Works matching DE "NARROW gap semiconductors"

Results: 320

High Thermoelectric Performance of a Novel Layered Structure CdSbX3 (X = S and Se): High Thermoelectric Performance of a Novel Layered Structure CdSbX3 (X = S and Se): M. Haouam et al.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 1, p. 389, doi. 10.1007/s11664-024-11510-1

By:

Haouam, Marwa;
Hamidani, Ali;
Rebah, Nor;
Zanat, Kamel

Publication type:

Article

High Thermoelectric Performance of Ge–Sb–Te Nanosheets: A Density Functional Study.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3438, doi. 10.1007/s11664-024-11134-5

By:

Tian, Jing;
Ma, Weiliang;
Record, Marie-Christine;
Boulet, Pascal

Publication type:

Article

Add a Pinch of Tetrel: The Transformation of a Centrosymmetric Metal into a Nonsymmorphic and Chiral Semiconductor.

Published in:

Chemistry - A European Journal, 2022, v. 28, n. 9, p. 1, doi. 10.1002/chem.202104319

By:

Lee, Shannon J.;
Viswanathan, Gayatri;
Carnahan, Scott L.;
Harmer, Colin P.;
Akopov, Georgiy;
Rossini, Aaron J.;
Miller, Gordon J.;
Kovnir, Kirill

Publication type:

Article

New Noncentrosymmetric Tetrel Pnictides Composed of Square‐Planar Gold(I) with Peculiar Bonding.

Published in:

Chemistry - A European Journal, 2021, v. 27, n. 26, p. 7383, doi. 10.1002/chem.202005312

By:

Lee, Shannon J.;
Won, Juyeon;
Wang, Lin‐Lin;
Jing, Dapeng;
Harmer, Colin P.;
Mark, Justin;
Akopov, Georgiy;
Kovnir, Kirill

Publication type:

Article

Advances in ZnO-BiO based varistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4782, doi. 10.1007/s10854-015-3093-1

By:

Li, Jianying;
Li, Shengtao;
Cheng, Pengfei;
Alim, Mohammad

Publication type:

Article

Phonon phase stability, structural, mechanical, electronic, and thermoelectric properties of two new semiconducting quaternary Heusler alloys CoCuZrZ (Z = Ge and Sn).

Published in:

International Journal of Energy Research, 2020, v. 44, n. 7, p. 5936, doi. 10.1002/er.5373

By:

Mushtaq, Muhammad;
Sattar, Muhammad Atiff;
Dar, Sajad Ahmad

Publication type:

Article

An Atomically Thin Air‐Stable Narrow‐Gap Semiconductor Cr2S3 for Broadband Photodetection with High Responsivity.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000962

By:

Xie, Liu;
Wang, Jun;
Li, Jie;
Li, Chang;
Zhang, Yan;
Zhu, Benpeng;
Guo, Yuzheng;
Wang, Zhongchang;
Zhang, Kai

Publication type:

Article

New narrow-band-gap thiazoloquinoxaline-containing polymers and their use in solar cells with bulk heterojunction.

Published in:

Doklady Chemistry, 2016, v. 471, n. 2, p. 373, doi. 10.1134/S001250081611001X

By:

Keshtov, M.;
Kuklin, S.;
Konstantinov, I.;
Krayushkin, M.;
Radychev, N.;
Khokhlov, A.

Publication type:

Article

New thienofluoroanthenes as building blocks for optoelectronic applications.

Published in:

Doklady Chemistry, 2015, v. 461, n. 1, p. 75, doi. 10.1134/S0012500815030040

By:

Keshtov, M.;
Godovsky, D.;
Kuklin, S.;
Zou, Y.;
Chen, F.;
Khokhlov, A.

Publication type:

Article

Clinical relevance of narrow-band imaging in flexible cystoscopy: the DaBlaCa-7 study.

Published in:

Scandinavian Journal of Urology (Taylor & Francis Ltd), 2017, v. 51, n. 2, p. 120, doi. 10.1080/21681805.2017.1295101

By:

Drejer, Ditte;
Béji, Sami;
Munk Nielsen, Anna;
Høyer, Søren;
Wrist Lam, Gitte;
Jensen, Jørgen B.

