Works matching DE "PHASE change memory"

Results: 273

Set/Reset Bilaterally Controllable Resistance Switching Ga‐doped Ge2Sb2Te5 Long‐Term Electronic Synapses for Neuromorphic Computing.

Published in:

Advanced Functional Materials, 2023, v. 33, n. 19, p. 1, doi. 10.1002/adfm.202213296

By:

Wang, Qiang;
Luo, Ren;
Wang, Yankun;
Fang, Wencheng;
Jiang, Luyue;
Liu, Yangyang;
Wang, Ruobing;
Dai, Liyan;
Zhao, Jinyan;
Bi, Jinshun;
Liu, Zenghui;
Zhao, Libo;
Jiang, Zhuangde;
Song, Zhitang;
Schwarzkopf, Jutta;
Schroeder, Thomas;
Wu, Shengli;
Ye, Zuo‐Guang;
Ren, Wei;
Song, Sannian

Publication type:

Article

High‐Throughput Screening for Phase‐Change Memory Materials.

Published in:

Advanced Functional Materials, 2021, v. 31, n. 21, p. 1, doi. 10.1002/adfm.202009803

By:

Liu, Yu‐Ting;
Li, Xian‐Bin;
Zheng, Hui;
Chen, Nian‐Ke;
Wang, Xue‐Peng;
Zhang, Xu‐Lin;
Sun, Hong‐Bo;
Zhang, Shengbai

Publication type:

Article

Flexible Crossbar‐Structured Phase Change Memory Array via Mo‐Based Interfacial Physical Lift‐Off.

Published in:

Advanced Functional Materials, 2019, v. 29, n. 6, p. N.PAG, doi. 10.1002/adfm.201806338

By:

Kim, Do Hyun;
Lee, Han Eol;
You, Byoung Kuk;
Cho, Sung Beom;
Mishra, Rohan;
Kang, Il‐Suk;
Lee, Keon Jae

Publication type:

Article

Phase Change Memory: A Review on Electrical Behavior and Use in Analog In‐Memory‐Computing (A‐IMC) Applications.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 12, p. 1, doi. 10.1002/aelm.202400599

By:

Boniardi, Mattia;
Baldo, Matteo;
Allegra, Mario;
Redaelli, Andrea

Publication type:

Article

Memristive Materials, Devices, and Systems (MEMRISYS 2023).

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 12, p. 1, doi. 10.1002/aelm.202400850

By:

Ricciardi, Carlo;
Ielmini, Daniele;
Corinto, Fernando;
Spiga, Sabina

Publication type:

Article

Inkjet‐Printed Phase Change Memory Devices.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 11, p. 1, doi. 10.1002/aelm.202400203

By:

He, Hanglin;
Kumaar, Dhananjeya;
Portner, Kevin;
Zellweger, Till;
Schenk, Florian M.;
Wintersteller, Simon;
Vlnieska, Vitor;
Emboras, Alexandros;
Wood, Vanessa;
Yarema, Maksym

Publication type:

Article

Tuning Thermal Stability and Power Consumption of Sb2Te3 Phase Change Memory with Metallic Elements.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300890

By:

Shao, Mingyue;
Qiao, Yang;
Song, Sannian;
Ding, Xing;
Song, Zhitang;
Xue, Yuan

Publication type:

Article

Unlocking Innovations: Celebrating the First Year of Open Access in Advanced Electronic Materials.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300791

By:

Tomasello, Gaia;
Banerjee, Swagata;
Hazra, Soumyajit

Publication type:

Article

Air‐Stable Atomically Encapsulated Crystalline‐Crystalline Phase Transitions in In2Se3.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300457

By:

Ignacio, Nicholas D;
Fatheema, Jameela;
Jeon, Yu‐Rim;
Akinwande, Deji

Publication type:

Article

Optimization of Projected Phase Change Memory for Analog In‐Memory Computing Inference (Adv. Electron. Mater. 6/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202370030

By:

