Works matching DE "METAL-insulator-semiconductor structures"

Results: 33

Radiation Sensitivity Modeling Technique of Sensors' Mis-Transistor Elements.
Published in:
Automation & Remote Control, 2018, v. 79, n. 1, p. 180, doi. 10.1134/S0005117918010150
By:
- Podlepetsky, B.;
- Bakerenkov, A.;
- Sukhoroslova, Yu.
Publication type:
Article
A novel GaN MIS‐HEMT with a floating clamp electrode for suppressing short‐channel effect.
Published in:
Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 19, p. 747, doi. 10.1049/ell2.12246
By:
- Shi, Yijun;
- Wang, Hongyue
Publication type:
Article
Quasi-stationary electron and ion processes in dielectric films and diagnostics of films.
Published in:
Journal of Communications Technology & Electronics, 2013, v. 58, n. 9, p. 956, doi. 10.1134/S1064226913090027
By:
- Dmitriev, S. G.
Publication type:
Article
Diode Polarization and Resistive Switching in Metal/TlGaSe2 Semiconductor/Metal Devices.
Published in:
Semiconductors, 2018, v. 52, n. 16, p. 2007, doi. 10.1134/S1063782618160273
By:
- Seyidov, MirHasan Yu.;
- Suleymanov, R. A.;
- Şale, Yasin;
- Kandemir, Buket Bilgen
Publication type:
Article
Modulation of the Charge of Germanium MIS Structures with Fluorine-Containing Insulators.
Published in:
Semiconductors, 2018, v. 52, n. 8, p. 1068, doi. 10.1134/S1063782618080201
By:
- Shalimova, M. B.
Publication type:
Article
The forming process in resistive-memory elements based on metal-insulator-semiconductor structures.
Published in:
Technical Physics Letters, 2014, v. 40, n. 10, p. 837, doi. 10.1134/S1063785014100137
By:
- Tikhov, S.;
- Gorshkov, O.;
- Antonov, I.;
- Kasatkin, A.;
- Koryazhkina, M.
Publication type:
Article
Analysis of the electroluminescence features of silicon metal-insulator-semiconductor structures as a tool for diagnostics of the injection properties of a dielectric layer.
Published in:
Technical Physics Letters, 2013, v. 39, n. 10, p. 878, doi. 10.1134/S1063785013100040
By:
- Illarionov, Yu.;
- Vexler, M.;
- Isakov, D.;
- Fedorov, V.;
- Sing, Yew
Publication type:
Article
Reduced Contact Resistance Between Metal and n-Ge by Insertion of ZnO with Argon Plasma Treatment.
Published in:
Nanoscale Research Letters, 2018, v. 13, n. 1, p. 1, doi. 10.1186/s11671-018-2650-y
By:
- Zhang, Yi;
- Han, Genquan;
- Wu, Hao;
- Wang, Xiao;
- Liu, Yan;
- Zhang, Jincheng;
- Liu, Huan;
- Zheng, Haihua;
- Chen, Xue;
- Liu, Chang;
- Hao, Yue
Publication type:
Article
An electrodeposited inhomogeneous metal-insulator-semiconductor junction for efficient photoelectrochemical water oxidation.
Published in:
Nature Materials, 2015, v. 14, n. 11, p. 1150, doi. 10.1038/nmat4408
By:
- Hill, James C.;
- Landers, Alan T.;
- Switzer, Jay A.
Publication type:
Article
Influence of Si3N4 layer on the electrical properties of Au/n-4H SiC diodes.
Published in:
Bulletin of Materials Science, 2018, v. 41, n. 3, p. 1, doi. 10.1007/s12034-018-1586-2
By:
- Yigiterol, Fatih;
- Gullu, Hasan H;
- Yildiz, Esra D
Publication type:
Article
Single-Walled Carbon-Nanotubes-Based Organic Memory Structures.
Published in:
Molecules, 2016, v. 21, n. 9, p. 1166, doi. 10.3390/molecules21091166
By:
- Fakher, Sundes;
- Nejm, Razan;
- Ayesh, Ahmad;
- AL-Ghaferi, Amal;
- Zeze, Dagou;
- Mabrook, Mohammed
Publication type:
Article
Dopant in Near-Surface Semiconductor Layers of Metal-Insulator-Semiconductor Structures Based on Graded-Gap p-HgCdTe Grown by Molecular-Beam Epitaxy.
Published in:
