Works matching DE "P-N-junction diodes"
Results: 17
Transparent SnO-SnO<sub>2</sub> p-n Junction Diodes for Electronic and Sensing Applications.
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- Advanced Materials Interfaces, 2015, v. 2, n. 18, p. n/a, doi. 10.1002/admi.201500374
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'In-field' cell temperature evaluation in solar modules through time-dependent open circuit voltage measurements.
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- Progress in Photovoltaics, 2016, v. 24, n. 2, p. 211, doi. 10.1002/pip.2662
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The effect of the electron-phonon interaction on reverse currents of GaAs-based p-n junctions.
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- Semiconductors, 2016, v. 50, n. 13, p. 1734, doi. 10.1134/S1063782616130145
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Effect of impurity impact ionization on the dynamic characteristics of 4 H-SiC p- n-- n diodes at low temperatures (77 K).
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- Semiconductors, 2015, v. 49, n. 7, p. 976, doi. 10.1134/S1063782615070118
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n and p type character of single molecule diodes.
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- Scientific Reports, 2015, p. 8350, doi. 10.1038/srep08350
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Calculation of the ultimate efficiency of p-n-junction solar cells taking into account the semiconductor absorption coefficient.
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- Przegląd Elektrotechniczny, 2016, v. 92, n. 8, p. 85, doi. 10.15199/48.2016.08.23
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Evaluation of optical amplification properties using dressed photons in a silicon waveguide.
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- Applied Physics A: Materials Science & Processing, 2015, v. 121, n. 4, p. 1377, doi. 10.1007/s00339-015-9419-2
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Bulk crystal SiC blue LED with p-n homojunction structure fabricated by dressed-photon-phonon-assisted annealing.
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- Applied Physics A: Materials Science & Processing, 2014, v. 115, n. 1, p. 127, doi. 10.1007/s00339-013-7930-x
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New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 195, doi. 10.15407/spqeo20.02.195
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Low doses effect in GaP light-emitting diodes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 2, p. 183, doi. 10.15407/spqeo19.02.183
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Restricted-Access Al-Mediated Material Transport in Al Contacting of PureGaB Ge-on-Si p n Diodes.
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- Journal of Electronic Materials, 2015, v. 44, n. 12, p. 4676, doi. 10.1007/s11664-015-4008-x
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ВРЕМЯ ЖИЗНИ ДЫРОК В КРЕМНИЕВЫХ ДИОДАХ НА ОСНОВЕ N
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- German International Journal of Modern Science / Deutsche Internationale Zeitschrift für Zeitgenössische Wissenschaft, 2024, n. 72, p. 68, doi. 10.5281/zenodo.10532678
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Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted p- n photodiode structure formation.
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- Technical Physics Letters, 2014, v. 40, n. 8, p. 708, doi. 10.1134/S1063785014080239
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Subnanosecond avalanche switching in high-voltage silicon diodes with abrupt and graded p- n junctions.
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- Technical Physics Letters, 2014, v. 40, n. 4, p. 357, doi. 10.1134/S1063785014040166
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Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600837
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Radiation polarization of silicon carbide p-n-structures, operating in electrical breakdown regime.
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- European Physical Journal - Applied Physics, 2015, v. 70, n. 2, p. 20103-p1, doi. 10.1051/epjap/2015140205
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Synthesis of bismuth sulfide nanostructures by using bismuth(III) monosalicylate precursor and fabrication of bismuth sulfide based p-n junction solar cells.
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- Asia-Pacific Journal of Chemical Engineering, 2014, v. 9, n. 1, p. 16, doi. 10.1002/apj.1741
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