Works matching DE "NONVOLATILE memory"

Results: 487

Overcoming Endurance Limitations in Organic Nonvolatile Memories Through N‐Type Small‐Molecule Semiconductor Implementation and Thermal Optimization.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 9, p. 1, doi. 10.1002/aelm.202400864

By:

Liu, Zhenliang;
Hou, Shuyi;
Wang, Yiru;
Li, Zeya;
Lei, Hangyu;
Yin, Jiang;
Gao, Xu;
Xia, Yidong;
Liu, Zhiguo

Publication type:

Article

Ferroelectric Nanodot Arrays with Topologically Confined Domain Walls in Center Domains.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 7, p. 5151, doi. 10.1007/s11664-025-12004-4

By:

Zhang, Siyi;
Wu, Jinyang;
Li, Qingsheng;
Liu, Hao;
Zheng, Shuhan;
Li, Zhongwen

Publication type:

Article

Intermediate Layer‐Assisted Trap Density Reduction in Low‐Power Optoelectronic Memristors for Multifunctional Systems.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 22, p. 1, doi. 10.1002/adfm.202421080

By:

Lee, Min Jong;
Kim, Tae Hyuk;
Lee, Sang Heon;
Oh, Seunghyun;
Khan, Muhammad Asghar;
Lee, Gyeong Min;
Choi, Young Kyun;
Lee, Soyeon;
Ahn, Hyungju;
Oh, Soong Ju;
Yang, Jiwoong;
Shim, Jae Won

Publication type:

Article

Preparation of Weavable, All-Carbon Fibers for Non-Volatile Memory Devices.

Published in:

Angewandte Chemie, 2013, v. 125, n. 50, p. 13593, doi. 10.1002/ange.201306770

By:

Sun, Gengzhi;
Liu, Juqing;
Zheng, Lianxi;
Huang, Wei;
Zhang, Hua

Publication type:

Article

Carbon nitride supported silver nanoparticles: a potential system for non-volatile memory application with high ON–OFF ratio.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 9, p. 8399, doi. 10.1007/s10854-019-01157-8

By:

Perla, Venkata K.;
Ghosh, Sarit K.;
Kumar, Prashant;
Ray, Sekhar C.;
Mallick, Kaushik

Publication type:

Article

Unipolar nonvolatile memory devices based on the composites of poly(9-vinylcarbazole) and zinc oxide nanoparticles.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 16, p. 11749, doi. 10.1007/s10854-017-6979-2

By:

Zhao, Enming;
Liu, Diyou;
Liu, Lu;
Yang, Xinghua;
Kan, Wei;
Sun, Yanmei

Publication type:

Article

Nonvolatile resistance switching memory devices fabricated from the photopolymerized poly( N-vinylcarbazole)-graphene oxide composites.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 4, p. 3695, doi. 10.1007/s10854-016-5975-2

By:

Yang, Penglei;
Ma, Xun;
Ni, Xiuyuan

Publication type:

Article

Properties of Ti-Sb-Te doped with SbSe alloy for application in nonvolatile phase change memory.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 923, doi. 10.1007/s10854-016-5608-9

By:

Shen, Lanlan;
Song, Sannian;
Song, Zhitang;
Li, Le;
Guo, Tianqi;
Cheng, Yan;
Wu, Liangcai;
Liu, Bo;
Feng, Songlin

Publication type:

Article

AlO-CuO composite charge-trapping nonvolatile memory.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 928, doi. 10.1007/s10854-016-5609-8

By:

Liu, Jinqiu;
Xu, Bo;
Xia, Yidong;
Yin, Jiang;
Liu, Zhiguo;
Lu, Jianxin

Publication type:

Article

CdSe quantum dot/AlOx based non-volatile resistive memory.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 4, p. 3488, doi. 10.1007/s10854-015-4182-x

By:

Kannan, V.;
Kim, Hyun-Seok;
Park, Hyun-Chang

Publication type:

Article

Nonvolatile bio-memristor fabricated with natural bio-materials from spider silk.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 4, p. 3957, doi. 10.1007/s10854-015-4248-9

By:

Sun, Bai;
Liang, Dandan;
Li, Xiaoping;
Chen, Peng

Publication type:

Article

Resistive switching in $$\hbox {BiFeO}_3$$ -based heterostructures due to ferroelectric modulation on interface Schottky barriers.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3251, doi. 10.1007/s10854-014-2010-3

By:

Chen, Dongxia;
Li, Aidong;
Wu, Di

Publication type:

Article

Insulator Metal Transition-Based Selector in Crossbar Memory Arrays.

