Works matching DE "NEUTRON transmutation doping of semiconductors"

Results: 20

Physics with isotopically controlled semiconductors.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 841, doi. 10.1134/S106378261007002X

By:

Haller, E. E.

Publication type:

Article

Dependence of the electrical parameters of MBE-grown Cd x Hg1 − x Te films on the level of doping with indium.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 648, doi. 10.1134/S1063782608060031

By:

Varavin, V. S.;
Dvoretskiĭ, S. A.;
Ikusov, D. G.;
Mikhaĭlov, N. N.;
Sidorov, Yu. G.;
Sidorov, G. Yu.;
Yakushev, M. V.

Publication type:

Article

Specific features of transmutational doping of 30Si-enriched silicon crystals with phosphorus: Studies by the method of electron spin resonance.

Published in:

Semiconductors, 2006, v. 40, n. 8, p. 901, doi. 10.1134/S1063782606080082

By:

Baranov, P. G.;
Ber, B. Ya.;
Godisov, O. N.;
Il'in, I. V.;
Ionov, A. N.;
Kaliteevskiĭ, A. K.;
Kaliteevskiĭ, M. A.;
Lazebnik, I. M.;
Safronov, A. Yu.;
Pohl, H.-J.;
Riemann, H.;
Abrosimov, N. V.;
Kop'ev, P. S.;
Bulanov, A. D.;
Gusev, A. V.

Publication type:

Article

Microwave Magnetoresistance of Compensated p-Ge:Ga in the Region of the Insulator–Metal Phase Transition.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 772, doi. 10.1134/1.1493747

By:

Veınger, A. I.;
Zabrodskiı, A. G.;
Tisnek, T. V.

Publication type:

Article

Electrical Properties of Transmutation-Doped Indium Phosphide.

Published in:

Semiconductors, 2000, v. 34, n. 2, p. 150, doi. 10.1134/1.1187924

By:

Kolin, N. G.;
Merkurisov, D. I.;
Solov’ev, S. P.

Publication type:

Article

Effect of Germanium Doping on the Production and Evolution of Divacancy Complexes in Neutron Irradiated Czochralski Silicon.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 9, p. 5019, doi. 10.1007/s11664-018-6266-x

By:

Dong, Peng;
Yang, Ping;
Yu, Xuegong;
Chen, Lin;
Ma, Yao;
Li, Mo;
Dai, Gang;
Zhang, Jian

Publication type:

Article

A STUDY OF PHOTOCONDUCTIVITY OF NEUTRON DOPED Si1-xGex-ALLOYS.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2012, v. 26, n. 2, p. 1250008-1, doi. 10.1142/S0217979212500087

By:

YEVSEYEV, V.;
CHEKANOV, V.

Publication type:

Article

DIODE p-i-n-STRUCTURES BASED ON NEUTRON DOPED Si1-xGex-ALLOYS.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 11, p. 1459, doi. 10.1142/S0217979211058869

By:

CHEKANOV, V.;
YEVSEYEV, V.;
KURYATKOV, V.;
PROKOFYEVA, T.

Publication type:

Article

Highly Reproducible Secondary Electron Imaging under Electron Irradiation Using High-Pass Energy Filtering in Low-Voltage Scanning Electron Microscopy.

Published in:

Microscopy & Microanalysis, 2012, v. 18, n. 2, p. 385, doi. 10.1017/S1431927611012852

By:

Tsurumi, Daisuke;
Hamada, Kotaro;
Kawasaki, Yuji

Publication type:

Article

Optimization study to determine the appropriate location for the implementation of silicon doping in Tehran research reactor.

Published in:

Radiation Physics & Engineering, 2023, v. 4, n. 4, p. 7, doi. 10.22034/rpe.2023.385820.1117

By:

Heydari, Mostafa;
Jafari, Hamid;
Gholamzadeh, Zohreh

Publication type:

Article

Neutron transmutation doping of silicon 30Si monoisotope with phosphorus.

Published in:

Technical Physics Letters, 2006, v. 32, n. 6, p. 550, doi. 10.1134/S1063785006060307

By:

Ionov, A. N.;
Baranov, P. G.;
Ber, B. Ya.;
Bulanov, A. D.;
Godisov, O. N.;
Gusev, A. V.;
Davydov, V. Yu.;
Il'in, I. V.;
Kaliteevskiĭ, A. K.;
Kaliteevskiĭ, M. A.;
Safronov, A. Yu.;
Lazebnik, I. M.;
Pohl, H.-J.;
Riemann, H.;
Abrosimov, N. V.;
Kop'ev, P. S.

Publication type:

Article

Thermal neutron transmutation doping of GaN semiconductors.

Published in:

Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-72862-2

By:

Barber, R.;
Nguyen, Q.;
Brockman, J.;
Gahl, J.;
Kwon, J.

