Works matching DE "NEUTRON transmutation doping of semiconductors"
Results: 20
Highly Reproducible Secondary Electron Imaging under Electron Irradiation Using High-Pass Energy Filtering in Low-Voltage Scanning Electron Microscopy.
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- Microscopy & Microanalysis, 2012, v. 18, n. 2, p. 385, doi. 10.1017/S1431927611012852
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Neutron transmutation doping of silicon <sup>30</sup>Si monoisotope with phosphorus.
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- Technical Physics Letters, 2006, v. 32, n. 6, p. 550, doi. 10.1134/S1063785006060307
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A STUDY OF PHOTOCONDUCTIVITY OF NEUTRON DOPED Si<sub>1-x</sub>Ge<sub>x</sub>-ALLOYS.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2012, v. 26, n. 2, p. 1250008-1, doi. 10.1142/S0217979212500087
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DIODE p-i-n-STRUCTURES BASED ON NEUTRON DOPED Si<sub>1-x</sub>Ge<sub>x</sub>-ALLOYS.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 11, p. 1459, doi. 10.1142/S0217979211058869
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Magnesium-Molybate Compounds as Matrix for <sup>99</sup>Mo/<sup>99m</sup>Tc Generators.
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- Pharmaceuticals (14248247), 2011, v. 4, n. 2, p. 215, doi. 10.3390/ph4020215
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Development of NTD Ge Sensors for Superconducting Bolometer.
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- Journal of Low Temperature Physics, 2016, v. 184, n. 3/4, p. 609, doi. 10.1007/s10909-015-1379-6
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Electroplated Indium Bumps as Thermal and Electrical Connections of NTD-Ge Sensors for the Fabrication of Microcalorimeter Arrays.
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- Journal of Low Temperature Physics, 2012, v. 167, n. 3/4, p. 535, doi. 10.1007/s10909-012-0560-4
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Optimization study to determine the appropriate location for the implementation of silicon doping in Tehran research reactor.
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- Radiation Physics & Engineering, 2023, v. 4, n. 4, p. 7, doi. 10.22034/rpe.2023.385820.1117
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Graphene nanoribbons: Chemical stitching.
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- Nature Nanotechnology, 2014, v. 9, n. 11, p. 875, doi. 10.1038/nnano.2014.257
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Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 1, p. 8
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Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates.
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- Journal of Materials Science, 2004, v. 39, n. 9, p. 3217, doi. 10.1023/B:JMSC.0000025864.93045.5f
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Physics with isotopically controlled semiconductors.
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- Semiconductors, 2010, v. 44, n. 7, p. 841, doi. 10.1134/S106378261007002X
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Dependence of the electrical parameters of MBE-grown Cd<sub> x </sub>Hg<sub>1 − x </sub>Te films on the level of doping with indium.
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- Semiconductors, 2008, v. 42, n. 6, p. 648, doi. 10.1134/S1063782608060031
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Specific features of transmutational doping of <sup>30</sup>Si-enriched silicon crystals with phosphorus: Studies by the method of electron spin resonance.
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- Semiconductors, 2006, v. 40, n. 8, p. 901, doi. 10.1134/S1063782606080082
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Microwave Magnetoresistance of Compensated p-Ge:Ga in the Region of the Insulator–Metal Phase Transition.
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- Semiconductors, 2002, v. 36, n. 7, p. 772, doi. 10.1134/1.1493747
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Electrical Properties of Transmutation-Doped Indium Phosphide.
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- Semiconductors, 2000, v. 34, n. 2, p. 150, doi. 10.1134/1.1187924
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Thermopower of transmutation-doped Ge:Ga in the region for hopping conductivity.
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- Semiconductors, 1997, v. 31, n. 10, p. 1008, doi. 10.1134/1.1187015
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Effect of Germanium Doping on the Production and Evolution of Divacancy Complexes in Neutron Irradiated Czochralski Silicon.
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- Journal of Electronic Materials, 2018, v. 47, n. 9, p. 5019, doi. 10.1007/s11664-018-6266-x
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Thermal neutron transmutation doping of GaN semiconductors.
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- Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-72862-2
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ISOGEN: Interactive isotope generation and depletion code.
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- Radiation Protection & Environment, 2016, v. 39, n. 4, p. 212, doi. 10.4103/0972-0464.199976
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