Works matching DE "OPTICAL properties of gallium nitride"

Results: 29

High Precision, Electrochemical Detection of Reversible Binding of Recombinant Proteins on Wide Bandgap GaN Electrodes Functionalized with Biomembrane Models.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 31, p. 4927, doi. 10.1002/adfm.201400388

By:

Frenkel, Nataliya;
Wallys, Jens;
Lippert, Sara;
Teubert, Jörg;
Kaufmann, Stefan;
Das, Aparna;
Monroy, Eva;
Eickhoff, Martin;
Tanaka, Motomu

Publication type:

Article

Effects of transition metal ions doping on optical and electronic properties of GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 14, p. 10596, doi. 10.1007/s10854-017-6834-5

By:

Majid, Abdul;
Ahmad, Naeem;
Khalid, N.;
Shakil, Muhammad;
Zhu, Jianjun

Publication type:

Article

Growth of semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 36, doi. 10.1002/pssb.201552271

By:

Hashimoto, Yasuhiro;
Yamane, Keisuke;
Okada, Narihito;
Tadatomo, Kazuyuki

Publication type:

Article

Nanoscale cathodoluminescene imaging of III-nitride-based LEDs with semipolar quantum wells in a scanning transmission electron microscope.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 112, doi. 10.1002/pssb.201552474

By:

Müller, Marcus;
Schmidt, Gordon;
Metzner, Sebastian;
Veit, Peter;
Bertram, Frank;
Leute, Robert Anton Richard;
Heinz, Dominik;
Wang, Junjun;
Meisch, Tobias;
Scholz, Ferdinand;
Christen, Jürgen

Publication type:

Article

Complete orientational access for semipolar GaN devices on sapphire.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 23, doi. 10.1002/pssb.201552301

By:

Leung, Benjamin;
Wang, Dili;
Kuo, Yu‐Sheng;
Han, Jung

Publication type:

Article

Defect reduced selectively grown GaN pyramids as template for green InGaN quantum wells.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 67, doi. 10.1002/pssb.201552427

By:

Wagner, J.;
Wächter, C.;
Wild, J.;
Müller, M.;
Metzner, S.;
Veit, P.;
Schmidt, G.;
Jetter, M.;
Bertram, F.;
Zweck, J.;
Christen, J.;
Michler, P.

Publication type:

Article

Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 180, doi. 10.1002/pssb.201552277

By:

Leute, Robert A. R.;
Heinz, Dominik;
Wang, Junjun;
Meisch, Tobias;
Müller, Marcus;
Schmidt, Gordon;
Metzner, Sebastian;
Veit, Peter;
Bertram, Frank;
Christen, Jürgen;
Martens, Martin;
Wernicke, Tim;
Kneissl, Michael;
Jenisch, Stefan;
Strehle, Steffen;
Rettig, Oliver;
Thonke, Klaus;
Scholz, Ferdinand

Publication type:

Article

Direct microscopic correlation of real structure and optical properties of semipolar GaN based on pre-patterned r-plane sapphire.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 54, doi. 10.1002/pssb.201552467

By:

Metzner, Sebastian;
Bertram, Frank;
Hempel, Thomas;
Meisch, Tobias;
Schwaiger, Stephan;
Scholz, Ferdinand;
Christen, Jürgen

Publication type:

Article

Omnidirectional Reflector with Total Internal Reflective Interface for Light Extraction Enhancement of Solid‐State Light Source.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 5, p. N.PAG, doi. 10.1002/pssa.201700775

By:

Yamae, Kazuyuki;
Fukshima, Hiroshi;
Fujimoto, Kozo

Publication type:

Article

Electrical Characterization of GaN.

Published in:

PIERS Proceedings, 2014, p. 1975

By:

Naz, Nazir A.;
Suleman, M.;
Ali, Akbar

Publication type:

Article

Computer study of the Raman spectra and infrared optical properties of gallium nitride and gallium arsenic nanoparticles with SiO core and shell.

Published in:

Journal of Nanoparticle Research, 2014, v. 16, n. 4, p. 1, doi. 10.1007/s11051-014-2351-0

By:

Galashev, Alexander

Publication type:

Article

Alkali-metal-adsorbed g-GaN monolayer: ultralow work functions and optical properties.

Published in:

Nanoscale Research Letters, 2018, v. 13, n. 1, p. 1, doi. 10.1186/s11671-018-2625-z

By:

Cui, Zhen;
Wang, Xia;
Li, Enling;
Ding, Yingchun;
Sun, Changlong;
Sun, Minglei

Publication type:

Article

Theoretical studies on transforming a GaN semiconductor into a photonic crystal under a periodic external magnetic field.

Published in:

Journal of Materials Science, 2013, v. 48, n. 3, p. 1147, doi. 10.1007/s10853-012-6852-x

By:

Dang, Suihu;
Li, Chunxia;
Han, Peide;
Jia, Wei;
Zhang, Zhuxia;
Zhang, Hua;
Liang, Jian;
Jia, Husheng;
Liu, Xuguang;
Xu, Bingshe

Publication type:

Article

Broadband compact reflector based on all-dielectric subwavelength nanoparticle chains: reflecting lights beyond normal incidence with a very high reflectivity.