Journal of Electronic Materials, 2016, v. 45, n. 2, p. 881, doi. 10.1007/s11664-015-4239-x
By:
- Voitsekhovskii, A.;
- Nesmelov, S.;
- Dzyadukh, S.
Publication type:
Article
Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles.
Published in:
Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2835, doi. 10.1007/s11664-015-3692-x
By:
- Nejm, Razan;
- Ayesh, Ahmad;
- Zeze, Dagou;
- Sleiman, Adam;
- Mabrook, Mohammed;
- Al-Ghaferi, Amal;
- Hussein, Mousa
Publication type:
Article
Finite Element Analysis of Optically Controlled MIS Slow Wave Line using High Frequency Structure Simulator.
Published in:
International Journal of Microwave & Optical Technology, 2015, v. 10, n. 3, p. 211
By:
- Tomar, Raghbendra Singh;
- Bhadauria, Avanish;
- Sharma, Enakshi Khular;
- Verma, A. K.
Publication type:
Article
Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells.
Published in:
Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1276-1
By:
- Izhnin, Ihor;
- Nesmelov, Sergey;
- Dzyadukh, Stanislav;
- Voitsekhovskii, Alexander;
- Gorn, Dmitry;
- Dvoretsky, Sergey;
- Mikhailov, Nikolaj
Publication type:
Article
Study of CBD-CdS/CZTGSe solar cells using different Cd sources: behavior of devices as a MIS structure.
Published in:
Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 24, p. 18706, doi. 10.1007/s10854-017-7820-7
By:
- Vigil-Galán, O.;
- Andrade-Arvizu, J.;
- Courel-Piedrahita, Maykel;
- Mejía-García, C.;
- Valencia-Resendíz, E.;
- Sánchez-González, Y.;
- Espíndola-Rodríguez, M.;
- Saucedo-Silva, E.;
- González-Castillo, R.;
- Rodríguez-González, E.;
- Seuret-Jiménez, D.;
- Jiménez-Olarte, D.
Publication type:
Article
Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-HgCdTe Grown by Molecular Beam Epitaxy.
Published in:
Russian Physics Journal, 2016, v. 59, n. 2, p. 284, doi. 10.1007/s11182-016-0769-9
By:
- Voitsekhovskii, A.;
- Nesmelov, S.;
- Dzyadukh, S.
Publication type:
Article
Effect of Pulse Nanosecond Volume Discharge in Air at Atmospheric Pressure on Electrical Properties of Mis Structures Based on p-HgCdTe Grown by Molecular Beam Epitaxy.
Published in:
Russian Physics Journal, 2015, v. 58, n. 7, p. 970, doi. 10.1007/s11182-015-0597-3
By:
- Voitsekhovskii, A.;
- Nesmelov, S.;
- Dzyadukh, S.;
- Grigor'ev, D.;
- Tarasenko, V.;
- Shulepov, M.
Publication type:
Article
Hysteresis Phenomena in mis Structures Based on Graded-Gap MBE Hgcdte with a Two-Layer Plasma-Chemical Insulator SIO/SIN.
Published in:
Russian Physics Journal, 2015, v. 58, n. 4, p. 540, doi. 10.1007/s11182-015-0532-7
By:
- Voitsekhovskii, А.;
- Nesmelov, S.;
- Dzyadukh, S.
Publication type:
Article
Admittance in MIS Structures Based on Graded-GAP MBE p-HgCdTe ( x = 0.22-0.23) in the Strong Inversion Mode.
Published in:
Russian Physics Journal, 2014, v. 57, n. 8, p. 1070, doi. 10.1007/s11182-014-0345-0
By:
- Voitsekhovskii, A.;
- Nesmelov, S.;
- Dzyadukh, S.
Publication type:
Article
Special Features of Admittance in Mis Structures Based on Graded-Gap MBE n-HgCdTe ( x = 0.31-0.32) in a Temperature Range OF 8-300 K.
Published in:
Russian Physics Journal, 2014, v. 57, n. 5, p. 633, doi. 10.1007/s11182-014-0286-7
By:
- Voitsekhovskii, A.;
- Nesmelov, S.;
- Dzyadukh, S.;
- Vasil'ev, V.;
- Varavin, V.;
- Dvoretskii, S.;
- Мikhailov, N.;
- Kuz'min, V.;
- Remesnik, V.
Publication type:
Article
Differential Resistance of Space Charge Region in MIS Structures Based on Graded-Gap MBE n-HgCdTe ( x = 0.23) in a Wide Temperature Range.
Published in:
Russian Physics Journal, 2014, v. 57, n. 4, p. 536, doi. 10.1007/s11182-014-0272-0
