Works about NONVOLATILE random-access memory

Results: 472

Resistive Random Access Memory Cells with a Bilayer TiO2/SiO X Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 33, p. n/a, doi. 10.1002/adfm.201700384

By:

Xiao, Na;
Villena, Marco A.;
Yuan, Bin;
Chen, Shaochuan;
Wang, Bingru;
Eliáš, Marek;
Shi, Yuanyuan;
Hui, Fei;
Jing, Xu;
Scheuermann, Andrew;
Tang, Kechao;
McIntyre, Paul C.;
Lanza, Mario

Publication type:

Article

Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfO x based Memristive Devices.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 32, p. n/a, doi. 10.1002/adfm.201700432

By:

Sharath, Sankaramangalam Ulhas;
Vogel, Stefan;
Molina‐Luna, Leopoldo;
Hildebrandt, Erwin;
Wenger, Christian;
Kurian, Jose;
Duerrschnabel, Michael;
Niermann, Tore;
Niu, Gang;
Calka, Pauline;
Lehmann, Michael;
Kleebe, Hans‐Joachim;
Schroeder, Thomas;
Alff, Lambert

Publication type:

Article

One-Step All-Solution-Based Au-GO Core-Shell Nanosphere Active Layers in Nonvolatile ReRAM Devices.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 10, p. n/a, doi. 10.1002/adfm.201604604

By:

Rani, Adila;
Velusamy, Dhinesh Babu;
Marques Mota, Filipe;
Jang, Yoon Hee;
Kim, Richard Hahnkee;
Park, Cheolmin;
Kim, Dong Ha

Publication type:

Article

Liquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 12, p. 2016, doi. 10.1002/adfm.201504187

By:

Hao, Chunxue;
Wen, Fusheng;
Xiang, Jianyong;
Yuan, Shijun;
Yang, Bingchao;
Li, Lei;
Wang, Wenhong;
Zeng, Zhongming;
Wang, Limin;
Liu, Zhongyuan;
Tian, Yongjun

Publication type:

Article

Role and Optimization of the Active Oxide Layer in TiO2-Based RRAM.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 4, p. 507, doi. 10.1002/adfm.201503522

By:

Regoutz, Anna;
Gupta, Isha;
Serb, Alexantrou;
Khiat, Ali;
Borgatti, Francesco;
Lee, Tien‐Lin;
Schlueter, Christoph;
Torelli, Piero;
Gobaut, Benoit;
Light, Mark;
Carta, Daniela;
Pearce, Stuart;
Panaccione, Giancarlo;
Prodromakis, Themistoklis

Publication type:

Article

Direct Observation of Conducting Nanofilaments in Graphene-Oxide-Resistive Switching Memory.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 43, p. 6710, doi. 10.1002/adfm.201502734

By:

Kim, Sung Kyu;
Kim, Jong Yoon;
Choi, Sung‐Yool;
Lee, Jeong Yong;
Jeong, Hu Young

Publication type:

Article

Masthead: (Adv. Funct. Mater. 40/2015).

Published in:: Advanced Functional Materials, 2015, v. 25, n. 40, p. n/a, doi. 10.1002/adfm.201570128
Publication type:: Article

Biocompatible and Flexible Chitosan-Based Resistive Switching Memory with Magnesium Electrodes.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 35, p. 5586, doi. 10.1002/adfm.201502592

By:

Hosseini, Niloufar Raeis;
Lee, Jang‐Sik

Publication type:

Article

Electrically Driven Random Laser Memory.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 26, p. 4058, doi. 10.1002/adfm.201500734

By:

Wang, Cih-Su;
Nieh, Chuan-Hsien;
Chen, Yang-Fang;
Lin, Tai-Yuan

Publication type:

Article

Silicon-Based Current-Controlled Reconfigurable Magnetoresistance Logic Combined with Non-Volatile Memory.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 1, p. 158, doi. 10.1002/adfm.201402955

By:

Luo, Zhaochu;
Zhang, Xiaozhong;
Xiong, Chengyue;
Chen, Jiaojiao

Publication type:

Article

Memory Switching: Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology (Adv. Funct. Mater. 36/2014).

