Works about OHMIC contacts

Results: 869

Selective Transparent Contacts Based on a Hafnium‐Titanium Oxide Alloy with Optimized Band Alignment for c‐Si Solar Cells.

Published in:

Advanced Materials Interfaces, 2025, v. 12, n. 12, p. 1, doi. 10.1002/admi.202500083

By:

Tamin, Charif;
Chevalier, Céline;
Bharwal, Anil Kumar;
Botella, Claude;
Fix, Thomas;
Fave, Alain;
Fourmond, Erwann

Publication type:

Article

Advancing Organic Photovoltaics: the Role of Dipole Distance and Acidity in Perylene‐Diimide Electron Transport Layers.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 26, p. 1, doi. 10.1002/adfm.202420588

By:

Zhang, Wanqing;
Ding, Xiaoman;
Lv, Jie;
Sun, Xiaokang;
Hu, Dingqin;
Zhang, Guangye;
Gao, Chuanlin;
Xue, Yizebang;
Zhong, Yufei;
Li, Gang;
Hu, Hanlin

Publication type:

Article

MODIFICATION IN OPTICAL AND ELECTRICAL PROPERTIES OF POLY(METHYL METHACRYLATE) ON BLENDING WITH POLYANILINE.

Published in:

International Journal of Nanoscience, 2011, v. 10, n. 4/5, p. 1107, doi. 10.1142/S0219581X11009507

By:

TOMAR, A. K.;
MAHENDIA, SUMAN;
KUMAR, SHYAM

Publication type:

Article

Effect of Intercalated LiF on Interface Contact Characteristics of MoS2 Field Effect Transistor: A First‐Principles Study.

Published in:

Annalen der Physik, 2023, v. 535, n. 7, p. 1, doi. 10.1002/andp.202300061

By:

Hou, Weimin;
Chen, Li;
Yang, Maoyou;
Zhang, Mingjian;
Wang, Junmei;
Shi, Jiakuo;
Su, Shuo;
Zhang, Duo;
Wu, Hongping

Publication type:

Article

Ab Initio Simulation of Ta2O5: A High Symmetry Ground State Phase with Application to Interface Calculation.

Published in:

Annalen der Physik, 2019, v. 531, n. 8, p. N.PAG, doi. 10.1002/andp.201800524

By:

Yuan, Jun‐Hui;
Xue, Kan‐Hao;
Chen, Qi;
Fonseca, Leonardo R. C.;
Miao, Xiang‐Shui

Publication type:

Article

Perfluorinated Ionomer-Modified Hole-Injection Layers: Ultrahigh-Workfunction but Nonohmic Contacts.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 34, p. 5504, doi. 10.1002/adfm.201500784

By:

Belaineh, Dagmawi;
Tan, Jun‐Kai;
Png, Rui‐Qi;
Dee, Pei‐Fang;
Lee, Yi‐Min;
Thi, Bao‐Nguyen Nguyen;
Ridzuan, Nur‐Sabrina;
Ho, Peter K. H.

Publication type:

Article

Control of Ambipolar and Unipolar Transport in Organic Transistors by Selective Inkjet-Printed Chemical Doping for High Performance Complementary Circuits.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 40, p. 6252, doi. 10.1002/adfm.201400850

By:

Khim, Dongyoon;
Baeg, Kang‐Jun;
Caironi, Mario;
Liu, Chuan;
Xu, Yong;
Kim, Dong‐Yu;
Noh, Yong‐Young

Publication type:

Article

In-Situ Switching from Barrier-Limited to Ohmic Anodes for Efficient Organic Optoelectronics.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 20, p. 3051, doi. 10.1002/adfm.201303426

By:

Tan, Zhi‐Kuang;
Vaynzof, Yana;
Credgington, Dan;
Li, Cheng;
Casford, Mike T. L.;
Sepe, Alessandro;
Huettner, Sven;
Nikolka, Mark;
Paulus, Fabian;
Yang, Le;
Sirringhaus, Henning;
Greenham, Neil C.;
Friend, Richard H.