Publication type:

Article

Magnifying Endoscopy with Narrow Band Imaging to Determine the Extent of Resection in Transoral Robotic Surgery of Oropharyngeal Cancer.

Published in:

2014

By:

Ichiro Tateya;
Seiji Ishikawa;
Shuko Morita;
Hiroyuki Ito;
Tatsunori Sakamoto;
Toshinori Murayama;
Yo Kishimoto;
Tomomasa Hayashi;
Makiko Funakoshi;
Shigeru Hirano;
Morimasa Kitamura;
Mami Morita;
Manabu Muto;
Juichi Ito

Publication type:

Case Study

Spin gapless semiconductor like Ti2MnAl film as a new candidate for spintronics application.

Published in:

Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 11, p. 641, doi. 10.1002/pssr.201510340

By:

FENg, Wuwei;
Fu, Xiao;
Wan, Caihua;
Yuan, Zhonghui;
Han, XiufENg;
Quang, NguyEN Van;
Cho, Sunglae

Publication type:

Article

High-resolution airborne imaging DOAS measurements of NO2 above Bucharest during AROMAT.

Published in:

Atmospheric Measurement Techniques, 2017, v. 10, n. 5, p. 1831, doi. 10.5194/amt-10-1831-2017

By:

Meier, Andreas Carlos;
Schönhardt, Anja;
Bösch, Tim;
Richter, Andreas;
Seyler, André;
Ruhtz, Thomas;
Constantin, Daniel-Eduard;
Shaiganfar, Reza;
Wagner, Thomas;
Merlaud, Alexis;
Van Roozendael, Michel;
Belegante, Livio;
Nicolae, Doina;
Georgescu, Lucian;
Burrows, John Philip

Publication type:

Article

DFT investigations on electronic and optical properties of (In, N, In–N) doped graphene.

Published in:

Modern Physics Letters B, 2021, v. 35, n. 22, p. 1, doi. 10.1142/S0217984921503462

By:

Zhang, Wenchao;
Guan, Feng;
Zhao, Kuo;
Jiang, Min;
He, Xunjun;
Wang, Yi

Publication type:

Article

Effects of strain on the half-metallicity and spin gapless feature of Ti2 YSi ( Y = Fe, Co) alloys.

Published in:

Modern Physics Letters B, 2018, v. 32, n. 14, p. -1, doi. 10.1142/S0217984918501531

By:

Fan, Xiaoguang;
Li, Jincheng;
Jin, Yingjiu

Publication type:

Article

Parametric excitation of optical phonons in weakly polar narrow band gap magnetized semiconductor plasmas.

Published in:

Modern Physics Letters B, 2017, v. 31, n. 31, p. -1, doi. 10.1142/S0217984917502943

By:

Sandeep;
Dahiya, Sunita;
Singh, Navneet

Publication type:

Article

Unusual Kinetic Properties of Usual Heusler Alloys.

Published in:

Journal of Superconductivity & Novel Magnetism, 2022, v. 35, n. 8, p. 2153, doi. 10.1007/s10948-022-06342-1

By:

Marchenkov, V. V.;
Irkhin, V. Yu.;
Semiannikova, A. A.

Publication type:

Article

Theoretical Investigations of Magnetic Properties and Mechanical Stability of Quaternary Heusler Compounds FeYCrZ (Z = Al, Ga, Ge, and Si): a Spin Gapless Semiconductor.

Published in:

Journal of Superconductivity & Novel Magnetism, 2022, v. 35, n. 1, p. 223, doi. 10.1007/s10948-021-06027-1

By:

Zafar, M.;
Abbas, Tania;
Shakil, M.;
Gillani, S. S. A.;
Rizwan, M.;
Arshad, Hafsa;
Ahmed, Shabbir

Publication type:

Article

Ab initio Calculations on the Electronic Properties of Fe-doped LiNbO3 Through Modified Becke-Johnson Exchange Potential.

Published in:

Journal of Superconductivity & Novel Magnetism, 2021, v. 34, n. 7, p. 1933, doi. 10.1007/s10948-021-05886-y

By:

Ait brahim, I.;
Bekkioui, N.;
Lamouri, R.;
Tahiri, M.;
Ez-Zahraouy, H.