Published in:

Advanced Functional Materials, 2014, v. 24, n. 36, p. 5772, doi. 10.1002/adfm.201470243

By:

Sun, Haitao;
Liu, Qi;
Li, Congfei;
Long, Shibing;
Lv, Hangbing;
Bi, Chong;
Huo, Zongliang;
Li, Ling;
Liu, Ming

Publication type:

Article

Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 32, p. 5086, doi. 10.1002/adfm.201400064

By:

Yoon, Jung Ho;
Song, Seul Ji;
Yoo, Il‐Hyuk;
Seok, Jun Yeong;
Yoon, Kyung Jean;
Kwon, Dae Eun;
Park, Tae Hyung;
Hwang, Cheol Seong

Publication type:

Article

Structural, dielectric, and magnetic responses in Doped ZnO magnetic nanoparticles for spintronics.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 3, p. 1, doi. 10.1007/s10854-022-09711-7

By:

Khan, Rajwali;
Al Otaibi, Sattam;
Babqi, Abdulrahman J.;
Rahman, Nasir;
sohail, Mohammad;
Yusupov, Rabbim Mixlievich;
Abdullaev, Sherzod Shukhratovich;
Khan, Alamzeb;
Iqbal, Shahid;
Del Rosso, Tommaso;
Tahir;
Zaman, Quaid;
Khan, Aurangzeb

Publication type:

Article

Evidence for negative differential resistance and switchable diode effect in multiferroic BiFe0.95Sc0.05O3-based resistive random access memory under doping engineering.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 19, p. 15848, doi. 10.1007/s10854-022-08485-2

By:

Mohanty, Himadri Nandan;
Mishra, S.

Publication type:

Article

Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 8, p. 10809, doi. 10.1007/s10854-021-05739-3

By:

Wang, Aoqiu;
Zhang, Jiakui;
Zha, Gangqiang;
Xu, Lingyan;
Jie, Wanqi

Publication type:

Article

Optical and resistive switching properties of Chitosan-aluminum-doped zinc oxide composite thin films for transparent resistive random access memory application.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 3, p. 3556, doi. 10.1007/s10854-020-05102-y

By:

Vallabhapurapu, Sreedevi;
Sangani, L. D. Varma;
Krishna, M. Ghanashyam;
Das, J.;
Srinivasan, A.;
Srinivasu, V. V.

Publication type:

Article

Effects of swift heavy ion irradiation on the performance of HfO2-based resistive random access memory devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 3, p. 2973, doi. 10.1007/s10854-020-05049-0

By:

Arun, N.;
Sangani, L. D. Varma;
Vinod Kumar, K.;
Mangababu, A.;
Krishna, M. Ghanashyam;
Pathak, A. P.;
Nageswara Rao, S. V. S.

Publication type:

Article

Improved resistive switching performance of graphene oxide-based flexible ReRAM with HfOx buffer layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 3, p. 2936, doi. 10.1007/s10854-020-05045-4

By:

Maji, S.;
Paul, A. D.;
Das, P.;
Chatterjee, S.;
Chatterjee, P.;
Dhanak, V. R.;
Chakraborty, A. K.;
Mahapatra, R.

Publication type:

Article

Aminobenzene stabilized bismuth halide nanoparticles with O-shaped hysteresis behaviour.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 24, p. 22652, doi. 10.1007/s10854-020-04777-7

By:

Perla, Venkata K;
Ghosh, Sarit K;
Mallick, Kaushik

Publication type:

Article

Electrochromic and bipolar memory switching properties of novel Eu(III)-polymer of multidentate Schiff's base ligand.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 22, p. 20345, doi. 10.1007/s10854-020-04554-6

By:

Oberoi, Deepa;
Shankar, Uday;
Dagar, Parveen;
Sahu, Satyajit;
Bandyopadhyay, Anasuya

Publication type:

Article

Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 2, p. 903, doi. 10.1007/s10854-019-02598-x

By:

Abbas, Yawar;
Han, In Sub;
Sokolov, Andrey Sergeevich;
Jeon, Yu-Rim;
Choi, Changhwan

Publication type:

Article

Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 14, p. 13445, doi. 10.1007/s10854-019-01712-3

By:

Tan, Tingting;
Du, Yihang;
Sun, Yaling;
Zhang, Hua;
Cao, Ai;
Zha, Gangqiang

Publication type:

Article

Improved resistive switching characteristics of atomic layer deposited Al2O3/La2O3/Al2O3 multi-stacked films with Al+ implantation.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 13, p. 12577, doi. 10.1007/s10854-019-01618-0

By:

Wang, Xing;
Liu, Hongxia;
Zhao, Lu;
Wang, Yongte;
Wang, Shulong

Publication type:

Article

Resistive switching properties of HfZrO thin films for flexible memory applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 14, p. 10625, doi. 10.1007/s10854-017-6837-2

By:

Wu, Zhipeng;
Zhu, Jun;
Liu, Xingpeng

Publication type:

Article

Relaxation and conduction mechanism of Dy substituted SrBiTaO ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 5, p. 4760, doi. 10.1007/s10854-016-4356-1

By:

Senthil, V.;
Badapanda, T.;
Chandra Bose, A.;
Panigrahi, S.

