Works matching DE "P-N junctions (Semiconductors)"
Results: 160
Static Organic p‐n Junctions in Photoelectrodes for Solar Ammonia Production with 86 % Internal Quantum Efficiency.
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- Angewandte Chemie, 2025, v. 137, n. 3, p. 1, doi. 10.1002/ange.202415729
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Ladungsträger-Tiefenprofilierung an ultra-flachen pn-Übergängen.
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- Vakuum in Forschung und Praxis, 2013, v. 25, n. 3, p. 26, doi. 10.1002/vipr.201300520
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Ionic liquid-assisted synthesis and improved photocatalytic activity of p-n junction g-CN/BiOCl.
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- Journal of Materials Science, 2016, v. 51, n. 10, p. 4769, doi. 10.1007/s10853-016-9746-5
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MODIFICATION OF VAN DER ZIEL RELATION FOR SPECTRUM OF NOISE IN p-n JUNCTION.
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- Fluctuation & Noise Letters, 2012, v. 11, n. 2, p. 1250015-1, doi. 10.1142/S0219477512500150
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Avalanche breakdown in multicrystalline solar cells due to preferred phosphorous diffusion at extended defects.
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- Progress in Photovoltaics, 2013, v. 21, n. 7, p. 1444, doi. 10.1002/pip.2220
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- Article
InGaAs nBn SWIR detector design with lattice-matched InAlGaAs barrier.
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- Turkish Journal of Electrical Engineering & Computer Sciences, 2019, v. 27, n. 1, p. 1, doi. 10.3906/elk-1802-197
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Effect of Annealing Time on the Power Conversion Efficiency of Silicon Nanowire Based Solar Cell Prepared by Wet Diffusion Technique.
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- Journal of Nano- & Electronic Physics, 2017, v. 9, n. 6, p. 1, doi. 10.21272/jnep.9(6).06025
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Development of Numerical Method for Optimizing Silicon Solar Cell Efficiency.
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- Journal of Nano- & Electronic Physics, 2017, v. 9, n. 4, p. 04019-1, doi. 10.21272/jnep.9(4).04019
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Effect the Technique of Light Trapping on the Performance of Simple Junction n-p Solar Cells Based on GaAs and Si.
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- Journal of Nano- & Electronic Physics, 2017, v. 9, n. 2, p. 02005-1, doi. 10.21272/jnep.9(2).02005
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The Asymmetry of the Distribution Density Volume Uncompensated Charge at the Metallurgical p-n Junction.
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- Journal of Nano- & Electronic Physics, 2012, v. 4, n. 3, p. 3026-1
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- Article
Internal Electric Field Profiling of 2D P-N Junctions of Semiconductor Devices by 4D STEM and Dual Lens Electron Holography.
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- Microscopy Today, 2022, v. 30, n. 1, p. 24, doi. 10.1017/S1551929521001577
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- Article
Modification of the CdTe-In Interface by Irradiation with Nanosecond Laser Pulses through the CdTe Crystal.
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- Journal of Laser Micro / Nanoengineering, 2015, v. 10, n. 3, p. 298, doi. 10.2961/jlmn.2015.03.0011
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Improvement of Junction Properties of ZnO Nanorod/GaN Heterojunction Using Selective Laser Processing.
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- Journal of Laser Micro / Nanoengineering, 2014, v. 9, n. 3, p. 209, doi. 10.2961/jlmn.2014.03.0005
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- Article
Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron.
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- Advances in Materials Science & Engineering, 2018, p. 1, doi. 10.1155/2018/8797031
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Kloosterman paths of prime powers moduli.
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- Commentarii Mathematici Helvetici, 2018, v. 93, n. 3, p. 493, doi. 10.4171/CMH/442
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Bounding the regularity of subschemes invariant under Pfaff fields on projective spaces.
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- Commentarii Mathematici Helvetici, 2011, v. 86, n. 4, p. 947, doi. 10.4171/CMH/244
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Eliminate the transmission feedthrough of thermal-piezoresistive I²-BAR MEMS resonators based on reverse-biased PN junction.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 9, p. 1232, doi. 10.1049/mnl.2017.0774
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- Article
Analysis of simulation of multiterminal electro-optic modulator based on p-n junction in reverse bias.
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- Optical Engineering, 2015, v. 54, n. 5, p. 1, doi. 10.1117/1.OE.54.5.057104
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- Article
Activated carbon fibers for toxic gas removal based on electrical investigation: Mechanistic study of p-type/n-type junction structures.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-50707-x
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Hydrodynamic modeling of hot-carrier effects in a PN junction solar cell.
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- Acta Mechanica, 2016, v. 227, n. 11, p. 3247, doi. 10.1007/s00707-015-1538-5
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Transmission electron microscope study of a threading dislocation with and its effect on leakage in a 4H–SiC MOSFET.
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- Philosophical Magazine Letters, 2013, v. 93, n. 8, p. 439, doi. 10.1080/09500839.2013.798047
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- Article
A New Method for Fitting Current-Voltage Curves of Planar Heterojunction Perovskite Solar Cells.
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- Nano-Micro Letters, 2018, v. 10, n. 1, p. 1, doi. 10.1007/s40820-017-0159-z
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Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals.
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- Nanoscale Research Letters, 2013, n. 6, p. 1, doi. 10.1186/1556-276X-8-264
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- Article
The New Equations of p-n Junction Carrier Injection Level.