Published in:

Optical Engineering, 2013, v. 52, n. 6, p. 1, doi. 10.1117/1.OE.52.6.068001

By:

Hao Li;
Wei Li;
Aimin Wu;
Chao Qiu;
Zhen Sheng;
Xi Wang;
Shichang Zou;
Fuwan Gan

Publication type:

Article

Electronic and optical properties of GaN under pressure: DFT calculations.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 32, p. -1, doi. 10.1142/S0217979217502617

By:

Javaheri, Sahar;
Boochani, Arash;
Babaeipour, Manuchehr;
Naderi, Sirvan

Publication type:

Article

A Highly Responsive Self‐Driven UV Photodetector Using GaN Nanoflowers.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 5, p. 1, doi. 10.1002/aelm.201700036

By:

Aggarwal, Neha;
Krishna, Shibin;
Sharma, Alka;
Goswami, Lalit;
Kumar, Dinesh;
Husale, Sudhir;
Gupta, Govind

Publication type:

Article

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells.

Published in:

Materials (1996-1944), 2018, v. 11, n. 9, p. 1736, doi. 10.3390/ma11091736

By:

Christian, George;
Kappers, Menno;
Massabuau, Fabien;
Humphreys, Colin;
Oliver, Rachel;
Dawson, Philip

Publication type:

Article

A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing.

Published in:

Materials (1996-1944), 2017, v. 10, n. 5, p. 482, doi. 10.3390/ma10050482

By:

Mei-Xin Feng;
Qian Sun;
Jian-Ping Liu;
Zeng-Cheng Li;
Yu Zhou;
Hong-Wei Gao;
Shu-Ming Zhang;
Hui Yang

Publication type:

Article

Fascinating journeys into blue light (Nobel Lecture).

Published in:

Annalen der Physik, 2015, v. 527, n. 5/6, p. 311, doi. 10.1002/andp.201500803

By:

Akasaki, Isamu

Publication type:

Article

Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy.

Published in:

Crystal Research & Technology, 2015, v. 50, n. 6, p. 425, doi. 10.1002/crat.201400468

By:

Garbe, Valentin;
Abendroth, Barbara;
Stöcker, Hartmut;
Gavrilov, Arkadi;
Cohen‐Elias, Doron;
Mehari, Shlomo;
Ritter, Dan;
Meyer, Dirk C.

Publication type:

Article

Micro-LED pumped polymer laser: A discussion of future pump sources for organic lasers.

Published in:

Laser & Photonics Reviews, 2013, v. 7, n. 6, p. 1065, doi. 10.1002/lpor.201300110

By:

Herrnsdorf, Johannes;
Wang, Yue;
McKendry, Jonathan J. D.;
Gong, Zheng;
Massoubre, David;
Guilhabert, Benoit;
Tsiminis, Georgios;
Turnbull, Graham A.;
Samuel, Ifor D. W.;
Laurand, Nicolas;
Gu, Erdan;
Dawson, Martin D.

Publication type:

Article

Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach.

Published in:

Journal of Nano- & Electronic Physics, 2013, v. 5, n. 2, p. 02001-1

By:

Kumar, Ashutosh;
Latzel, Michael;
Tessarek, C.;
Christiansen, S.;
Singh, R.

Publication type:

Article

Effect of Vacancy Defects on the Electronic Structure and Optical Properties of GaN.

Published in:

Journal of Nanotechnology, 2017, p. 1, doi. 10.1155/2017/6987430

By:

Cai, Lili;
Feng, Cuiju

Publication type:

Article

p-GaN/i-In $$_\mathrm{x }$$ Ga1 $$_\mathrm{x }$$ N/n-GaN solar cell with indium compositional grading.

Published in:

Optical & Quantum Electronics, 2015, v. 47, n. 5, p. 1117, doi. 10.1007/s11082-014-9968-1

By:

Mahala, Pramila;
Behura, Sanjay;
Ray, Abhijit;
Dhanavantri, Chenna;
Jani, Omkar

Publication type:

Article

Temperature Dependence of Low‐Energy Electron Beam Irradiation Effect on Optical Properties of MQW InGaN/GaN Structures.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700646

By:

Yakimov, Eugene B.;
Polyakov, Alexander Y.;
Vergeles, Pavel S.

Publication type:

Article

Effects of Introduction of InGaN Quantum Structures on Structural and Optical Properties of InGaN Nanocolumns.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700481

By:

Oto, Takao;
Mizuno, Yutaro;
Yoshida, Jun;
Yanagihara, Ai;
Miyagawa, Rin;
Ema, Kazuhiro;
Kishino, Katsumi

Publication type:

Article

A revolution in lighting.

Published in:

Nature Materials, 2015, v. 14, n. 5, p. 454, doi. 10.1038/nmat4270

By:

Pust, Philipp;
Schmidt, Peter J.;
Schnick, Wolfgang

Publication type:

Article

Let there be light.

Published in:: Nature Materials, 2015, v. 14, n. 5, p. 453, doi. 10.1038/nmat4287
Publication type:: Article

Complementary LED technologies.

Published in:

Nature Materials, 2015, v. 14, n. 5, p. 459, doi. 10.1038/nmat4277

By:

Reineke, Sebastian

Publication type:

Article