Publication type:

Article

First-Principles Investigation of Ti2.25Co0.75Si and Ti2.25Co0.75Si0.5X0.5 (X = As and Sb) Heusler Alloys: Spin-Polarized Electronic, Magnetic, and Mechanical Properties.

Published in:

Journal of Superconductivity & Novel Magnetism, 2021, v. 34, n. 1, p. 285, doi. 10.1007/s10948-020-05758-x

By:

Wang, Yue;
Liu, Yuan;
Cheng, Haolei;
Wang, Liying

Publication type:

Article

Structural, Elastic, Electronic, and Magnetic Properties of a New Full-Heusler Alloy Mn2MgGe: First-Principles Calculations.

Published in:

Journal of Superconductivity & Novel Magnetism, 2019, v. 32, n. 9, p. 3001, doi. 10.1007/s10948-019-5086-4

By:

Wan, Huijun;
Yao, Weibo;
Zeng, Dongwen;
Zhou, Jie;
Ruan, Wen;
Liu, Lina;
Wen, Yufeng

Publication type:

Article

First-Principle Studies of Ferrimagnetic Double Perovskite Ca2FeMoO6 Compound.

Published in:

Journal of Superconductivity & Novel Magnetism, 2019, v. 32, n. 9, p. 2913, doi. 10.1007/s10948-019-5064-x

By:

Sebaa, O.;
Zaoui, Y.;
Obodo, K. O.;
Beldi, L.;
Bouhafs, B.

Publication type:

Article

Influence of L2B Disorder on the Spin-Gapless Semiconductor Character in Quaternary Heusler Alloys CoFeMnSi and CoFeVSi.

Published in:

Journal of Superconductivity & Novel Magnetism, 2016, v. 29, n. 12, p. 3181, doi. 10.1007/s10948-016-3721-x

By:

Ren, Zhi;
Zhao, Yiming;
Jiao, Jian;
Zheng, Ning;
Liu, Heyan;
Li, Songtao

Publication type:

Article

Investigations on Cmc21-Si2P2X structures and physical properties by first-principles calculations.

Published in:

Condensed Matter Physics, 2021, v. 24, n. 4, p. 1, doi. 10.5488/CMP.24.43602

By:

Yang, R.;
Gao, X.;
Wu, F.;
Wei, Q.;
Xue, M.

Publication type:

Article

Structural, magnetic, and optoelectronic properties of new ferromagnetic semiconductors Cd0.75Os0.25S and Cd0.75Ir0.25S: Insight from DFT computations.

Published in:

Optical & Quantum Electronics, 2022, v. 54, n. 11, p. 1, doi. 10.1007/s11082-022-04073-0

By:

Boudjelal, M.;
Batouche, M.;
Seddik, T.;
Antri, T.;
Badi, Nacer;
Bentata, S.;
Belfedal, A.;
Bouadjemi, B.;
Khenata, R.;
Bouhemadou, A.;
Bin Omran, S.

Publication type:

Article

Theoretical investigations on electronic and optical properties of half heusler alloy,FeNbSb for opto-electronic applications.

Published in:

Optical & Quantum Electronics, 2022, v. 54, n. 11, p. 1, doi. 10.1007/s11082-022-03919-x

By:

Kumar, Arvind;
Jharwal, Swati;
Prajapati, Brijmohan;
Kumar, Manish;
Singh, V. P.;
Singh, Rishi P.

Publication type:

Article

First principles study in the electronic structures and optical properties of chalcogenide-doped AgInS2.

Published in:

Optical & Quantum Electronics, 2021, v. 53, n. 8, p. 1, doi. 10.1007/s11082-021-03115-3

By:

Sukkabot, Worasak

Publication type:

Article

First-principles calculations of electronic and optical properties of CuTaS3 semiconductor.

Published in:

Optical & Quantum Electronics, 2021, v. 53, n. 8, p. 1, doi. 10.1007/s11082-021-03050-3

By:

Al Alwash, L.;
Bakhshayeshi, A.;
Motie, I.

