Works matching DE "METAL-insulator-semiconductor structures"

Results: 33

Study of CBD-CdS/CZTGSe solar cells using different Cd sources: behavior of devices as a MIS structure.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 24, p. 18706, doi. 10.1007/s10854-017-7820-7

By:

Vigil-Galán, O.;
Andrade-Arvizu, J.;
Courel-Piedrahita, Maykel;
Mejía-García, C.;
Valencia-Resendíz, E.;
Sánchez-González, Y.;
Espíndola-Rodríguez, M.;
Saucedo-Silva, E.;
González-Castillo, R.;
Rodríguez-González, E.;
Seuret-Jiménez, D.;
Jiménez-Olarte, D.

Publication type:

Article

Single-Walled Carbon-Nanotubes-Based Organic Memory Structures.

Published in:

Molecules, 2016, v. 21, n. 9, p. 1166, doi. 10.3390/molecules21091166

By:

Fakher, Sundes;
Nejm, Razan;
Ayesh, Ahmad;
AL-Ghaferi, Amal;
Zeze, Dagou;
Mabrook, Mohammed

Publication type:

Article

A novel GaN MIS‐HEMT with a floating clamp electrode for suppressing short‐channel effect.

Published in:

Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 19, p. 747, doi. 10.1049/ell2.12246

By:

Shi, Yijun;
Wang, Hongyue

Publication type:

Article

EVOLUTION OF COPPER(II) OXIDE NANOSTRUCTURES IN POROUS GLASS MATRIX.

Published in:

Smart Nanocomposites, 2015, v. 6, n. 2, p. 236

By:

Pak, Vyacheslav N.;
Golovin, Oleg V.

Publication type:

Article

Influence of Si3N4 layer on the electrical properties of Au/n-4H SiC diodes.

Published in:

Bulletin of Materials Science, 2018, v. 41, n. 3, p. 1, doi. 10.1007/s12034-018-1586-2

By:

Yigiterol, Fatih;
Gullu, Hasan H;
Yildiz, Esra D

Publication type:

Article

High‐Performance and Stable Silicon Photoanode Modified by Crystalline Ni@ Amorphous Co Core‐Shell Nanoparticles.

Published in:

ChemCatChem, 2018, v. 10, n. 21, p. 5039, doi. 10.1002/cctc.201801417

By:

Chen, Jie;
Xu, Guangzhou;
Yan, Shicheng;
Yu, Zhentao;
Zou, Zhigang;
Wang, Chao;
Zhu, Kai;
Wang, Hongxu

Publication type:

Article

Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells.

Published in:

Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1276-1

By:

Izhnin, Ihor;
Nesmelov, Sergey;
Dzyadukh, Stanislav;
Voitsekhovskii, Alexander;
Gorn, Dmitry;
Dvoretsky, Sergey;
Mikhailov, Nikolaj

Publication type:

Article

Reduced Contact Resistance Between Metal and n-Ge by Insertion of ZnO with Argon Plasma Treatment.

Published in:

Nanoscale Research Letters, 2018, v. 13, n. 1, p. 1, doi. 10.1186/s11671-018-2650-y

By:

Zhang, Yi;
Han, Genquan;
Wu, Hao;
Wang, Xiao;
Liu, Yan;
Zhang, Jincheng;
Liu, Huan;
Zheng, Haihua;
Chen, Xue;
Liu, Chang;
Hao, Yue

Publication type:

Article

Analysis of interface states and series resistance for Al/PVA:n-CdS nanocomposite metal-semiconductor and metal-insulator-semiconductor diode structures.

Published in:

Applied Physics A: Materials Science & Processing, 2013, v. 113, n. 2, p. 491, doi. 10.1007/s00339-013-7552-3

By:

Sharma, Mamta;
Tripathi, S.

Publication type:

Article

Radiation Sensitivity Modeling Technique of Sensors' Mis-Transistor Elements.

Published in:

Automation & Remote Control, 2018, v. 79, n. 1, p. 180, doi. 10.1134/S0005117918010150

By:

Podlepetsky, B.;
Bakerenkov, A.;
Sukhoroslova, Yu.

Publication type:

Article

The forming process in resistive-memory elements based on metal-insulator-semiconductor structures.

