Works matching DE "MOLECULAR beam epitaxy"
Results: 2134
Mechanisms of Current Formation in nBn Structures Based on HgCdTe with a Superlattice in the Barrier Region.
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- Journal of Communications Technology & Electronics, 2024, v. 69, n. 4, p. 231, doi. 10.1134/S1064226924700372
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- Article
Effective Band Gap of CdHgTe Heteroepitaxial Structures Grown by Molecular Beam and Liquid Phase Epitaxy.
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- Journal of Communications Technology & Electronics, 2024, v. 69, n. 4, p. 211, doi. 10.1134/S1064226924700438
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- Article
Structural and Optical Properties of InAs/GaSb Superlattices Obtained by Molecular Beam Epitaxy.
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- Journal of Communications Technology & Electronics, 2024, v. 69, n. 4, p. 182, doi. 10.1134/S1064226924700414
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- Article
Electronic Transport Properties of Sn-Doped β-Ga<sub>2</sub>O<sub>3</sub> (010) Thin Films Grown by MBE Homoepitaxial Growth.
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- Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 244, doi. 10.16553/j.cnki.issn1000-985x.2024.0279
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Influence of the Annealing Temperature on the Properties of {ZnO/CdO} 30 Superlattices Deposited on c -Plane Al 2 O 3 Substrate by MBE.
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- Crystals (2073-4352), 2025, v. 15, n. 2, p. 174, doi. 10.3390/cryst15020174
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- Article
Fabrication of Novel Nanoarchitecture For epi-IZO Thin Films on.
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- Surface Engineering, 2004, v. 20, n. 3, p. 205, doi. 10.1179/026708404225015040
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- Article
Organic Electronics: Stable Alignment of Tautomers at Room Temperature in Porphyrin 2D Layers (Adv. Funct. Mater. 7/2014).
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- Advanced Functional Materials, 2014, v. 24, n. 7, p. 957, doi. 10.1002/adfm.201470043
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- Article
The Impacts of Cation Stoichiometry and Substrate Surface Quality on Nucleation, Structure, Defect Formation, and Intermixing in Complex Oxide Heteroepitaxy-LaCrO<sub>3</sub> on SrTiO<sub>3</sub>(001).
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- Advanced Functional Materials, 2013, v. 23, n. 23, p. 2953, doi. 10.1002/adfm.201202655
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- Article
Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO film.
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- Journal of Materials Science, 2016, v. 51, n. 17, p. 8233, doi. 10.1007/s10853-016-0098-y
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- Article
Main scattering mechanisms in InAs/GaAs multi-quantum-well: a new approach by the global optimization method.
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- Journal of Materials Science, 2016, v. 51, n. 3, p. 1333, doi. 10.1007/s10853-015-9451-9
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- Article
Effect of post-annealing process on the optical properties of lateral composition-modulated GaInP structure grown by molecular beam epitaxy.
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- Journal of Materials Science, 2014, v. 49, n. 3, p. 1034, doi. 10.1007/s10853-013-7780-0
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- Article
Photoluminescence study of GaAs thin films and nanowires grown on Si(111).
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- Journal of Materials Science, 2013, v. 48, n. 4, p. 1794, doi. 10.1007/s10853-012-6941-x
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- Article
Interface structure of deposited GaSb on GaAs (001): Monte Carlo simulation and experimental study.
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- Journal of Materials Science, 2012, v. 47, n. 4, p. 1684, doi. 10.1007/s10853-011-6018-2
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- Article
Atomic structure and reactivity of ferromagnetic Fe deposited on Si(001).
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- Journal of Materials Science, 2012, v. 47, n. 4, p. 1614, doi. 10.1007/s10853-011-5963-0
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- Article
Photovoltaic properties and photoconductivity in multilayer Ge/Si heterostructures with Ge nanoislands.