By:
- Voitsekhovskii, A.;
- Nesmelov, S.;
- Dzyadukh, S.;
- Vasil'ev, V.;
- Varavin, V.;
- Dvoretskii, S.;
- Мikhailov, N.;
- Kuz'min, V.;
- Remesnik, V.
Publication type:
Article
Stress‐and‐Sense Investigation of Memory Effect in Si‐NCs MIS Structures.
Published in:
Physica Status Solidi (B), 2018, v. 255, n. 10, p. N.PAG, doi. 10.1002/pssb.201700634
By:
- Mazurak, Andrzej;
- Jasiński, Jakub;
- Mroczyński, Robert
Publication type:
Article
EVOLUTION OF COPPER(II) OXIDE NANOSTRUCTURES IN POROUS GLASS MATRIX.
Published in:
Smart Nanocomposites, 2015, v. 6, n. 2, p. 236
By:
- Pak, Vyacheslav N.;
- Golovin, Oleg V.
Publication type:
Article
Fabrication and characterization of AlN metal-insulator-semiconductor grown Si substrate.
Published in:
Modern Physics Letters B, 2017, v. 31, n. 33, p. -1, doi. 10.1142/S0217984917503134
By:
- Mahyuddin, A.;
- Azrina, A.;
- Mohd Yusoff, M. Z.;
- Hassan, Z.
Publication type:
Article
A General Strategy to Achieve Colossal Permittivity and Low Dielectric Loss Through Constructing Insulator/Semiconductor/Insulator Multilayer Structures.
Published in:
Journal of Low Temperature Physics, 2018, v. 192, n. 5/6, p. 346, doi. 10.1007/s10909-018-1985-1
By:
- Liu, Kai;
- Sun, Yalong;
- Zheng, Fengang;
- Tse, Mei-Yan;
- Sun, Qingbo;
- Liu, Yun;
- Hao, Jianhua
Publication type:
Article
Decoupling of epitaxy-related trapping effects in AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 5, p. 1222, doi. 10.1002/pssa.201532752
By:
- Huber, Martin;
- Curatola, Gilberto;
- Pozzovivo, Gianmauro;
- Daumiller, Ingo;
- Knuuttila, Lauri;
- Silvestri, Marco;
- Bonanni, Alberta;
- Lundskog, Anders
Publication type:
Article
High‐Performance and Stable Silicon Photoanode Modified by Crystalline Ni@ Amorphous Co Core‐Shell Nanoparticles.
Published in:
ChemCatChem, 2018, v. 10, n. 21, p. 5039, doi. 10.1002/cctc.201801417
By:
- Chen, Jie;
- Xu, Guangzhou;
- Yan, Shicheng;
- Yu, Zhentao;
- Zou, Zhigang;
- Wang, Chao;
- Zhu, Kai;
- Wang, Hongxu
Publication type:
Article
Analysis of interface states and series resistance for Al/PVA:n-CdS nanocomposite metal-semiconductor and metal-insulator-semiconductor diode structures.
Published in:
Applied Physics A: Materials Science & Processing, 2013, v. 113, n. 2, p. 491, doi. 10.1007/s00339-013-7552-3
By:
- Sharma, Mamta;
- Tripathi, S.
Publication type:
Article
Passivation of aluminium-n+ silicon contacts for solar cells by ultrathin Al2O3 and SiO2 dielectric layers.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 11, p. 946, doi. 10.1002/pssr.201308115
By:
- Bullock, James;
- Yan, Di;
- Cuevas, Andrés
Publication type:
Article
Specific features of the capacitance-voltage characteristics of a Cu-SiO- p-InSb MIS structure.
Published in:
Semiconductors, 2017, v. 51, n. 3, p. 367, doi. 10.1134/S1063782617030022
By:
- Aliev, R.;
- Gajiev, G.;
- Gadzhialiev, M.;
- Ismailov, A.;
- Pirmagomedov, Z.
Publication type:
Article
Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide.
Published in:
Semiconductors, 2015, v. 49, n. 4, p. 472, doi. 10.1134/S1063782615040120
By:
- Goldman, E.;
- Levashova, A.;
- Levashov, S.;
- Chucheva, G.
Publication type:
Article
Determination of the diffusion length of minority charge carriers in a semiconductor from the dynamic nonequilibrium I- V characteristics of MIS structures.
Published in:
Semiconductors, 2014, v. 48, n. 7, p. 875, doi. 10.1134/S1063782614070161
By:
- Popov, V.
Publication type:
Article