Publication type:

Article

Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 1, p. 9, doi. 10.1007/s10854-008-9586-4

By:

Reddy, V. Rajagopal;
Sang-Ho Kim;
Hyun-Gi Hong;
Sang-Won Yoon;
Jae-Pyoung Ahn;
Tae-Yeon Seong

Publication type:

Article

Power loss calculation as a reliable methodology to assess the ohmic losses of the planar ohmic contacts formed on the photovoltaic devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 7, p. 594, doi. 10.1007/s10854-007-9395-1

By:

Vinod, P.

Publication type:

Article

Electrical studies on sputtered CuCl thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 103, doi. 10.1007/s10854-007-9310-9

By:

Natarajan, Gomathi;
Rajendra Kumar, R. T.;
Daniels, S.;
Cameron, D. C.;
McNally, P. J.

Publication type:

Article

High temperature assessment of nitride-based devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 189, doi. 10.1007/s10854-007-9298-1

By:

Cuerdo, R.;
Pedrós, J.;
Navarro, A.;
Braña, A. F.;
Pau, J. L.;
Muñoz, E.;
Calle, F.

Publication type:

Article

Application of power loss calculation to estimate the specific contact resistance of the screen-printed silver ohmic contacts of the large area silicon solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 8, p. 805, doi. 10.1007/s10854-007-9210-z

By:

Vinod, P. N.

Publication type:

Article

Improvement of Ge/Pd/GaAs ohmic contact by In layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 6, p. 621, doi. 10.1007/s10854-007-9122-y

By:

Macháč, Petr;
Sajdl, Petr;
Machovič, Vladimír

Publication type:

Article

Електричні та механічні властивості композитів Ti-вуглецеві нанотрубки

Published in:

Metallophysics & Advanced Technologies / Metallofizika i Novejsie Tehnologii, 2020, v. 42, n. 4, p. 575, doi. 10.15407/mfint.42.04.0575

By:

Михайлова, Г. Ю.;
Лень, Є. Г.;
Галстян, І. Є.;
Цапко, Є. А.;
Герасимов, О. Ю.;
Патока, В. І.;
Сидорченко, І. М.;
Якимчук, М. М.

Publication type:

Article

Studies of Runaway Electrons in the Globus-M Tokamak.

Published in:

Plasma Physics Reports, 2004, v. 30, n. 2, p. 159, doi. 10.1134/1.1648942

By:

Shevelev, A. E.;
Chugunov, I. N.;
Gusev, V. K.;
Petrov, Yu. V.;
Rozhdestvenski&icaron;, V. V.;
Mineev, A. B.;
Sakharov, N. V.;
Do&icaron;nikov, D. N.;
Izotov, A. L.;
Krikunov, S. V.;
Na&icaron;denov, V. O.;
Podushnikova, K. A.;
Polunovski&icaron;, I. A.;
Gin, D. B.;
Chugunov, A. I.

Publication type:

Article

Ohmic Contact Formation to β -Ga 2 O 3 Nanosheet Transistors with Ar-Containing Plasma Treatment.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 16, p. 3181, doi. 10.3390/electronics13163181

By:

Chen, Jin-Xin;
Liu, Bing-Yan;
Gu, Yang;
Li, Bin

Publication type:

Article

Optimization of Contact Resistance and DC Characteristics for AlGaN/GaN HEMTs Utilizing Sub-10 nm Nanohole Etching.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 13, p. 2490, doi. 10.3390/electronics13132490

By:

Lee, Hsin-Jung;
Lee, Cheng-Che;
Pan, Hong-Ru;
Kuan, Chieh-Hsiung

Publication type:

Article

Exploring the Odd–Even Effect, Current Stabilization, and Negative Differential Resistance in Carbon-Chain-Based Molecular Devices.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 9, p. 1764, doi. 10.3390/electronics13091764

By:

Wang, Lijun;
Zhou, Liping;
Wang, Xuefeng;
You, Wenlong

Publication type:

Article

SiC Fin-Channel MOSFET for Enhanced Gate Shielding Effect.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 9, p. 1701, doi. 10.3390/electronics13091701

By:

