Works matching DE "P-N-junction diodes"

Results: 17

The effect of the electron-phonon interaction on reverse currents of GaAs-based p-n junctions.

Published in:

Semiconductors, 2016, v. 50, n. 13, p. 1734, doi. 10.1134/S1063782616130145

By:

Zhukov, A.

Publication type:

Article

Effect of impurity impact ionization on the dynamic characteristics of 4 H-SiC p- n-- n diodes at low temperatures (77 K).

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 976, doi. 10.1134/S1063782615070118

By:

Ivanov, P.;
Potapov, A.;
Samsonova, T.

Publication type:

Article

Restricted-Access Al-Mediated Material Transport in Al Contacting of PureGaB Ge-on-Si p n Diodes.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 12, p. 4676, doi. 10.1007/s11664-015-4008-x

By:

Sammak, Amir;
Qi, Lin;
Nanver, Lis

Publication type:

Article

Evaluation of optical amplification properties using dressed photons in a silicon waveguide.

Published in:

Applied Physics A: Materials Science & Processing, 2015, v. 121, n. 4, p. 1377, doi. 10.1007/s00339-015-9419-2

By:

Tanaka, H.;
Kawazoe, T.;
Ohtsu, M.;
Akahane, K.;
Yamamoto, N.

Publication type:

Article

Bulk crystal SiC blue LED with p-n homojunction structure fabricated by dressed-photon-phonon-assisted annealing.

Published in:

Applied Physics A: Materials Science & Processing, 2014, v. 115, n. 1, p. 127, doi. 10.1007/s00339-013-7930-x

By:

Kawazoe, Tadashi;
Ohtsu, Motoichi

Publication type:

Article

n and p type character of single molecule diodes.

Published in:

Scientific Reports, 2015, p. 8350, doi. 10.1038/srep08350

By:

Zoldan, Vinícius Claudio;
Faccio, Ricardo;
Pasa, André Avelino

Publication type:

Article

ВРЕМЯ ЖИЗНИ ДЫРОК В КРЕМНИЕВЫХ ДИОДАХ НА ОСНОВЕ N

Published in:

German International Journal of Modern Science / Deutsche Internationale Zeitschrift für Zeitgenössische Wissenschaft, 2024, n. 72, p. 68, doi. 10.5281/zenodo.10532678

By:

Адем гызы, Кардашбекова Наиля;
гызы, Султанова Айгюн Хаджи;
гызы, Гулиева Адиля Адем

Publication type:

Article

Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted p- n photodiode structure formation.

Published in:

Technical Physics Letters, 2014, v. 40, n. 8, p. 708, doi. 10.1134/S1063785014080239

By:

Mynbaev, K.;
Bazhenov, N.;
Yakushev, M.;
Marin, D.;
Varavin, V.;
Sidorov, Yu.;
Dvoretsky, S.

Publication type:

Article

Subnanosecond avalanche switching in high-voltage silicon diodes with abrupt and graded p- n junctions.

Published in:

Technical Physics Letters, 2014, v. 40, n. 4, p. 357, doi. 10.1134/S1063785014040166

By:

Brylevskii, V.;
Smirnova, I.;
Rodin, P.;
Grekhov, I.

Publication type:

Article

Radiation polarization of silicon carbide p-n-structures, operating in electrical breakdown regime.

Published in:

European Physical Journal - Applied Physics, 2015, v. 70, n. 2, p. 20103-p1, doi. 10.1051/epjap/2015140205

By:

Genkin, Aleksey M.;
Genkina, Vera K.;
Zubkova, Svetlana M.

Publication type:

Article

Synthesis of bismuth sulfide nanostructures by using bismuth(III) monosalicylate precursor and fabrication of bismuth sulfide based p-n junction solar cells.

Published in:

Asia-Pacific Journal of Chemical Engineering, 2014, v. 9, n. 1, p. 16, doi. 10.1002/apj.1741

By:

Salavati‐Niasari, Masoud;
Behfard, Zeynab;
Amiri, Omid

Publication type:

Article

'In-field' cell temperature evaluation in solar modules through time-dependent open circuit voltage measurements.

Published in:

Progress in Photovoltaics, 2016, v. 24, n. 2, p. 211, doi. 10.1002/pip.2662

By:

Rumyantsev, Valery D.;
Chekalin, Alexander V.;
Davidyuk, Nikolay Yu.;
Sadchikov, Nikolay A.;
Luque, Antonio

Publication type:

Article

New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 195, doi. 10.15407/spqeo20.02.195

By:

Borblik, V. L.;
Shwarts, Yu. M.;
Shwarts, M. M.;
Aleinikov, A. B.

Publication type:

Article

Low doses effect in GaP light-emitting diodes.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 2, p. 183, doi. 10.15407/spqeo19.02.183

By:

Hontaruk, O. M.;
Konoreva, O. V.;
Malyi, Ye. V.;
Petrenko, I. V.;
Pinkovska, M. B.;
Radkevych, O. I.;
Tartachnyk, V. P.

Publication type:

Article

Calculation of the ultimate efficiency of p-n-junction solar cells taking into account the semiconductor absorption coefficient.

Published in:

Przegląd Elektrotechniczny, 2016, v. 92, n. 8, p. 85, doi. 10.15199/48.2016.08.23

By:

TIVANOV, Mikhail;
MOSKALEV, Alexander;
KAPUTSKAYA, Iryna;
ŻUKOWSKI, Paweł

Publication type:

Article

Transparent SnO-SnO<sub>2</sub> p-n Junction Diodes for Electronic and Sensing Applications.

Published in:

Advanced Materials Interfaces, 2015, v. 2, n. 18, p. n/a, doi. 10.1002/admi.201500374

By:

Wang, Zhenwei;
Nayak, Pradipta K.;
Albar, Arwa;
Wei, Nini;
Schwingenschlögl, Udo;
Alshareef, Husam N.

Publication type:

Article

Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600837

By:

Usami, Shigeyoshi;
Miyagoshi, Ryosuke;
Tanaka, Atsushi;
Nagamatsu, Kentaro;
Kushimoto, Maki;
Deki, Manato;
Nitta, Shugo;
Honda, Yoshio;
Amano, Hiroshi

Publication type:

Article