Works about MODULATION-doped field-effect transistors

Results: 1302

HEMT structures.

Published in:

Solid State Technology, 2000, v. 43, n. 12, p. 130

By:

Kelley, B.J.;
Dodrill, B.C.;
Lindemuth, J.R.;
Du, G.;
Meyer, J.R.

Publication type:

Article

Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs.

Published in:

Chemistry - A European Journal, 2024, v. 30, n. 27, p. 1, doi. 10.1002/chem.202304100

By:

Xu, Linling;
Guo, Hui;
Tao, Jiaqi;
Zavabeti, Ali;
Zhou, Yugang;
Zheng, Youdou;
Zhang, Rong;
Chen, Dunjun

Publication type:

Article

Self-Doping Cathode Interfacial Material Simultaneously Enabling High Electron Mobility and Powerful Work Function Tunability for High-Efficiency All-Solution-Processed Polymer Light-Emitting Diodes.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 26, p. n/a, doi. 10.1002/adfm.201700695

By:

Yin, Xiaojun;
Xie, Guohua;
Peng, Yuhao;
Wang, Bowen;
Chen, Tianhao;
Li, Shuqi;
Zhang, Wenhao;
Wang, Lei;
Yang, Chuluo

Publication type:

Article

Exploring the Leidenfrost Effect for the Deposition of High-Quality In2O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 22, p. n/a, doi. 10.1002/adfm.201606407

By:

Isakov, Ivan;
Faber, Hendrik;
Grell, Max;
Wyatt‐Moon, Gwenhivir;
Pliatsikas, Nikos;
Kehagias, Thomas;
Dimitrakopulos, George P.;
Patsalas, Panos P.;
Li, Ruipeng;
Anthopoulos, Thomas D.

Publication type:

Article

Recent advances in field-effect transistors for heavy metal ion detection.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 20, p. 15965, doi. 10.1007/s10854-022-08510-4

By:

Zhang, Gengming;
Yang, Shenglan;
Shi, Xiaofang;
Xu, Yunchao;
Jin, Chenxing;
Sun, Jia;
Yang, Junliang

Publication type:

Article

Influence of swift heavy ion irradiation on sensing properties of nickel-(NRs-Ni3HHTP2) metal-organic framework.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 14, p. 18657, doi. 10.1007/s10854-021-06353-z

By:

Ingle, Nikesh N.;
Shirsat, Sumedh;
Sayyad, Pasha;
Bodkhe, Gajanan;
Patil, Harshada;
Deshmukh, Megha;
Mahadik, Manasi;
Singh, Fouran;
Shirsat, Mahendra

Publication type:

Article

Rapid detection of biomolecules in a dielectric modulated GaN MOSHEMT.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 19, p. 16609, doi. 10.1007/s10854-020-04216-7

By:

Shaveta;
Ahmed, H. M. Maali;
Chaujar, Rishu

Publication type:

Article

Swanepoel method for AlInN/AlN HEMTs.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 13, p. 9969, doi. 10.1007/s10854-020-03590-6

By:

Akpinar, Omer;
Bilgili, Ahmet Kürsat;
Baskose, Umran Ceren;
Ozturk, Mustafa Kemal;
Ozcelik, Suleyman;
Ozbay, Ekmel

Publication type:

Article

Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 845, doi. 10.1007/s10854-016-5599-6

By:

Chang, Edward;
Hsiao, Chih-Jen;
Chang, Sheng-Po;
Chang, Shoou-Jinn;
Ha, Minh-Thien-Huu;
Nguyen, Hong-Quan;
Yu, Hung-Wei;
Wong, Yuen-Yee;
Liu, Chun-Kuan;
Maa, Jer-Shen

Publication type:

Article

Structural investigation of AlInN/AlN/GaN heterostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2852, doi. 10.1007/s10854-015-4101-1

By:

Tamer, M.;
Öztürk, M.;
Çörekçi, S.;
Baş, Y.;
Gültekin, A.;
Kurtuluş, G.;
Özçelik, S.;
Özbay, E.

Publication type:

Article

Irradiation effects on AlGaN HFET devices and GaN layers.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 64, doi. 10.1007/s10854-008-9589-1

By:

Gnanapragasam, Sonia;
Richter, Eberhard;
Brunner, Frank;
Denker, Andrea;
Lossy, Richard;
Mai, Michael;
Lenk, Friedrich;
Opitz-Coutureau, Jörg;
Pensl, Gerhard;
Schmidt, Jens;
Zeimer, Ute;
Wang, Liun;
Krishnan, Baskar;
Weyers, Markus;
Würfl, Jaochim;
Tränkle, Günther

Publication type:

Article

Buffer-trapping effects on current slump in AlGaN/GaN HEMTs.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 735, doi. 10.1007/s10854-007-9399-x

By:

Nakajima, Atsushi;
Horio, Kazushige

Publication type:

Article

High temperature assessment of nitride-based devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 189, doi. 10.1007/s10854-007-9298-1

By:

Cuerdo, R.;
Pedrós, J.;
Navarro, A.;
Braña, A. F.;
Pau, J. L.;
Muñoz, E.;
Calle, F.

