Study of the morphology and optical properties of anodic oxide layers on InAs (111)III.
- Published in:
- Semiconductors, 2013, v. 47, n. 4, p. 555, doi. 10.1134/S1063782613040222
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- Article
Works matching DE "OPTICAL properties of indium arsenide"
Results: 7
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2
Performance Simulation of Unipolar InAs/InAs<sub>1−x</sub>Sb<sub>x</sub> Type-II Superlattice Photodetector.
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- Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4653, doi. 10.1007/s11664-018-6342-2
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- Article
3
A novel wavelength-adjusting method in InGaN-based light-emitting diodes.
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- Scientific Reports, 2013, p. 1, doi. 10.1038/srep03389
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- Article
4
Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers.
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- Nanoscale Research Letters, 2019, v. 14, n. 1, p. 1, doi. 10.1186/s11671-019-2877-2
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- Article
5
The Role of Groove Periodicity in the Formation of Site-Controlled Quantum Dot Chains.
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- Nanoscale Research Letters, 2015, v. 10, n. 1, p. 1, doi. 10.1186/s11671-015-0938-8
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- Publication type:
- Article
6
Transformation of type-II InAs/AlSb nanoscale heterostructure into type-I structure and improving interband optical gain.
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- Physica Status Solidi (B), 2017, v. 254, n. 5, p. n/a, doi. 10.1002/pssb.201600572
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- Article
7
Optical and structural properties of InAs nanoclusters in crystalline Si obtained through sequential ion implantation and RTA.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 12, p. 2686, doi. 10.1002/pssa.201532448
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- Publication type:
- Article