Works matching DE "OPTICAL properties of gallium arsenide"

Results: 30

Interface conduction and photo-induced electrical transport in the heterojunction formed by GaAs and Ce-doped SnO.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 7, p. 5415, doi. 10.1007/s10854-016-6202-x

By:

Machado, Diego;
Scalvi, Luis;
Tabata, Américo;
Silva, José

Publication type:

Article

Novel optical and structural properties of porous GaAs formed by anodic etching of n-GaAs in a HF:CHOH:HCl:HO:HO electrolyte: effect of etching time.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 7, p. 2254, doi. 10.1007/s10854-013-1087-4

By:

Naddaf, M.;
Saad, M.

Publication type:

Article

Electronic Structure and Optical Properties of GaAs1-xBix Alloy.

Published in:

Advances in Condensed Matter Physics, 2014, p. 1, doi. 10.1155/2014/496898

By:

Xindong You;
Renjie Zhou

Publication type:

Article

Structural and optical properties of diluted magnetic $$\hbox {Ga}_{{1-x}}\hbox {Mn}_{{x}}$$ As-AlAs quantum wells grown on high-index GaAs planes.

Published in:

Bulletin of Materials Science, 2017, v. 40, n. 7, p. 1355, doi. 10.1007/s12034-017-1487-9

By:

Gunes, Mustafa;
Gumus, Cebrail;
Gobato, Yara;
Henini, Mohamed

Publication type:

Article

Fabrication and Optical Properties of Strain-free Self-assembled Mesoscopic GaAs Structures.

Published in:

Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-016-1782-1

By:

da Silva, Saimon;
Mardegan, Thayná;
de Araújo, Sidnei;
Ramirez, Carlos;
Kiravittaya, Suwit;
Couto, Odilon;
Iikawa, Fernando;
Deneke, Christoph

Publication type:

Article

First-principles study on the electronic structure and optical properties of GaAs nanowires.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2015, v. 29, n. 4, p. -1, doi. 10.1142/S0217979215500149

By:

Wei, Xiang-Hai;
Gao, Tao;
Wan, Lei;
Lu, Peng-Fei

Publication type:

Article

Effect of optical and thermal stimulation on GaAs photosensitivity.

Published in:

Inorganic Materials, 2013, v. 49, n. 8, p. 754, doi. 10.1134/S0020168513070030

By:

Gabibov, F.;
Zobov, E.

Publication type:

Article

Optical properties of a GaAs cone-like quantum dot: Second and third-harmonic generation.

Published in:

Optics & Spectroscopy, 2014, v. 117, n. 3, p. 447, doi. 10.1134/S0030400X14080165

By:

Khordad, R.;
Bahramiyan, H.

Publication type:

Article

EFFECT OF THICKNESS ON THE OPTICAL PROPERTIES OF GaAs THIN FILMS.

Published in:

Journal of the Bangladesh Academy of Sciences, 2013, v. 37, n. 1, p. 83, doi. 10.3329/jbas.v37i1.15684

By:

DAS, CHITRA;
BEGUM, JAHANARA;
BEGUM, TAHMINA;
CHOUDHURY, SHAMIMA

Publication type:

Article

Erratum to: Nonlinear optical properties of asymmetric n-type double δ-doped GaAs quantum well under intense laser field.

Published in:

2018

By:

Sari, Huseyin;
Kasapoglu, Esin;
Yesilgul, Unal;
Sakiroglu, Serpil;
Ungan, Fatih;
Sökmen, Ismail

Publication type:

Correction Notice

Study of radial growth in patterned self-catalyzed GaAs nanowire arrays by gas source molecular beam epitaxy.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 845, doi. 10.1002/pssr.201307142

By:

Gibson, Sandra;
LaPierre, Ray

Publication type:

Article

Properties and tailoring of the ubiquitous core-shell p-n junction in semiconductor nanowires by δ-doping.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 894, doi. 10.1002/pssr.201307139

By:

Zervos, Matthew

Publication type:

Article

Built-in elastic strain and localization effects on GaAs luminescence of MOVPE-grown GaAs-AlGaAs core-shell nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 874, doi. 10.1002/pssr.201308046

By:

Prete, Paola;
Miccoli, Ilio;
Marzo, Fabio;
Lovergine, Nico

Publication type:

Article

Performance of Series Connected GaAs Photovoltaic Converters under Multimode Optical Fiber Illumination.

