Works matching DE "NONVOLATILE random-access memory"

Results: 476

针对忆阻神经网络加速器的混合粒度剪枝方法研究.

Published in:

Journal of Guangdong University of Technology, 2025, v. 42, n. 3, p. 123, doi. 10.12052/gdutxb.240011

By:

周博;
陈辉

Publication type:

Article

Structural, Morphological, Compositional and Electrical Properties of Er3+ Substituted Bismuth Layered Perovskite Sr0.8Bi2.2−xErxNb2O9 Compounds.

Published in:

Integrated Ferroelectrics, 2025, v. 241, n. 1-3, p. 101, doi. 10.1080/10584587.2025.2482415

By:

Tomar, Amit;
Arya, Sandeep

Publication type:

Article

Organic Nonvolatile Resistive Switching Memory Based on Molecularly Entrapped Fullerene Derivative within a Diblock Copolymer Nanostructure.

Published in:

Macromolecular Rapid Communications, 2013, v. 34, n. 4, p. 355, doi. 10.1002/marc.201200614

By:

Ko, Jieun;
Lim, Jung Ah;
Kim, Youn Sang;
Jo, Hanju;
Chang, Hye Jung

Publication type:

Article

Boron(III)-Containing Donor-Acceptor Compound with Goldlike Reflective Behavior for Organic Resistive Memory Devices.

Published in:

Angewandte Chemie, 2016, v. 128, n. 11, p. 3711, doi. 10.1002/ange.201510946

By:

Poon, Chun‐Ting;
Wu, Di;
Yam, Vivian Wing‐Wah

Publication type:

Article

Storage of Electrical Information in Metal-Organic-Framework Memristors.

Published in:

Angewandte Chemie, 2014, v. 126, n. 17, p. 4526, doi. 10.1002/ange.201309642

By:

Yoon, Seok Min;
Warren, Scott C.;
Grzybowski, Bartosz A.

Publication type:

Article

Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 14, p. 13445, doi. 10.1007/s10854-019-01712-3

By:

Tan, Tingting;
Du, Yihang;
Sun, Yaling;
Zhang, Hua;
Cao, Ai;
Zha, Gangqiang

Publication type:

Article

Improved resistive switching characteristics of atomic layer deposited Al2O3/La2O3/Al2O3 multi-stacked films with Al+ implantation.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 13, p. 12577, doi. 10.1007/s10854-019-01618-0

By:

Wang, Xing;
Liu, Hongxia;
Zhao, Lu;
Wang, Yongte;
Wang, Shulong

Publication type:

Article

Resistive switching properties of HfZrO thin films for flexible memory applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 14, p. 10625, doi. 10.1007/s10854-017-6837-2

By:

Wu, Zhipeng;
Zhu, Jun;
Liu, Xingpeng

Publication type:

Article

Relaxation and conduction mechanism of Dy substituted SrBiTaO ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 5, p. 4760, doi. 10.1007/s10854-016-4356-1

By:

Senthil, V.;
Badapanda, T.;
Chandra Bose, A.;
Panigrahi, S.

Publication type:

Article

Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM)

Published in:

Journal of Solid State Electrochemistry, 2013, v. 17, n. 12, p. 3137, doi. 10.1007/s10008-013-2200-6

By:

Yoshitake, Michiko;
Vaclavu, Michal;
Chundak, Mykhailo;
Matolin, Vladimir;
Chikyow, Toyohiro

Publication type:

Article

Realization of Artificial Nerve Synapses Based on Biological Threshold Resistive Random Access Memory.

Published in:

Advanced Biology, 2023, v. 7, n. 6, p. 1, doi. 10.1002/adbi.202200298

By:

Wang, Lu;
Zuo, Ze;
Wen, Dianzhong

Publication type:

Article

GripAble: An accurate, sensitive and robust digital device for measuring grip strength.

Published in:

Journal of Rehabilitation & Assistive Technologies Engineering, 2022, v. 9, p. 1, doi. 10.1177/20556683221078455

By:

Mace, Michael;
Mutalib, Sharah Abdul;
Ogrinc, Matjaz;
Goldsmith, Nicola;
Burdet, Etienne

Publication type:

Article

HIGH TEMPERATURE (500 °C) GAN BASED THRESHOLD SWITCHING SELECTORS FOR MEMORY APPLICATIONS IN HARSH ENVIRONMENTS.

