Improving On-state current and Ambipolarity of TFET using Gate-Drain and Gate Dielectric Engineering.
- Published in:
- Indian Journal of Pure & Applied Physics, 2024, v. 62, n. 7, p. 607, doi. 10.56042/ijpap.v62i7.7715
- By:
- Publication type:
- Article
Works matching DE "MOS Technology (Company)"
Results: 1
1