Works about NONVOLATILE memory

Results: 488

Anomalous Optically Induced Nonvolatile Magnetization Effect in Mn3O4 Superparamagnetic Nanoparticles.

Published in:

Particle & Particle Systems Characterization, 2022, v. 39, n. 5, p. 1, doi. 10.1002/ppsc.202100261

By:

Zhang, Yin;
Yao, Kangkang;
Li, Jianing;
Cao, Kaiyan;
Wang, Fang;
Tian, Fanghua;
Zhou, Chao;
Song, Xiaoping;
Yang, Sen

Publication type:

Article

Contents: (Adv. Funct. Mater. 18/2015).

Published in:: Advanced Functional Materials, 2015, v. 25, n. 18, p. 2631, doi. 10.1002/adfm.201570120
Publication type:: Article

High-Performance Nonvolatile Transistor Memories of Pentacence Using the Green Electrets of Sugar-based Block Copolymers and Their Supramolecules.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 27, p. 4240, doi. 10.1002/adfm.201304297

By:

Chiu, Yu‐Cheng;
Otsuka, Issei;
Halila, Sami;
Borsali, Redouane;
Chen, Wen‐Chang

Publication type:

Article

Enhancing Security and Power Efficiency of Ascon Hardware Implementation with STT-MRAM.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 17, p. 3519, doi. 10.3390/electronics13173519

By:

Roussel, Nathan;
Potin, Olivier;
Di Pendina, Grégory;
Dutertre, Jean-Max;
Rigaud, Jean-Baptiste

Publication type:

Article

In-Memory Computing Integrated Structure Circuit Based on Nonvolatile Flash Memory Unit.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 14, p. 3155, doi. 10.3390/electronics12143155

By:

Xu, Peilong;
Lan, Dan;
Wang, Fengyun;
Shin, Incheol

Publication type:

Article

Ti/HfO 2 -Based RRAM with Superior Thermal Stability Based on Self-Limited TiO x.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 11, p. 2426, doi. 10.3390/electronics12112426

By:

He, Huikai;
Tan, Yixin;
Lee, Choonghyun;
Zhao, Yi

Publication type:

Article

Recent Research for HZO-Based Ferroelectric Memory towards In-Memory Computing Applications.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 10, p. 2297, doi. 10.3390/electronics12102297

By:

Yoo, Jaewook;
Song, Hyeonjun;
Lee, Hongseung;
Lim, Seongbin;
Kim, Soyeon;
Heo, Keun;
Bae, Hagyoul

Publication type:

Article

Resistive Switching Characteristic of Cu Electrode-Based RRAM Device.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 6, p. 1471, doi. 10.3390/electronics12061471

By:

Yuan, Huanmei;
Wan, Tianqing;
Bai, Hao

Publication type:

Article

Nonvolatile Memories in Spiking Neural Network Architectures: Current and Emerging Trends.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 10, p. N.PAG, doi. 10.3390/electronics11101610

By:

Varshika, M. Lakshmi;
Corradi, Federico;
Das, Anup

Publication type:

Article

Voltage Pulse Driven VO 2 Volatile Resistive Transition Devices as Leaky Integrate-and-Fire Artificial Neurons.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 4, p. 516, doi. 10.3390/electronics11040516

By:

Xu, Zhen;
Bernussi, Ayrton A.;
Fan, Zhaoyang

Publication type:

Article

Content-Addressable Memory System Using a Nanoelectromechanical Memory Switch.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 3, p. 481, doi. 10.3390/electronics11030481

By:

Kim, Hyunju;
Cho, Mannhee;
Lee, Sanghyun;
Kwon, Hyug Su;
Choi, Woo Young;
Kim, Youngmin

Publication type:

Article

A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 19, p. 2384, doi. 10.3390/electronics10192384

By:

Rao, Siddharth;
Couet, Sebastien;
Van Beek, Simon;
Kundu, Shreya;
Sharifi, Shamin Houshmand;
Jossart, Nico;
Kar, Gouri Sankar

Publication type:

Article

Robust Offset-Cancellation Sense Amplifier for an Offset-Canceling Dual-Stage Sensing Circuit in Resistive Nonvolatile Memories.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 9, p. 1403, doi. 10.3390/electronics9091403

By:

Na, Taehui

Publication type:

Article

Challenges and Applications of Emerging Nonvolatile Memory Devices.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 6, p. 1029, doi. 10.3390/electronics9061029

By:

Banerjee, Writam

Publication type:

Article

A Regulated Charge Pump with Extremely Low Output Ripple.

Published in:

Electronics (2079-9292), 2019, v. 8, n. 11, p. 1293, doi. 10.3390/electronics8111293

By:

Navidi, Mir Mohammad;
Graham, David W.