Sang, Ling;
Jin, Rui;
Cui, Jiawei;
Niu, Xiping;
Li, Zheyang;
Yang, Junjie;
Nuo, Muqin;
Zhang, Meng;
Wang, Maojun;
Wei, Jin

Publication type:

Article

How to Accurately Determine the Ohmic Contact Properties on n-Type 4H-SiC.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 1, p. 217, doi. 10.3390/electronics13010217

By:

Berger, Clément;
Alquier, Daniel;
Michaud, Jean-François

Publication type:

Article

Optimization of Ohmic Contact to Ultrathin-Barrier AlGaN/GaN Heterostructure via an 'Ohmic-Before-Passivation' Process.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 8, p. 1767, doi. 10.3390/electronics12081767

By:

Ji, Yuan;
Huang, Sen;
Jiang, Qimeng;
Zhang, Ruizhe;
Fan, Jie;
Yin, Haibo;
Zheng, Yingkui;
Wang, Xinhua;
Wei, Ke;
Liu, Xinyu

Publication type:

Article

GaN-Based PCSS with High Breakdown Fields.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 13, p. 1600, doi. 10.3390/electronics10131600

By:

Gaddy, Matthew;
Kuryatkov, Vladimir;
Wilson, Nicholas;
Neuber, Andreas;
Ness, Richard;
Nikishin, Sergey

Publication type:

Article

Optimization of Oxygen Plasma Treatment on Ohmic Contact for AlGaN/GaN HEMTs on High-Resistivity Si Substrate.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 7, p. 855, doi. 10.3390/electronics10070855

By:

Li, Pengfei;
Wei, Shuhua;
Kang, Xuanwu;
Zheng, Yingkui;
Zhang, Jing;
Wu, Hao;
Wei, Ke;
Yan, Jiang;
Liu, Xinyu;
Jariwala, Deep

Publication type:

Article

AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 6, p. 635, doi. 10.3390/electronics10060635

By:

Abid, Idriss;
Mehta, Jash;
Cordier, Yvon;
Derluyn, Joff;
Degroote, Stefan;
Miyake, Hideto;
Medjdoub, Farid;
Arulkumaran, Subramaniam

Publication type:

Article

High-Throughput Measurement of the Contact Resistance of Metal Electrode Materials and Uncertainty Estimation.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 12, p. 2079, doi. 10.3390/electronics9122079

By:

Zhang, Chao;
Ren, Wanbin

Publication type:

Article

Investigation of Electrical Contacts to p-Grid in SiC Power Devices Based on Charge Storage Effect and Dynamic Degradation.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 10, p. 1723, doi. 10.3390/electronics9101723

By:

Zhang, Meng;
Li, Baikui;
Hua, Mengyuan;
Wei, Jin

Publication type:

Article

PHYSICAL AND TECHNOLOGICAL FEATURES OF FORMATION OF METALLIZATION OF SUBMICRON ARSENIDE-GALLIUM STRUCTURES IN LARGE-SCALE INTEGRATED CIRCUITS BY ION MILLING.

Published in:

Eastern-European Journal of Enterprise Technologies, 2013, v. 4, n. 5, p. 3

By:

Novosyadliy, Stepan;
Kindrat, Taras;
Melnik, Lubomyr;
Varvaruk, Vasiliy

Publication type:

Article

PHYSICAL AND TECHNOLOGICAL FEATURES OF FORMATION OF METALLIZATION OF SUBMICRON ARSENIDE-GALLIUM STRUCTURES IN LARGE-SCALE INTEGRATED CIRCUITS BY ION MILLING.

Published in:

Eastern-European Journal of Enterprise Technologies, 2013, v. 4, n. 5, p. 45

By:

Novosyadliy, Stepan;
Kindrat, Taras;
Melnik, Lubomyr;
Varvaruk, Vasiliy

Publication type:

Article

Design of ohmic contacts between Janus MoSSe and two-dimensional metals.

Published in:

NPG Asia Materials, 2023, v. 15, n. 1, p. 1, doi. 10.1038/s41427-023-00517-5

By:

Zhao, Ning;
Tyagi, Shubham;
Schwingenschlögl, Udo

Publication type:

Article

Approaching barrier-free contacts to monolayer MoS2 employing [Co/Pt] multilayer electrodes.

