Works matching DE "OHMIC contacts"

Results: 861

Robust Transition Metal Contacts for Aligned Carbon Nanotubes.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 10, p. 736, doi. 10.3390/nano15100736

By:

Huang, Gang;
Wu, Junhong;
Li, Haiou;
Liu, Honggang

Publication type:

Article

Impact of contact properties on the performance of β-Ga2O3 solar-blind photodetector.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 319, doi. 10.1140/epjs/s11734-024-01459-x

By:

Dong, Yu-Song;
Liang, Ming-Xuan;
Qian, Ling-Xuan

Publication type:

Article

Characterization of Ohmic Metal/Hg1−xCdxTe Contacts for Infrared Detection.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 12, p. 8098, doi. 10.1007/s11664-024-11295-3

By:

Frau, Elise;
Sam-Giao, Diane;
Kerlain, Alexandre;
Brylinski, Christian

Publication type:

Article

Graphene-Based Field-Effect Photodetector with HgCdTe Absorber.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 10, p. 5865, doi. 10.1007/s11664-024-11314-3

By:

Sheremet, Volodymyr;
Rabbe, Md Fazle;
Jacobs, Randy N.;
Avrutin, Vitaliy;
Ӧzgür, Ümit;
Dhar, Nibir K.

Publication type:

Article

Versatile p-Type Chemical Doping to Achieve Ideal Flexible Graphene Electrodes.

Published in:

Angewandte Chemie, 2016, v. 128, n. 21, p. 6305, doi. 10.1002/ange.201600414

By:

Han, Tae ‐ Hee;
Kwon, Sung ‐ Joo;
Li, Nannan;
Seo, Hong ‐ Kyu;
Xu, Wentao;
Kim, Kwang S.;
Lee, Tae ‐ Woo

Publication type:

Article

Structure and properties of Ta/Al/Ta and Ti/Al/Ti/Au multilayer metal stacks formed as ohmic contacts on n-GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 19, p. 18144, doi. 10.1007/s10854-019-02167-2

By:

Boturchuk, Ievgen;
Walter, Thomas;
Julsgaard, Brian;
Khatibi, Golta;
Schwarz, Sabine;
Stöger-Pollach, Michael;
Pedersen, Kjeld;
Popok, Vladimir N.

Publication type:

Article

Effect of different lubricant films on contact resistance of stationary separable gold-plated electrical contacts.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 15, p. 14368, doi. 10.1007/s10854-019-01806-y

By:

Kaushik, Lovlesh;
Azarian, Michael H.;
Pecht, Michael

Publication type:

Article

Practical evaluation of electrical contact resistance of thermoelectric legs at high operation temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 15, p. 14112, doi. 10.1007/s10854-019-01777-0

By:

Kim, Yeongseon;
Song, Jinseop;
Yoon, Giwan;
Yoo, Chung-Yul;
Park, Sang Hyun

Publication type:

Article

Double-exponential current–voltage (I–V) and negative capacitance (NC) behavior of Al/(CdSe-PVA)/p-Si/Al (MPS) structure.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 10, p. 9572, doi. 10.1007/s10854-019-01291-3

By:

Büyükbaş-Uluşan, A.;
Tataroğlu, A.;
Azizian-Kalandaragh, Y.;
Koşal, M.

Publication type:

Article

Low resistivity ohmic contacts on lightly doped n-type β-Ga2O3 using Mg/Au.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 4, p. 3860, doi. 10.1007/s10854-019-00669-7

By:

Shi, Jianjun;
Xia, Xiaochuan;
Liang, Hongwei;
Abbas, Qasim;
Liu, Jun;
Zhang, Heqiu;
Liu, Yang

Publication type:

Article

Effect of graphene concentration on performance of MEH:PPV/graphene nanocomposite based devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 10, p. 7979, doi. 10.1007/s10854-018-8801-1

By:

Yadav, Anjali;
Upadhyaya, Aditi;
Gupta, Saral K.;
Verma, Ajay Singh;
Singh, Amarjeet;
Rathore, Priyanka;
Negi, Chandra Mohan Singh

Publication type:

Article

The effects of quenching on electrical properties, and leakage behaviors of 0.67BiFeO3-0.33BaTiO3 solid solutions.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 9, p. 7311, doi. 10.1007/s10854-018-8720-1

By:

Qin, Yanfeng;
Yang, Jie;
Xiong, Pan;
Huang, Wenjuan;
Song, Jiyue;
Yin, Lihua;
Tong, Peng;
Zhu, Xuebin;
Sun, Yuping

Publication type:

Article

Electrical and interface properties of PdAl/Au metal alloyed ohmic contacts on p-type GaN for high-temperature MEMS devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 22, p. 16903, doi. 10.1007/s10854-017-7609-8

By:

Puneetha, P.;
Reddy, M.;
Lee, Young-Woong;
Jeong, Seong-Hoon;
Lokanadham, R.;
Park, Chinho;
Pradeep, A.;
Rajagopal Reddy, V.