Li, Ning;
Mackin, Charles;
Chen, An;
Brew, Kevin;
Philip, Timothy;
Simon, Andrew;
Saraf, Iqbal;
Han, Jin‐Ping;
Sarwat, Syed Ghazi;
Burr, Geoffrey W.;
Rasch, Malte;
Sebastian, Abu;
Narayanan, Vijay;
Saulnier, Nicole

Publication type:

Article

Optimization of Projected Phase Change Memory for Analog In‐Memory Computing Inference.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201190

By:

Li, Ning;
Mackin, Charles;
Chen, An;
Brew, Kevin;
Philip, Timothy;
Simon, Andrew;
Saraf, Iqbal;
Han, Jin‐Ping;
Sarwat, Syed Ghazi;
Burr, Geoffrey W.;
Rasch, Malte;
Sebastian, Abu;
Narayanan, Vijay;
Saulnier, Nicole

Publication type:

Article

Introducing Spontaneously Phase‐Separated Heterogeneous Interfaces Enables Low Power Consumption and High Reliability for Phase Change Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200437

By:

Zeng, Yuntao;
Li, Han;
Zhu, Yunlai;
Cheng, Xiaomin;
Xu, Ming;
Tong, Hao;
Miao, Xiangshui

Publication type:

Article

Uncovering Phase Change Memory Energy Limits by Sub‐Nanosecond Probing of Power Dissipation Dynamics.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 8, p. 1, doi. 10.1002/aelm.202100217

By:

Stern, Keren;
Wainstein, Nicolás;
Keller, Yair;
Neumann, Christopher M.;
Pop, Eric;
Kvatinsky, Shahar;
Yalon, Eilam

Publication type:

Article

Phase Change Random Access Memory for Neuro‐Inspired Computing.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202001241

By:

Wang, Qiang;
Niu, Gang;
Ren, Wei;
Wang, Ruobing;
Chen, Xiaogang;
Li, Xi;
Ye, Zuo‐Guang;
Xie, Ya‐Hong;
Song, Sannian;
Song, Zhitang

Publication type:

Article

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100164

By:

Zhang, Liwei;
Mai, Xianliang;
Gu, Rongchuan;
Liu, Long;
Xiong, Changying;
Yang, Zhe;
Tong, Hao;
Cheng, Xiaomin;
Xu, Ming;
Zhou, Peng;
Miao, Xiangshui

Publication type:

Article

Functional Applications of Future Data Storage Devices.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001181

By:

Yang, Jia‐Qin;
Zhou, Ye;
Han, Su‐Ting

Publication type:

Article

Weight Programming in DNN Analog Hardware Accelerators in the Presence of NVM Variability.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201900026

By:

Mackin, Charles;
Tsai, Hsinyu;
Ambrogio, Stefano;
Narayanan, Pritish;
Chen, An;
Burr, Geoffrey W.

Publication type:

Article

Switchable Out‐of‐Plane Polarization in 2D LiAlTe2.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 5, p. N.PAG, doi. 10.1002/aelm.201900089

By:

Liu, Zhun;
Sun, Yuanhui;
Singh, David J.;
Zhang, Lijun

Publication type:

Article

Narrow Heater Bottom Electrode‐Based Phase Change Memory as a Bidirectional Artificial Synapse.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 9, p. 1, doi. 10.1002/aelm.201800223

By:

La Barbera, Selina;
Ly, Denys R. B.;
Navarro, Gabriele;
Castellani, Niccolò;
Cueto, Olga;
Bourgeois, Guillaume;
De Salvo, Barbara;
Nowak, Etienne;
Querlioz, Damien;
Vianello, Elisa

Publication type:

Article

Collective Structural Relaxation in Phase‐Change Memory Devices.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 9, p. 1, doi. 10.1002/aelm.201700627

By:

Le Gallo, Manuel;
Krebs, Daniel;
Zipoli, Federico;
Salinga, Martin;
Sebastian, Abu

Publication type:

Article

Partial-PreSET: Enhancing Lifetime of PCM-Based Main Memory with Fine-Grained SET Operations.