Published in:

Electronic Materials, 2024, v. 5, n. 1, p. 17, doi. 10.3390/electronicmat5010002

By:

Darwish, Mahmoud;
Pohl, László

Publication type:

Article

CLUSTER ROUTER BASED ON ECCENTRICITY.

Published in:

Eurasian Physical Technical Journal, 2022, v. 19, n. 3, p. 84, doi. 10.31489/2022No3/84-90

By:

Z. Zh, Zhanabaev;
S. N., Akhtanov;
D. A., Turlykozhayeva;
N. M., Ussipov;
M. K., Ibraimov

Publication type:

Article

Oxynitride Amorphous Carbon Layer for Electrically and Thermally Robust Bipolar Resistive Switching.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201090

By:

Min, SunHwa;
Hyeon, Da Seul;
Jang, Gabriel;
Choi, Jisoo;
Seo, Jeongwoo;
Kwon, Soyeong;
Kim, Dong‐Wook;
Hong, Jin Pyo

Publication type:

Article

Covalent Functionalization of Black Phosphorus Nanosheets with Photochromic Polymer for Transient Optoelectronic Memory Devices.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200925

By:

Wu, Dongchuang;
Cui, Xiaosheng;
El‐Khouly, Mohamed E.;
Gu, Minchao;
Zhang, Bin;
Chen, Yu

Publication type:

Article

Heterosynaptic Plasticity Achieved by Highly Anisotropic Ionic Migration in Layered LixMoO3 for Neuromorphic Application (Adv. Electron. Mater. 11/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200721

By:

Qin, Jing‐Kai;
Zhu, Bing‐Xuan;
Wang, Cong;
Zhu, Cheng‐Yi;
Sun, Ruo‐Yao;
Zhen, Liang;
Chai, Yang;
Xu, Cheng‐Yan

Publication type:

Article

Heterosynaptic Plasticity Achieved by Highly Anisotropic Ionic Migration in Layered LixMoO3 for Neuromorphic Application.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200721

By:

Qin, Jing‐Kai;
Zhu, Bing‐Xuan;
Wang, Cong;
Zhu, Cheng‐Yi;
Sun, Ruo‐Yao;
Zhen, Liang;
Chai, Yang;
Xu, Cheng‐Yan

Publication type:

Article

Antimony‐Doped p‐Type In2Se3 for Heterophase Homojunction with High‐Performance Reconfigurable Broadband Photovoltaic Effect.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200665

By:

Li, Shasha;
Wang, Bing;
Li, Lixia;
Li, Jie;
Wang, Mengna;
Luo, Gaoli;
Ren, Xiao;
Yan, Yong;
Li, Jingbo

Publication type:

Article

Introducing Spontaneously Phase‐Separated Heterogeneous Interfaces Enables Low Power Consumption and High Reliability for Phase Change Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200437

By:

Zeng, Yuntao;
Li, Han;
Zhu, Yunlai;
Cheng, Xiaomin;
Xu, Ming;
Tong, Hao;
Miao, Xiangshui

Publication type:

Article

Highly Flexible and Asymmetric Hexagonal‐Shaped Crystalline Structured Germanium Dioxide‐Based Multistate Resistive Switching Memory Device for Data Storage and Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200332

By:

Chougale, Mahesh Y.;
Khan, Muhammad Umair;
Kim, Jungmin;
Furqan, Chaudhry Muhammad;
Saqib, Qazi Muhammad;
Shaukat, Rayyan Ali;
Patil, Swapnil R.;
Mohammad, Baker;
Kwok, Hoi‐Sing;
Bae, Jinho

Publication type:

Article

Two‐Terminal Self‐Gating Random‐Access Memory Based on Partially Aligned 2D Heterostructures.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200282

By:

Lee, Chang Jun;
Park, Myung Uk;
Kim, Sung Hyun;
Kim, Myeongjin;
Lee, Kyo‐Seok;
Yoo, Kyung‐Hwa

Publication type:

Article

A Low Power‐consumption and Transient Nonvolatile Memory Based on Highly Dense All‐Inorganic Perovskite Films (Adv. Electron. Mater. 9/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202270043

By:

Abbas, Ghulam;
Hassan, Muhammad;
Khan, Qasim;
Wang, Haifei;
Zhou, Guigang;
Zubair, Muhammad;
Xu, Xiuru;
Peng, Zhengchun

Publication type:

Article

Multifunctional Dual Gated Coupling Device Using Van Der Waals Ferroelectric Heterostructure.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200210

By:

Jin, Jiyou;
Wang, Zhongpu;
Peng, Zhisheng;
Liu, Hui;
Peng, Kang;
Wei, Haonan;
Wang, Yu;
Xu, Yushi;
Wei, Hang;
Chu, Weiguo;
Li, Yong Jun;
Sun, Lianfeng

Publication type:

Article

Efficient Spin‐Orbit Torque Switching of Perpendicular Magnetization using Topological Insulators with High Thermal Tolerance.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200003

By:

Pan, Quanjun;
Liu, Yuting;
Wu, Hao;
Zhang, Peng;
Huang, Hanshen;
Eckberg, Christopher;
Che, Xiaoyu;
Wu, Yingying;
Dai, Bingqian;
Shao, Qiming;
Wang, Kang L.