Publication type:

Article

Experimental and simulated study of electrical behaviour of ZnO film deposited on Al substrate for device applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 7, p. 3062, doi. 10.1007/s10854-014-1984-1

By:

Pattanaik, Priyabrata;
Kamilla, Sushanta;
Das, Debi;
Mishra, Dilip

Publication type:

Article

Influence of pyrolytic temperature on the properties of ZnO films optimized for H sensing application.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 5, p. 2253, doi. 10.1007/s10854-014-1868-4

By:

Vijayalakshmi, K.;
Gopalakrishna, D.

Publication type:

Article

Effect of holding time on the dielectric properties and non-ohmic behavior of CaCuTiO capacitor-varistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 6, p. 1994, doi. 10.1007/s10854-012-1047-4

By:

Huang, Yanmin;
Shi, Danping;
Li, Yunhua;
Li, Guizhong;
Wang, Quanchao;
Liu, Laijun;
Fang, Liang

Publication type:

Article

Synthesis, structural and electrical properties of SiC nanowires via a simple CVD method.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 5, p. 1037, doi. 10.1007/s10854-011-0543-2

By:

Gu, Xiuquan;
Qiang, Yinghuai;
Zhao, Yulong

Publication type:

Article

Ti/NiCu/Ag and Al/NiCu/Ag thin film deposited on positive temperature coefficient (PTC) thermistor by direct current magnetron sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 290, doi. 10.1007/s10854-011-0407-9

By:

Cen, Jiabao;
Jin, Hao;
Wang, Demiao

Publication type:

Article

Specific contact resistance measurements of the screen-printed Ag thick film contacts in the silicon solar cells by three-point probe methodology and TLM method.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 9, p. 1248, doi. 10.1007/s10854-011-0295-z

By:

Vinod, P. N.

Publication type:

Article

Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 1, p. 9, doi. 10.1007/s10854-008-9586-4

By:

Reddy, V. Rajagopal;
Sang-Ho Kim;
Hyun-Gi Hong;
Sang-Won Yoon;
Jae-Pyoung Ahn;
Tae-Yeon Seong

Publication type:

Article

Power loss calculation as a reliable methodology to assess the ohmic losses of the planar ohmic contacts formed on the photovoltaic devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 7, p. 594, doi. 10.1007/s10854-007-9395-1

By:

Vinod, P.

Publication type:

Article

Electrical studies on sputtered CuCl thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 103, doi. 10.1007/s10854-007-9310-9

By:

Natarajan, Gomathi;
Rajendra Kumar, R. T.;
Daniels, S.;
Cameron, D. C.;
McNally, P. J.

Publication type:

Article

High temperature assessment of nitride-based devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 189, doi. 10.1007/s10854-007-9298-1

By:

Cuerdo, R.;
Pedrós, J.;
Navarro, A.;
Braña, A. F.;
Pau, J. L.;
Muñoz, E.;
Calle, F.

Publication type:

Article

Application of power loss calculation to estimate the specific contact resistance of the screen-printed silver ohmic contacts of the large area silicon solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 8, p. 805, doi. 10.1007/s10854-007-9210-z

By:

Vinod, P. N.

Publication type:

Article

Improvement of Ge/Pd/GaAs ohmic contact by In layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 6, p. 621, doi. 10.1007/s10854-007-9122-y

By:

Macháč, Petr;
Sajdl, Petr;
Machovič, Vladimír

Publication type:

Article

Study on the fabrication and photoelectrochemical performance of the F− doped Ti/Co3O4 electrodes with n-type semiconductor characteristics.

Published in:

Journal of Solid State Electrochemistry, 2019, v. 23, n. 6, p. 1767, doi. 10.1007/s10008-019-04256-y

By:

Ma, Hongchao;
Wang, Xiaoqin;
Fu, Yinghuan;
Zhang, Yanan;
Ma, Chun;
Dong, Xiaoli;
Yu, Zhihui

Publication type:

Article

Improving the contact properties of CdS-decorated TiO nanotube arrays using an electrochemical/thermal/chemical approach.

