Found: 434
Select item for more details and to access through your institution.
Development of a novel self-healing Zn(II)-metallohydrogel with wide bandgap semiconducting properties for non-volatile memory device application.
- Published in:
- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-61870-1
- By:
- Publication type:
- Article
Dielectric Properties and Carrier Transport Mechanism in Annealed HfO<sub>x</sub>‐Based Resistive Random Access Memory Devices.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 10, p. 1, doi. 10.1002/pssa.202300937
- By:
- Publication type:
- Article
SiN<sub>x</sub>‐Based Digital–Analog Hybrid Resistive Random Access Memory via Heterogeneous Integration.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 10, p. 1, doi. 10.1002/pssa.202300964
- By:
- Publication type:
- Article
One‐Dimensional Covalent Organic Framework‐Based Multilevel Memristors for Neuromorphic Computing.
- Published in:
- Angewandte Chemie, 2024, v. 136, n. 20, p. 1, doi. 10.1002/ange.202402911
- By:
- Publication type:
- Article
Lifetime Improvement of 28 nm Resistive Random Access Memory Chip by Machine Learning‐Assisted Prediction Model Collaborated with Resurrection Algorithm.
- Published in:
- Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300504
- By:
- Publication type:
- Article
I–V Characteristics of Hf0.5Zr0.5O2 films prepared via sol–gel and pulsed laser deposition methods.
- Published in:
- Functional Materials Letters, 2024, v. 17, n. 4, p. 1, doi. 10.1142/S1793604724500115
- By:
- Publication type:
- Article
Enhancing the Uniformity of a Memristor Using a Bilayer Dielectric Structure.
- Published in:
- Micromachines, 2024, v. 15, n. 5, p. 605, doi. 10.3390/mi15050605
- By:
- Publication type:
- Article
Highly Nonlinear Memory Selectors with Ultrathin MoS<sub>2</sub>/WSe<sub>2</sub>/MoS<sub>2</sub> Heterojunction.
- Published in:
- Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202304242
- By:
- Publication type:
- Article
Unidirectional Neuromorphic Resistive Memory Integrated with Piezoelectric Nanogenerator for Self‐Power Electronics.
- Published in:
- Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202305869
- By:
- Publication type:
- Article
Materials for Memristors.
- Published in:
- Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202314512
- By:
- Publication type:
- Article
Multibit, Lead‐Free Cs<sub>2</sub>SnI<sub>6</sub> Resistive Random Access Memory with Self‐Compliance for Improved Accuracy in Binary Neural Network Application.
- Published in:
- Advanced Functional Materials, 2024, v. 34, n. 16, p. 1, doi. 10.1002/adfm.202310780
- By:
- Publication type:
- Article
Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO 2 /ZrO 2 /Pt.
- Published in:
- Materials (1996-1944), 2024, v. 17, n. 8, p. 1852, doi. 10.3390/ma17081852
- By:
- Publication type:
- Article
A DfT Strategy for Guaranteeing ReRAM's Quality after Manufacturing.
- Published in:
- Journal of Electronic Testing, 2024, v. 40, n. 2, p. 245, doi. 10.1007/s10836-024-06108-8
- By:
- Publication type:
- Article
Memristive tonotopic mapping with volatile resistive switching memory devices.
- Published in:
- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-47228-1
- By:
- Publication type:
- Article
Resistive Switching Devices for Neuromorphic Computing: From Foundations to Chip Level Innovations.
- Published in:
- Nanomaterials (2079-4991), 2024, v. 14, n. 6, p. 527, doi. 10.3390/nano14060527
- By:
- Publication type:
- Article
An analytical approach to engineer multistability in the oscillatory response of a pulse-driven ReRAM.
- Published in:
- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-55255-7
- By:
- Publication type:
- Article
Effect of oxygen vacancy concentration on the resistive random access memory characteristics of NiO<sub>x</sub> (x = 1, 0.97, 0.94) thin films.