Published in:

Technical Physics Letters, 2014, v. 40, n. 10, p. 837, doi. 10.1134/S1063785014100137

By:

Tikhov, S.;
Gorshkov, O.;
Antonov, I.;
Kasatkin, A.;
Koryazhkina, M.

Publication type:

Article

Analysis of the electroluminescence features of silicon metal-insulator-semiconductor structures as a tool for diagnostics of the injection properties of a dielectric layer.

Published in:

Technical Physics Letters, 2013, v. 39, n. 10, p. 878, doi. 10.1134/S1063785013100040

By:

Illarionov, Yu.;
Vexler, M.;
Isakov, D.;
Fedorov, V.;
Sing, Yew

Publication type:

Article

A General Strategy to Achieve Colossal Permittivity and Low Dielectric Loss Through Constructing Insulator/Semiconductor/Insulator Multilayer Structures.

Published in:

Journal of Low Temperature Physics, 2018, v. 192, n. 5/6, p. 346, doi. 10.1007/s10909-018-1985-1

By:

Liu, Kai;
Sun, Yalong;
Zheng, Fengang;
Tse, Mei-Yan;
Sun, Qingbo;
Liu, Yun;
Hao, Jianhua

Publication type:

Article

Quasi-stationary electron and ion processes in dielectric films and diagnostics of films.

Published in:

Journal of Communications Technology & Electronics, 2013, v. 58, n. 9, p. 956, doi. 10.1134/S1064226913090027

By:

Dmitriev, S. G.

Publication type:

Article

Passivation of aluminium-n+ silicon contacts for solar cells by ultrathin Al2O3 and SiO2 dielectric layers.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 11, p. 946, doi. 10.1002/pssr.201308115

By:

Bullock, James;
Yan, Di;
Cuevas, Andrés

Publication type:

Article

Finite Element Analysis of Optically Controlled MIS Slow Wave Line using High Frequency Structure Simulator.

Published in:

International Journal of Microwave & Optical Technology, 2015, v. 10, n. 3, p. 211

By:

Tomar, Raghbendra Singh;
Bhadauria, Avanish;
Sharma, Enakshi Khular;
Verma, A. K.

Publication type:

Article

Fabrication and characterization of AlN metal-insulator-semiconductor grown Si substrate.

Published in:

Modern Physics Letters B, 2017, v. 31, n. 33, p. -1, doi. 10.1142/S0217984917503134

By:

Mahyuddin, A.;
Azrina, A.;
Mohd Yusoff, M. Z.;
Hassan, Z.

Publication type:

Article

Decoupling of epitaxy-related trapping effects in AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 5, p. 1222, doi. 10.1002/pssa.201532752

By:

Huber, Martin;
Curatola, Gilberto;
Pozzovivo, Gianmauro;
Daumiller, Ingo;
Knuuttila, Lauri;
Silvestri, Marco;
Bonanni, Alberta;
Lundskog, Anders

Publication type:

Article

Diode Polarization and Resistive Switching in Metal/TlGaSe2 Semiconductor/Metal Devices.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2007, doi. 10.1134/S1063782618160273

By:

Seyidov, MirHasan Yu.;
Suleymanov, R. A.;
Şale, Yasin;
Kandemir, Buket Bilgen

Publication type:

Article

Modulation of the Charge of Germanium MIS Structures with Fluorine-Containing Insulators.

Published in:

Semiconductors, 2018, v. 52, n. 8, p. 1068, doi. 10.1134/S1063782618080201

By:

Shalimova, M. B.

Publication type:

Article

Specific features of the capacitance-voltage characteristics of a Cu-SiO- p-InSb MIS structure.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 367, doi. 10.1134/S1063782617030022

By:

Aliev, R.;
Gajiev, G.;
Gadzhialiev, M.;
Ismailov, A.;
Pirmagomedov, Z.

Publication type:

Article

Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide.

Published in:

Semiconductors, 2015, v. 49, n. 4, p. 472, doi. 10.1134/S1063782615040120

By:

Goldman, E.;
Levashova, A.;
Levashov, S.;
Chucheva, G.

Publication type:

Article

Determination of the diffusion length of minority charge carriers in a semiconductor from the dynamic nonequilibrium I- V characteristics of MIS structures.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 875, doi. 10.1134/S1063782614070161

By:

Popov, V.