Publication type:

Article

Study on mechanically alloyed tin telluride screen-printed films for optoelectronic device applications.

Published in:

Optical & Quantum Electronics, 2019, v. 51, n. 5, p. N.PAG, doi. 10.1007/s11082-019-1843-7

By:

Kumar, Vipin;
Sharma, Kapil;
Sharma, D. K.;
Masih, Vandana Grace

Publication type:

Article

Group-theoretical study of band nodes and the emanating nodal structures in crystalline materials.

Published in:

Quantum Frontiers, 2024, v. 3, n. 1, p. 1, doi. 10.1007/s44214-024-00060-6

By:

Tang, Feng;
Wan, Xiangang

Publication type:

Article

Resistivity saturation in Kondo insulators.

Published in:

Communications Physics, 2021, v. 4, n. 1, p. 1, doi. 10.1038/s42005-021-00723-z

By:

Pickem, Matthias;
Maggio, Emanuele;
Tomczak, Jan M.

Publication type:

Article

Manipulating topological phase transition by strain.

Published in:

Acta Crystallographica Section C: Structural Chemistry, 2014, v. 70, n. 2, p. 118, doi. 10.1107/S2053229613032336

By:

Liu, Junwei;
Xu, Yong;
Wu, Jian;
Gu, Bing-Lin;
Zhang, S. B.;
Duan, Wenhui

Publication type:

Article

Automated instrumentation for nonequilibrium capacitance-voltage measurements at a semiconductor-electrolyte interface.

Published in:

Instruments & Experimental Techniques, 2017, v. 60, n. 1, p. 119, doi. 10.1134/S0020441216060014

By:

Frolov, D.;
Zubkov, V.

Publication type:

Article

Study on the Photocathodic Protection of Q235 Steel by CdIn2S4 Sensitized TiO2 Composite in Splash Zone.

Published in:

Catalysts (2073-4344), 2019, v. 9, n. 12, p. 1067, doi. 10.3390/catal9121067

By:

Ma, Zheng;
Ma, Xiumin;
Wang, Xiutong;
Liu, Nazhen;
Liu, Xuehui;
Hou, Baorong

Publication type:

Article

High‐Temperature Thermoelectricity in Narrow‐Gap Semiconductor SmS with Strong Electron‐Hole Asymmetry.

Published in:

Advanced Energy Materials, 2023, v. 13, n. 12, p. 1, doi. 10.1002/aenm.202203519

By:

Liao, Huijun;
Zhou, Zizhen;
Zheng, Sikang;
Huang, Yuling;
Han, Guang;
Wang, Guoyu;
Huang, Zhengyong;
Lu, Xu;
Li, Jian;
Zhou, Xiaoyuan

Publication type:

Article

Impurity states and electron transport in gapless semiconductors.

Published in:

Advances in Physics, 1985, v. 34, n. 1, p. 43, doi. 10.1080/00018738500101731

By:

Tsidilkovski, I.M.;
Harus, G.I.;
Shflushinina, N.G.

Publication type:

Article

ASTRONIRCAM-the infrared camera-spectrograph for the 2.5-m telescope of SAI Caucasian observatory.

Published in:

Astrophysical Bulletin, 2017, v. 72, n. 3, p. 349, doi. 10.1134/S1990341317030245

By:

Nadjip, A.;
Tatarnikov, A.;
Toomey, D.;
Shatsky, N.;
Cherepashchuk, A.;
Lamzin, S.;
Belinski, A.

Publication type:

Article

Development of gap sensing system for narrow gap laser welding.

Published in:

Welding International, 2016, v. 30, n. 10, p. 745, doi. 10.1080/09507116.2016.1142195

By:

Yamazaki, Yosuke;
Abe, Yohei;
Hioki, Yukio;
Nakatani, Mitsuyoshi;
Kitagawa, Akikazu;
Nakata, Kazuhiro

Publication type:

Article

Calculation of the parameters of narrow gap pulsed arc welding of the root layer.

Published in:

Welding International, 2014, v. 28, n. 7, p. 547, doi. 10.1080/09507116.2013.840045

By:

Krampit, A.G.

Publication type:

Article

Welding with double modulation of the main welding parameters.