Published in:

Advances in OptoElectronics, 2014, p. 1, doi. 10.1155/2014/824181

By:

Tiqiang Shan;
Xinglin Qi

Publication type:

Article

On the origin of nonclassical light generation upon resonant excitation of a GaAs semiconductor microcavity.

Published in:

JETP Letters, 2017, v. 106, n. 8, p. 549, doi. 10.1134/S0021364017200073

By:

Demenev, A.;
Domaretskii, D.;
Parakhonskii, A.;
Lebedev, M.

Publication type:

Article

Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy.

Published in:

Semiconductors, 2018, v. 52, n. 8, p. 1012, doi. 10.1134/S1063782618080195

By:

Seredin, P. V.;
Goloshchapov, D. L.;
Zolotukhin, D. S.;
Lenshin, A. S.;
Lukin, A. N.;
Khudyakov, Yu. Yu.;
Arsentyev, I. N.;
Zhabotinsky, A. V.;
Nikolaev, D. N.;
Pikhtin, N. A.

Publication type:

Article

Effect of H implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 305, doi. 10.1134/S1063782617030113

By:

Klyui, N.;
Lozinskii, V.;
Liptuga, A.;
Dikusha, V.;
Oksanych, A.;
Kogdas', M.;
Perekhrest, A.;
Pritchin, S.

Publication type:

Article

Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 853, doi. 10.1134/S106378261607023X

By:

Seredin, P.;
Fedyukin, A.;
Arsentyev, I.;
Vavilova, L.;
Tarasov, I.;
Prutskij, T.;
Leiste, H.;
Rinke, M.

Publication type:

Article

Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 185, doi. 10.1134/S1063782616020123

By:

Khabibullin, R.;
Yachmenev, A.;
Lavrukhin, D.;
Ponomarev, D.;
Bugayev, A.;
Maltsev, P.

Publication type:

Article

Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 911, doi. 10.1134/S1063782615070179

By:

Lavrukhin, D.;
Yachmenev, A.;
Bugaev, A.;
Galiev, G.;
Klimov, E.;
Khabibullin, R.;
Ponomarev, D.;
Maltsev, P.

Publication type:

Article

Influence of pulse magnetic fields treatment on optical properties of GaAs based films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 2, p. 130

By:

Konakova, R. V.;
Sosnova, M. V.;
Red'ko, S. M.;
Milenin, V. V.;
Red'ko, R. A.

Publication type:

Article

Hydrostatic Pressure and Temperature Effect on the Electron-Related Optical Responses in Symmetric and Asymmetric n-Type Double Delta-Doped GaAs Quantum Well Under Terahertz Laser Field.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 6, p. 3537, doi. 10.1007/s11664-019-07102-z

By:

Ungan, F.;
Mora-Ramos, M. E.;
Sari, H.;
Sökmen, I.

Publication type:

Article

Optical Properties of Energy-Dependent Effective Mass GaAs/GaxIn1−xAs and GaAs/AlxGa1−xAs Quantum Well Systems: A Shooting Method Study.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 2, p. 942, doi. 10.1007/s11664-018-6813-5

By:

Solaimani, M.;
Aleomraninejad, Seyed Mohammad Ali

Publication type:

Article

Effect of Annealing on the Density of Defects in Epitaxial CdTe (211)/GaAs.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4780, doi. 10.1007/s11664-018-6352-0

By:

Bakali, Emine;
Selamet, Yusuf;
Tarhan, Enver

Publication type:

Article

Charge sensitivity simulation on a double barrier GaAs/InGaAs/InAs quantum dot-in-well hybrid structure photodetector.

Published in:

Optical & Quantum Electronics, 2015, v. 47, n. 6, p. 1451, doi. 10.1007/s11082-014-0111-0

By:

Wang, W.;
Wang, M.;
Jin, X.;
Guo, F.;
Li, Y.

Publication type:

Article

Photo-induced excitonic spin dynamics in GaAs.

Published in:

Optical & Quantum Electronics, 2015, v. 47, n. 5, p. 1239, doi. 10.1007/s11082-014-9981-4

By:

Miah, M.;
Naheed, Lubna

Publication type:

Article

Refractive index change and absorption coefficient of T shaped quantum wires: comparing with experimental results.

