Works matching DE "OPTICAL properties of semiconductors"

Results: 174

Advanced research into the growth mechanism and optical properties of wurtzite ZnSe quantum dots.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3639, doi. 10.1007/s10854-014-2068-y

By:

Han, Donglai;
Feng, Bo;
Cao, Jian;
Gao, Ming;
Yang, Shuo;
Yang, Jinghai

Publication type:

Article

Magnetic, optical, and kinetic properties of HgCdGdSe crystals.

Published in:

Inorganic Materials, 2016, v. 52, n. 5, p. 447, doi. 10.1134/S0020168516050071

By:

Kovalyuk, T.;
Maistruk, E.;
Maryanchuk, P.

Publication type:

Article

Yuriĭ Andreevich Osip’yan (on the occasion of his 75th birthday).

Published in:: Crystallography Reports, 2006, v. 51, n. 3, p. 525, doi. 10.1134/S1063774506030254
Publication type:: Article

Novel diffusions of interstitial atoms in II-VI compounds zinc selenide.

Published in:

Modern Physics Letters B, 2015, v. 29, n. 11, p. 1, doi. 10.1142/S021798491550044X

By:

Chen, Li An;
Jiang, En Hai;
Zhu, Xing Feng;
Chen, Ling Fu

Publication type:

Article

First-Principles Study of Pressure Dependence of Optical Spectra of MnS.

Published in:

Journal of Superconductivity & Novel Magnetism, 2018, v. 31, n. 5, p. 1643, doi. 10.1007/s10948-017-4377-x

By:

Khaldi, Abdelghani;
Bouarissa, Nadir;
Tabourot, Laurent

Publication type:

Article

Investigation of segregation by quantitative transmission electron microscopy.

Published in:

Optica Applicata, 2006, v. 36, n. 2/3, p. 297

By:

Schowalter, Marco;
Rosenauer, Andreas;
Litvinov, Dimitri;
Gerthsen, Dagmar

Publication type:

Article

Drift of Electrons and Atoms in the Laser Radiation Field and Its Influence on the Optical Properties of Semiconductors.

Published in:

Radiophysics & Quantum Electronics, 2005, v. 48, n. 8, p. 599, doi. 10.1007/s11141-005-0104-8

By:

Krupa, N.;
Korostil', A.;
Skirta, Yu.

Publication type:

Article

Ammonothermal Synthesis and Optical Properties of Ternary Nitride Semiconductors Mg‐IV‐N2, Mn‐IV‐N2 and Li‐IV2‐N3 (IV=Si, Ge).

Published in:

Chemistry - A European Journal, 2018, v. 24, n. 7, p. 1686, doi. 10.1002/chem.201704973

By:

Häusler, Jonas;
Niklaus, Robin;
Minár, Ján;
Schnick, Wolfgang

Publication type:

Article

Effects of spontaneous emission excited state lifetime on the output performance of quantum well lasers.

Published in:

Optical & Quantum Electronics, 2017, v. 49, n. 6, p. 1, doi. 10.1007/s11082-017-1008-5

By:

Xia, Mingjun;
Ghafouri-Shiraz, H.

Publication type:

Article

Optical Emission Diagnosis of Boron Carbide Synthesized Using Natural Carbon Precursors.

Published in:

Optics & Spectroscopy, 2018, v. 125, n. 6, p. 928, doi. 10.1134/S0030400X18120251

By:

Saritha Devi, H. V.;
Swapna, M. S.;
Ambadas, G.;
Sankararaman, S.

Publication type:

Article

An experimental study of the luminosity of an MFC−MAES-based digital spectrograph.

Published in:

Optics & Spectroscopy, 2016, v. 120, n. 2, p. 335, doi. 10.1134/S0030400X16020077

By:

Drobyshev, A.;
Savinov, S.

Publication type:

Article

Optical properties of BiTeI semiconductor with a strong Rashba spin-orbit interaction.

Published in:

Optics & Spectroscopy, 2014, v. 117, n. 5, p. 764, doi. 10.1134/S0030400X14110125

By:

Makhnev, A.;
Nomerovannaya, L.;
Kuznetsova, T.;
Tereshchenko, O.;
Kokh, K.