Published in:

Welding International, 2012, v. 26, n. 11, p. 867, doi. 10.1080/09507116.2011.653171

By:

Krampit, A.K.

Publication type:

Article

Calculation of the Resonance States of Coulomb Acceptors in Zero-Gap Semiconductors.

Published in:

Semiconductors, 2021, v. 55, n. 6, p. 537, doi. 10.1134/S1063782621050195

By:

Zholudev, M. S.;
Rumyantsev, V. V.;
Morozov, S. V.

Publication type:

Article

Floquet Engineering of Structures Based on Gapless Semiconductors.

Published in:

Semiconductors, 2020, v. 54, n. 12, p. 1734, doi. 10.1134/S1063782620120143

By:

Kibis, O. V.;
Boev, M. V.;
Kovalev, V. M.;
Sinitskyi, R. E.;
Shelykh, I. A.

Publication type:

Article

Topological Electronic States on the Surface of a Strained Gapless Semiconductor.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1867, doi. 10.1134/S1063782619140100

By:

Kibis, O. V.;
Kyriienko, O.;
Shelykh, I. A.

Publication type:

Article

THz Stimulated Emission from Simple Superlattice in Positive Differential Conductivity Region.

Published in:

Semiconductors, 2018, v. 52, n. 4, p. 431, doi. 10.1134/S1063782618040048

By:

Andronov, A. A.;
Ikonnikov, A. V.;
Maremianin, K. V.;
Pozdnjakova, V. I.;
Nozdrin, Y. N.;
Marmalyuk, A. A.;
Padalitsa, A. A.;
Ladugin, M. A.;
Belyakov, V. A.;
Ladenkov, I. V.;
Fefelov, A. G.

Publication type:

Article

Impurity-induced photoconductivity of narrow-gap Cadmium-Mercury-Telluride structures.

Published in:

Semiconductors, 2015, v. 49, n. 12, p. 1605, doi. 10.1134/S1063782615120106

By:

Kozlov, D.;
Rumyantsev, V.;
Morozov, S.;
Kadykov, A.;
Varavin, V.;
Mikhailov, N.;
Dvorestky, S.;
Gavrilenko, V.;
Teppe, F.

Publication type:

Article

Long-wavelength injection lasers based on PbSnSe alloys and their use in solid-state spectroscopy.

Published in:

Semiconductors, 2015, v. 49, n. 12, p. 1623, doi. 10.1134/S1063782615120118

By:

Maremyanin, K.;
Ikonnikov, A.;
Antonov, A.;
Rumyantsev, V.;
Morozov, S.;
Bovkun, L.;
Umbetalieva, K.;
Chizhevskiy, E.;
Zasavitskiy, I.;
Gavrilenko, V.

Publication type:

Article

Temperature dependence of the carrier lifetime in narrow-gap CdHgTe solid solutions: Radiative recombination.

Published in:

Semiconductors, 2015, v. 49, n. 9, p. 1170, doi. 10.1134/S1063782615090067

By:

Bazhenov, N.;
Mynbaev, K.;
Zegrya, G.

Publication type:

Article

Temperature dependence of the carrier lifetime in CdHgTe narrow-gap solid solutions with consideration for Auger processes.

Published in:

Semiconductors, 2015, v. 49, n. 4, p. 432, doi. 10.1134/S1063782615040065

By:

Bazhenov, N.;
Mynbaev, K.;
Zegrya, G.

Publication type:

Article

On statistically distributed inhomogeneities according to data on transverse magnetoresistance for the case of atmospheric and uniform pressure in narrow-gap n-InSb and n-CdSnAs semiconductors.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 839, doi. 10.1134/S1063782614070069

By:

Gadjialiev, M.;
Daunov, M.;
Kamilov, I.;
Musaev, A.

Publication type:

Article

Magnetoabsorption in narrow-gap HgCdTe epitaxial layers in the terahertz range.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1545, doi. 10.1134/S1063782613120099

By:

Ikonnikov, A. V.;
Zholudev, M. S.;
Gavrilenko, V. I.;
Mikhailov, N. N.;
Dvoretskii, S. A.

Publication type:

Article