Published in:

Optical & Quantum Electronics, 2014, v. 46, n. 2, p. 283, doi. 10.1007/s11082-013-9759-0

By:

Khordad, R.

Publication type:

Article

InGaP//GaAs//c-Si 3-junction solar cells employing spectrum-splitting system.

Published in:

Progress in Photovoltaics, 2016, v. 24, n. 7, p. 1016, doi. 10.1002/pip.2753

By:

Kang, Dong‐Won;
Takiguchi, Yuki;
Sichanugrist, Porponth;
Konagai, Makoto

Publication type:

Article

Thermally enhanced external photoelectric emission theoretical study for transmissive exponentially doped GaAs photocathode.

Published in:

Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 1, p. 1, doi. 10.1007/s00339-018-2337-3

By:

Liu, Lei;
Lu, Feifei;
Feng, Shu;
Xia, Sihao;
Diao, Yu

Publication type:

Article

Mid-Infrared linear optical transitions in δ-doped AlGaAs/GaAs triple-quantum well.

Published in:

Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 1, p. 1, doi. 10.1007/s00339-018-2321-y

By:

Restrepo, R. L.;
Castaño-Vanegas, L. F.;
Martínez-Orozco, J. C.;
Morales, A. L.;
Duque, C. A.

Publication type:

Article

Works matching DE "OPTICAL properties of gallium arsenide"

Interface conduction and photo-induced electrical transport in the heterojunction formed by GaAs and Ce-doped SnO.

Novel optical and structural properties of porous GaAs formed by anodic etching of n-GaAs in a HF:CHOH:HCl:HO:HO electrolyte: effect of etching time.

Electronic Structure and Optical Properties of GaAs<sub>1-x</sub>Bi<sub>x</sub> Alloy.

Structural and optical properties of diluted magnetic $$\hbox {Ga}_{{1-x}}\hbox {Mn}_{{x}}$$ As-AlAs quantum wells grown on high-index GaAs planes.

Fabrication and Optical Properties of Strain-free Self-assembled Mesoscopic GaAs Structures.

First-principles study on the electronic structure and optical properties of GaAs nanowires.

Effect of optical and thermal stimulation on GaAs photosensitivity.

Optical properties of a GaAs cone-like quantum dot: Second and third-harmonic generation.

EFFECT OF THICKNESS ON THE OPTICAL PROPERTIES OF GaAs THIN FILMS.

Erratum to: Nonlinear optical properties of asymmetric n-type double δ-doped GaAs quantum well under intense laser field.

Study of radial growth in patterned self-catalyzed GaAs nanowire arrays by gas source molecular beam epitaxy.

Properties and tailoring of the ubiquitous core-shell p-n junction in semiconductor nanowires by δ-doping.

Built-in elastic strain and localization effects on GaAs luminescence of MOVPE-grown GaAs-AlGaAs core-shell nanowires.

Performance of Series Connected GaAs Photovoltaic Converters under Multimode Optical Fiber Illumination.

On the origin of nonclassical light generation upon resonant excitation of a GaAs semiconductor microcavity.

Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy.

Effect of H implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region.

Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium.

Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates.

Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures.

Influence of pulse magnetic fields treatment on optical properties of GaAs based films.

Hydrostatic Pressure and Temperature Effect on the Electron-Related Optical Responses in Symmetric and Asymmetric n-Type Double Delta-Doped GaAs Quantum Well Under Terahertz Laser Field.

Optical Properties of Energy-Dependent Effective Mass GaAs/Ga<sub>x</sub>In<sub>1−x</sub>As and GaAs/Al<sub>x</sub>Ga<sub>1−x</sub>As Quantum Well Systems: A Shooting Method Study.

Effect of Annealing on the Density of Defects in Epitaxial CdTe (211)/GaAs.

Charge sensitivity simulation on a double barrier GaAs/InGaAs/InAs quantum dot-in-well hybrid structure photodetector.

Photo-induced excitonic spin dynamics in GaAs.

Refractive index change and absorption coefficient of T shaped quantum wires: comparing with experimental results.

InGaP//GaAs//c-Si 3-junction solar cells employing spectrum-splitting system.

Thermally enhanced external photoelectric emission theoretical study for transmissive exponentially doped GaAs photocathode.

Mid-Infrared linear optical transitions in δ-doped AlGaAs/GaAs triple-quantum well.