Publication type:

Article

Intraband optical transitions in semiconductor quantum dots: Radiative electronic-excitation lifetime.

Published in:

Optics & Spectroscopy, 2011, v. 110, n. 5, p. 740, doi. 10.1134/S0030400X11050183

By:

Turkov, V.;
Kruchinin, S.;
Fedorov, A.

Publication type:

Article

Optical activity of dielectric superlattices with defects.

Published in:

Optics & Spectroscopy, 2011, v. 110, n. 5, p. 748, doi. 10.1134/S0030400X11050122

By:

Rumyantsev, V.;
Fedorov, S.;
Gumennik, K.

Publication type:

Article

Distribution of electron density of states in allowed bands and interband absorption in amorphous semiconductors.

Published in:

Optics & Spectroscopy, 2011, v. 110, n. 5, p. 762, doi. 10.1134/S0030400X11030271

By:

Zainobidinov, S.;
Ikramov, R.;
Zhalalov, R.;
Nuritdinova, M.

Publication type:

Article

Effects of nanostructure-covered femtosecond laser-induced periodic surface structures on optical absorptance of metals.

Published in:

Applied Physics A: Materials Science & Processing, 2007, v. 86, n. 2, p. 321, doi. 10.1007/s00339-006-3800-0

By:

Vorobyev, A. Y.;
Guo, Chunlei

Publication type:

Article

Intervalley scattering in GaAs: ab initio calculation of the effective parameters for Monte Carlo simulations.

Published in:

Applied Physics A: Materials Science & Processing, 2007, v. 86, n. 2, p. 301, doi. 10.1007/s00339-006-3786-7

By:

Sjakste, J.;
Tyuterev, V.;
Vast, N.

Publication type:

Article

Optical characterization of porous silicon films and multilayer filters.

Published in:

Applied Physics A: Materials Science & Processing, 2004, v. 79, n. 8, p. 1919, doi. 10.1007/s00339-004-2642-x

By:

Torres-Costa, V.;
Martín-Palma, R.J.;
Martinez-Duart, J.M.

Publication type:

Article

Application of SCM for the microcharacterization of semiconductor devices.

Published in:

Applied Physics A: Materials Science & Processing, 2003, v. 76, n. 6, p. 885, doi. 10.1007/s00339-002-1969-4

By:

Zimmermann, G.;
Born, A.;
Ebersberger, B.;
Boit, C.

Publication type:

Article

Low-dimensional systems: quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems.

Published in:

Advances in Physics, 1993, v. 42, n. 2, p. 173, doi. 10.1080/00018739300101484

By:

Yoffe, A.D.

Publication type:

Article

Linear and nonlinear optical properties of semiconductor quantum wells.

Published in:

Advances in Physics, 1989, v. 38, n. 2, p. 89, doi. 10.1080/00018738900101102

By:

Schmitt-Rink, S.;
Chemla, D.S.;
Miller, D.A.B.

Publication type:

Article

Experimental studies of the effects of atomic ordering in epitaxial GaInP alloys on their optical properties.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1111, doi. 10.1134/S1063782617090196

By:

Seredin, P.;
Goloshchapov, D.;
Lenshin, A.;
Lukin, A.;
Khudyakov, Yu.;
Arsentyev, I.;
Prutskij, Tatiana

Publication type:

Article

New mechanism of semiconductor polarization at the interface with an organic insulator.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 193, doi. 10.1134/S1063782617020245

By:

Yafyasov, A.;
Bogevolnov, V.;
Ryumtsev, E.;
Kovshik, A.;
Mikhailovski, V.

Publication type:

Article

Quantitative analysis of optical and recombination losses in Cu(In,Ga)Se thin-film solar cells.

Published in:

Semiconductors, 2016, v. 50, n. 4, p. 508, doi. 10.1134/S1063782616040138

By:

Kosyachenko, L.;
Lytvynenko, V.;
Maslyanchuk, O.

Publication type:

Article

Optical and structural properties of CuZnSnS thin films obtained by pulsed laser deposition in a HS atmosphere with subsequent annealing in a N atmosphere.