- Published in:
- Journal of Materials Science, 2024, v. 59, n. 7, p. 2988, doi. 10.1007/s10853-024-09439-1
- By:
- Publication type:
- Article
An Electrically Resistive Switching Nonvolatile Memory System Based on PEDOT:PSS.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 4, p. 1, doi. 10.1002/pssa.202300363
- By:
- Publication type:
- Article
Photoelectric Multilevel Memory Device based on Covalent Organic Polymer Film with Keto–Enol Tautomerism for Harsh Environments Applications.
- Published in:
- Advanced Functional Materials, 2024, v. 34, n. 1, p. 1, doi. 10.1002/adfm.202306593
- By:
- Publication type:
- Article
Design of Ternary Logic Circuits Using GNRFET and RRAM.
- Published in:
- Circuits, Systems & Signal Processing, 2023, v. 42, n. 12, p. 7335, doi. 10.1007/s00034-023-02445-9
- By:
- Publication type:
- Article
Frequency Tunability of Spin‐Torque Vortex Oscillator in Permalloy Nanodisks with Modified Material Properties.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 12, p. 1, doi. 10.1002/pssr.202300056
- By:
- Publication type:
- Article
Resistive Mechanisms and Microscopic Electrical Models of Metal Oxide Resistive Memory.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 23, p. 1, doi. 10.1002/pssa.202300416
- By:
- Publication type:
- Article
Material to system-level benchmarking of CMOS-integrated RRAM with ultra-fast switching for low power on-chip learning.
- Published in:
- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-42214-x
- By:
- Publication type:
- Article
Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory.
- Published in:
- Polymers (20734360), 2023, v. 15, n. 22, p. 4374, doi. 10.3390/polym15224374
- By:
- Publication type:
- Article
The Old Polyoxometalates in New Application as Molecular Resistive Switching Memristors.
- Published in:
- European Journal of Inorganic Chemistry, 2023, v. 26, n. 32, p. 1, doi. 10.1002/ejic.202300264
- By:
- Publication type:
- Article
Cover Feature: The Old Polyoxometalates in New Application as Molecular Resistive Switching Memristors (Eur. J. Inorg. Chem. 32/2023).
- Published in:
- European Journal of Inorganic Chemistry, 2023, v. 26, n. 32, p. 1, doi. 10.1002/ejic.202300608
- By:
- Publication type:
- Article
N‐P Reconfigurable Dual‐Mode Memtransistors for Compact Bio‐Inspired Feature Extractor with Inhibitory‐Excitatory Spiking Capability.
- Published in:
- Advanced Functional Materials, 2023, v. 33, n. 45, p. 1, doi. 10.1002/adfm.202302949
- By:
- Publication type:
- Article
Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300286
- By:
- Publication type:
- Article
Enhanced ferroelectric properties of low-annealed SrBi<sub>2</sub>(Ta,Nb)<sub>2</sub>O<sub>9</sub> thin films for NvFeRAM applications.
- Published in:
- Applied Nanoscience, 2023, v. 13, n. 11, p. 7171, doi. 10.1007/s13204-023-02885-4
- By:
- Publication type:
- Article
Temperature Dependence of Electrical Properties and Conduction Mechanism of SiN<sub>x</sub>‐Based Resistive Random Access Memory.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 21, p. 1, doi. 10.1002/pssa.202300398
- By:
- Publication type:
- Article
Graphene-based RRAM devices for neural computing.
- Published in:
- Frontiers in Neuroscience, 2023, p. 01, doi. 10.3389/fnins.2023.1253075
- By:
- Publication type:
- Article
Controlled Memristic Behavior of Metal-Organic Framework as a Promising Memory Device.
- Published in:
- Nanomaterials (2079-4991), 2023, v. 13, n. 20, p. 2736, doi. 10.3390/nano13202736
- By:
- Publication type:
- Article
New Generation Beta‐Gallium Oxide Nanomaterials: Growth and Performances in Electronic Devices.
- Published in:
- Advanced Engineering Materials, 2023, v. 25, n. 19, p. 1, doi. 10.1002/adem.202300688
- By:
- Publication type:
- Article
Double-Forming Mechanism of TaO x -Based Resistive Memory Device and Its Synaptic Applications.