Published in:

NPG Asia Materials, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41427-021-00284-1

By:

Gupta, S.;
Rortais, F.;
Ohshima, R.;
Ando, Y.;
Endo, T.;
Miyata, Y.;
Shiraishi, M.

Publication type:

Article

Technological Features of Real Contact Systems’ Production for Nanosystem Equipment.

Published in:

Journal of Nano- & Electronic Physics, 2022, v. 14, n. 5, p. 1, doi. 10.21272/jnep.14(5).05014

By:

Nikonova, A. A.;
Nebesniuk, O. Y.;
Nikonova, Z. A.

Publication type:

Article

Features of Noise Generation in Graded-Gap III Nitride-based Diodes.

Published in:

Journal of Nano- & Electronic Physics, 2022, v. 14, n. 1, p. 01029-1, doi. 10.21272/jnep.14(1).01029

By:

Prykhodko, K. H.;
Plaksin, S. V.

Publication type:

Article

Utility of a Reverse Double-drift Structure for Fabricating GaN IMPATT Diode Operating in the Terahertz Regime.

Published in:

Journal of Nano- & Electronic Physics, 2021, v. 13, n. 3, p. 03014-1, doi. 10.21272/jnep.13(3).03014

By:

Khan, Sahanowaj;
Dutta, Rishav;
Acharyya, Aritra;
Biswas, Arindam;
Hiroshi Inokawa;
Dhar, Rudra Sankar

Publication type:

Article

Generation of THz Oscillations by Diodes with Resonant Tunneling Boundaries.

Published in:

Journal of Nano- & Electronic Physics, 2020, v. 12, n. 6, p. 06037-1, doi. 10.21272/jnep.12(6).06037

By:

Botsula, O. V.;
Zozulia, V. O.

Publication type:

Article

Effect of Porous GaAs Layer Morphology on Pd/porous GaAs Schottky Contactg.

Published in:

Journal of Nano- & Electronic Physics, 2019, v. 11, n. 5, p. 1, doi. 10.21272/jnep.11(5).05007

By:

Oksanich, A. P.;
Pritchin, S. E.;
Kogdas, M. G.;
Kholod, A. G.;
Shevchenko, I. V.

Publication type:

Article

Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor.

Published in:

Journal of Nano- & Electronic Physics, 2016, v. 8, n. 2, p. 1, doi. 10.21272/jnep.8(2).02044

By:

Rogachev, I. A.;
Knyazkov, A. V.;
Meshkov, O. I.;
Kurochka, A. S.

Publication type:

Article

Low‐Temperature Processing to Obtain Contact Resistance of <0.03 Ohm mm to Boron‐Doped Diamond.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 7, p. 1, doi. 10.1002/pssa.202400636

By:

Hardy, Aaron;
Geis, Michael W.;
Daulton, Jeffery W.;
Turner, George W.;
Polking, Mark J.;
Liddell, John;
Nebiolo, Emily;
Myszka, Michael;
Hollis, Mark A.;
Ivanov, Tony G.;
Birdwell, A. Glen;
Ruzmetov, Dmitry;
Weil, James;
Jankowski, Nicholas R.;
Grotjohn, Timothy A.;
Zhang, Beijia

Publication type:

Article

Effects of Thermal Annealing on V‐Based Ohmic Contacts on n‐Type AlGaN with High Al Content.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400148

By:

Ebata, Kazuaki;
Hiroki, Masanobu;
Tateno, Kouta;
Kumakura, Kazuhide;
Taniyasu, Yoshitaka

Publication type:

Article

Low‐Resistivity Ti/Al/TiN/Au Ohmic Contacts to Ga‐ and N‐Face n‐GaN for Vertical Power Devices.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400076

By:

Sadowski, Oskar;
Kamiński, Maciej;
Taube, Andrzej;
Tarenko, Jarosław;
Guziewicz, Marek;
Wzorek, Marek;
Maleszyk, Justyna;
Jóźwik, Iwona;
Szerling, Anna;
Prystawko, Paweł;
Boćkowski, Michał;
Grzegory, Izabella