Published in:

International Journal of Parallel Programming, 2018, v. 46, n. 4, p. 736, doi. 10.1007/s10766-017-0527-9

By:

Shi, Yang;
Zhu, Yanmin;
Huang, Linpeng

Publication type:

Article

An Optimal Page-Level Power Management Strategy in PCM-DRAM Hybrid Memory.

Published in:

International Journal of Parallel Programming, 2017, v. 45, n. 1, p. 4, doi. 10.1007/s10766-015-0382-5

By:

Zhang, Jinbao;
Liao, Xiaofei;
Jin, Hai;
Liu, Dong;
Lin, Li;
Zhao, Kao

Publication type:

Article

A Survey of Soft-Error Mitigation Techniques for Non-Volatile Memories.

Published in:

Computers (2073-431X), 2017, v. 6, n. 1, p. 8, doi. 10.3390/computers6010008

By:

Mittal, Sparsh

Publication type:

Article

Smart coating in protective clothing for firefighters: An overview and recent improvements.

Published in:

Journal of Industrial Textiles, 2022, v. 51, p. 7428S, doi. 10.1177/15280837221101213

By:

Shakeriaski, Farshad;
Ghodrat, Maryam;
Rashidi, Maria;
Samali, Bijan

Publication type:

Article

Phase Change Memory Drift Compensation in Spiking Neural Networks Using a Non-Linear Current Scaling Strategy.

Published in:

Journal of Low Power Electronics & Applications, 2024, v. 14, n. 4, p. 50, doi. 10.3390/jlpea14040050

By:

Palhares, Joao Henrique Quintino;
Garg, Nikhil;
Beilliard, Yann;
Anghel, Lorena;
Alibart, Fabien;
Drouin, Dominique;
Galy, Philippe

Publication type:

Article

Decoding Algorithms and HW Strategies to Mitigate Uncertainties in a PCM-Based Analog Encoder for Compressed Sensing.

Published in:

Journal of Low Power Electronics & Applications, 2023, v. 13, n. 1, p. 17, doi. 10.3390/jlpea13010017

By:

Paolino, Carmine;
Antolini, Alessio;
Zavalloni, Francesco;
Lico, Andrea;
Franchi Scarselli, Eleonora;
Mangia, Mauro;
Marchioni, Alex;
Pareschi, Fabio;
Setti, Gianluca;
Rovatti, Riccardo;
Luigi Torres, Mattia;
Carissimi, Marcella;
Pasotti, Marco

Publication type:

Article

Comprehensive Study of Side-Channel Attack on Emerging Non-Volatile Memories †.

Published in:

Journal of Low Power Electronics & Applications, 2021, v. 11, n. 4, p. 38, doi. 10.3390/jlpea11040038

By:

Khan, Mohammad Nasim Imtiaz;
Bhasin, Shivam;
Liu, Bo;
Yuan, Alex;
Chattopadhyay, Anupam;
Ghosh, Swaroop

Publication type:

Article

In-memory photonic dot-product engine with electrically programmable weight banks.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-38473-x

By:

Zhou, Wen;
Dong, Bowei;
Farmakidis, Nikolaos;
Li, Xuan;
Youngblood, Nathan;
Huang, Kairan;
He, Yuhan;
David Wright, C.;
Pernice, Wolfram H. P.;
Bhaskaran, Harish

Publication type:

Article

Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202470024

By:

Daoudi, Oumaima;
Nolot, Emmanuel;
Dartois, Mélanie;
Tessaire, Magali;
Aussenac, François;
Bernier, Nicolas;
Gauthier, Nicolas;
Rochat, Névine;
Fillot, Frédéric;
Le, Van‐Hoan;
Renevier, Hubert;
Navarro, Gabriele

Publication type:

Article

Phase‐Change and Ovonic Materials (fifth edition).