Published in:

Journal of Solid State Electrochemistry, 2016, v. 20, n. 10, p. 2713, doi. 10.1007/s10008-016-3282-8

By:

Carrera-Crespo, J.;
Rincón, Marina;
González, F.;
Barrera, E.;
González, Ignacio

Publication type:

Article

Mo/Ni and Ni/Ta-W-N/Ni thin-film contact layers for (Bi,Sb)Te-based intermediate-temperature thermoelectric elements.

Published in:

Inorganic Materials, 2016, v. 52, n. 11, p. 1132, doi. 10.1134/S0020168516110030

By:

Gromov, D.;
Shtern, Yu.;
Rogachev, M.;
Shulyat'ev, A.;
Kirilenko, E.;
Shtern, M.;
Fedorov, V.;
Mikhailova, M.

Publication type:

Article

Electrical and optical properties of TiN thin films.

Published in:

Inorganic Materials, 2014, v. 50, n. 1, p. 40, doi. 10.1134/S0020168514010178

By:

Solovan, M.;
Brus, V.;
Maistruk, E.;
Maryanchuk, P.

Publication type:

Article

动车组熔断式温度继电器性能劣化研究.

Published in:

Railway Standard Design, 2022, v. 66, n. 5, p. 152, doi. 10.13238/j.issn.1004-2954.202102090009

By:

武继将;
赵敏;
廖前华;
佘鹏鹏;
楚天罡;
杨泽锋;
魏文赋

Publication type:

Article

INVESTIGATION OF THE MAGNETIC FIELD DISTRIBUTION ON THE SURFACE OF AMF CONTACTS.

Published in:

Prace Instytutu Elektrotechniki, 2017, v. 64, n. 276, p. 7, doi. 10.5604/01.3001.0010.0034

By:

KRASUSKI, Krzysztof;
BŁAŻEJCZYK, Tomasz;
SIBILSKI, Henryk;
KOZAK, Sławomir

Publication type:

Article

Drying of Potato Tissue Pretreated by Ohmic Heating.

Published in:

Drying Technology, 2006, v. 24, n. 5, p. 601, doi. 10.1080/07373930600626677

By:

Lebovka, N. I.;
Shynkaryk, M. V.;
Vorobiev, E.

Publication type:

Article

Flexible graphite bipolar plates for vanadium redox flow batteries.

Published in:

International Journal of Energy Research, 2021, v. 45, n. 7, p. 11098, doi. 10.1002/er.6592

By:

Kim, Soowhan;
Yoon, Younghoon;
Narejo, Ghulam Mustafa;
Jung, Mina;
Kim, Ki Jae;
Kim, Young‐Jun

Publication type:

Article

The external electric‐field‐induced Schottky‐to‐ohmic contact transition in graphene/As2S3 interface: A study by the first principles.

Published in:

International Journal of Energy Research, 2021, v. 45, n. 3, p. 4727, doi. 10.1002/er.6070

By:

Liu, Xuefei;
Zhang, Zhaocai;
Lv, Bing;
Ding, Zhao;
Luo, Zijiang

Publication type:

Article

Effects of the cross‐sectional area ratios and contact resistance on the performance of a cascaded thermoelectric generator.

Published in:

International Journal of Energy Research, 2019, v. 43, n. 6, p. 2172, doi. 10.1002/er.4426

By:

Luo, Yang;
Kim, Chang Nyung

Publication type:

Article

Effects of the cross‐sectional area ratios and contact resistance on the performance of a cascaded thermoelectric generator.

Published in:

International Journal of Energy Research, 2019, v. 43, n. 6, p. 2172, doi. 10.1002/er.4426

By:

Luo, Yang;
Kim, Chang Nyung

Publication type:

Article

A Universal Method for Extracting and Quantitatively Analyzing Bias‐Dependent Contact Resistance in Carbon‐Nanotube Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201148

By:

Liu, Dexing;
Wang, Wanting;
Zhang, Jiaona;
Ren, Qinqi;
Fan, Lingchong;
Wang, Yarong;
Zhang, Yiming;
Zhang, Min

Publication type:

Article

Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors (Adv. Electron. Mater. 3/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201056

By:

Shu, Yu;
Liu, Yongqian;
Cui, Zhou;
Xiong, Rui;
Zhang, Yinggan;
Xu, Chao;
Zheng, Jingying;
Wen, Cuilian;
Wu, Bo;
Sa, Baisheng

