Modeling of radiation sensitivity of hydrogen sensors based on MISFET.
- Published in:
- Automation & Remote Control, 2016, v. 77, n. 7, p. 1301, doi. 10.1134/S0005117916070171
- By:
- Publication type:
- Article
Works matching DE "MISFET (Transistors)"
Results: 7
1
2
Potential of MISFET with HfN gate dielectric formed by ECR plasma sputtering.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 7, p. 1, doi. 10.1049/el.2013.0319
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- Publication type:
- Article
3
Performance Degradations of MISFET-Based Hydrogen Sensors with a Pd-Ta2O5-SiO2-Si Structure During Long-Term Operation.
- Published in:
- Sensors (14248220), 2019, v. 19, n. 8, p. 1855, doi. 10.3390/s19081855
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- Publication type:
- Article
4
200°C normally off AlGaN/GaN MISFET with 321 mA/mm drain current density and 1055 V breakdown voltage.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 5, p. 282, doi. 10.1049/el.2018.7758
- By:
- Publication type:
- Article
5
GaN-Based High-k Praseodymium Oxide Gate MISFETs with P<sub>2</sub>S<sub>5</sub>/(NH<sub>4</sub>)<sub>2</sub>S<sub>X</sub> + UV Interface Treatment Technology.
- Published in:
- Active & Passive Electronic Components, 2012, p. 1, doi. 10.1155/2012/459043
- By:
- Publication type:
- Article
6
A New Electro-Thermal Modeling of Low Voltage Power MOSFET with Junction Temperature Dependent Foster (RC) Thermal Network.
- Published in:
- Journal of Nano- & Electronic Physics, 2018, v. 10, n. 4, p. 1, doi. 10.21272/jnep.10(4).04017
- By:
- Publication type:
- Article
7
GaN‐Based Vertical <italic>n</italic>‐Channel MISFETs on Free Standing Ammonothermal GaN Substrates.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 8, p. 1, doi. 10.1002/pssa.201700422
- By:
- Publication type:
- Article