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Dynamics of Analog Switching Behavior in Thin Polycrystalline Barium Titanate.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300806
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- Article
Inkjet‐Printed Tungsten Oxide Memristor Displaying Non‐Volatile Memory and Neuromorphic Properties.
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- Advanced Functional Materials, 2024, v. 34, n. 20, p. 1, doi. 10.1002/adfm.202302290
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- Article
Melting-free integrated photonic memory with layered polymorphs.
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- Nanophotonics (21928606), 2024, v. 13, n. 12, p. 2089, doi. 10.1515/nanoph-2023-0725
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- Article
2D Multiferroics in As‐Substituted Bilayer α‐In<sub>2</sub>Se<sub>3</sub> with Enhanced Magnetic Moments for Next‐Generation Nonvolatile Memory Device.
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- Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300642
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- Article
A multi-terminal ion-controlled transistor with multifunctionality and wide temporal dynamics for reservoir computing.
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- Nano Research, 2024, v. 17, n. 5, p. 4444, doi. 10.1007/s12274-023-6343-1
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- Article
Realization of Selector‐Memory Bi‐Functionality with Self‐Current Regulation Utilizing Poly‐Crystalline Based GST Electrolyte for Memristor Hardware Development.
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- Advanced Materials Interfaces, 2024, v. 11, n. 12, p. 1, doi. 10.1002/admi.202300975
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- Article
Neural Architecture Search with In‐Memory Multiply–Accumulate and In‐Memory Rank Based on Coating Layer Optimized C‐Doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Memory.
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- Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202300458
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- Article
Multilevel and Low-Power Resistive Switching Based on pn Heterojunction Memory.
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- Journal of Electronic Materials, 2024, v. 53, n. 4, p. 2162, doi. 10.1007/s11664-023-10906-9
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- Article
A Survey of Emerging Memory in a Microcontroller Unit.
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- Micromachines, 2024, v. 15, n. 4, p. 488, doi. 10.3390/mi15040488
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- Article
First-Principles Prediction of High and Low Resistance States in Ta/h-BN/Ta Atomristor.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 7, p. 612, doi. 10.3390/nano14070612
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- Article
Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y 2 O 3 Random-Access Memory.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 6, p. 532, doi. 10.3390/nano14060532
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- Article
Toward Energy‐Efficient Ferroelectric Field‐Effect Transistors and Ferroelectric Random Access Memories: Tailoring the Coercive Field of Ferroelectric HfO<sub>2</sub> Films.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 6, p. 1, doi. 10.1002/pssa.202300712
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- Article
A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts.
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- Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300503
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- Article
A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts (Adv. Electron. Mater. 3/2024).
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- Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202470013
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- Article
Insulator Metal Transition-Based Selector in Crossbar Memory Arrays.
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- Electronic Materials, 2024, v. 5, n. 1, p. 17, doi. 10.3390/electronicmat5010002
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- Article
Reduction-Induced Magnetic Behavior in LaFeO 3−δ Thin Films.
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- Materials (1996-1944), 2024, v. 17, n. 5, p. 1188, doi. 10.3390/ma17051188
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- Article
Effect of Defects on the Characteristics of CoFeB–MgO-Based MRAM Structure.
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- SPIN (2010-3247), 2024, v. 14, n. 1, p. 1, doi. 10.1142/S2010324723500297
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- Article
Improvement of capacitive and resistive memory in WO<sub>3</sub> thin film with annealing.
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- Journal of Materials Science, 2024, v. 59, n. 8, p. 3270, doi. 10.1007/s10853-024-09422-w
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- Article
Exploring the Influence of Copper Chemical Displacement Duration on Nonvolatile Oxide-based Resistive Memory Device Characteristics.
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- Sensors & Materials, 2024, v. 36, n. 3, Part 3, p. 1093, doi. 10.18494/SAM4740
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- Article
An Electrically Resistive Switching Nonvolatile Memory System Based on PEDOT:PSS.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 4, p. 1, doi. 10.1002/pssa.202300363
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- Article
Coupled HR–HNN Neuron with a Locally Active Memristor.
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- International Journal of Bifurcation & Chaos in Applied Sciences & Engineering, 2024, v. 34, n. 2, p. 1, doi. 10.1142/S0218127424500226
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- Article
A Virtual Fabrication and High-Performance Design of 65 nm Nanocrystal Floating-Gate Transistor.
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- Modelling & Simulation in Engineering, 2024, p. 1, doi. 10.1155/2024/5162989
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- Article
Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 2, p. 210, doi. 10.3390/nano14020210
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- Article
Wet‐Etching‐Boosted Charge Storage in 1D Nitride‐Based Systems for Imitating Biological Synaptic Behaviors.
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- Advanced Functional Materials, 2023, v. 33, n. 52, p. 1, doi. 10.1002/adfm.202306030
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- Article
MoS 2 -Based Memristor: Robust Resistive Switching Behavior and Reliable Biological Synapse Emulation.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 24, p. 3117, doi. 10.3390/nano13243117
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- Article
Exploitable magnetic anisotropy and half-metallicity controls in multiferroic van der Waals heterostructure.