Publication type:

Article

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 1, p. 8

By:

Dolgolenko, A. P.;
Litovchenko, P. G.;
Litovchenko, A. P.;
Varentsov, M. D.;
Lastovetsky, V. F.;
Gaidar, G. P.

Publication type:

Article

Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates.

Published in:

Journal of Materials Science, 2004, v. 39, n. 9, p. 3217, doi. 10.1023/B:JMSC.0000025864.93045.5f

By:

Park, S. H.;
Kang, T. W.;
Kim, T. W.

Publication type:

Article

ISOGEN: Interactive isotope generation and depletion code.

Published in:

Radiation Protection & Environment, 2016, v. 39, n. 4, p. 212, doi. 10.4103/0972-0464.199976

By:

Subbaiah, Kamatam Venkata

Publication type:

Article

Magnesium-Molybate Compounds as Matrix for 99Mo/99mTc Generators.

Published in:

Pharmaceuticals (14248247), 2011, v. 4, n. 2, p. 215, doi. 10.3390/ph4020215

By:

Monroy-Guzman, Fabiola;
Martinez, Thania Susana Jimenez;
Arriola, Humberto;
Gandara, Luis Carlos Longoria

Publication type:

Article

Thermopower of transmutation-doped Ge:Ga in the region for hopping conductivity.

Published in:

Semiconductors, 1997, v. 31, n. 10, p. 1008, doi. 10.1134/1.1187015

By:

Andreev, A. G.;
Zabrodskiı, A. G.;
Egorov, S. V.;
Zvyagin, I. P.

Publication type:

Article

Graphene nanoribbons: Chemical stitching.

Published in:

Nature Nanotechnology, 2014, v. 9, n. 11, p. 875, doi. 10.1038/nnano.2014.257

By:

Wang, Xinran

Publication type:

Article

Development of NTD Ge Sensors for Superconducting Bolometer.

Published in:

Journal of Low Temperature Physics, 2016, v. 184, n. 3/4, p. 609, doi. 10.1007/s10909-015-1379-6

By:

Garai, A.;
Mathimalar, S.;
Singh, V.;
Dokania, N.;
Nanal, V.;
Pillay, R.;
Ramakrishnan, S.;
Shrivastava, A.;
Jagadeesan, K.;
Thakare, S.

Publication type:

Article

Electroplated Indium Bumps as Thermal and Electrical Connections of NTD-Ge Sensors for the Fabrication of Microcalorimeter Arrays.

Published in:

Journal of Low Temperature Physics, 2012, v. 167, n. 3/4, p. 535, doi. 10.1007/s10909-012-0560-4

By:

Lo Cicero, U.;
Arnone, C.;
Barbera, M.;
Collura, A.;
Lullo, G.

Publication type:

Article

Works matching DE "NEUTRON transmutation doping of semiconductors"

Physics with isotopically controlled semiconductors.

Dependence of the electrical parameters of MBE-grown Cd<sub> x </sub>Hg<sub>1 − x </sub>Te films on the level of doping with indium.

Specific features of transmutational doping of <sup>30</sup>Si-enriched silicon crystals with phosphorus: Studies by the method of electron spin resonance.

Microwave Magnetoresistance of Compensated p-Ge:Ga in the Region of the Insulator–Metal Phase Transition.

Electrical Properties of Transmutation-Doped Indium Phosphide.

Effect of Germanium Doping on the Production and Evolution of Divacancy Complexes in Neutron Irradiated Czochralski Silicon.

A STUDY OF PHOTOCONDUCTIVITY OF NEUTRON DOPED Si<sub>1-x</sub>Ge<sub>x</sub>-ALLOYS.

DIODE p-i-n-STRUCTURES BASED ON NEUTRON DOPED Si<sub>1-x</sub>Ge<sub>x</sub>-ALLOYS.

Highly Reproducible Secondary Electron Imaging under Electron Irradiation Using High-Pass Energy Filtering in Low-Voltage Scanning Electron Microscopy.

Optimization study to determine the appropriate location for the implementation of silicon doping in Tehran research reactor.

Neutron transmutation doping of silicon <sup>30</sup>Si monoisotope with phosphorus.

Thermal neutron transmutation doping of GaN semiconductors.

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons.

Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates.

ISOGEN: Interactive isotope generation and depletion code.

Magnesium-Molybate Compounds as Matrix for <sup>99</sup>Mo/<sup>99m</sup>Tc Generators.

Thermopower of transmutation-doped Ge:Ga in the region for hopping conductivity.

Graphene nanoribbons: Chemical stitching.

Development of NTD Ge Sensors for Superconducting Bolometer.

Electroplated Indium Bumps as Thermal and Electrical Connections of NTD-Ge Sensors for the Fabrication of Microcalorimeter Arrays.