Published in:

Semiconductors, 2016, v. 50, n. 4, p. 549, doi. 10.1134/S1063782616040229

By:

Teterina, G.;
Nevolin, V.;
Sipaylo, I.;
Medvedeva, S.;
Teterin, P.

Publication type:

Article

Plasmon resonance in new AsSb-AlGaAs metal-semiconductor metamaterials.

Published in:

Semiconductors, 2015, v. 49, n. 12, p. 1587, doi. 10.1134/S1063782615120234

By:

Ushanov, V.;
Chaldyshev, V.;
Bert, N.;
Nevedomsky, V.;
Il'inskaya, N.;
Lebedeva, N.;
Preobrazhenskii, V.;
Putyato, M.;
Semyagin, B.

Publication type:

Article

Synthesis of thin p-type rutile films.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 251, doi. 10.1134/S1063782614020110

By:

Ievlev, V.;
Kushev, S.;
Ovchinnikov, O.;
Sumez, M.;
Latyshev, A.;
Bezryadin, M.;
Leonova, L.;
Kannykin, S.;
Vozgorkov, A.;
Smirnov, M.

Publication type:

Article

Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1341, doi. 10.1134/S1063782612100065

By:

Izhnin, I.;
Mynbaev, K.;
Yakushev, M.;
Izhnin, A.;
Fitsych, E.;
Bazhenov, N.;
Shilyaev, A.;
Savitskyy, H.;
Jakiela, R.;
Sorochkin, A.;
Varavin, V.;
Dvoretsky, S.

Publication type:

Article

Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1291, doi. 10.1134/S1063782612100089

By:

Lukin, P.;
Chaldyshev, V.;
Preobrazhenskii, V.;
Putyato, M.;
Semyagin, B.

Publication type:

Article

Failure analysis of electrical-thermal-optical characteristics of LEDs based on AlGaInP and InGaN/GaN.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1310, doi. 10.1134/S1063782612100041

By:

Chen, Huanting;
Keppens, Arno;
Hanselaer, Peter;
Lu, Yijun;
Gao, Yulin;
Zhuang, Rongrong;
Chen, Zhong

Publication type:

Article

Optical properties of nanostructured lead sulfide films with a D0 cubic structure.

Published in:

Semiconductors, 2011, v. 45, n. 12, p. 1559, doi. 10.1134/S1063782611120116

By:

Sadovnikov, S.;
Kozhevnikova, N.;
Gusev, A.

Publication type:

Article

Optical properties of epitaxial AlInSb alloy layers.

Published in:

Semiconductors, 2011, v. 45, n. 11, p. 1425, doi. 10.1134/S1063782611110145

By:

Komkov, O.;
Semenov, A.;
Firsov, D.;
Meltser, B.;
Solov'ev, V.;
Popova, T.;
Pikhtin, A.;
Ivanov, S.

Publication type:

Article

Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 753, doi. 10.1134/S1063782611060121

By:

Kladko, V.;
Kuchuk, A.;
Safriuk, N.;
Machulin, V.;
Belyaev, A.;
Konakova, R.;
Yavich, B.;
Ber, B.;
Kazantsev, D.

Publication type:

Article

Anomalous long-term degradation of photoluminescence in porous silicon layers.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 788, doi. 10.1134/S1063782611060248

By:

Timokhov, D.;
Timokhov, F.

Publication type:

Article

Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 657, doi. 10.1134/S1063782611050162

By:

Khabibullin, R.;
Vasil'evskii, I.;
Galiev, G.;
Klimov, E.;
Ponomarev, D.;
Gladkov, V.;
Kulbachinskii, V.;
Klochkov, A.;
Uzeeva, N.

Publication type:

Article

Electrical, optical, and mechanical properties of amorphous hydrogenated carbon obtained under various deposition conditions.

Published in:

Semiconductors, 2011, v. 45, n. 1, p. 118, doi. 10.1134/S1063782611010039

By:

Babaev, A.;
Sultanov, S.;
Abdulvagabov, M.;
Terukov, E.

Publication type:

Article

The morphology, electron structure, and optical properties of self-assembled silicon nanostructures on the surface of highly oriented pyrolytic graphite.

