Fractal size, occupied fraction study with annealing of heterostructure based AlGaN.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 3, p. 2040, doi. 10.1007/s10854-017-8116-7
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- Publication type:
- Article
Works matching DE "OPTICAL properties of aluminum gallium nitride"
Results: 6
1
2
Epitaxial growth and optical characterization of AlInGaN quaternary alloys with high Al/In mole ratio.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 2, p. 705, doi. 10.1007/s10854-014-2453-6
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- Publication type:
- Article
3
Polarization engineering of c-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers.
- Published in:
- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 118, doi. 10.1002/pssb.201552448
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- Article
4
Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells.
- Published in:
- Scientific Reports, 2019, v. 9, n. 1, p. 1, doi. 10.1038/s41598-019-53693-2
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- Publication type:
- Article
5
Enhancement of Emission Efficiency of Deep-Ultraviolet AlGaN Quantum Wells Through Surface Plasmon Coupling with an Al Nanograting Structure.
- Published in:
- Plasmonics, 2018, v. 13, n. 3, p. 863, doi. 10.1007/s11468-017-0582-5
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- Publication type:
- Article
6
Long-Range Surface Plasmon Polaritons for Efficient Optical Coupling in AlGaN/GaN Quantum Well Infrared Photodetector.
- Published in:
- Plasmonics, 2016, v. 11, n. 3, p. 833, doi. 10.1007/s11468-015-0116-y
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- Publication type:
- Article