Works matching DE "METAL-insulator-semiconductor structures"

Radiation Sensitivity Modeling Technique of Sensors' Mis-Transistor Elements.

A novel GaN MIS‐HEMT with a floating clamp electrode for suppressing short‐channel effect.

Quasi-stationary electron and ion processes in dielectric films and diagnostics of films.

Diode Polarization and Resistive Switching in Metal/TlGaSe<sub>2</sub> Semiconductor/Metal Devices.

Modulation of the Charge of Germanium MIS Structures with Fluorine-Containing Insulators.

The forming process in resistive-memory elements based on metal-insulator-semiconductor structures.

Analysis of the electroluminescence features of silicon metal-insulator-semiconductor structures as a tool for diagnostics of the injection properties of a dielectric layer.

Reduced Contact Resistance Between Metal and n-Ge by Insertion of ZnO with Argon Plasma Treatment.

An electrodeposited inhomogeneous metal-insulator-semiconductor junction for efficient photoelectrochemical water oxidation.

Influence of Si3N4 layer on the electrical properties of Au/n-4H SiC diodes.

Single-Walled Carbon-Nanotubes-Based Organic Memory Structures.

Dopant in Near-Surface Semiconductor Layers of Metal-Insulator-Semiconductor Structures Based on Graded-Gap p-HgCdTe Grown by Molecular-Beam Epitaxy.

Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles.

Finite Element Analysis of Optically Controlled MIS Slow Wave Line using High Frequency Structure Simulator.

Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells.

Study of CBD-CdS/CZTGSe solar cells using different Cd sources: behavior of devices as a MIS structure.

Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-HgCdTe Grown by Molecular Beam Epitaxy.

Effect of Pulse Nanosecond Volume Discharge in Air at Atmospheric Pressure on Electrical Properties of Mis Structures Based on p-HgCdTe Grown by Molecular Beam Epitaxy.

Hysteresis Phenomena in mis Structures Based on Graded-Gap MBE Hgcdte with a Two-Layer Plasma-Chemical Insulator SIO/SIN.

Admittance in MIS Structures Based on Graded-GAP MBE p-HgCdTe ( x = 0.22-0.23) in the Strong Inversion Mode.

Special Features of Admittance in Mis Structures Based on Graded-Gap MBE n-HgCdTe ( x = 0.31-0.32) in a Temperature Range OF 8-300 K.

Differential Resistance of Space Charge Region in MIS Structures Based on Graded-Gap MBE n-HgCdTe ( x = 0.23) in a Wide Temperature Range.

Stress‐and‐Sense Investigation of Memory Effect in Si‐NCs MIS Structures.

EVOLUTION OF COPPER(II) OXIDE NANOSTRUCTURES IN POROUS GLASS MATRIX.

Fabrication and characterization of AlN metal-insulator-semiconductor grown Si substrate.

A General Strategy to Achieve Colossal Permittivity and Low Dielectric Loss Through Constructing Insulator/Semiconductor/Insulator Multilayer Structures.

Decoupling of epitaxy-related trapping effects in AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors.

High‐Performance and Stable Silicon Photoanode Modified by Crystalline Ni@ Amorphous Co Core‐Shell Nanoparticles.

Analysis of interface states and series resistance for Al/PVA:n-CdS nanocomposite metal-semiconductor and metal-insulator-semiconductor diode structures.

Passivation of aluminium-n<sup>+</sup> silicon contacts for solar cells by ultrathin Al<sub>2</sub>O<sub>3</sub> and SiO<sub>2</sub> dielectric layers.

Specific features of the capacitance-voltage characteristics of a Cu-SiO- p-InSb MIS structure.

Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide.

Determination of the diffusion length of minority charge carriers in a semiconductor from the dynamic nonequilibrium I- V characteristics of MIS structures.