Published in:

LPI Contribution, 2019, p. 1

By:

H. Fu;
K. Fu;
Hatch, K.;
Nemanich, R.;
Y. Zhao

Publication type:

Article

Fabrication of a Hole‐Type Vertical Resistive‐Switching Random‐Access Array and Intercell Interference Induced by Lateral Charge Spreading.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200998

By:

Kim, Seung Soo;
Yong, Soo Kyeom;
Kim, Jihun;
Choi, Jin Myung;
Park, Tae Won;
Kim, Hyun Young;
Kim, Hae Jin;
Hwang, Cheol Seong

Publication type:

Article

Optoelectronic Resistive Memory Based on Lead‐Free Cs2AgBiBr6 Double Perovskite for Artificial Self‐Storage Visual Sensors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200657

By:

Ye, Haibo;
Liu, Zhiyong;
Sun, Bo;
Zhang, Xuning;
Shi, Tielin;
Liao, Guanglan

Publication type:

Article

Nonvolatile Electrochemical Random‐Access Memory under Short Circuit.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200958

By:

Kim, Diana S.;
Watkins, Virgil J.;
Cline, Laszlo A.;
Li, Jingxian;
Sun, Kai;
Sugar, Joshua D.;
Fuller, Elliot J.;
Talin, A. Alec;
Li, Yiyang

Publication type:

Article

Stacked One‐Selector‐One‐Resistive Memory Crossbar Array With High Nonlinearity and On‐Current Density for the Neuromorphic Applications.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200656

By:

Woo, Hyo Cheon;
Kim, Jihun;
Lee, Sunwoo;
Kim, Hae Jin;
Hwang, Cheol Seong

Publication type:

Article

Forming‐Free, Self‐Compliance, Bipolar Multi‐Level Resistive Switching in WO3–x Based MIM Device.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200250

By:

Rudrapal, Krishna;
Bhattacharya, Gourab;
Adyam, Venimadhav;
Roy Chaudhuri, Ayan

Publication type:

Article

Resistive Random Access Memory Behaviors in Organic–Inorganic Hybrid Ultra‐Thin Films.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200432

By:

Kim, Min Ju;
Martinez, Alba;
Jeong, Jaejoong;
Kim, Seongho;
Hwang, Wan Sik;
Cho, Byung Jin

Publication type:

Article

Highly Flexible and Asymmetric Hexagonal‐Shaped Crystalline Structured Germanium Dioxide‐Based Multistate Resistive Switching Memory Device for Data Storage and Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200332

By:

Chougale, Mahesh Y.;
Khan, Muhammad Umair;
Kim, Jungmin;
Furqan, Chaudhry Muhammad;
Saqib, Qazi Muhammad;
Shaukat, Rayyan Ali;
Patil, Swapnil R.;
Mohammad, Baker;
Kwok, Hoi‐Sing;
Bae, Jinho

Publication type:

Article

2D Heterostructure of Bi2O2Se/Bi2SeOx Nanosheet for Resistive Random Access Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200126

By:

Xia, Yan;
Wang, Jing;
Chen, Rui;
Wang, Hongbo;
Xu, Hang;
Jiang, Changzhong;
Li, Wenqing;
Xiao, Xiangheng

Publication type:

Article

A Low Power‐consumption and Transient Nonvolatile Memory Based on Highly Dense All‐Inorganic Perovskite Films.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101412

By:

Abbas, Ghulam;
Hassan, Muhammad;
Khan, Qasim;
Wang, Haifei;
Zhou, Guigang;
Zubair, Muhammad;
Xu, Xiuru;
Peng, Zhengchun

Publication type:

Article

An Optically, Electrically, Magnetically Controllable Dual‐Gate Phototransistor.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101378

By:

Tsai, Chia‐Lin;
Hsu, Fang‐Chi;
Lin, Jia‐Yu;
Chao, Yu‐Chieh;
Chen, Yang‐Fang

Publication type:

Article

Rainer Waser – A Pioneer of Fundamentals of Resistive Switching Memories.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202200765

By:

Valov, Ilia;
Hasegawa, Tsuyoshi;
Strukov, Dmitri

Publication type:

Article

Low‐Frequency‐Noise Spectroscopy of TaOx‐based Resistive Switching Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100758

By:

Sugawara, Kota;
Shima, Hisashi;
Takahashi, Makoto;
Naitoh, Yasuhisa;
Suga, Hiroshi;
Akinaga, Hiroyuki

Publication type:

Article

A Bifunctional Memristor Enables Multiple Neuromorphic Computing Applications.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101235

By:

Lyapunov, Nikolay;
Zheng, Xiao Dong;
Yang, Kevin;
Liu, Hao Min;
Zhou, Kai;
Cai, Song Hua;
Ho, Tsz Lung;
Suen, Chun Hung;
Yang, Ming;
Zhao, Jiong;
Zhou, Xiaoyuan;
Dai, Ji‐Yan

Publication type:

Article

Effect of the Oxygen Composition Control of HfOx Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101257

By:

Lee, Seungwoo;
Kim, Seong Hun;
Oh, Seungyeol;
Lee, Donghwa;
Hwang, Hyunsang

Publication type:

Article

Influence of Nanoscale Charge Trapping Layer on the Memory and Synaptic Characteristics of a Novel Rubidium Lead Chloride Quantum Dot Based Memristor.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101015

By:

Das, Ujjal;
Sarkar, Pranab Kumar;
Das, Dip;
Paul, Bappi;
Roy, Asim

Publication type:

Article

Depth Gradient Reduced Graphene Oxide Layer via Intense Pulsed Light Annealing Process for the Flexible Resistive Random Access Memory Device.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202101018

By:

Park, Jong‐Whi;
Moon, Chang‐Jin;
Ju, Young‐Min;
Jang, Yong‐Rae;
Park, Simon S.;
Kim, Hak‐Sung

Publication type:

Article

Low‐Operating‐Voltage Resistive Switching Memory Based on the Interlayer‐Spacing Regulation of MoSe2.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100905

By:

Jian, Jiaying;
Feng, Hao;
Dong, Pengfan;
Chang, Honglong;
Vena, Arnaud;
Brice, Sorli

Publication type:

Article

Large Resistive Switching and Artificial Synaptic Behaviors in Layered Cs3Sb2I9 Lead‐Free Perovskite Memory Devices.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100237

By:

Paramanik, Subham;
Maiti, Abhishek;
Chatterjee, Soumyo;
Pal, Amlan J.

Publication type:

Article

Application of Resistive Random Access Memory in Hardware Security: A Review.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 12, p. 1, doi. 10.1002/aelm.202100536

By:

Rajendran, Gokulnath;
Banerjee, Writam;
Chattopadhyay, Anupam;
Aly, Mohamed M. Sabry

Publication type:

Article

Transient and Biocompatible Resistive Switching Memory Based on Electrochemically‐Deposited Zinc Oxide.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 12, p. 1, doi. 10.1002/aelm.202100322

By:

Xue, Qi;
Hang, Tao;
Gong, Zheng;
Chen, Linfeng;
Liang, Jianghu;
Sun, Yu;
Lu, Di;
Zhang, Xiaonong;
Chen, Chun‐Chao;
Li, Ming

Publication type:

Article

In Memory Energy Application for Resistive Random Access Memory.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 12, p. 1, doi. 10.1002/aelm.202100297

By:

Trotti, Paola;
Oukassi, Sami;
Molas, Gabriel;
Bernard, Mathieu;
Aussenac, François;
Pillonnet, Gaël

Publication type:

Article

Copolymer‐Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process (Adv. Electron. Mater. 10/2021).

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 10, p. 1, doi. 10.1002/aelm.202170048

By:

Jeong, Jaejoong;
Kim, Min Ju;
Hwang, Wan Sik;
Cho, Byung Jin

Publication type:

Article

Copolymer‐Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 10, p. 1, doi. 10.1002/aelm.202100375

By:

Jeong, Jaejoong;
Kim, Min Ju;
Hwang, Wan Sik;
Cho, Byung Jin

Publication type:

Article

Multifunctional Optoelectronic Random Access Memory Device Based on Surface‐Plasma‐Treated Inorganic Halide Perovskite.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100366

By:

Liu, Qi;
Yue, Wenjing;
Li, Yang;
Wang, Wenxiao;
Xu, Lei;
Wang, Yaqi;
Gao, Song;
Zhang, Chunwei;
Kan, Hao;
Li, Chao

Publication type:

Article

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202000252

By:

Shih, Yu‐Chuan;
Lee, Ling;
Liang, Kai‐De;
Manikandan, Arumugam;
Liu, Wen‐Wu;
Chen, Yu‐Ze;
Chang, Mu‐Tung;
Wang, Zhiming M.;
Chueh, Yu‐Lun

Publication type:

Article

Organic RAM: Study of Electronic and Steric Effects of Different Substituents in Donor–Acceptor Molecules on Multilevel Organic Memory Data Storage Performance (Adv. Electron. Mater. 4/2021).