Publication type:

Article

Efficient compute node-local replication mechanisms for NVRAM-centric data structures.

Published in:

VLDB Journal International Journal on Very Large Data Bases, 2020, v. 29, n. 2/3, p. 775, doi. 10.1007/s00778-019-00549-w

By:

Zarubin, Mikhail;
Kissinger, Thomas;
Habich, Dirk;
Willhalm, Thomas;
Lehner, Wolfgang

Publication type:

Article

Temperature Effects on a Non-Volatile Memory Device with Ferroelectric Capacitor.

Published in:

Integrated Ferroelectrics, 2014, v. 157, n. 1, p. 23, doi. 10.1080/10584587.2014.911615

By:

John, Caroline S.;
Macleod, Todd C.;
Evans, Joe;
Ho, Fat D.

Publication type:

Article

Retention Analysis of a Non-Volatile Ferroelectric Memory Device.

Published in:

Integrated Ferroelectrics, 2013, v. 140, n. 1, p. 23, doi. 10.1080/10584587.2012.741383

By:

John, Caroline S.;
Macleod, Todd C.;
Evans, Joe;
HO, Fat D.

Publication type:

Article

Study of the Resistive Switching Characteristics and Mechanisms of Pt/CeOx/TiN Structure for RRAM Applications.

Published in:

Integrated Ferroelectrics, 2013, v. 140, n. 1, p. 16, doi. 10.1080/10584587.2012.741372

By:

Zhou, Qigang;
Zhai, Jiwei

Publication type:

Article

Circuit Implementation, Operation, and Simulation of Multivalued Nonvolatile Static Random Access Memory Using a Resistivity Change Device.

Published in:

Active & Passive Electronic Components, 2013, p. 1, doi. 10.1155/2013/839198

By:

Kazuya Nakayama;
Akio Kitagawa

Publication type:

Article

Novel Power Reduction Technique for ReRAM with Automatic Avoidance Circuit for Wasteful Overwrite.

Published in:

Active & Passive Electronic Components, 2012, p. 1, doi. 10.1155/2012/181395

By:

Takaya Handa;
Yuhei Yoshimoto;
Kazuya Nakayama;
Akio Kitagawa

Publication type:

Article

X-ray radiation induced effects in selected chalcogenide glasses and CBRAM devices based on them.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 6, p. 1060, doi. 10.1002/pssb.201552562

By:

Mitkova, Maria;
Wolf, Kasandra;
Belev, George;
Ailavajhala, Mahesh;
Tenne, Dmitri A.;
Barnaby, Hugh;
Kozicki, Michael N.

Publication type:

Article

Synthesis, Characterization, and Memory Performance of Two Phenazine/Triphenylamine-Based Organic Small Molecules through Donor-Acceptor Design.

Published in:

Asian Journal of Organic Chemistry, 2015, v. 4, n. 7, p. 646, doi. 10.1002/ajoc.201500087

By:

Wang, Chengyuan;
Yamashita, Masataka;
Hu, Benlin;
Zhou, Yi;
Wang, Jiangxin;
Wu, Jin;
Huo, Fengwei;
Lee, Pooi See;
Aratani, Naoki;
Yamada, Hiroko;
Zhang, Qichun

Publication type:

Article

An analytical approach to engineer multistability in the oscillatory response of a pulse-driven ReRAM.

Published in:

Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-55255-7

By:

Ascoli, Alon;
Schmitt, Nicolas;
Messaris, Ioannis;
Demirkol, Ahmet Samil;
Strachan, John Paul;
Tetzlaff, Ronald;
Chua, Leon

Publication type:

Article

Material to system-level benchmarking of CMOS-integrated RRAM with ultra-fast switching for low power on-chip learning.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-42214-x

By:

Abedin, Minhaz;
Gong, Nanbo;
Beckmann, Karsten;
Liehr, Maximilian;
Saraf, Iqbal;
Van der Straten, Oscar;
Ando, Takashi;
Cady, Nathaniel

Publication type:

Article

Material to system-level benchmarking of CMOS-integrated RRAM with ultra-fast switching for low power on-chip learning.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-42214-x

By:

Abedin, Minhaz;
Gong, Nanbo;
Beckmann, Karsten;
Liehr, Maximilian;
Saraf, Iqbal;
Van der Straten, Oscar;
Ando, Takashi;
Cady, Nathaniel

Publication type:

Article

Design of unbalanced 9:2 ternary encoder and 2:9 ternary decoder circuits in resistive random access memory and carbon nanotube field effect transistor technology.

Published in:

International Journal of Circuit Theory & Applications, 2024, v. 52, n. 10, p. 5403, doi. 10.1002/cta.4022

By:

Khurshid, Tabassum;
Singh, Vikram

Publication type:

Article

Practical demonstration of a RRAM memory fuse.

