Synthesis of ZrO 2 nanoparticle and design of HEMT devices.
- Published in:
- Integrated Ferroelectrics, 2016, v. 176, n. 1, p. 132, doi. 10.1080/10584587.2016.1250184
- By:
- Publication type:
- Article
Works matching DE "PERFORMANCE of high electron mobility transistors"
Results: 5
1
2
High-speed FP GaN HEMT with f<sub>T</sub>/f<sub>MAX</sub> of 95/200 GHz.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 10, p. 657, doi. 10.1049/el.2018.0417
- By:
- Publication type:
- Article
3
GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 19, p. 1532, doi. 10.1049/el.2015.1684
- By:
- Publication type:
- Article
4
Implementation of mmWave AlGaN/GaN HEMTs and Power Amplifier MMICs.
- Published in:
- Microwave Journal, 2015, v. 58, n. 2, p. 94
- By:
- Publication type:
- Article
5
Al<sub>2</sub>O<sub>3</sub> Insertion Layer for Improved PEALD SiO<sub>2</sub>/(Al)GaN Interfaces.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 5, p. 1, doi. 10.1002/pssa.201700498
- By:
- Publication type:
- Article