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202400239

By:

Noé, Pierre;
Kooi, Bart J.;
Wuttig, Matthias

Publication type:

Article

Low RESET Current Mushroom‐Cell Phase‐Change Memory Using Fiber‐Textured Homostructure GeSbTe on Highly Oriented Seed Layer.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202300426

By:

Cohen, Guy M.;
Majumdar, Amlan;
Cheng, Cheng‐Wei;
Ray, Asit;
Piatek, Daniel;
Gignac, Lynne;
Lavoie, Christian;
Grun, Alexander;
Cheng, Huai‐Yu;
Liu, Zhi‐Lun;
Lung, Hsiang‐Lan;
Miyazoe, Hiroyuki;
Bruce, Robert L.;
BrightSky, Matthew

Publication type:

Article

Investigation of Phase Segregation Dynamics in Ge‐Rich GST Thin Films by In Situ X‐Ray Fluorescence Mapping.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202300408

By:

Fernandes, Thomas;
Texier, Michael;
Hans, Philipp;
Mocuta, Cristian;
Comby‐Dassonneville, Solène;
Navarro, Gabriele;
Jeannot, Simon;
Cornelius, Thomas W.;
Han, Madeleine;
Ruiz, Jaime Segura;
Rosenthal, Martin;
le Friec, Yannick;
Simola, Roberto;
Thomas, Olivier

Publication type:

Article

Investigating the Polarity Dependence of Multilevel Cell Operation in Conventional Mushroom Phase‐Change Memory Cells.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202300374

By:

Yadav, Aakash;
Lim, Dong-Hyeok;
Jeong, Hongsik

Publication type:

Article

Film Thicknesses Influence on the Interfacial Thermal Resistances within Ge‐Rich Ge2Sb2Te5/Ge2Sb2Te5 Multilayers.

Published in:

Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 12, p. 1, doi. 10.1002/pssr.202300119

By:

Chassain, Clément;
Kusiak, Andrzej;
Gaborieau, Cécile;
Anguy, Yannick;
Tran, Nguyet-Phuong;
Sabbione, Chiara;
Cyrille, Marie-Claire;
Battaglia, Jean-Luc

Publication type:

Article

Trade‐Off between Multilevel Characteristics and Power Consumption of High‐Aspect‐Ratio Phase‐Change Memory.

Published in:

Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 8, p. 1, doi. 10.1002/pssr.202200463

By:

Zhao, Ruizhe;
Tong, Hao;
Miao, Xiangshui

Publication type:

Article

Phase‐Change and Ovonic Materials (Fourth Edition).

Published in:

Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 8, p. 1, doi. 10.1002/pssr.202300129

By:

Noé, Pierre;
Kooi, Bart J.;
Wuttig, Matthias

Publication type:

Article

Atomistic Modeling of Charge‐Trapping Defects in Amorphous Ge‐Sb‐Te Phase‐Change Memory Materials.

Published in:

Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 8, p. 1, doi. 10.1002/pssr.202200496

By:

Konstantinou, Konstantinos;
Elliott, Stephen R.

Publication type:

Article

Trade‐Off between Multilevel Characteristics and Power Consumption of High‐Aspect‐Ratio Phase‐Change Memory.

Published in:

Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 8, p. 1, doi. 10.1002/pssr.202200463

By:

Zhao, Ruizhe;
Tong, Hao;
Miao, Xiangshui

Publication type:

Article

Advanced Metrics for Quantification of By‐Process Segregation beyond Ternary Systems.

Published in:

Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 8, p. 1, doi. 10.1002/pssr.202200458

By:

Petroni, Elisa;
Patelmo, Matteo;
Serafini, Andrea;
Codegoni, Davide;
Laurin, Luca;
Baldo, Matteo;
Redaelli, Andrea

Publication type:

Article

Sb2Te3/TiTe2‐Heterostructure‐Based Phase Change Memory for Fast Set Speed and Low Reset Energy.

Published in:

Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 8, p. 1, doi. 10.1002/pssr.202200451

By:

Park, Jaemin;
Sung, Hansang;
Son, Soomin;
Ju, Sucheol;
Lee, Heon

Publication type:

Article

Structure and Crystallization Kinetics of As‐Deposited Films of the GeTe Phase Change Compound from Atomistic Simulations.

