Highly Sensitive and Selective Hydrogen Gas Sensor Using the Mesoporous SnO<sup>2</sup> Modified Layers.
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- Sensors (14248220), 2017, v. 17, n. 10, p. 2351, doi. 10.3390/s17102351
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- Article
Works matching DE "PERFORMANCE of metal oxide semiconductors"
Results: 3
1
2
A Novel SRAM Cell Design with a Body-Bias Controller Circuit for Low Leakage, High Speed and Improved Stability.
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- Wireless Personal Communications, 2017, v. 94, n. 4, p. 3513, doi. 10.1007/s11277-016-3788-5
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- Article
3
Ultralow-Temperature Sol-Gel Route to Metal Oxide Semiconductors for Soft Platforms.
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- Advanced Materials Interfaces, 2016, v. 3, n. 20, p. n/a, doi. 10.1002/admi.201600664
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