Works about MODULATION-doped field-effect transistors

Results: 1308

253 GHz fT Graded‐Channel AlGaN/GaN High‐Electron‐Mobility Transistors with New Cliff Barrier for Millimeter Wave High‐Frequency Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 7, p. 1, doi. 10.1002/pssa.202400552

By:

Angen Franklin, S.;
I. V., Binola K. Jebalin;
Chander, Subhash;
Juliet Rani, Sylvia;
Nirmal, D.

Publication type:

Article

Performance of InAlN-GaN HEMT with BGaN Back Barrier for Ku Band Low-Noise Amplifiers (LNA).

Published in:

Journal of Integrated Circuits & Systems, 2025, v. 20, n. 1, p. 1, doi. 10.29292/jics.v20i1.1001

By:

Guenineche, Lotfi;
Kourdi, Zakarya;
Khaouani, Mohammed

Publication type:

Article

Accuracy Improvement of the Large-Signal Model of a High-Power GaN HEMT using Power-Dependent Constant and Tapered Thermal Resistance Methods.

Published in:

Journal of Electromagnetic Engineering & Science, 2025, v. 25, n. 3, p. 241, doi. 10.26866/jees.2025.3.r.294

By:

Ho-Sang Kwon;
Dong-Wook Kim

Publication type:

Article

Ka 대역 위성통신용 4 W GaN HEMT 고효율 전력증폭기MMIC 설계.

Published in:

Journal of Korean Institute of Electromagnetic Engineering & Science / Han-Guk Jeonjapa Hakoe Nonmunji, 2025, v. 36, n. 4, p. 374, doi. 10.5515/KJKIEES.2025.36.4.374

By:

임서균;
빈수현;
안민석;
문규현;
양영구

Publication type:

Article

HEMT structures.

Published in:

Solid State Technology, 2000, v. 43, n. 12, p. 130

By:

Kelley, B.J.;
Dodrill, B.C.;
Lindemuth, J.R.;
Du, G.;
Meyer, J.R.

Publication type:

Article

Impact of Gate Angle Variations on DC and RF Performance of Enhancement-Mode Al0.15Ga0.85N/GaN/Al0.07Ga0.93N MIS-HEMT Device: Impact of Gate Angle Variations on DC and RF Performance...: L. Lino et al.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 2447, doi. 10.1007/s11664-024-11726-1

By:

Lino, L.;
Saravana Kumar, R.;
Leeban Moses, M.;
Mohanbabu, A.

Publication type:

Article

Investigating the Impact of Fe-Doped GaN and β-Ga2O3 Buffer Layers on a Laterally Scaled AlN/GaN HEMT Using Silicon Carbide Substrate for Next-Generation RF Electronics.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 2355, doi. 10.1007/s11664-024-11672-y

By:

Devi, K. Nirmala;
Hariprasad, S.;
Natarajan, Ramkumar;
Chinnaswamy, Sivamani;
Ravi, S.

Publication type:

Article

Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 2340, doi. 10.1007/s11664-024-11664-y

By:

Murugapandiyan, P.;
Revathy, A.;
Ramkumar, N.;
Kumar, R. Saravana;
Mohanbabu, A.

Publication type:

Article

Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated InAlGaN/GaN MIS-HEMTs Using ZrO2 Seed Layers: Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated...: Tien-Han Yu et al

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 2, p. 1096, doi. 10.1007/s11664-024-11600-0

By:

Yu, Tien-Han;
Chen, Yu-Lin;
Tsao, Yi-Fan;
Hsu, Chin-Tsai;
Lu, Tsan-Feng;
Hsu, Heng-Tung

Publication type:

Article

Improvement of Breakdown Characteristic for a Novel GaN HEMT with Enhanced Resistance Single-Event Transient Effect.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 1, p. 784, doi. 10.1007/s11664-024-11579-8

By:

Sun, Shuxiang;
Zhang, Yajun;
Si, Yihan;
Xiong, Juan;
Luo, Xiaorong

Publication type:

Article

Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 9, p. 5555, doi. 10.1007/s11664-024-11289-1

By:

Lino, L.;
Saravana Kumar, R.;
Mohanbabu, A.;
Murugapandiyan, P.

Publication type:

Article

A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 8, p. 4287, doi. 10.1007/s11664-024-11177-8

By:

Deshpande, Gauri;
Bhattacharya, Sandip;
Ajayan, J.;
Mounika, B.;
Nirmal, D.