- Published in:
- Materials (1996-1944), 2023, v. 16, n. 18, p. 6184, doi. 10.3390/ma16186184
- By:
- Publication type:
- Article
Material to system-level benchmarking of CMOS-integrated RRAM with ultra-fast switching for low power on-chip learning.
- Published in:
- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-42214-x
- By:
- Publication type:
- Article
Fabrication of AIE Polymer-Functionalized Reduced Graphene Oxide for Information Storage.
- Published in:
- Molecules, 2023, v. 28, n. 17, p. 6271, doi. 10.3390/molecules28176271
- By:
- Publication type:
- Article
Sol–Gel-Processed Y 2 O 3 –Al 2 O 3 Mixed Oxide-Based Resistive Random-Access-Memory Devices.
- Published in:
- Nanomaterials (2079-4991), 2023, v. 13, n. 17, p. 2462, doi. 10.3390/nano13172462
- By:
- Publication type:
- Article
Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO X :SiO 2 Thin Films on Resistive Random Access Memory Devices.
- Published in:
- Nanomaterials (2079-4991), 2023, v. 13, n. 15, p. 2179, doi. 10.3390/nano13152179
- By:
- Publication type:
- Article
Superior artificial synaptic properties applicable to neuromorphic computing system in HfO<sub>x</sub>-based resistive memory with high recognition rates.
- Published in:
- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03862-0
- By:
- Publication type:
- Article
Multi-Level Resistive Al/Ga 2 O 3 /ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing.
- Published in:
- Nanomaterials (2079-4991), 2023, v. 13, n. 12, p. 1851, doi. 10.3390/nano13121851
- By:
- Publication type:
- Article
Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications.
- Published in:
- Nanomaterials (2079-4991), 2023, v. 13, n. 12, p. 1879, doi. 10.3390/nano13121879
- By:
- Publication type:
- Article
Realization of Artificial Nerve Synapses Based on Biological Threshold Resistive Random Access Memory.
- Published in:
- Advanced Biology, 2023, v. 7, n. 6, p. 1, doi. 10.1002/adbi.202200298
- By:
- Publication type:
- Article
Fabrication of Multi-Bit SRAMs Using Quantum Dot Channel (QDC)-Quantum Dot Gate (QDG) FET.
- Published in:
- International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S0129156423500179
- By:
- Publication type:
- Article
Enhancing Number of Bits Via Mini-Energy Band Transitions Using Si Quantum Dot Channel (QDC) and Ge Quantum Dot Gate (QDG) FETs and NVRAMs.
- Published in:
- International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S0129156423500180
- By:
- Publication type:
- Article
Novel Multi-State QDC-QDG FETs and Gate All Around (GAA) FETs for Integrated Logic and QD-NVRAMs.
- Published in:
- International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S012915642350026X
- By:
- Publication type:
- Article
A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO<sub>2</sub>(Y)/Ta<sub>2</sub>O<sub>5</sub>/TiN/Ti Memristive Devices.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 11, p. 1, doi. 10.1002/pssa.202200520
- By:
- Publication type:
- Article
Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte.
- Published in:
- NPG Asia Materials, 2023, v. 15, n. 1, p. 1, doi. 10.1038/s41427-023-00481-0
- By:
- Publication type:
- Article
The enhanced electrode-dependent resistive random access memory based on BiFeO<sub>3</sub>.
- Published in:
- Applied Physics A: Materials Science & Processing, 2023, v. 129, n. 5, p. 1, doi. 10.1007/s00339-023-06619-9
- By:
- Publication type:
- Article
Impact of sneak paths on in-memory logic design in memristive crossbars.
- Published in:
- IT: Information Technology, 2023, v. 65, n. 1/2, p. 29, doi. 10.1515/itit-2023-0020
- By:
- Publication type:
- Article
Optimizing multi-level ReRAM memory for low latency and low energy consumption.
- Published in:
- IT: Information Technology, 2023, v. 65, n. 1/2, p. 52, doi. 10.1515/itit-2023-0022
- By:
- Publication type:
- Article