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Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO<sub>2</sub>/SiO<sub>2</sub>/4H‐SiC Metal‐Oxide Semiconductor Structures.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 13, p. 1, doi. 10.1002/pssa.201700882
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- Article
Effects of Gate-Length Scaling on Microwave MOSFET Performance.
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- Electronics (2079-9292), 2017, v. 6, n. 3, p. 62, doi. 10.3390/electronics6030062
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- Article
Experimental Comparison of High-Speed Gate Driver Design for 1.2-kV/120-A Si IGBT and SiC MOSFET Modules.
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- IET Power Electronics (Wiley-Blackwell), 2017, v. 10, n. 9, p. 979, doi. 10.1049/iet-pel.2016.0668
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- Article
Comparative Study Between Two Novel BJT-DVCC and CMOS-DVCC.
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- Journal of Circuits, Systems & Computers, 2017, v. 26, n. 5, p. -1, doi. 10.1142/S0218126617500748
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- Article
استعمال تقنية تجويد الخوارزمية الوراثية متعددة الأهداف لتصميم المقاحل الثنائية البوابات والعالية الكفاءة في المجال النانومتري
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- Journal of King Abdulaziz University: Engineering Sciences, 2015, v. 26, n. 1, p. 97, doi. 10.4197/Eng.26-1.6
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- Article
Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology.
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- Journal of Nanomaterials, 2015, v. 2015, p. 1, doi. 10.1155/2015/726175
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- Article
Effect of guard-ring on the DC and high-frequency performance of deep-submicrometer metal oxide semiconductor field effect transistor.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2014, v. 24, n. 2, p. 259, doi. 10.1002/mmce.20757
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- Article
Improvements in pulsed current sharing in driving parallel MOSFETs.
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- Electronics & Communications in Japan, 2013, v. 96, n. 3, p. 1, doi. 10.1002/ecj.11471
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- Article