Publication type:

Article

Gate Leakage Suppression and Threshold Voltage Stability Improvement in GaN-Based Enhancement-Mode HEMTs on Ultrathin-Barrier AlGaN/GaN Heterostructures with a p-Doping-Free GaN Cap.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3926, doi. 10.1007/s11664-024-11156-z

By:

Wang, Yuhao;
Huang, Sen;
Jiang, Qimeng;
Wang, Xinhua;
Guo, Fuqiang;
Feng, Chao;
Fan, Jie;
Yin, Haibo;
Gao, Xinguo;
Wei, Ke;
Zheng, Yingkui;
Liu, Xinyu

Publication type:

Article

Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3887, doi. 10.1007/s11664-024-11100-1

By:

Venkatesan, R. S.;
Manickam, Rajeswari;
Duraipandi, Brindha;
Sugathan, Krishnapriya Kottakkal

Publication type:

Article

High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3415, doi. 10.1007/s11664-024-11074-0

By:

Das, Partha

Publication type:

Article

Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 2973, doi. 10.1007/s11664-024-11005-z

By:

Murugapandiyan, P.;
Sri Rama Krishna, Kalva;
Revathy, A.;
Fletcher, Augustine

Publication type:

Article

Investigation of Double RESURF P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Partial N-GaN Channels.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2562, doi. 10.1007/s11664-024-10987-0

By:

Li, Huan;
Bai, Zhiyuan;
Yang, Lian

Publication type:

Article

Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2533, doi. 10.1007/s11664-024-10968-3

By:

Chen, Zhichao;
Cai, Lie;
Niu, Kai;
Xu, Chaozhi;
Lin, Haoxiang;
Ren, Pengpeng;
Sun, Dong;
Lin, Haifeng

Publication type:

Article

Enhancing AlGaN/GaN HEMT Performance through Gate-All-Around AlN Passivation: A Comparative Study with a Planar MIS-HEMT.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2477, doi. 10.1007/s11664-024-10940-1

By:

Soma, Umamaheshwar

Publication type:

Article

Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 845, doi. 10.1007/s10854-016-5599-6

By:

Chang, Edward;
Hsiao, Chih-Jen;
Chang, Sheng-Po;
Chang, Shoou-Jinn;
Ha, Minh-Thien-Huu;
Nguyen, Hong-Quan;
Yu, Hung-Wei;
Wong, Yuen-Yee;
Liu, Chun-Kuan;
Maa, Jer-Shen

Publication type:

Article

Structural investigation of AlInN/AlN/GaN heterostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2852, doi. 10.1007/s10854-015-4101-1

By:

Tamer, M.;
Öztürk, M.;
Çörekçi, S.;
Baş, Y.;
Gültekin, A.;
Kurtuluş, G.;
Özçelik, S.;
Özbay, E.

Publication type:

Article

Irradiation effects on AlGaN HFET devices and GaN layers.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 64, doi. 10.1007/s10854-008-9589-1

By:

Gnanapragasam, Sonia;
Richter, Eberhard;
Brunner, Frank;
Denker, Andrea;
Lossy, Richard;
Mai, Michael;
Lenk, Friedrich;
Opitz-Coutureau, Jörg;
Pensl, Gerhard;
Schmidt, Jens;
Zeimer, Ute;
Wang, Liun;
Krishnan, Baskar;
Weyers, Markus;
Würfl, Jaochim;
Tränkle, Günther

Publication type:

Article

Buffer-trapping effects on current slump in AlGaN/GaN HEMTs.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 735, doi. 10.1007/s10854-007-9399-x

By:

Nakajima, Atsushi;
Horio, Kazushige

Publication type:

Article

High temperature assessment of nitride-based devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 189, doi. 10.1007/s10854-007-9298-1

By:

Cuerdo, R.;
Pedrós, J.;
Navarro, A.;
Braña, A. F.;
Pau, J. L.;
Muñoz, E.;
Calle, F.

Publication type:

Article

125 - 211 GHz low noise MMIC amplifier design for radio astronomy.

Published in:

Experimental Astronomy, 2019, v. 48, n. 2/3, p. 137, doi. 10.1007/s10686-019-09641-z

By:

White, Daniel;
McGenn, William;
George, Danielle;
Fuller, Gary A.;
Cleary, Kieran;
Readhead, Anthony;
Lai, Richard;
Mei, Gerry

Publication type:

Article

Array of electrodeposited Ru-decorated TiO2 nanotubes with enhanced photoresponse.

Published in:

Journal of Solid State Electrochemistry, 2018, v. 22, n. 8, p. 2445, doi. 10.1007/s10008-018-3955-6

By:

Castelhano, Douglas Iafrate;
De Almeida, Juliana;
De Paiva Pinheiro, Carlos Henrique;
Bertazzoli, Rodnei;
De Arruda Rodrigues, Christiane

Publication type:

Article

Design of two-dimensional plane rapid expansion nozzles.