Publication type:

Article

Resistive Memory for Harsh Electronics: Immunity to Surface Effect and High Corrosion Resistance via Surface Modification.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep04402

By:

Teng-Han Huang;
Po-Kang Yang;
Der-Hsien Lien;
Chen-Fang Kang;
Meng-Lin Tsai;
Yu-Lun Chueh;
Jr-Hau He

Publication type:

Article

Understanding filamentary growth and rupture by Ag ion migration through single-crystalline 2D layered CrPS4.

Published in:

NPG Asia Materials, 2020, v. 12, n. 1, p. 1, doi. 10.1038/s41427-020-00272-x

By:

Lee, Mi Jung;
Kim, Sung-Hoon;
Lee, Sangik;
Yoon, Chansoo;
Min, Kyung-Ah;
Choi, Hyunsoo;
Hong, Suklyun;
Lee, Sungmin;
Park, Je-Geun;
Ahn, Jae-Pyoung;
Park, Bae Ho

Publication type:

Article

Organic liquid crystals in optoelectronic device applications: Field‐effect transistors, nonvolatile memory, and photovoltaics.

Published in:

Journal of the Chinese Chemical Society, 2022, v. 69, n. 8, p. 1289, doi. 10.1002/jccs.202200061

By:

Lin, Yan‐Cheng;
Li, Guan‐Syuan;
Yu, Ping‐Jui;
Ercan, Ender;
Chen, Wen‐Chang

Publication type:

Article

Doped HfOx Nanoclusters: Polar and Resistive Switching in the Smallest Functional Units.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 22, p. 1, doi. 10.1002/pssa.202300404

By:

Rushchanskii, Konstantin Z.;
Ležaić, Marjana;
Blügel, Stefan

Publication type:

Article

Toward Energy‐Efficient Ferroelectric Field‐Effect Transistors and Ferroelectric Random Access Memories: Tailoring the Coercive Field of Ferroelectric HfO2 Films.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 6, p. 1, doi. 10.1002/pssa.202300712

By:

Lehninger, David;
Sünbül, Ayse;
Seidel, Konrad;
Lederer, Maximilian

Publication type:

Article

An Electrically Resistive Switching Nonvolatile Memory System Based on PEDOT:PSS.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 4, p. 1, doi. 10.1002/pssa.202300363

By:

Sobhy, Rasha;
El-Mansy, Mabrouk;
Khalil, Reda

Publication type:

Article

Resistive Mechanisms and Microscopic Electrical Models of Metal Oxide Resistive Memory.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 23, p. 1, doi. 10.1002/pssa.202300416

By:

Pan, Jinyan;
He, Hongyang;
Li, Tiejun;
Gao, Yunlong;
Yang, Shuya;
Lin, Xiangyujie

Publication type:

Article

A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High‐Temperature Annealing.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 7, p. 1, doi. 10.1002/pssa.202300067

By:

Sünbül, Ayse;
Lehninger, David;
Lederer, Maximilian;
Mähne, Hannes;
Hoffmann, Raik;
Bernert, Kerstin;
Thiem, Steffen;
Schöne, Fred;
Döllgast, Moritz;
Haufe, Nora;
Roy, Lisa;
Kämpfe, Thomas;
Seidel, Konrad;
Eng, Lukas M.

Publication type:

Article

Emergence of ferroelectricity in Sn-based perovskite semiconductor films by iminazole molecular reconfiguration.

Published in:

Nature Communications, 2025, v. 16, n. 1, p. 1, doi. 10.1038/s41467-024-55113-0

By:

Liu, Yu;
Yang, Shuzhang;
Hua, Lina;
Yang, Xiaomin;
Li, Enlong;
Wen, Jincheng;
Wu, Yanqiu;
Zhu, Liping;
Yang, Yingguo;
Zhao, Yan;
An, Zhenghua;
Chu, Junhao;
Li, Wenwu

Publication type:

Article

Electronic ferroelectricity in monolayer graphene moiré superlattices.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-55281-z

By:

Zhang, Le;
Ding, Jing;
Xiang, Hanxiao;
Liu, Naitian;
Zhou, Wenqiang;
Wu, Linfeng;
Xin, Na;
Watanabe, Kenji;
Taniguchi, Takashi;
Xu, Shuigang

Publication type:

Article

A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices.

Published in:

Functional Materials Letters, 2018, v. 11, n. 2, p. -1, doi. 10.1142/S1793604718500236

By:

Zheng, Pingping;
Zhang, Xuejiao;
Sun, Bai;
Mao, Shuangsuo;
Zhu, Shouhui;
Xia, Yudong;
Zhao, Yong;
Yu, Zhou

Publication type:

Article

EasiLIR: Lightweight Incremental Reprogramming for Sensor Networks.