Publication type:

Article

A Low Power‐consumption and Transient Nonvolatile Memory Based on Highly Dense All‐Inorganic Perovskite Films.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101412

By:

Abbas, Ghulam;
Hassan, Muhammad;
Khan, Qasim;
Wang, Haifei;
Zhou, Guigang;
Zubair, Muhammad;
Xu, Xiuru;
Peng, Zhengchun

Publication type:

Article

1S1R Optimization for High‐Frequency Inference on Binarized Spiking Neural Networks.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202200323

By:

Minguet Lopez, Joel;
Rafhay, Quentin;
Dampfhoffer, Manon;
Reganaz, Lucas;
Castellani, Niccolo;
Meli, Valentina;
Martin, Simon;
Grenouillet, Laurent;
Navarro, Gabriele;
Magis, Thomas;
Carabasse, Catherine;
Hirtzlin, Tifenn;
Vianello, Elisa;
Deleruyelle, Damien;
Portal, Jean‐Michel;
Molas, Gabriel;
Andrieu, François

Publication type:

Article

Differentiable Content Addressable Memory with Memristors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202101198

By:

Pedretti, Giacomo;
Graves, Catherine E.;
Van Vaerenbergh, Thomas;
Serebryakov, Sergey;
Foltin, Martin;
Sheng, Xia;
Mao, Ruibin;
Li, Can;
Strachan, John Paul

Publication type:

Article

A Dynamical Compact Model of Diffusive and Drift Memristors for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100696

By:

Zhuo, Ye;
Midya, Rivu;
Song, Wenhao;
Wang, Zhongrui;
Asapu, Shiva;
Rao, Mingyi;
Lin, Peng;
Jiang, Hao;
Xia, Qiangfei;
Williams, R. Stanley;
Yang, J. Joshua

Publication type:

Article

High‐Performance Pentacene‐Based Field‐Effect Transistor Memory Using the Electrets of Polymer Blends.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101342

By:

Liu, Zhenliang;
Yu, Tianpeng;
Wan, Zuteng;
Wang, Yiru;
Li, Zhiqiang;
Yin, Jiang;
Gao, Xu;
Xia, Yidong;
Liu, Zhiguo

Publication type:

Article

An Order–Disorder Type High‐Temperature Multiaxial Supramolecular Ferroelectric.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 6, p. 1, doi. 10.1002/aelm.202100635

By:

He, Lei;
Xu, Ke;
Shi, Ping‐Ping;
Ye, Qiong;
Zhang, Wen

Publication type:

Article

One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 6, p. 1, doi. 10.1002/aelm.202100499

By:

Cheema, Suraj S.;
Shanker, Nirmaan;
Hsu, Cheng‐Hsiang;
Datar, Adhiraj;
Bae, Jongho;
Kwon, Daewoong;
Salahuddin, Sayeef

Publication type:

Article

Bi‐Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon‐Based Resistive Random‐Access Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101083

By:

Jin, Soo‐Min;
Kim, Hea‐Jee;
Woo, Dae‐Seong;
Jung, Sung‐Mok;
Kim, Dong‐Eon;
Shim, Tae‐Hun;
Park, Jea‐Gun

Publication type:

Article

Polymer‐Based Composites for Engineering Organic Memristive Devices.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101192

By:

Prado‐Socorro, Carlos David;
Giménez‐Santamarina, Silvia;
Mardegan, Lorenzo;
Escalera‐Moreno, Luis;
Bolink, Henk J.;
Cardona‐Serra, Salvador;
Coronado, Eugenio

Publication type:

Article

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101189

By:

Zhang, Qing;
Xiong, Hao;
Wang, Qiangfei;
Xu, Liping;
Deng, Menghan;
Zhang, Jinzhong;
Fuchs, Dirk;
Li, Wenwu;
Shang, Liyan;
Li, Yawei;
Hu, Zhigao;
Chu, Junhao

Publication type:

Article

Optoelectronic Modulation of Interfacial Defects in Lead‐Free Perovskite Films for Resistive Switching.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101094

By:

Li, Jiacheng;
Zhang, Yu;
Yao, Chuangye;
Qin, Ni;
Chen, Ruqi;
Bao, Dinghua

Publication type:

Article

ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101103

By:

Hodgson, Peter D.;
Lane, Dominic;
Carrington, Peter J.;
Delli, Evangelia;
Beanland, Richard;
Hayne, Manus

Publication type:

Article

Improving the Long‐Term Stability of BPQD‐Based Memory Device via Modification with Polyvinylpyrrolidone‐Grafted Polydopamine.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101057

By:

Che, Qiang;
Wang, Xinzhu;
El‐Khouly, Mohamed E.;
Li, Guangwei;
Liu, Jiaxuan;
Zhang, Bin;
Chen, Yu

Publication type:

Article

Photoelectric Dual Response Nonvolatile Memory Device Based on Black Phosphorus Quantum Dots and Fullerene Derivative Composite.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202101143

By:

Li, Jinyong;
Hou, Jie;
Zhang, Bin;
Chen, Yu

Publication type:

Article

Highly Stable Forming‐Free Bipolar Resistive Switching in Cu Layer Stacked Amorphous Carbon Oxide: Transition between CC Bonding Complexes.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100660

By:

Hyeon, Da Seul;
Jang, Gabriel;
Min, SunHwa;
Hong, Jin Pyo

Publication type:

Article

Large Resistive Switching and Artificial Synaptic Behaviors in Layered Cs3Sb2I9 Lead‐Free Perovskite Memory Devices.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100237

By:

Paramanik, Subham;
Maiti, Abhishek;
Chatterjee, Soumyo;
Pal, Amlan J.

Publication type:

Article

Application of Resistive Random Access Memory in Hardware Security: A Review.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 12, p. 1, doi. 10.1002/aelm.202100536

By:

Rajendran, Gokulnath;
Banerjee, Writam;
Chattopadhyay, Anupam;
Aly, Mohamed M. Sabry

Publication type:

Article

An Ultrafast Quasi‐Non‐Volatile Semi‐Floating Gate Memory with Low‐Power Optoelectronic Memory Application.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 11, p. 1, doi. 10.1002/aelm.202100564

By:

Zhou, Yu;
Ning, Jing;
Shen, Xue;
Guo, Haibin;
Zhang, Chi;
Dong, Jianguo;
Lu, Wei;
Feng, Xin;
Hao, Yue

Publication type:

Article

In Memory Energy Application for Resistive Random Access Memory.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 12, p. 1, doi. 10.1002/aelm.202100297

By:

Trotti, Paola;
Oukassi, Sami;
Molas, Gabriel;
Bernard, Mathieu;
Aussenac, François;
Pillonnet, Gaël

Publication type:

Article

Complementary of Ferroelectric and Floating Gate Structure for High Performance Organic Nonvolatile Memory.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 11, p. 1, doi. 10.1002/aelm.202100599

By:

He, Lihua;
Li, Enlong;
He, Weixin;
Yan, Yujie;
Lan, Shuqiong;
Yu, Rengjian;
Chen, Huipeng;
Guo, Tailiang

Publication type:

Article

Solution‐Processed Dual Gate Ferroelectric–Ferroelectric Organic Polymer Field‐Effect Transistor for the Multibit Nonvolatile Memory.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 10, p. 1, doi. 10.1002/aelm.202100430

By:

Boampong, Amos Amoako;
Cho, Jae–Hyeok;
Choi, Yoonseuk;
Kim, Min–Hoi

Publication type:

Article

Observation of Optically Addressable Nonvolatile Memory in VO2 at Room Temperature.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 8, p. 1, doi. 10.1002/aelm.202001142

By:

Jung, Youngho;
Jeong, Junho;
Qu, Zhongnan;
Cui, Bin;
Khanda, Ankita;
Parkin, Stuart S. P.;
Poon, Joyce K. S.

Publication type:

Article

Large Tunnel Electroresistance with Ultrathin Hf0.5Zr0.5O2 Ferroelectric Tunnel Barriers.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202001074

By:

Prasad, Bhagwati;
Thakare, Vishal;
Kalitsov, Alan;
Zhang, Zimeng;
Terris, Bruce;
Ramesh, Ramamoorthy

Publication type:

Article

An Efficient Approach Based on Tuned Nanoionics to Maximize Memory Characteristics in Ag‐Based Devices.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202100022

By:

Banerjee, Writam;
Kim, Seong Hun;
Lee, Seungwoo;
Lee, Donghwa;
Hwang, Hyunsang

Publication type:

Article

Conductive Silver Grid Electrode for Flexible and Transparent Memristor Applications.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 2, p. 1, doi. 10.1002/aelm.202000948

By:

Han, Xu;
Xu, Ruixue;
Sun, Bowen;
Xu, Jing;
Hong, Wang;
Cai, Guofa;
Qian, Kai

Publication type:

Article