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202170010

By:

Han, Jinba;
Lian, Hong;
Cheng, Xiaozhe;
Dong, Qingchen;
Qu, Yongquan;
Wong, Wai‐Yeung

Publication type:

Article

An Efficient Approach Based on Tuned Nanoionics to Maximize Memory Characteristics in Ag‐Based Devices.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202100022

By:

Banerjee, Writam;
Kim, Seong Hun;
Lee, Seungwoo;
Lee, Donghwa;
Hwang, Hyunsang

Publication type:

Article

Homogeneous 3D Vertical Integration of Parylene‐C Based Organic Flexible Resistive Memory on Standard CMOS Platform.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000864

By:

Chen, Qingyu;
Wang, Zongwei;
Lin, Min;
Qi, Xin;
Yu, Zhizhen;
Wu, Lindong;
Bao, Lin;
Ling, Yaotian;
Qin, Yabo;
Cai, Yimao;
Huang, Ru

Publication type:

Article

Understanding of Selector‐Less 1S1R Type Cu‐Based CBRAM Devices by Controlling Sub‐Quantum Filament.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 9, p. 1, doi. 10.1002/aelm.202000488

By:

Banerjee, Writam;
Hwang, Hyunsang

Publication type:

Article

Universal Memory Characteristics and Degradation Features of ZrO2‐Based Bipolar Resistive Memory.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000368

By:

Hur, Ji‐Hyun;
Lee, Dongsoo

Publication type:

Article

In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000209

By:

Maikap, Siddheswar;
Banerjee, Writam

Publication type:

Article

Cross‐Point Arrays with Low‐Power ITO‐HfO2 Resistive Memory Cells Integrated on Vertical III‐V Nanowires.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000154

By:

Persson, Karl‐Magnus;
Ram, Mamidala Saketh;
Kilpi, Olli‐Pekka;
Borg, Mattias;
Wernersson, Lars‐Erik

Publication type:

Article

Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000066

By:

Huang, Wei‐Chen;
Zheng, Hao‐Xuan;
Chen, Po‐Hsun;
Chang, Ting‐Chang;
Tan, Yung‐Fang;
Lin, Shih‐Kai;
Zhang, Yong‐Ci;
Jin, Fu‐Yuan;
Wu, Chung‐Wei;
Yeh, Yu‐Hsuan;
Chou, Sheng‐Yao;
Huang, Hui‐Chun;
Chen, Yan‐Wen;
Sze, Simon M.

Publication type:

Article

Conduction Response in Highly Flexible Nonvolatile Memory Devices.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000151

By:

Ren, Shuxia;
Li, Zhenhua;
Tang, Lingzhi;
Su, Xiao;
Zhang, He;
Zhang, Guanglei;
Zhang, Han;
Cao, Guozhong;
Zhao, Jinjin

Publication type:

Article

A Self‐Terminated Operation Scheme for High‐Parallel and Energy‐Efficient Forming of RRAM Array.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901324

By:

Feng, Yulin;
Huang, Peng;
Zhang, Yizhou;
Shen, Wensheng;
Xu, Weijie;
Xiang, Yachen;
Ding, Xiangxiang;
Zhao, Yudi;
Gao, Bin;
Wu, Huaqiang;
Qian, He;
Liu, Lifeng;
Liu, Xiaoyan;
Kang, Jinfeng

Publication type:

Article

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices.

Published in:: Advanced Electronic Materials, 2020, v. 6, n. 3, p. 1, doi. 10.1002/aelm.202000098
Publication type:: Article

Energy‐Efficient Ultrafast SOT‐MRAMs Based on Low‐Resistivity Spin Hall Metal Au0.25Pt0.75.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901131

By:

Zhu, Lijun;
Zhu, Lujun;
Shi, Shengjie;
Ralph, Daniel C.;
Buhrman, Robert A.

Publication type:

Article