Publication type:

Article

Active and buffer layers of GaN HEMT: ECV profiling and 2DEG calculation.

Published in:

Materials Research Innovations, 2020, v. 24, n. 7, p. 402, doi. 10.1080/14328917.2019.1688559

By:

Yakovlev, George;
Zubkov, Vasily;
Solomnikova, Anna

Publication type:

Article

Design of two-dimensional plane rapid expansion nozzles.

Published in:

ZAMM -- Journal of Applied Mathematics & Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik, 2003, v. 83, n. 1, p. 69, doi. 10.1002/zamm.200310006

By:

Heynatz, J. T.

Publication type:

Article

Strain-Stress Analysis of AlGaN/GaN Heterostructures With and Without an AlN Buffer and Interlayer.

Published in:

Strain, 2011, v. 47, p. 19, doi. 10.1111/j.1475-1305.2009.00730.x

By:

Öztürk, M. K.;
Altuntaş, H.;
Çörekçi, S.;
Hongbo, Y.;
Özçelik, S.;
Özbay, E.

Publication type:

Article

Experimental Evaluation of an X-band GaN High Efficiency Onboard SSPA for Deep Space Missions.

Published in:

Transactions of the Japan Society of Aeronautical & Space Sciences, Aerospace Technology Japan, 2014, v. 12, n. ists 29, p. 31

By:

Yuta KOBAYASHI;
Atsushi TOMIKI;
Shinichiro NARITA;
Shigeo KAWASAKI

Publication type:

Article

An Ameliorated Small-Signal Model Parameter Extraction Method for GaN HEMTs up to 110 GHz with Short-Test Structure.

Published in:

Active & Passive Electronic Components, 2023, p. 1, doi. 10.1155/2023/5589831

By:

Yuan, Qingyu;
Tang, Jinze;
Luan, Xiaodong;
Lin, Xin;
Chang, Fan;
Cheng, Jiali

Publication type:

Article

A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics.

Published in:

Active & Passive Electronic Components, 2019, p. 1, doi. 10.1155/2019/5135637

By:

Ryndin, Eugeny A.;
Al-Saman, Amgad A.;
Konoplev, Boris G.

Publication type:

Article

The Design and Thermal Reliability Analysis of a High-Efficiency K-Band MMIC Medium-Power Amplifier with Multiharmonic Matching.

Published in:

Active & Passive Electronic Components, 2016, p. 1, doi. 10.1155/2016/6295405

By:

Shang, Y.;
Xu, H.;
Mo, J.;
Wang, Z.;
Xu, X.;
Tu, Z.;
Zhang, X.;
Zheng, H.;
Chen, W.;
Yu, F.

Publication type:

Article

AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results.

Published in:

Active & Passive Electronic Components, 2011, p. 1, doi. 10.1155/2011/821305

By:

Taking, S.;
MacFarlane, D.;
Wasige, E.

Publication type:

Article

ON THE RELIABILITY OF ACCELERATED TESTING IN AlGaAs/InGaAs/GaAs PHEMTs.

Published in:

Active & Passive Electronic Components, 2003, v. 26, n. 2, p. 115

By:

Yarn, K.F.;
Chien, W.C.;
Wang, C.S.

Publication type:

Article

Design of High Peak Power Pulsed Laser Diode Driver.

Published in:

Photonics, 2022, v. 9, n. 9, p. N.PAG, doi. 10.3390/photonics9090652

By:

Liu, Ching-Yao;
Wu, Chih-Chiang;
Tang, Li-Chuan;
Chieng, Wei-Hua;
Chang, Edward-Yi;
Peng, Chun-Yen;
Kuo, Hao-Chung

Publication type:

Article

Novel Broadband Slot-Spiral Antenna for Terahertz Applications.

Published in:

Photonics, 2021, v. 8, n. 4, p. 123, doi. 10.3390/photonics8040123

By:

Huang, Zhen;
Li, Zhaofeng;
Dong, Hui;
Yang, Fuhua;
Yan, Wei;
Wang, Xiaodong

Publication type:

Article

Atomistic modeling of interfaces in III-V semiconductor superlattices.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 4, p. 613, doi. 10.1002/pssb.201552496

By:

Maier, Jürgen;
Detz, Hermann

Publication type:

Article

Improved Ohmic contact to GaN and AlGaN/GaN two-dimensional electron gas using trap assisted tunneling by B implantation.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 989, doi. 10.1002/pssb.201451586

By:

Upadhyay, Pankaj;
Meer, Mudassar;
Takhar, Kuldeep;
Khachariya, Dolar;
Kumar S, Akhil;
Banerjee, Debashree;
Ganguly, Swaroop;
Laha, Apurba;
Saha, Dipankar

Publication type:

Article

GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111).