Published in:

International Journal of Distributed Sensor Networks, 2014, p. 1, doi. 10.1155/2014/120597

By:

Jiefan Qiu;
Dong Li;
Hailong Shi;
Li Cui

Publication type:

Article

Performance Evaluation of Page Migration Scheme for NVRAM-Based Wireless Sensor Nodes.

Published in:

International Journal of Distributed Sensor Networks, 2013, p. 1, doi. 10.1155/2013/278132

By:

Yeonseung Ryu

Publication type:

Article

Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications.

Published in:

Journal of Nanotechnology, 2012, p. 1, doi. 10.1155/2012/492121

By:

Kwong, D.-L.;
Li, X.;
Sun, Y.;
Ramanathan, G.;
Chen, Z. X.;
Wong, S. M.;
Li, Y.;
Shen, N. S.;
Buddharaju, K.;
Yu, Y. H.;
Lee, S. J.;
Singh, N.;
Lo, G. Q.

Publication type:

Article

Effect of Ar-plasma treatment of ITO layer on resistive memory properties of a Ti/ITO point-contact structure.

Published in:

Modern Physics Letters B, 2019, v. 33, n. 14/15, p. N.PAG, doi. 10.1142/S0217984919400426

By:

Liu, Chih-Yi;
Chih, Wan-We;
Weng, Chao-Kai;
Tien, Wei-Chen;
Ye, Chang-Sin

Publication type:

Article

A simple time-delay memristor and its application in 2D HR neuron model.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2021, v. 35, n. 13, p. N.PAG, doi. 10.1142/S0217979221501666

By:

Li, Ruihua;
Ding, Ruihua

Publication type:

Article

Graphene band engineering for resistive random-access memory application.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2020, v. 34, n. 18, p. N.PAG, doi. 10.1142/S0217979220501714

By:

Koohzadi, Pooria;
Ahmadi, Mohammad Taghi;
Karamdel, Javad;
Nguyen, Truong Khang

Publication type:

Article

Ferroelectric Nanodot Arrays with Topologically Confined Domain Walls in Center Domains.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 7, p. 5151, doi. 10.1007/s11664-025-12004-4

By:

Zhang, Siyi;
Wu, Jinyang;
Li, Qingsheng;
Liu, Hao;
Zheng, Shuhan;
Li, Zhongwen

Publication type:

Article

Multilevel and Low-Power Resistive Switching Based on pn Heterojunction Memory.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 4, p. 2162, doi. 10.1007/s11664-023-10906-9

By:

Li, Xinmiao;
Yu, Hao;
Fang, Ruihua;
Zhu, Wenhui;
Wang, Liancheng;
Zhang, Lei

Publication type:

Article

A Visible Light Modulated Resistive Switching Memory Behaviors in the Ta/BiFeO3/Carbon/BaTiO3/Si Device.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 7, p. 3972, doi. 10.1007/s11664-021-08920-w

By:

Li, Xiulin;
Li, Xiaoping;
Chen, Peng

Publication type:

Article

Solvent‐Vapor Annealing of Amphiphile/Metal Interface for Orientated Molecular Stacking and Upgraded Resistive Memory Performance.

Published in:

Macromolecular Chemistry & Physics, 2019, v. 220, n. 22, p. N.PAG, doi. 10.1002/macp.201900334

By:

Zhang, Cheng;
Li, Hua;
Li, Zhuang;
Li, Yang;
Zhang, Qi‐jian;
Lu, Jian‐mei

Publication type:

Article

Thermal‐Responsive Polyoxometalate–Metalloviologen Hybrid: Reversible Intermolecular Three‐Component Reaction and Temperature‐Regulated Resistive Switching Behaviors.

Published in:

Angewandte Chemie, 2021, v. 133, n. 31, p. 17048, doi. 10.1002/ange.202104333

By:

Huang, You‐Ren;
Lin, Xiang‐Ling;
Chen, Bin;
Zheng, Hui‐Dong;
Chen, Zhi‐Rong;
Li, Hao‐Hong;
Zheng, Shou‐Tian

Publication type:

Article

Asynchronous memory access unit for general purpose processors.

Published in:

BenchCouncil Transactions on Benchmarks, Standards & Evaluations, 2022, v. 2, n. 2, p. 1, doi. 10.1016/j.tbench.2022.100061

By:

Luming Wang;
Xu Zhang;
Tianyue Lu;
Mingyu Chen

Publication type:

Article

CLUSTER ROUTER BASED ON ECCENTRICITY.

