Works matching DE "MOS integrated circuits"
Results: 26
Physical Analysis of FLIMOSFET Interelectrode Capacitances.
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- Journal of Active & Passive Electronic Devices, 2013, v. 8, n. 2/3, p. 101
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- Article
Low Voltage Floating Gate MOS Transistor Based Differential Voltage Squarer.
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- ISRN Otolaryngology, 2014, p. 1, doi. 10.1155/2014/357184
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Modified Level Restorers Using Current Sink and Current Source Inverter Structures for BBL-PT Full Adder.
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- Radioengineering, 2012, v. 21, n. 4, p. 1279
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Current-Mode Biquad Filters Employing Single FDCCII.
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- Radioengineering, 2012, v. 21, n. 4, p. 1269
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- Article
Análisis, modelado y simulación del ruido flicker en transistores MOS.
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- Acta Universitaria, 2013, v. 23, n. 5, p. 20, doi. 10.15174/au.2013.478
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- Article
A Testing Approach for MOS Circuit Using Single-Photon Detectors Under High Magnetic Fields.
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- Journal of Low Temperature Physics, 2013, v. 170, n. 5/6, p. 403, doi. 10.1007/s10909-012-0684-6
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- Article
Novel First Order Current Mode MOS-C Phase Shifters.
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- Electronics & Electrical Engineering, 2018, v. 24, n. 1, p. 31, doi. 10.5755/j01.eie.24.1.20157
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- Article
Influences of Co-60 gamma-ray irradiation on electrical characteristics of AlO MOS capacitors.
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- Journal of Radioanalytical & Nuclear Chemistry, 2014, v. 302, n. 1, p. 425, doi. 10.1007/s10967-014-3295-7
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New Proposal for MCML Based Three-Input Logic Implementation.
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- VLSI Design, 2016, p. 1, doi. 10.1155/2016/8712768
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0.5-V bulk-driven OTA and its applications.
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- International Journal of Circuit Theory & Applications, 2015, v. 43, n. 2, p. 187, doi. 10.1002/cta.1932
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- Article
New SRAM design using body bias technique for low-power and high-speed applications.
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- International Journal of Circuit Theory & Applications, 2014, v. 42, n. 11, p. 1189, doi. 10.1002/cta.1914
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- Article
Electrical properties of MOS diodes In/TiO/ p-CdTe.
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- Semiconductors, 2014, v. 48, n. 4, p. 487, doi. 10.1134/S1063782614040071
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Model of the behavior of MOS structures under ionizing irradiation.
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- Semiconductors, 2014, v. 48, n. 4, p. 505, doi. 10.1134/S1063782614040046
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- Article
Electrical properties of MOS capacitors formed by PEALD grown AlO on silicon.
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- Semiconductors, 2014, v. 48, n. 4, p. 497, doi. 10.1134/S1063782614040204
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- Article
EMI susceptibility of DTMOS opamps.
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- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 2, p. 69, doi. 10.1049/el.2012.3941
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An Influence of Silicon Substrate Parameters on a Responsivity of MOSFET-Based Terahertz Detectors.
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- Acta Physica Polonica: A, 2016, v. 130, n. 5, p. 1193, doi. 10.12693/APhysPolA.130.1193
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Fully Distributed Analysis of MOS Transistor at Millimeter-Wave Band, Based on Matrix-Functions of the Three Line Active Transmission Lines Model.
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- Applied Computational Electromagnetics Society Journal, 2016, v. 31, n. 11, p. 1330
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- Article
Extraction of Scalable Electrical Model for HV (600/800 V) MOS Transistors.
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- IETE Journal of Research, 2012, v. 58, n. 3, p. 237, doi. 10.4103/0377-2063.97333
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Self-heating Parameter Extraction of Power Metal-oxide-silicon Field Effect Transistor Based on Transient Drain Current Measurement.
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- IETE Journal of Research, 2012, v. 58, n. 3, p. 230, doi. 10.4103/0377-2063.97331
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- Article
RF Compact Modeling of High-voltage MOSFETs.
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- IETE Journal of Research, 2012, v. 58, n. 3, p. 214, doi. 10.4103/0377-2063.97329
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- Article
Aging Model for a 40 V Nch MOS, Based on an Innovative Approach.
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- IETE Journal of Research, 2012, v. 58, n. 3, p. 191, doi. 10.4103/0377-2063.97324
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A Hybrid Verilog-A and Equation-defined Subcircuit Approach to MOS Switched Current Analog Cell Simulation.
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- IETE Journal of Research, 2012, v. 58, n. 3, p. 181, doi. 10.4103/0377-2063.97323
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- Article
Three-dimensional visual comfort assessment via preference learning.
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- Journal of Electronic Imaging, 2015, v. 24, n. 4, p. 1, doi. 10.1117/1.JEI.24.4.043002
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- Article
Analytic Models of CMOS Logic in Various Regimes.
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- Serbian Journal of Electrical Engineering, 2014, v. 11, n. 2, p. 269, doi. 10.2298/SJEE140106022D
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- Article
A 2/3 Dual-Modulus Prescaler Using Complementary Clocking NMOS-Like Blocks.
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- Journal of Circuits, Systems & Computers, 2015, v. 24, n. 7, p. -1, doi. 10.1142/S0218126615501091
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- Article
A LOW-POWER LOW-VOLTAGE 6-BIT 1.33 GS/s FULLY MCML ALL NMOS FLASH ADC WITHOUT A FRONT-END T/H.
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- Journal of Circuits, Systems & Computers, 2013, v. 22, n. 8, p. -1, doi. 10.1142/S0218126613500746
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- Article