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1195, doi. 10.1002/pssb.201451596

By:

Wośko, Mateusz;
Paszkiewicz, Bogdan;
Vincze, Andrej;
Szymański, Tomasz;
Paszkiewicz, Regina

Publication type:

Article

Selective area deposition of diamond films on AlGaN/GaN heterostructures.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 12, p. 2574, doi. 10.1002/pssb.201451167

By:

Izak, Tibor;
Babchenko, Oleg;
Jirásek, Vít;
Vanko, Gabriel;
Vallo, Martin;
Vojs, Marián;
Kromka, Alexander

Publication type:

Article

Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy.

Published in:

Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-53478-2

By:

Takeuchi, Kazuma;
Ogura, Hiroyuki;
Hasuike, Noriyuki;
Kamikawa, Takeshi

Publication type:

Article

Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-35677-5

By:

Mansor, Marwan;
Norhaniza, Rizuan;
Shuhaimi, Ahmad;
Hisyam, Muhammad Iznul;
Omar, Al-Zuhairi;
Williams, Adam;
Mat Hussin, Mohd Rofei

Publication type:

Article

Performance analysis of gallium nitride-based DH-HEMT with polarization-graded AlGaN back-barrier layer.

Published in:

Applied Physics B: Lasers & Optics, 2023, v. 129, n. 6, p. 1, doi. 10.1007/s00340-023-08042-7

By:

Kalita, Sanjib;
Awadhiya, Bhaskar;
Changmai, Papul

Publication type:

Article

First demonstration of 30 eVee ionization energy resolution with Ricochet germanium cryogenic bolometers.

Published in:

European Physical Journal C -- Particles & Fields, 2024, v. 84, n. 2, p. 1, doi. 10.1140/epjc/s10052-024-12433-1

By:

Ricochet Collaboration;
Augier, C.;
Baulieu, G.;
Belov, V.;
Bergé, L.;
Billard, J.;
Bres, G.;
Bret, J. -. L.;
Broniatowski, A.;
Calvo, M.;
Cazes, A.;
Chaize, D.;
Chala, M.;
Chapellier, M.;
Chaplinsky, L.;
Chemin, G.;
Chen, R.;
Colas, J.;
Cudmore, E.;
De Jesus, M.

Publication type:

Article

An E band MMIC power amplifier design using 100 nm T‐Gate GaN HEMT on SiC.

Published in:

International Journal of Circuit Theory & Applications, 2024, v. 52, n. 8, p. 4129, doi. 10.1002/cta.3941

By:

Jin, Liwei;
Cheng, Zhiqun;
Wang, Yonghui;
Liu, Guohua

Publication type:

Article

A broadband low‐loss SPDT RF switch using a new off‐chip compensation technology.

Published in:

International Journal of Circuit Theory & Applications, 2024, v. 52, n. 8, p. 4140, doi. 10.1002/cta.3927

By:

Gong, Tingwei;
Cheng, Zhiqun;
Le, Chao;
Xuan, Xuefei;
Zhang, Zhiwei;
Zheng, Bangjie;
Qian, Tianle

Publication type:

Article

A 20‐W wideband voltage controlled attenuator for millimeter‐wave applications.

Published in:

International Journal of Circuit Theory & Applications, 2023, v. 51, n. 5, p. 2065, doi. 10.1002/cta.3557

By:

Wang, Yuan;
Hsu, Heng‐Tung;
Tsao, Yi‐Fan

Publication type:

Article

Implementation of class‐E/F3 power amplifiers based on the variations of the MOSFET grading coefficient, built‐in potential and output capacitance along with their roles in MOSFET selectivity.

Published in:

International Journal of Circuit Theory & Applications, 2023, v. 51, n. 3, p. 1132, doi. 10.1002/cta.3487

By:

Abdipour, Ashkan;
Hayati, Mohsen;
Grebennikov, Andrei

Publication type:

Article

Employing simplified resistance–inductance–capacitance equivalent circuits to analyze and confirm a gallium nitride‐based current linear regulator for laser diode controls.

Published in:: International Journal of Circuit Theory & Applications, 2022, v. 50, n. 11, p. 3788, doi. 10.1002/cta.3371
Publication type:: Article

Simulation and implementation of a two‐mode‐operation transconductance regulator with a Gallium Nitride High‐Electron‐Mobility Transistor.