Published in:

Eurasian Physical Technical Journal, 2022, v. 19, n. 3, p. 84, doi. 10.31489/2022No3/84-90

By:

Z. Zh, Zhanabaev;
S. N., Akhtanov;
D. A., Turlykozhayeva;
N. M., Ussipov;
M. K., Ibraimov

Publication type:

Article

Regulation of firing rhythms in a four‐stable memristor‐based Hindmarsh–Rose neuron.

Published in:

Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 19, p. 715, doi. 10.1049/ell2.12235

By:

Li, Zhijun;
Zhou, Haiyan

Publication type:

Article

贻贝启发的偶氮-聚多巴胺涂层用于光电双响应忆阻器件.

Published in:

Journal of Functional Polymers, 2022, v. 35, n. 4, p. 339, doi. 10.14133/j.cnki.1008-9357.20210701001

By:

龚明磊;
刘铭扬;
王潇漾;
杨金波;
陈彧;
张斌

Publication type:

Article

Exploring the Influence of Copper Chemical Displacement Duration on Nonvolatile Oxide-based Resistive Memory Device Characteristics.

Published in:

Sensors & Materials, 2024, v. 36, n. 3, Part 3, p. 1093, doi. 10.18494/SAM4740

By:

Chu-En Lin;
Bo-Qin Yu;
Yi-Ching Cheng;
Hsin-Chiang You;
I-Nan Chang;
Jung-Chih Lin;
Chi-Chang Wu

Publication type:

Article

Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model.

Published in:

Nano Convergence, 2025, v. 12, n. 1, p. 1, doi. 10.1186/s40580-025-00480-7

By:

Kim, Hye Rim;
Seok, Tae Jun;
Ha, Tae Jung;
Song, Jeong Hwan;
Dae, Kyun Seong;
Lee, Sang Gil;
Choi, Hyun Seung;
Park, Su Yong;
Choi, Byung Joon;
Jang, Jae Hyuck;
Kim, Soo Gil;
Park, Tae Joo

Publication type:

Article

面向新型非易失存储的文件系统研究综述.

Published in:

Application Research of Computers / Jisuanji Yingyong Yanjiu, 2021, v. 38, n. 6, p. 1601, doi. 10.19734/j.issn.1001-3695.2020.06.0212

By:

徐远超

Publication type:

Article

Skyrmion-mediated nonvolatile ternary memory.

Published in:

Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-66853-w

By:

Rajib, Md Mahadi;
Bindal, Namita;
Raj, Ravish Kumar;
Kaushik, Brajesh Kumar;
Atulasimha, Jayasimha

Publication type:

Article

Synthesis and memory properties of a series of novel asymmetric soluble polyimides.

Published in:

Journal of Polymer Engineering, 2023, v. 43, n. 2, p. 125, doi. 10.1515/polyeng-2022-0128

By:

Gao, Yang;
Chen, Fang-Yuan;
Hu, Kai-Tai;
Nan, Jun-Yi;
Shen, Ying-Zhong

Publication type:

Article

High-Performance Ferroelectric Capacitors Based on Pt/BaTiO 3 /SrRuO 3 /SrTiO 3 Heterostructures for Nonvolatile Memory Applications.

Published in:

Crystals (2073-4352), 2025, v. 15, n. 4, p. 337, doi. 10.3390/cryst15040337

By:

Fang, Zengyuan;
Peng, Yiming;
Li, Haiou;
Liu, Xingpeng;
Zhai, Jianghui

Publication type:

Article

Modeling and Simulation of Hafnium Oxide RRAM Based on Oxygen Vacancy Conduction.

Published in:

Crystals (2073-4352), 2021, v. 11, n. 12, p. 1462, doi. 10.3390/cryst11121462

By:

Lin, Jinfu;
Liu, Hongxia;
Wang, Shulong;
Zhang, Siyu

Publication type:

Article

Sol-Gel Derived ZnO Thin Films with Nonvolatile Resistive Switching Behavior for Future Memory Applications.

Published in:

Coatings (2079-6412), 2024, v. 14, n. 7, p. 824, doi. 10.3390/coatings14070824

By:

Shen, Xiangqian;
Yu, Zhiqiang

Publication type:

Article

Alloyed High-k-Based Resistive Switching Memory in Contact Hole Structures.

Published in:

Coatings (2079-6412), 2021, v. 11, n. 4, p. 451, doi. 10.3390/coatings11040451

By:

Kim, Byeongjeong;
Mahata, Chandreswar;
Ryu, Hojeong;
Ismail, Muhammad;
Yang, Byung-Do;
Kim, Sungjun

Publication type:

Article