Works matching DE "PERFORMANCE of high electron mobility transistors"
Results: 4
High-speed FP GaN HEMT with f<sub>T</sub>/f<sub>MAX</sub> of 95/200 GHz.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 10, p. 657, doi. 10.1049/el.2018.0417
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Implementation of mmWave AlGaN/GaN HEMTs and Power Amplifier MMICs.
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- Microwave Journal, 2015, v. 58, n. 2, p. 94
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- Article
GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 19, p. 1532, doi. 10.1049/el.2015.1684
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- Article
Al<sub>2</sub>O<sub>3</sub> Insertion Layer for Improved PEALD SiO<sub>2</sub>/(Al)GaN Interfaces.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 5, p. 1, doi. 10.1002/pssa.201700498
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- Article