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- NPJ Computational Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1038/s41524-023-01178-2
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- Article
In Situ Observation of Domain Wall Lateral Creeping in a Ferroelectric Capacitor.
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- Advanced Functional Materials, 2023, v. 33, n. 50, p. 1, doi. 10.1002/adfm.202304606
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- Article
Resistive Mechanisms and Microscopic Electrical Models of Metal Oxide Resistive Memory.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 23, p. 1, doi. 10.1002/pssa.202300416
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- Article
The Old Polyoxometalates in New Application as Molecular Resistive Switching Memristors.
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- European Journal of Inorganic Chemistry, 2023, v. 26, n. 32, p. 1, doi. 10.1002/ejic.202300264
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- Article
Enhancing Memory Window Efficiency of Ferroelectric Transistor for Neuromorphic Computing via Two‐Dimensional Materials Integration.
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- Advanced Functional Materials, 2023, v. 33, n. 42, p. 1, doi. 10.1002/adfm.202304657
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- Article
Investigation of the Electrical Coupling Effect for Monolithic 3-Dimensional Nonvolatile Memory Consisting of a Feedback Field-Effect Transistor Using TCAD.
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- Micromachines, 2023, v. 14, n. 10, p. 1822, doi. 10.3390/mi14101822
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- Article
Air Force Office of Scientific Research Interests in Organic Materials.
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- Nonlinear Optics, Quantum Optics: Concepts in Modern Optics, 2023, v. 58, n. 3/4, p. 151
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- Article
Black Phosphorus Nanosheets in Field Effect Transistors with Ni and NiCr Contacts.
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- Physica Status Solidi (B), 2023, v. 260, n. 9, p. 1, doi. 10.1002/pssb.202200537
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- Article
Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO<sub>2</sub> Regulating Layer.
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- Advanced Electronic Materials, 2023, v. 9, n. 8, p. 1, doi. 10.1002/aelm.202300208
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- Article
Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO X :SiO 2 Thin Films on Resistive Random Access Memory Devices.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 15, p. 2179, doi. 10.3390/nano13152179
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- Article
Terahertz-readable laser engraved marks as a novel solution for product traceability.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-39586-5
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- Article
In-Memory Computing Integrated Structure Circuit Based on Nonvolatile Flash Memory Unit.
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- Electronics (2079-9292), 2023, v. 12, n. 14, p. 3155, doi. 10.3390/electronics12143155
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- Article
Giant Switchable Persistent Photoconductivity in Soft Chemistry Reduced SrTiO<sub>3</sub>.
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- Advanced Electronic Materials, 2023, v. 9, n. 7, p. 1, doi. 10.1002/aelm.202300068
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- Article
Expression of Concern: Electrical Study of Trapped Charges in Copper-Doped Zinc Oxide Films by Scanning Probe Microscopy for Nonvolatile Memory Applications.
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- 2023
- Publication type:
- Correction Notice
Multi-Level Resistive Al/Ga 2 O 3 /ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 12, p. 1851, doi. 10.3390/nano13121851
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- Article
Investigating the Electromechanical Behavior of Unconventionally Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>‐Based Capacitors Through Operando Nanobeam X‐Ray Diffraction.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201298
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- Article
Ti/HfO 2 -Based RRAM with Superior Thermal Stability Based on Self-Limited TiO x.
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- Electronics (2079-9292), 2023, v. 12, n. 11, p. 2426, doi. 10.3390/electronics12112426
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- Article
Preparation of Remote Plasma Atomic Layer-Deposited HfO 2 Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 11, p. 1785, doi. 10.3390/nano13111785
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- Article
Recent Research for HZO-Based Ferroelectric Memory towards In-Memory Computing Applications.
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- Electronics (2079-9292), 2023, v. 12, n. 10, p. 2297, doi. 10.3390/electronics12102297
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- Article
Resistive Switching Property of Raw Organic Cow Milk for Memory Application.
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- Sustainability (2071-1050), 2023, v. 15, n. 10, p. 8250, doi. 10.3390/su15108250
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- Article
Emergence of ferroelectricity in a nonferroelectric monolayer.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-38445-1
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- Article
Self‐Rolling‐Up Enabled Ultrahigh‐Density Information Storage in Freestanding Single‐Crystalline Ferroic Oxide Films.
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- Advanced Functional Materials, 2023, v. 33, n. 20, p. 1, doi. 10.1002/adfm.202213668
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- Article
Experimental and First‐Principles Study of Visible Light Responsive Memristor Based on CuAlAgCr/TiO<sub>2</sub>/W Structure for Artificial Synapses with Visual Perception.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201320
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- Article
The FAPbI<sub>3</sub> perovskite memristor with a PMMA passivation layer as an artificial synapse.
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- Applied Physics A: Materials Science & Processing, 2023, v. 129, n. 5, p. 1, doi. 10.1007/s00339-023-06632-y
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- Article
A Facile Hydrothermal Synthesis and Resistive Switching Behavior of α-Fe 2 O 3 Nanowire Arrays.
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- Molecules, 2023, v. 28, n. 9, p. 3835, doi. 10.3390/molecules28093835
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- Article