Publication type:

Article

Simulation Study of Aluminum Nitride TrenchFETs with Polarization‐Induced Doping.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400045

By:

Faber, Samuel;
Römer, Friedhard;
Witzigmann, Bernd

Publication type:

Article

Ferroelectric‐Gated HfZrO2/AlGaN/GaN High‐Electron‐Mobility Transistors with Regrown Contacts for Radio Frequency and Millimeter‐Wave Switch Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202300654

By:

Jönsson, Adam;
Turner, Wesley;
Ye, Hansheng;
Wu, Weifeng;
Venkatesan, Nivedita;
Xie, Andy;
Beam, Edward;
Cao, Yu;
Fay, Patrick

Publication type:

Article

Reverse Blocking Enhancement‐Mode AlGaN/GaN HEMTs with Hybrid p‐GaN Ohmic Drain on the Si Substrates.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 4, p. 1, doi. 10.1002/pssa.202300675

By:

Zhao, Yaopeng;
Ren, Dong;
Luo, Pan;
Wang, Chong;
Yang, Lei;
Wen, Haibing;
Liu, Kai;
Li, Ang

Publication type:

Article

Pseudo‐Vertical Schottky Diode with Ruthenium Contacts on (113) Boron‐Doped Homoepitaxial Diamond Layers.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 23, p. 1, doi. 10.1002/pssa.202300508

By:

Hazdra, Pavel;
Laposa, Alexandr;
Šobáň, Zbyněk;
Kroutil, Jiří;
Lambert, Nicolas;
Povolný, Vojtěch;
Taylor, Andrew;
Mortet, Vincent

Publication type:

Article

Effect of Ar‐Based Reactive Ion Etching on the Ohmic Contacts in Gallium Oxide Field Effect Transistor.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 23, p. 1, doi. 10.1002/pssa.202200722

By:

Kachhawa, Pharyanshu;
Jain, Amber Kumar;
Chaturvedi, Nidhi

Publication type:

Article

All‐Oxide Transparent Vertical Indium Tin Oxide and Aluminum‐Doped Zinc Oxide/β‐Ga2O3 Schottky Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 19, p. 1, doi. 10.1002/pssa.202300251

By:

Taube, Andrzej;
Borysiewicz, Michał A.;
Sadowski, Oskar;
Wójcicka, Aleksandra;
Tarenko, Jarosław;
Wzorek, Marek

Publication type:

Article

Highly Si‐Doped GaN Regrown by Metal–Organic Vapor‐Phase Epitaxy for Ohmic Contact Applied to Quaternary Barrier‐Based High‐Electron‐Mobility Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200476

By:

Pitaval, Charles;
Lacam, Cédric;
Defrance, Nicolas;
Gaquière, Christophe;
Michel, Nicolas;
Parillaud, Olivier;
Delage, Sylvain L.

Publication type:

Article

A Hybrid Schottky–Ohmic Drain Contact for Thermally Stressed Beta‐Gallium Oxide Field‐Effect Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 5, p. 1, doi. 10.1002/pssa.202200596

By:

Jeong, Yeong Je;
Lee, Chan Ho;
Yeom, Min Jae;
Yang, Jeong Yong;
Yoo, Geonwook

Publication type:

Article

Corrosion‐Resistive and Low Specific Contact Resistance Ohmic Contacts to Semiconducting Diamonds Using Nanocarbon Electrodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 3, p. 1, doi. 10.1002/pssa.202200627

By:

Mylo Valappil, Sreenath;
Zkria, Abdelrahman;
Ohmagari, Shinya;
Naragino, Hiroshi;
Kato, Hiromitsu;
Yoshitake, Tsuyoshi

Publication type:

Article

Performance Improvement in AlGaN/GaN High‐Electron‐Mobility Transistors by Low‐Temperature Inductively Coupled Plasma–Chemical Vapor Deposited SiNx as Gate Dielectric and Surface Passivation.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 24, p. 1, doi. 10.1002/pssa.202200509

By:

Surana, Vivek Kumar;
Ganguly, Swaroop;
Saha, Dipankar

Publication type:

Article