Published in:

ZAMM -- Journal of Applied Mathematics & Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik, 2003, v. 83, n. 1, p. 69, doi. 10.1002/zamm.200310006

By:

Heynatz, J. T.

Publication type:

Article

Application of BiFeO and BiTiO in ferroelectric memory, phase shifters of a phased array, and microwave HEMTs.

Published in:

Inorganic Materials, 2013, v. 49, n. 10, p. 1031, doi. 10.1134/S0020168513100038

By:

Kalinkin, A.;
Kozhbakhteev, E.;
Polyakov, A.;
Skorikov, V.

Publication type:

Article

Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs.

Published in:

Electronic Materials, 2024, v. 5, n. 3, p. 132, doi. 10.3390/electronicmat5030009

By:

Cioni, Marcello;
Giorgino, Giovanni;
Chini, Alessandro;
Parisi, Antonino;
Cappellini, Giacomo;
Miccoli, Cristina;
Castagna, Maria Eloisa;
Tringali, Cristina;
Iucolano, Ferdinando

Publication type:

Article

Numerical analysis of high-voltage RESURF AlGaN/GaN high-electron-mobility transistor with graded doping buffer and slant back electrode.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 12, p. 1282, doi. 10.1049/mnl.2018.5421

By:

Chao Zhu;
Xingye Zhou;
Zhihong Feng;
Zhiheng Wei;
Ziyu Zhao;
Ziqi Zhao

Publication type:

Article

氮化镓固态功率放大器发展概述.

Published in:

Electronic Science & Technology, 2023, v. 36, n. 8, p. 65, doi. 10.16180/j.cnki.issn1007-7820.2023.08.010

By:

谢红星;
路宏敏;
刘亮;
任永达;
李敏;
张嘉海

Publication type:

Article

Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201007

By:

He, Bo;
He, Gang;
Jiang, Shanshan;
Liu, Jiangwei;
Fortunato, Elvira;
Martins, Rodrigo

Publication type:

Article

The Trends of In Situ Focused Ion Beam Technology: Toward Preparing Transmission Electron Microscopy Lamella and Devices at the Atomic Scale.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101401

By:

Zhang, Zijian;
Wang, Wanting;
Dong, Zuoyuan;
Yang, Xin;
Liang, Fang;
Chen, Xinqian;
Wang, Chaolun;
Luo, Chen;
Zhang, Jiayan;
Wu, Xing;
Sun, Litao;
Chu, Junhao

Publication type:

Article

Recent Advances in GaN‐Based Power HEMT Devices.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202001045

By:

He, Jiaqi;
Cheng, Wei‐Chih;
Wang, Qing;
Cheng, Kai;
Yu, Hongyu;
Chai, Yang

Publication type:

Article

Boosting the Performance of Liquid‐Gated Nanotransistor Biosensors Using Single‐Trap Phenomena.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202000858

By:

Kutovyi, Yurii;
Piatnytsia, Volodymyr;
Boichuk, Nazarii;
Zadorozhnyi, Ihor;
Li, Jie;
Petrychuk, Mykhailo;
Vitusevich, Svetlana

Publication type:

Article

Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000074

By:

Chandrasekar, Hareesh;
Razzak, Towhidur;
Wang, Caiyu;
Reyes, Zeltzin;
Majumdar, Kausik;
Rajan, Siddharth

Publication type:

Article

An Ultra‐Flexible Solution‐Processed Metal‐Oxide/Carbon Nanotube Complementary Circuit Amplifier with Highly Reliable Electrical and Mechanical Stability.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 1, p. N.PAG, doi. 10.1002/aelm.201900845

By:

Kim, Kyung‐Tae;
Kang, Seung‐Han;
Kim, Jaeyoung;
Heo, Jae Sang;
Kim, Yong‐Hoon;
Park, Sung Kyu

Publication type:

Article

Light‐Emitting Transistors Based on Solution‐Processed Heterostructures of Self‐Organized Multiple‐Quantum‐Well Perovskite and Metal‐Oxide Semiconductors.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201800985

By:

Chaudhry, Mujeeb Ullah;
Wang, Nana;
Tetzner, Kornelius;
Seitkhan, Akmaral;
Miao, Yanfeng;
Sun, Yan;
Petty, Michael C.;
Anthopoulos, Thomas D.;
Wang, Jianpu;
Bradley, Donal D. C.

Publication type:

Article

Circuit simulation-based comparison of power electronics devices in a five-level converter for UAV applications.

Published in:

AIMS Energy, 2024, v. 12, n. 4, p. 1, doi. 10.3934/energy.2024042

By:

Bottaro, Enrico Alfredo;
Ventura, Cristina;
Rizzo, Santi Agatino

Publication type:

Article

Low temperature processed CO2 laser-assisted RF-sputtered GaN thin film for wide bandgap semiconductors.

