmat5010002
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- Article
A Survey of Soft-Error Mitigation Techniques for Non-Volatile Memories.
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- Computers (2073-431X), 2017, v. 6, n. 1, p. 8, doi. 10.3390/computers6010008
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- Article
Investigation of the Crystallization Kinetics in Ge-Sb-Te-Bi Thin Films for Phase Change Memory Application.
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- 2016
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- Publication type:
- Conference Paper
Bond-Selective Excitation and Following Displacement of Ge Atoms in GeTe/Sb<sub>2</sub>Te<sub>3</sub> Superlattice.
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- Acta Physica Polonica: A, 2012, v. 121, n. 2, p. 336, doi. 10.12693/APhysPolA.121.336
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- Article
Density measurement of solid and molten Sb2Te3 chalcogenide alloy by sessile drop method.
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- High Temperatures - High Pressures, 2017, v. 46, n. 3, p. 219
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- Article
STRUCTURAL INVESTIGATION OF TELLURIUM BASED THIN FILMS.
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- Journal of Chemical Technology & Metallurgy, 2018, v. 53, n. 4, p. 749
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- Article
Write-Combined Logging: An Optimized Logging for Consistency in NVRAM.
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- Scientific Programming, 2015, p. 1, doi. 10.1155/2015/398369
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- Publication type:
- Article
Influence of yttrium element on the crystallization performance of ZnSb alloy for phase change memory application.
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- European Physical Journal - Applied Physics, 2023, v. 98, n. 1, p. 1, doi. 10.1051/epjap/2023230054
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- Publication type:
- Article
Chromium doped GeTe for low-power-consumption phase change memory.
- Published in:
- European Physical Journal - Applied Physics, 2020, v. 92, n. 3, p. 1, doi. 10.1051/epjap/2020200275
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- Article
Temporal correlation detection using computational phase-change memory.
- Published in:
- Nature Communications, 2017, v. 8, n. 1, p. 1, doi. 10.1038/s41467-017-01481-9
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- Publication type:
- Article