Green emission from semipolar InGaN quantum wells grown on low-defect (.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 105, doi. 10.1002/pssb.201552298
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Works matching DE "OPTICAL properties of indium gallium nitride"
Results: 22
1
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MOVPE growth and indium incorporation of polar, semipolar (11.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 93, doi. 10.1002/pssb.201552274
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- Article
3
InGaN/AlGaN stress compensated superlattices coherently grown on semipolar (.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 78, doi. 10.1002/pssb.201552336
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- Article
4
EBIC investigations on polar and semipolar InGaN LED structures.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 126, doi. 10.1002/pssb.201552284
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- Article
5
Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 140, doi. 10.1002/pssb.201552288
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- Article
6
Internal quantum efficiency and carrier injection efficiency of c-plane,.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 174, doi. 10.1002/pssb.201552187
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- Article
7
Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 133, doi. 10.1002/pssb.201552353
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- Article
8
Simulation of an indium gallium nitride quantum well light-emitting diode with the non-equilibrium Green's function method.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 158, doi. 10.1002/pssb.201552276
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- Article
9
On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 145, doi. 10.1002/pssb.201552419
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- Article
10
The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 1, p. N.PAG, doi. 10.1051/epjap/2011110184
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11
Composition-dependent structural, optical and electrical properties of In<sub>x</sub>Ga<sub>1-x</sub>N (0.5 ≤ x ≤ 0.93) thin films grown by modified activated reactive evaporation.
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- Journal of Materials Science, 2013, v. 48, n. 3, p. 1196, doi. 10.1007/s10853-012-6859-3
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- Article
12
Optical study of phase-separated thick InGaN layers grown on a compliant substrate.
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- Applied Physics A: Materials Science & Processing, 2015, v. 121, n. 2, p. 765, doi. 10.1007/s00339-015-9478-4
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- Article
13
Efficiency enhancement of InGaN amber MQWs using nanopillar structures.
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- Nanophotonics (21928606), 2018, v. 7, n. 1, p. 317, doi. 10.1515/nanoph-2017-0057
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- Article
14
A Monolithically Integrated InGaN Nanowire/Si Tandem Photoanode Approaching the Ideal Bandgap Configuration of 1.75/1.13 eV.
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- Advanced Energy Materials, 2017, v. 7, n. 2, p. n/a, doi. 10.1002/aenm.201600952
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- Article
15
Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates.
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- Journal of Materials Science, 2018, v. 53, n. 24, p. 16439, doi. 10.1007/s10853-018-2804-4
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- Article
16
Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells.
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- Materials (1996-1944), 2018, v. 11, n. 9, p. 1736, doi. 10.3390/ma11091736
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- Article
17
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a -plane and m -plane GaN substrates.
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- Science & Technology of Advanced Materials, 2016, v. 17, n. 1, p. 736, doi. 10.1080/14686996.2016.1244474
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- Article
18
Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes (Phys. Status Solidi A 5∕2017).
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 5, p. n/a, doi. 10.1002/pssa.201770130
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- Article
19
Optical, spectral, and thermal analyses of InGaN/GaN near-ultraviolet flip-chip light-emitting diodes with different package structures.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 5, p. n/a, doi. 10.1002/pssa.201600741
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- Article
20
InGaN/GaN heterostructures grown by submonolayer deposition.
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- Semiconductors, 2012, v. 46, n. 10, p. 1335, doi. 10.1134/S106378261210017X
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21
InGaN tandem blue-violet quantum well lasers with high frequency self-pulsations.
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- Optical & Quantum Electronics, 2015, v. 47, n. 5, p. 1047, doi. 10.1007/s11082-014-9960-9
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- Article
22
Investigation of structural, optical and morphological properties of InGaN/GaN structure.
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- Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 1, p. 1, doi. 10.1007/s00339-018-2338-2
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- Publication type:
- Article