Published in:

International Journal of Circuit Theory & Applications, 2021, v. 49, n. 8, p. 2363, doi. 10.1002/cta.3010

By:

Serb, Alexander;
Khiat, Ali;
Prodromakis, Themis

Publication type:

Article

P‐channel logic 2 T eDRAM macro with high retention bit architecture.

Published in:

International Journal of Circuit Theory & Applications, 2018, v. 46, n. 7, p. 1416, doi. 10.1002/cta.2496

By:

Manisankar, Sivasundar;
Chung, Yeonbae

Publication type:

Article

Memristive tonotopic mapping with volatile resistive switching memory devices.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-47228-1

By:

Milozzi, Alessandro;
Ricci, Saverio;
Ielmini, Daniele

Publication type:

Article

Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory.

Published in:

Advances in Condensed Matter Physics, 2018, p. 1, doi. 10.1155/2018/2028491

By:

Tikhov, Stanislav;
Gorshkov, Oleg;
Antonov, Ivan;
Morozov, Alexander;
Koryazhkina, Maria;
Filatov, Dmitry

Publication type:

Article

In-Memory Computing Using Dot-Product via Multi-Bit QD-NVRAMs.

Published in:

International Journal of High Speed Electronics & Systems, 2024, v. 33, n. 2/3, p. 1, doi. 10.1142/S012915642440055X

By:

Gudlavalleti, R. H.;
Chandy, J.;
Heller, E.;
Jain, F.

Publication type:

Article

Novel Multi-State QDC-QDG FETs and Gate All Around (GAA) FETs for Integrated Logic and QD-NVRAMs.

Published in:

International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S012915642350026X

By:

Jain, F.;
Gudlavalleti, R. H.;
Chandy, J.;
Heller, E.

Publication type:

Article

Enhancing Number of Bits Via Mini-Energy Band Transitions Using Si Quantum Dot Channel (QDC) and Ge Quantum Dot Gate (QDG) FETs and NVRAMs.

Published in:

International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S0129156423500180

By:

Jain, F.;
Gudlavalleti, R. H.;
Almalki, A.;
Saman, B.;
Chan, P-Y.;
Chandy, J.;
Papadimitrakopoulos, F.;
Heller, E.

Publication type:

Article

Fabrication of Multi-Bit SRAMs Using Quantum Dot Channel (QDC)-Quantum Dot Gate (QDG) FET.

Published in:

International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S0129156423500179

By:

Gudlavalleti, Raja Hari;
Goosen, Jacques;
Liu, Tao;
Bradley, Hunter;
Parent, Elisa;
Almalki, Abdulmajeed;
Perez, Erik;
Jain, Faquir

Publication type:

Article

Multi-Bit SRAMs, Registers, and Logic Using Quantum Well Channel SWS-FETs for Low-Power, High-Speed Computing.

Published in:

International Journal of High Speed Electronics & Systems, 2019, v. 38, n. 3/4, p. N.PAG, doi. 10.1142/S012915641940024X

By:

Jain, F.;
Saman, B.;
Gudlavalleti, R. H.;
Mays, R.;
Chandy, J.;
Heller, E.

Publication type:

Article

Integration of Quantum Dot Gate (QDG) in SWS-FETs for Multi-Bit Logic and QD-NVRAMs for Distributed In-Memory Computing.

Published in:

International Journal of High Speed Electronics & Systems, 2019, v. 38, n. 3/4, p. N.PAG, doi. 10.1142/S0129156419400184

By:

Jain, F.;
Gudlavalleti, R. H.;
Mays, R.;
Saman, B.;
Chan, P-Y.;
Chandy, J.;
Lingalugari, M.;
Heller, E.

Publication type:

Article

Author Index: Volume 27 (2018).

Published in:: International Journal of High Speed Electronics & Systems, 2018, v. 27, n. 3/4, p. N.PAG, doi. 10.1142/S012915641899001X
Publication type:: Article

Quantum Dot Floating Gate Nonvolatile Random Access Memory Using Ge Quantum Dot Channel for Faster Erasing.

Published in:

International Journal of High Speed Electronics & Systems, 2018, v. 27, n. 1/2, p. N.PAG, doi. 10.1142/S0129156418400062

By:

Lingalugari, Murali;
Heller, Evan;
Parthasarathy, Barath;
Chandy, John;
Jain, Faquir

Publication type:

Article

Advances in RRAM Technology: Identifying and Mitigating Roadblocks.

Published in:

International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 1/2, p. -1, doi. 10.1142/S0129156416400061

By:

Veksler, D.;
Bersuker, G.

Publication type:

Article