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- Journal of Materials Science, 2011, v. 46, n. 17, p. 5737, doi. 10.1007/s10853-011-5528-2
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Aberration corrected scanning transmission electron microscopy and electron energy loss spectroscopy studies of epitaxial Fe/MgO/(001)Ge heterostructures.
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- Journal of Materials Science, 2011, v. 46, n. 12, p. 4157, doi. 10.1007/s10853-011-5248-7
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Oxygen partial pressure dependence of the properties of MgZnO thin films during annealing.
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- Journal of Materials Science, 2010, v. 45, n. 22, p. 6206, doi. 10.1007/s10853-010-4714-y
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- Article
Room temperature magnetic exchange coupling in multiferroic BaTiO<sub>3</sub>/CoFe<sub>2</sub>O<sub>4</sub> magnetoelectric superlattice.
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- Journal of Materials Science, 2009, v. 44, n. 19, p. 5143, doi. 10.1007/s10853-009-3512-x
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Systematic study on the influence of growth parameters on island density exponent, size distribution and scaling behaviour.
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- Journal of Materials Science, 2007, v. 42, n. 16, p. 6762, doi. 10.1007/s10853-006-1461-1
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Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine.
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- Journal of Materials Science, 2006, v. 41, n. 24, p. 8265, doi. 10.1007/s10853-006-0998-3
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Bonding at copper–alumina interfaces established by different surface treatments: a critical review.
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- Journal of Materials Science, 2006, v. 41, n. 16, p. 5161, doi. 10.1007/s10853-006-0073-0
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Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure.
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- 2006
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- Letter
Atomic arrangements of a CuAu-I type ordered structure in strained In<sub> x</sub>Ga<sub>1 − x</sub>As/In<sub> y</sub>Al<sub>1 − y</sub>As multiple quantum wells.
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- Journal of Materials Science, 2005, v. 40, n. 14, p. 3843, doi. 10.1007/s10853-005-2557-8
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Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique.
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- Journal of Materials Science, 2004, v. 39, n. 7, p. 2637, doi. 10.1023/B:JMSC.0000020047.61719.50
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Temperature dependence of Raman scattering in GeSn films.
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- Journal of Raman Spectroscopy, 2020, v. 51, n. 7, p. 1092, doi. 10.1002/jrs.5874
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Phonon characteristics of Si‐doped InAs grown by gas‐source molecular beam epitaxy.
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- Journal of Raman Spectroscopy, 2019, v. 50, n. 11, p. 1731, doi. 10.1002/jrs.5703
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Features of polarized Raman spectra for homogeneous and non-homogeneous compressively strained Ge<sub>1− y</sub>Sn<sub>y</sub> alloys.
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- Journal of Raman Spectroscopy, 2017, v. 48, n. 7, p. 993, doi. 10.1002/jrs.5160
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The improvement of InAs/GaAs quantum dot properties capped by Graphene.
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- Journal of Raman Spectroscopy, 2013, v. 44, n. 11, p. 1529, doi. 10.1002/jrs.4382
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- Article
In Situ TEM Study and Control of Octahedral Units' Migration in Rutile TiO<sub>2</sub>.
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- Microscopy & Microanalysis, 2024, v. 30, p. 1, doi. 10.1093/mam/ozae044.799
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- Article
Connecting Medium Range Ordering to Topological Properties of Amorphous Bi<sub>2</sub>Se<sub>3</sub>.
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- Microscopy & Microanalysis, 2024, v. 30, p. 1, doi. 10.1093/mam/ozae044.770
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Polarity Switching and Josephson Junction Interfaces Investigated by Multislice Ptychography.
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- Microscopy & Microanalysis, 2024, v. 30, p. 1, doi. 10.1093/mam/ozae044.759
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- Article
Spatial, Spectral and Time Resolution: Tackling the Challenges of Multidimensional Luminescence Data Analysis with LumiSpy.