Published in:

Journal of Asian Ceramic Societies, 2023, v. 11, n. 1, p. 68, doi. 10.1080/21870764.2022.2151102

By:

Kim, Seoung-Hyoun;
Jo, Chang-Hyeon;
Bae, Min-Sung;
Ichimura, Masaya;
Koh, Jung-Hyuk

Publication type:

Article

Journal of Chongqing University of Posts & Telecommunications (Natural Science Edition) / Chongqing Youdian Daxue Xuebao (Ziran Kexue Ban), 2021, v. 33, n. 2, p. 242, doi. 10.3979/j.issn.1673-825X.202011100349

By:

马勇;
杨力豪;
杨龙亮;
何金橙;
刘艺;
徐倩雯;
刘嘉诚;
韩宇航

Publication type:

Article

58.3: A Novel Highly Transparent 6-in. AMOLED Display Consisting of IGZO TFTs.

Published in:

SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 872, doi. 10.1002/sdtp.10371

By:

Lee, Chia‐Tse;
Huang, Yen‐Yu;
Tsai, Chi‐Chung;
Liu, Sheng‐Fa;
Kuo, Che‐Cheng;
Chiu, Chuang‐Hung;
Huang, Chin‐Hai;
Liu, En‐Chih;
Huang, Szu‐Chi;
Chen, Chun‐Lin;
Liang, Chin‐Tsung;
Huang, Jian‐Syong

Publication type:

Article

Nanoscale dual-gate InAlAs/InGaAs HEMT with improved characteristics.

Published in:

International Journal of Electronics Letters, 2020, v. 8, n. 2, p. 180, doi. 10.1080/21681724.2019.1582704

By:

Mohapatra, M.;
Panda, A. K.

Publication type:

Article

Proton Irradiation Effect on InP‐Based High Electron Mobility Transistor by Numerical Simulation with Non‐Uniform Induced Acceptor‐Like Defects.

Published in:

Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 6, p. 1, doi. 10.1002/pssr.201800027

By:

Sun, Shuxiang;
Chang, Mingming;
Zhang, Chao;
Cheng, Chao;
Li, Yuxiao;
Zhong, Yinghui;
Ding, Peng;
Jin, Zhi;
Wei, Zhichao

Publication type:

Article

Sulfur doping of AlN and AlGaN for improved n-type conductivity.

Published in:

Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 8, p. 462, doi. 10.1002/pssr.201510165

By:

Gordon, Luke;
Varley, Joel B.;
Lyons, John L.;
Janotti, Anderson;
Van de Walle, Chris G.

Publication type:

Article

Reliability Investigation of GaN HEMTs for MMICs Applications.

Published in:

Micromachines, 2014, v. 5, n. 3, p. 570, doi. 10.3390/mi5030570

By:

Chini, Alessandro;
Meneghesso, Gaudenzio;
Pantellini, Alessio;
Lanzieri, Claudio;
Zanoni, Enrico

Publication type:

Article

InGaAs HEMT Broadband Microstrip Resistive-Terminated Low Noise Amplifier.

Published in:

Progress in Electromagnetics Research M, 2022, v. 112, p. 191, doi. 10.2528/pierm22042606

By:

Bakkali, Moustapha El;
Elftouh, Hanae;
Touhami, Naima Amar;
Badaoui, Imane;
Mohammed, Lamsalli

Publication type:

Article

W-Band Single-Pole Four-Throw Switch for Multichannel High Power Transceiver Chipset Design.

Published in:

Progress in Electromagnetics Research M, 2019, v. 81, p. 107, doi. 10.2528/pierm19042701

By:

Linpu Li;
Rong Qian;
Xiaowei Sun

Publication type:

Article

A Wideband Gate Mixer Using 0.15 µm GaAs Enhancement-Mode PHEMT Technology.

Published in:

Progress in Electromagnetics Research Letters, 2019, v. 84, p. 7, doi. 10.2528/pierl18111608

By:

Xi Wang;
Jun Hu;
Yongbo Su;
Peng Ding;
Wuchang Ding;
Feng Yang;
Muhammad, Asif;
Zhi Jin

Publication type:

Article

A 2-4 GHz Octave Bandwidth GaN HEMT Power Amplifier with High E±ciency.

Published in:

Progress in Electromagnetics Research Letters, 2016, v. 63, p. 7, doi. 10.2528/pierl16081801

By:

Hao Guo;
Chun-Qing Chen;
Hao-Quan Wang;
Ming-Li Hao

Publication type:

Article