Works matching DE "NEGATIVE resistance devices"
Results: 29
Stability of subicular place fields across multiple light and dark transitions.
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- European Journal of Neuroscience, 2010, v. 32, n. 4, p. 648, doi. 10.1111/j.1460-9568.2010.07308.x
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Pulse Width Modulated Thyristor CSI for Grid Connected Photovoltaic Applications.
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- Journal of Active & Passive Electronic Devices, 2013, v. 8, n. 1, p. 47
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A UNIVERSAL OSCILLATOR ANALYSIS TECHNIQUE THAT ACCURATELY ESTIMATES FREQUENCY AND OUTPUT POWER.
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- Microwave Journal, 2003, v. 46, n. 9, p. 110
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Experimental Observation of Oscillating Wave Propagation on Switch Lines for Generation of Continuous Electromagnetic Waves.
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- Research Letters in Signal Processing, 2009, v. 2009, p. 1, doi. 10.1155/2009/816806
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STABILITY OF NEGATIVE RESISTANCE OSCILLATOR CIRCUITS.
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- International Journal of Electrical Engineering Education, 1999, v. 36, n. 3, p. 242, doi. 10.7227/IJEEE.36.3.6
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Accurate determination of half-life and radionuclidic purity of reactor produced <sup>177g</sup>Lu (<sup>177m</sup>Lu) for metabolic radiotherapy.
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- Journal of Radioanalytical & Nuclear Chemistry, 2008, v. 276, n. 3, p. 813, doi. 10.1007/s10967-008-0637-3
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HARMONIC DEVICE LINE SIMULATION OF NEGATIVE RESISTANCE MICROWAVE MESFET OSCILLATORS.
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- Microwave & Optical Technology Letters, 1990, v. 3, n. 9, p. 317, doi. 10.1002/mop.4650030907
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NEGATIVE RESISTANCE CHARACTERIZATION AND MEMORY PHENOMENA OF THE BINARY CHALCOGENIDE INDIUM POLYTELLURIDE CRYSTAL.
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- Journal of Ovonic Research, 2016, v. 12, n. 3, p. 129
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THREE-DIMENSIONAL SIMULATION FOR NEGATIVE RESISTANCE CHARACTERISTICS OF PARASITIC BIPOLAR TRANSISTOR IN A SMALL-SIZED MOSFET STRUCTURE.
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- International Journal of Numerical Modelling, 1995, v. 8, n. 5, p. 367, doi. 10.1002/jnm.1660080506
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Poststress RF-drifts of dual-band LC VCO in 0.18-μm CMOS technology.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2014, v. 24, n. 2, p. 243, doi. 10.1002/mmce.20755
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Noise wave techniques analysis applied to various planar microwave active filter topologies.
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- International Journal of RF & Microwave Computer-Aided Engineering, 1998, v. 8, n. 2, p. 116, doi. 10.1002/(SICI)1099-047X(199803)8:2<116::AID-MMCE5>3.0.CO;2-L
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Collective effects in networks of negatron elements.
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- Technical Physics, 1998, v. 43, n. 5, p. 477, doi. 10.1134/1.1259024
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Interpretation of Switching Properties of InGaSe<sub>2</sub> Single Crystal.
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- Acta Physica Polonica: A, 2012, v. 121, n. 3, p. 666, doi. 10.12693/APhysPolA.121.666
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Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors.
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- Nano Convergence, 2018, v. 5, n. 1, p. 1, doi. 10.1186/s40580-018-0135-4
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Active Microwave Metamaterials Incorporating Ideal Gain Devices.
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- Materials (1996-1944), 2011, v. 4, n. 1, p. 73, doi. 10.3390/ma4010073
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Delay Elements Suitable for CMOS Ring Oscillators.
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- Journal of Engineering Science & Technology Review, 2016, v. 9, n. 4, p. 98
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Development of a Single-Phase PWM AC Controller.
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- Pertanika Journal of Science & Technology, 2008, v. 16, n. 2, p. 119
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The Feigenbaum-Sharkovskii-Magnitskii scenario of transition to chaos in a circuit with a tunnel diode.
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- Technical Physics, 2015, v. 60, n. 8, p. 1252, doi. 10.1134/S1063784215080101
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Influence of capacitor properties on irregular ignition of discharge circuit using a thyristor.
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- Electrical Engineering in Japan, 2001, v. 137, n. 2, p. 1, doi. 10.1002/eej.1082
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Designing LC VCOs Using Capacitive Degeneration Techniques.
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- International Journal of High Speed Electronics & Systems, 2005, v. 15, n. 2, p. 65, doi. 10.1142/S0129156405003223
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Analysis of negative-resistance characteristics in active capacitance circuit.
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- Microwave & Optical Technology Letters, 2004, v. 42, n. 3, p. 240, doi. 10.1002/mop.20264
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Electrical Switching Behaviour in Lead Phosphovanadate Glasses.
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- Turkish Journal of Physics, 2006, v. 30, n. 3, p. 189
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Peculiarities of neutron irradiation influence on GaP light-emitting structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 3, p. 276
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An Improved CMOS GHz-Range Gilbert Mixer.
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- Majlesi Journal of Telecommunication Devices, 2015, v. 4, n. 4, p. 113
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A NEW TUNABLE FLOATING CMOS FDNR AND ELLIPTIC FILTER APPLICATIONS.
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- Journal of Circuits, Systems & Computers, 2010, v. 19, n. 8, p. 1641, doi. 10.1142/S0218126610006967
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A Low Voltage Active Circuit for Realizing Floating Inductance, Capacitance, Frequency Dependent Negative Resistances and Admittance Converter.
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- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2011, v. 36, n. 7, p. 1313, doi. 10.1007/s13369-011-0107-z
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Absolute negative resistance and multivaluedness on current-voltage characteristics of tunnel diodes.
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- Semiconductors, 2009, v. 43, n. 4, p. 495, doi. 10.1134/S1063782609040162
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Negative Resistance Effect and Charge Transfer Mechanisms in the Ion Beam Deposited Diamond Like Carbon Superlattices.
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- Materials Science / Medziagotyra, 2011, v. 17, n. 1, p. 3
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Encoding Odorant Identity by Spiking Packets of Rate-Invariant Neurons in Awake Mice.
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- PLoS ONE, 2012, v. 7, n. 1, p. 1, doi. 10.1371/journal.pone.0030155
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