Published in:

International Journal of Circuit Theory & Applications, 2022, v. 50, n. 1, p. 197, doi. 10.1002/cta.3141

By:

Pai, Kai‐Jun;
Lin, Chang‐Hua

Publication type:

Article

Efficiency evaluation of a bridgeless totem‐pole power factor correction rectifier using GaN and insulated gate bipolar transistor devices for battery charger.

Published in:

International Journal of Circuit Theory & Applications, 2021, v. 49, n. 4, p. 1133, doi. 10.1002/cta.2894

By:

Mayer, Robson;
Berrehil El Kattel, Menaouar;
Jeske, Edson;
Garcia Oliveira, Sérgio Vidal

Publication type:

Article

Auto‐clamping interface circuit for high electron mobility transistor‐based heavy metal detection sensor.

Published in:

International Journal of Circuit Theory & Applications, 2021, v. 49, n. 3, p. 864, doi. 10.1002/cta.2932

By:

Kishore, Kaushal;
Chaturvedi, Nidhi;
Akbar, SA

Publication type:

Article

Performance improvement of DC‐DC converter using L‐D‐based modified GaN‐FET driver.

Published in:

International Journal of Circuit Theory & Applications, 2020, v. 48, n. 6, p. 860, doi. 10.1002/cta.2787

By:

Santra, Subhendu Bikash;
Roy, Aratrika;
Roy Choudhury, Tanmoy;
Chatterjee, Debashis;
Nayak, Byamakesh

Publication type:

Article

Low power flexible monolayer MoS2 integrated circuits.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-39390-9

By:

Tang, Jian;
Wang, Qinqin;
Tian, Jinpeng;
Li, Xiaomei;
Li, Na;
Peng, Yalin;
Li, Xiuzhen;
Zhao, Yanchong;
He, Congli;
Wu, Shuyu;
Li, Jiawei;
Guo, Yutuo;
Huang, Biying;
Chu, Yanbang;
Ji, Yiru;
Shang, Dashan;
Du, Luojun;
Yang, Rong;
Yang, Wei;
Bai, Xuedong

Publication type:

Article

On-chip GaN-on-SiC VCO using a tunable substrate integrated waveguide loaded with complementary split ring resonator.

Published in:

Journal of Electromagnetic Waves & Applications, 2019, v. 33, n. 8, p. 1052, doi. 10.1080/09205071.2019.1588790

By:

Kao, Hsuan-Ling;
Cho, Cheng-Lin

Publication type:

Article

On the Validity of the Dynamical Mean-Field Approximation for Studying the Two-Dimensional Hubbard Model on a Square Lattice.

Published in:

Advances in Condensed Matter Physics, 2010, p. 1, doi. 10.1155/2010/487381

By:

Ribeiro, A. N.;
Macedo, C. A.

Publication type:

Article

Polarization Switching in Ferroelectric Thin Films Undergoing First-Order Phase Transitions.

Published in:

Advances in Condensed Matter Physics, 2010, p. 1, doi. 10.1155/2010/387853

By:

Bakaleinikov, L. A.;
Gordon, A.

Publication type:

Article

A Comprehensive Study on AlGaN/GaN-Based HEMT for High-Speed.

Published in:

International Journal of High Speed Electronics & Systems, 2024, v. 33, n. 1, p. 1, doi. 10.1142/S0129156424500010

By:

Kandpal, Jyoti;
Kumar, Amit

Publication type:

Article

Modeling of Enhancement Mode HEMT with Π-Gate Optimization for High Power Applications.

Published in:

International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S0129156423500064

By:

Hossain, Md Maruf;
Shuvo, Md Maruf Hossain;
Titirsha, Twisha;
Islam, Syed Kamrul

Publication type:

Article

Quantum Dot Gate (QDG) Quantum Dot Channel (QDC) Multistate Logic Non-Volatile Memory (NVM) with High-K Dielectric HfO2 Barriers.

Published in:

International Journal of High Speed Electronics & Systems, 2020, v. 29, n. 1-4, p. N.PAG, doi. 10.1142/S0129156420400017

By:

Butterfield, N. R.;
Mays, R.;
Khan, B.;
Gudlavalleti, R.;
Jain, F. C.

Publication type:

Article

Modeling and Simulation of Quasi-Ballistic III-Nitride Transistors for RF and Digital Applications.

Published in:

International Journal of High Speed Electronics & Systems, 2019, v. 28, n. 1/2, p. N.PAG, doi. 10.1142/S0129156419400111

By:

Li, Kexin;
Rakheja, Shaloo

Publication type:

Article

Ultra-Wide Bandgap AlxGa1-xN Channel Transistors.

Published in:

International Journal of High Speed Electronics & Systems, 2019, v. 28, n. 1/2, p. N.PAG, doi. 10.1142/S0129156419400093

By:

Razzak, Towhidur;
Rajan, Siddharth;
Armstrong, Andrew

Publication type:

Article