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- Electronics & Electrical Engineering, 2013, v. 19, n. 2, p. 45, doi. 10.5755/j01.eee.19.2.3467
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Influence of Front and Back Contacts on Photovoltaic Performances of p-n Homojunction Si Solar Cell: Considering an Electron-Blocking Layer.
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- International Journal of Photoenergy, 2017, p. 1, doi. 10.1155/2017/7415851
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Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions.
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- International Journal of Photoenergy, 2016, p. 1, doi. 10.1155/2016/1815205
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- Article
Preparation of Improved p-n Junction NiO/TiO<sub>2</sub> Nanotubes for Solar-Energy-Driven Light Photocatalysis.
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- International Journal of Photoenergy, 2013, p. 1, doi. 10.1155/2013/659013
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Zhang et al. reply.
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- Nature, 2013, v. 501, n. 7468, p. E1, doi. 10.1038/nature12590
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Issue Information.
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- Progress in Photovoltaics, 2017, v. 25, n. 9, p. 753, doi. 10.1002/pip.2828
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- Article
Nanoscale insight into the p-n junction of alkali-incorporated Cu(In,Ga)Se<sub>2</sub> solar cells.
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- Progress in Photovoltaics, 2017, v. 25, n. 9, p. 764, doi. 10.1002/pip.2883
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- Article
Droop reduction in ZnO/GaN Hybrid Light Emitting Diodes.
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- Indian Journal of Pure & Applied Physics, 2021, v. 59, n. 4, p. 335
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- Article
LED BASED UNIVERSAL LIGHTING SYSTEM.
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- Annals of DAAAM & Proceedings, 2012, v. 23, n. 1, p. 0649
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Polarization-sensitive broadband photodetector using a black phosphorus vertical p-n junction.
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- Nature Nanotechnology, 2015, v. 10, n. 8, p. 707, doi. 10.1038/nnano.2015.112
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Atomically thin p-n junctions with van der Waals heterointerfaces.
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- Nature Nanotechnology, 2014, v. 9, n. 9, p. 676, doi. 10.1038/nnano.2014.150
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Solar-energy conversion and light emission in an atomic monolayer p-n diode.
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- Nature Nanotechnology, 2014, v. 9, n. 4, p. 257, doi. 10.1038/nnano.2014.14
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- Article
Comprehensive Pyro‐Phototronic Effect Enhanced Ultraviolet Detector with ZnO/Ag Schottky Junction.
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- Advanced Functional Materials, 2019, v. 29, n. 5, p. N.PAG, doi. 10.1002/adfm.201807111
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- Article
ZnO/CuCrO<sub>2</sub> Core–Shell Nanowire Heterostructures for Self‐Powered UV Photodetectors with Fast Response.
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- Advanced Functional Materials, 2018, v. 28, n. 43, p. N.PAG, doi. 10.1002/adfm.201803142
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- Article
Double Br sources fabrication and photocatalytic property of p-n junction BiOBr/ZnO composites for phenol removal.
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- Crystal Research & Technology, 2014, v. 49, n. 9, p. 721, doi. 10.1002/crat.201400076
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Application of a Capacitive Charge-Sharing Circuit for Reducing the Number of Readout Channels of Multichannel Semiconductor Detectors with p–n Junctions.
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- Instruments & Experimental Techniques, 2023, v. 66, n. 1, p. 36, doi. 10.1134/S0020441223010141
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Denoising of series electron holograms using tensor decomposition.
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- Microscopy, 2021, v. 70, n. 3, p. 255, doi. 10.1093/jmicro/dfaa057
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- Article
Graphene nanoribbon FETs for digital electronics: experiment and modeling.
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- International Journal of Circuit Theory & Applications, 2013, v. 41, n. 6, p. 603, doi. 10.1002/cta.1801
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- Article
First-principles investigation of bandgap tailoring in tetragonal Bi<sub>2</sub>FeCrO<sub>6</sub> by magnetic ordering and B-site-cation ordering.
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- Functional Materials Letters, 2020, v. 13, n. 1, p. N.PAG, doi. 10.1142/S1793604719500929
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- Article
PROCEDURE FOR THE STUDY OF ELECTRONIC DEVICES BY VIRTUAL INSTRUMENTATION.
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- Annals of the University of Petrosani Electrical Engineering, 2022, v. 24, p. 27
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- Article
Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy.
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- Semiconductors, 2018, v. 52, n. 16, p. 2128, doi. 10.1134/S1063782618160327
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On the Fabrication of Graphene p-n Junctions and Their Application for Detecting Terahertz Radiation.
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- Semiconductors, 2018, v. 52, n. 8, p. 1077, doi. 10.1134/S1063782618080225
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High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p-n junctions: I. Physics of the switching process.
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- Semiconductors, 2017, v. 51, n. 9, p. 1208, doi. 10.1134/S1063782617090123
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High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p-n junctions: II. Energy efficiency.
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- Semiconductors, 2017, v. 51, n. 9, p. 1214, doi. 10.1134/S1063782617090135
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Local thermoelectric effects in wide-gap semiconductors.
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- Semiconductors, 2017, v. 51, n. 7, p. 883, doi. 10.1134/S1063782617070296
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Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p-n junction.
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- Semiconductors, 2017, v. 51, n. 2, p. 189, doi. 10.1134/S1063782617020038
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Mechanism of microplasma turn-off upon the avalanche breakdown of silicon p-n structures.
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- Semiconductors, 2016, v. 50, n. 10, p. 1352, doi. 10.1134/S1063782616100171
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- Article