Published in:

Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 8, p. 1, doi. 10.1002/pssr.202200433

By:

Perego, Simone;
Dragoni, Daniele;
Gabardi, Silvia;
Campi, Davide;
Bernasconi, Marco

Publication type:

Article

Modeling Reset, Set, and Read Operations in Nanoscale Ge2Sb2Te5 Phase‐Change Memory Devices Using Electric Field‐ and Temperature‐Dependent Material Properties.

Published in:

Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 8, p. 1, doi. 10.1002/pssr.202200419

By:

Kashem, Md Tashfiq Bin;
Scoggin, Jake;
Woods, Zachary;
Silva, Helena;
Gokirmak, Ali

Publication type:

Article

Ultrafast Threshold Switching Dynamics in Phase‐Change Materials.

Published in:

Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 9, p. 1, doi. 10.1002/pssr.202200101

By:

Saxena, Nishant;
Manivannan, Anbarasu

Publication type:

Article

Innovative Nanocomposites for Low Power Phase‐Change Memory: GeTe/C Multilayers.

Published in:

Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 9, p. 1, doi. 10.1002/pssr.202200054

By:

Térébénec, Damien;
Bernier, Nicolas;
Castellani, Niccolo;
Bernard, Mathieu;
Jager, Jean-Baptiste;
Tomelleri, Martina;
Paterson, Jessy;
Cyrille, Marie-Claire;
Tran, Nguyet-Phuong;
Giordano, Valentina M.;
Hippert, Françoise;
Noé, Pierre

Publication type:

Article

Electrical Conduction Mechanism of β‐MnTe Thin Film with Wurtzite‐Type Structure Using Radiofrequency Magnetron Sputtering.

Published in:

Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 9, p. 1, doi. 10.1002/pssr.202100641

By:

Kim, Mihyeon;
Mori, Shunsuke;
Shuang, Yi;
Hatayama, Shogo;
Ando, Daisuke;
Sutou, Yuji

Publication type:

Article

Layer‐Dependent Effects of Interfacial Phase‐Change Memory for an Artificial Synapse.

Published in:

Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 9, p. 1, doi. 10.1002/pssr.202100616

By:

Kang, Shin-young;
Jin, Soo-min;
Lee, Ju-young;
Woo, Dae-seong;
Shim, Tae-hun;
Nam, In-ho;
Park, Jea-gun;
Sutou, Yuji;
Song, Yun-heub

Publication type:

Article

An In Situ Synchrotron X‐Ray Diffraction Study on the Influence of Hydrogen on the Crystallization of Ge‐Rich Ge2Sb2Te5.

Published in:

Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 9, p. 1, doi. 10.1002/pssr.202100658

By:

Hans, Philipp;
Mocuta, Cristian;
Richard, Marie-Ingrid;
Benoit, Daniel;
Boivin, Philippe;
Le-Friec, Yannick;
Simola, Roberto;
Thomas, Olivier

Publication type:

Article

Artificial Biphasic Synapses Based on Nonvolatile Phase‐Change Photonic Memory Cells.

Published in:

Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 9, p. 1, doi. 10.1002/pssr.202100487

By:

Zhou, Wen;
Farmakidis, Nikolaos;
Li, Xuan;
Tan, James;
Aggarwal, Samarth;
Feldmann, Johannes;
Brückerhoff-Plückelmann, Frank;
David Wright, C.;
Pernice, Wolfram H. P.;
Bhaskaran, Harish

Publication type:

Article

First‐Principles Calculation of Transport and Thermoelectric Coefficients in Liquid Ge2Sb2Te5.

Published in:

Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 9, p. 1, doi. 10.1002/pssr.202100470

By:

Baratella, Dario;
Dragoni, Daniele;
Bernasconi, Marco

Publication type:

Article

High‐Stability and Low‐Noise Multilevel Switching in In3SbTe2 Material for Phase Change Photonic Memory Applications.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 3, p. 1, doi. 10.1002/pssr.202000354

By:

Arjunan, Mozhikunnam Sreekrishnan;
Saxena, Nishant;
Mondal, Anirban;
Dixit, Tejendra;
Adarsh, Kumaran Nair Valsala Devi;
Manivannan, Anbarasu

Publication type:

Article