Works matching DE "OPTICAL properties of gallium nitride"
Results: 29
High Precision, Electrochemical Detection of Reversible Binding of Recombinant Proteins on Wide Bandgap GaN Electrodes Functionalized with Biomembrane Models.
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- Advanced Functional Materials, 2014, v. 24, n. 31, p. 4927, doi. 10.1002/adfm.201400388
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Theoretical studies on transforming a GaN semiconductor into a photonic crystal under a periodic external magnetic field.
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- Journal of Materials Science, 2013, v. 48, n. 3, p. 1147, doi. 10.1007/s10853-012-6852-x
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Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach.
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- Journal of Nano- & Electronic Physics, 2013, v. 5, n. 2, p. 02001-1
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Effect of Vacancy Defects on the Electronic Structure and Optical Properties of GaN.
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- Journal of Nanotechnology, 2017, p. 1, doi. 10.1155/2017/6987430
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Broadband compact reflector based on all-dielectric subwavelength nanoparticle chains: reflecting lights beyond normal incidence with a very high reflectivity.
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- Optical Engineering, 2013, v. 52, n. 6, p. 1, doi. 10.1117/1.OE.52.6.068001
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Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy.
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- Crystal Research & Technology, 2015, v. 50, n. 6, p. 425, doi. 10.1002/crat.201400468
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Effects of transition metal ions doping on optical and electronic properties of GaN.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 14, p. 10596, doi. 10.1007/s10854-017-6834-5
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Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells.
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- Materials (1996-1944), 2018, v. 11, n. 9, p. 1736, doi. 10.3390/ma11091736
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Temperature Dependence of Low‐Energy Electron Beam Irradiation Effect on Optical Properties of MQW InGaN/GaN Structures.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700646
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Effects of Introduction of InGaN Quantum Structures on Structural and Optical Properties of InGaN Nanocolumns.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700481
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Nanoscale cathodoluminescene imaging of III-nitride-based LEDs with semipolar quantum wells in a scanning transmission electron microscope.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 112, doi. 10.1002/pssb.201552474
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Defect reduced selectively grown GaN pyramids as template for green InGaN quantum wells.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 67, doi. 10.1002/pssb.201552427
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Complete orientational access for semipolar GaN devices on sapphire.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 23, doi. 10.1002/pssb.201552301
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Growth of semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 36, doi. 10.1002/pssb.201552271
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Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 180, doi. 10.1002/pssb.201552277
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Direct microscopic correlation of real structure and optical properties of semipolar GaN based on pre-patterned r-plane sapphire.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 54, doi. 10.1002/pssb.201552467
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Micro-LED pumped polymer laser: A discussion of future pump sources for organic lasers.
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- Laser & Photonics Reviews, 2013, v. 7, n. 6, p. 1065, doi. 10.1002/lpor.201300110
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A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing.
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- Materials (1996-1944), 2017, v. 10, n. 5, p. 482, doi. 10.3390/ma10050482
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Electronic and optical properties of GaN under pressure: DFT calculations.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 32, p. -1, doi. 10.1142/S0217979217502617
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Fascinating journeys into blue light (Nobel Lecture).
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- Annalen der Physik, 2015, v. 527, n. 5/6, p. 311, doi. 10.1002/andp.201500803
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A Highly Responsive Self‐Driven UV Photodetector Using GaN Nanoflowers.
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- Advanced Electronic Materials, 2017, v. 3, n. 5, p. 1, doi. 10.1002/aelm.201700036
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Electrical Characterization of GaN.
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- PIERS Proceedings, 2014, p. 1975
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A revolution in lighting.
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- Nature Materials, 2015, v. 14, n. 5, p. 454, doi. 10.1038/nmat4270
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Let there be light.
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- Nature Materials, 2015, v. 14, n. 5, p. 453, doi. 10.1038/nmat4287
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Complementary LED technologies.
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- Nature Materials, 2015, v. 14, n. 5, p. 459, doi. 10.1038/nmat4277
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p-GaN/i-In $$_\mathrm{x }$$ Ga1 $$_\mathrm{x }$$ N/n-GaN solar cell with indium compositional grading.
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- Optical & Quantum Electronics, 2015, v. 47, n. 5, p. 1117, doi. 10.1007/s11082-014-9968-1
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Computer study of the Raman spectra and infrared optical properties of gallium nitride and gallium arsenic nanoparticles with SiO core and shell.
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- Journal of Nanoparticle Research, 2014, v. 16, n. 4, p. 1, doi. 10.1007/s11051-014-2351-0
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Alkali-metal-adsorbed g-GaN monolayer: ultralow work functions and optical properties.
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- Nanoscale Research Letters, 2018, v. 13, n. 1, p. 1, doi. 10.1186/s11671-018-2625-z
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Omnidirectional Reflector with Total Internal Reflective Interface for Light Extraction Enhancement of Solid‐State Light Source.
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- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 5, p. N.PAG, doi. 10.1002/pssa.201700775
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