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- Microscopy & Microanalysis, 2024, v. 30, p. 1, doi. 10.1093/mam/ozae044.006
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- Article
Precise control of atoms with MBE: from semiconductors to complex oxides.
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- Europhysics News, 2020, v. 51, n. 4, p. 21, doi. 10.1051/epn/2020403
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- Article
Structural characterization of iron silicide nanoclusters in Si/FeSi heterosystems using magneto-optic ellipsometry.
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- Journal of Structural Chemistry, 2010, v. 51, p. 100, doi. 10.1007/s10947-010-0196-7
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- Article
Morphology and optical properties of single- and multi-layer InAs quantum dots.
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- Journal of Electron Microscopy, 2010, v. 59, n. S1, p. S149, doi. 10.1093/jmicro/dfq053
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Performance assessment of a triple-junction solar cell with 1.0 eV GaAsBi absorber.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03865-x
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- Article
Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03844-2
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- Article
Growth, structure, and morphology of van der Waals epitaxy Cr<sub>1+δ</sub>Te<sub>2</sub> films.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03791-y
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- Article
High-temperature superconductivity and its robustness against magnetic polarization in monolayer FeSe on EuTiO<sub>3</sub>.
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- NPJ Quantum Materials, 2021, v. 6, n. 1, p. 1, doi. 10.1038/s41535-021-00388-5
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Electronic structure and signature of Tomonaga–Luttinger liquid state in epitaxial CoSb<sub>1−x</sub> nanoribbons.
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- NPJ Quantum Materials, 2021, v. 6, n. 1, p. 1, doi. 10.1038/s41535-021-00381-y
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Mixed polytype/polymorph formation in InSe films grown by molecular beam epitaxy on GaAs(111)B.
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- NPJ 2D Materials & Applications, 2025, v. 9, n. 1, p. 1, doi. 10.1038/s41699-025-00535-7
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Unraveling the electronic structure and magnetic transition evolution across monolayer, bilayer, and multilayer ferromagnetic Fe<sub>3</sub>GeTe<sub>2</sub>.
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- NPJ 2D Materials & Applications, 2024, v. 8, n. 1, p. 1, doi. 10.1038/s41699-024-00499-0
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Large-scale epitaxy of two-dimensional van der Waals room-temperature ferromagnet Fe<sub>5</sub>GeTe<sub>2</sub>.
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- NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-022-00285-w
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Higher-indexed Moiré patterns and surface states of MoTe<sub>2</sub>/graphene heterostructure grown by molecular beam epitaxy.
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- NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-022-00321-9
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Structure and morphology of 2H-MoTe<sub>2</sub> monolayer on GaAs(111)B grown by molecular-beam epitaxy.
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- NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-022-00310-y
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- Article
Large-scale epitaxy of two-dimensional van der Waals room-temperature ferromagnet Fe<sub>5</sub>GeTe<sub>2</sub>.
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- NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-022-00285-w
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Dimensional crossover and band topology evolution in ultrathin semimetallic NiTe2 films.
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- NPJ 2D Materials & Applications, 2021, v. 5, n. 1, p. 1, doi. 10.1038/s41699-021-00218-z
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Robust ferromagnetism in wafer-scale monolayer and multilayer Fe<sub>3</sub>GeTe<sub>2</sub>.
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- NPJ 2D Materials & Applications, 2020, v. 4, n. 1, p. N.PAG, doi. 10.1038/s41699-020-00167-z
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Epitaxial La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> thin films on silicon with excellent magnetic and electric properties by combining physical and chemical methods.
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- Science & Technology of Advanced Materials, 2018, v. 19, n. 1, p. 702, doi. 10.1080/14686996.2018.1520590
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Thermoelectric La-doped SrTiO<sub>3</sub> epitaxial layers with single-crystal quality: from nano to micrometers.
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- Science & Technology of Advanced Materials, 2017, v. 18, n. 1, p. 430, doi. 10.1080/14686996.2017.1336055
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- Article