Published in:

Semiconductors, 2011, v. 45, n. 1, p. 56, doi. 10.1134/S1063782611010179

By:

Nezhdanov, A.;
Filatov, D.;
Antonov, D.;
Zubkov, S.;
Mashin, A.;
Ershov, A.

Publication type:

Article

Photoprocesses in a semiconducting carbon photocapacitor with a double electrical layer.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 835, doi. 10.1134/S1063782610070018

By:

Ivashchyshyn, F. O.;
Grygorchak, I. I.;
Bakhmatyuk, B. P.

Publication type:

Article

Optical properties of quaternary GaNAsP semiconductor alloys.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 857, doi. 10.1134/S1063782610070043

By:

Egorov, A. Yu.;
Kryzhanovskaya, N. V.;
Pirogov, E. V.;
Pavlov, M. M.

Publication type:

Article

Morphology, twinning, and photoluminescence of ZnTe crystals grown by chemical synthesis from vapor-phase components.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 148, doi. 10.1134/S1063782606020060

By:

Klevkov, Yu. V.;
Martovitskiĭ, V. P.;
Bagaev, V. S.;
Krivobok, V. S.

Publication type:

Article

Stability of the photoresponse of Cd1− x ZnxTe crystals.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 128, doi. 10.1134/S1063782606020023

By:

Komar, V. K.;
Mygal, V. P.;
Sulima, S. V.;
Phomin, A. S.

Publication type:

Article

Effect of nonstoichiometry and doping on the photoconductivity spectra of GeSe layered crystals.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 137, doi. 10.1134/S1063782606020047

By:

Bletskan, D. I.;
Madyar, J. J.;
Kabaciy, V. N.

Publication type:

Article

Electrical properties and low-temperature photolumincesence of Si-doped CdTe crystals.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 143, doi. 10.1134/S1063782606020059

By:

Parfenyuk, O. A.;
Ilashchuk, M. I.;
Ulyanitskiĭ, K. S.;
Fochuk, P. M.;
Strilchuk, O. M.;
Krylyuk, S. G.;
Korbutyak, D. V.

Publication type:

Article

Monte Carlo simulation of the Dember effect in n-InAs exposed to femtosecond pulse laser excitation.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 155, doi. 10.1134/S1063782606020072

By:

Malevich, V. L.

Publication type:

Article

Scattering of conduction electrons at a spatially correlated system of charges in a heavily doped GaAs: Te semiconductor.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 161, doi. 10.1134/S1063782606020084

By:

Bogdanova, V. A.;
Davletkil’deev, N. A.;
Semikolenova, N. A.;
Sidorov, E. N.

Publication type:

Article

Photosensitivity of Pb1− x SnxTe:In films in the terahertz region of the spectrum.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 164, doi. 10.1134/S1063782606020096

By:

Akimov, A. N.;
Erkov, V. G.;
Kubarev, V. V.;
Molodtsova, E. L.;
Klimov, A. É.;
Shumskiĭ, V. N.

Publication type:

Article

Optical absorption and scattering at one-particle states of charge carriers in semiconductor quantum dots.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 217, doi. 10.1134/S1063782606020199

By:

Pokutniĭ, S. I.

Publication type:

Article

Electroluminescence of Graded-gap Structures with Blocking and Ohmic Contacts.

Published in:

Semiconductors, 2005, v. 39, n. 12, p. 1361, doi. 10.1134/1.2140304

By:

Sokolovskiı, B. S.;
Ivanov-Omskiı, V. I.;
Il'chuk, G. A.

Publication type:

Article

Characterization of Photonic Crystals Based on Opal–Semiconductor Composites by Bragg Reflection Spectroscopy.

Published in:

Semiconductors, 2005, v. 39, n. 12, p. 1374, doi. 10.1134/1.2140307

By:

Gadzhiev, G. M.;
Golubev, V. G.;
Kurdyukov, D. A.;
Pevtsov, A. B.;
Sel'kin, A. V.;
Travnikov, V. V.

Publication type:

Article

A Mechanism of Low-Temperature Stimulated Processes in Plasma Anodization of Metals and Semiconductors.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1263, doi. 10.1134/1.1823056

By:

Bibilashvili, A. P.;
Gerasimov, A. B.

Publication type:

Article