Publication type:

Article

Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201056

By:

Shu, Yu;
Liu, Yongqian;
Cui, Zhou;
Xiong, Rui;
Zhang, Yinggan;
Xu, Chao;
Zheng, Jingying;
Wen, Cuilian;
Wu, Bo;
Sa, Baisheng

Publication type:

Article

Two‐Dimensional Tellurene Transistors with Low Contact Resistance and Self‐Aligned Catalytic Thinning Process.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200380

By:

Lin, Ziyuan;
Wang, Jingli;
Chen, Jiewei;
Wang, Cong;
Liu, Jidong;
Zhang, Wenjing;
Chai, Yang

Publication type:

Article

Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202101370

By:

Ryu, Huije;
Kim, Dong‐Hyun;
Kwon, Junyoung;
Park, Sang Kyu;
Lee, Wanggon;
Seo, Hyungtak;
Watanabe, Kenji;
Taniguchi, Takashi;
Kim, SunPhil;
van der Zande, Arend M.;
Son, Jangyup;
Lee, Gwan‐Hyoung

Publication type:

Article

Giant Negative Differential Resistance Effect Caused by Cutting off Acceptable Quantum States in Carbon Nanotube Tunneling Devices.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101314

By:

Fang, Li;
Qiu, Chenguang;
Zhang, Hongjie;
Hu, Yue;
Peng, Lian‐Mao

Publication type:

Article

Contact Resistivity in Edge‐Contacted Graphene Field Effect Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101169

By:

Lee, Sungwon;
Choi, Hyungyu;
Moon, Inyong;
Shin, Hoseong;
Watanabe, Kenji;
Taniguchi, Takashi;
Yoo, Won Jong

Publication type:

Article

High‐Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self‐Aligned Contacts.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202100954

By:

Liang, Guangda;
Wang, Yiming;
Zhang, Jiawei;
Kudrynskyi, Zakhar R.;
Kovalyuk, Zakhar;
Patanè, Amalia;
Xin, Qian;
Song, Aimin

Publication type:

Article

Suppression of Hot‐Carrier Effects Facilitated by the Multimodal Thin‐Film Transistor Architecture.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 9, p. 1, doi. 10.1002/aelm.202100533

By:

Bestelink, Eva;
de Sagazan, Olivier;
Motte, Lea;
Sporea, Radu A.

Publication type:

Article

Ternary 2D Layered Material FePSe3 and Near‐Infrared Photodetector.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 8, p. 1, doi. 10.1002/aelm.202100207

By:

Xu, Tengfei;
Luo, Man;
Shen, Niming;
Yu, Yiye;
Wang, Zhen;
Cui, Zhuangzhuang;
Qin, Jiayi;
Liang, Fang;
Chen, Yunfeng;
Zhou, Yong;
Zhong, Fang;
Peng, Meng;
Zubair, Muhammad;
Li, Ning;
Miao, Jinshui;
Lu, Wei;
Yu, Chenhui;
Hu, Weida

Publication type:

Article

Recent Advances in GaN‐Based Power HEMT Devices.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202001045

By:

He, Jiaqi;
Cheng, Wei‐Chih;
Wang, Qing;
Cheng, Kai;
Yu, Hongyu;
Chai, Yang

Publication type:

Article

Improved Threshold Switching and Endurance Characteristics Using Controlled Atomic‐Scale Switching in a 0.5 nm Thick Stoichiometric HfO2 Layer.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000869

By:

Lee, Seungwoo;
Banerjee, Writam;
Lee, Sangmin;
Sung, Changhyuck;
Hwang, Hyunsang

Publication type:

Article

Impacts of Minority Charge Carrier Injection on the Negative Capacitance, Steady‐State Current, and Transient Current of a Single‐Layer Organic Semiconductor Device.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 12, p. 1, doi. 10.1002/aelm.202000622

By:

Moon, Chang‐Ki;
Choi, Ja‐Yun;
Han, Yoonjay;
Lee, Chang‐Heon;
Kim, Jang‐Joo

Publication type:

Article

Prospects of Terahertz Transistors with the Topological Semimetal Cadmium Arsenide.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 10, p. 1, doi. 10.1002/aelm.202000676

By:

Shoron, Omor F.;
Goyal, Manik;
Guo, Binghao;
Kealhofer, David A.;
Schumann, Timo;
Stemmer, Susanne

Publication type:

Article