Publication type:

Article

Dopant in Near-Surface Semiconductor Layers of Metal-Insulator-Semiconductor Structures Based on Graded-Gap p-HgCdTe Grown by Molecular-Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 2, p. 881, doi. 10.1007/s11664-015-4239-x

By:

Voitsekhovskii, A.;
Nesmelov, S.;
Dzyadukh, S.

Publication type:

Article

Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2835, doi. 10.1007/s11664-015-3692-x

By:

Nejm, Razan;
Ayesh, Ahmad;
Zeze, Dagou;
Sleiman, Adam;
Mabrook, Mohammed;
Al-Ghaferi, Amal;
Hussein, Mousa

Publication type:

Article

Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-HgCdTe Grown by Molecular Beam Epitaxy.

Published in:

Russian Physics Journal, 2016, v. 59, n. 2, p. 284, doi. 10.1007/s11182-016-0769-9

By:

Voitsekhovskii, A.;
Nesmelov, S.;
Dzyadukh, S.

Publication type:

Article

Effect of Pulse Nanosecond Volume Discharge in Air at Atmospheric Pressure on Electrical Properties of Mis Structures Based on p-HgCdTe Grown by Molecular Beam Epitaxy.

Published in:

Russian Physics Journal, 2015, v. 58, n. 7, p. 970, doi. 10.1007/s11182-015-0597-3

By:

Voitsekhovskii, A.;
Nesmelov, S.;
Dzyadukh, S.;
Grigor'ev, D.;
Tarasenko, V.;
Shulepov, M.

Publication type:

Article

Hysteresis Phenomena in mis Structures Based on Graded-Gap MBE Hgcdte with a Two-Layer Plasma-Chemical Insulator SIO/SIN.

Published in:

Russian Physics Journal, 2015, v. 58, n. 4, p. 540, doi. 10.1007/s11182-015-0532-7

By:

Voitsekhovskii, А.;
Nesmelov, S.;
Dzyadukh, S.

Publication type:

Article

Admittance in MIS Structures Based on Graded-GAP MBE p-HgCdTe ( x = 0.22-0.23) in the Strong Inversion Mode.

Published in:

Russian Physics Journal, 2014, v. 57, n. 8, p. 1070, doi. 10.1007/s11182-014-0345-0

By:

Voitsekhovskii, A.;
Nesmelov, S.;
Dzyadukh, S.

Publication type:

Article

Special Features of Admittance in Mis Structures Based on Graded-Gap MBE n-HgCdTe ( x = 0.31-0.32) in a Temperature Range OF 8-300 K.

Published in:

Russian Physics Journal, 2014, v. 57, n. 5, p. 633, doi. 10.1007/s11182-014-0286-7

By:

Voitsekhovskii, A.;
Nesmelov, S.;
Dzyadukh, S.;
Vasil'ev, V.;
Varavin, V.;
Dvoretskii, S.;
Мikhailov, N.;
Kuz'min, V.;
Remesnik, V.

Publication type:

Article

Differential Resistance of Space Charge Region in MIS Structures Based on Graded-Gap MBE n-HgCdTe ( x = 0.23) in a Wide Temperature Range.

Published in:

Russian Physics Journal, 2014, v. 57, n. 4, p. 536, doi. 10.1007/s11182-014-0272-0

By:

Voitsekhovskii, A.;
Nesmelov, S.;
Dzyadukh, S.;
Vasil'ev, V.;
Varavin, V.;
Dvoretskii, S.;
Мikhailov, N.;
Kuz'min, V.;
Remesnik, V.

Publication type:

Article

Stress‐and‐Sense Investigation of Memory Effect in Si‐NCs MIS Structures.

Published in:

Physica Status Solidi (B), 2018, v. 255, n. 10, p. N.PAG, doi. 10.1002/pssb.201700634

By:

Mazurak, Andrzej;
Jasiński, Jakub;
Mroczyński, Robert

Publication type:

Article

An electrodeposited inhomogeneous metal-insulator-semiconductor junction for efficient photoelectrochemical water oxidation.

Published in:

Nature Materials, 2015, v. 14, n. 11, p. 1150, doi. 10.1038/nmat4408

By:

Hill, James C.;
Landers, Alan T.;
Switzer, Jay A.

Publication type:

Article

Works matching DE "METAL-insulator-semiconductor structures"

Study of CBD-CdS/CZTGSe solar cells using different Cd sources: behavior of devices as a MIS structure.

Single-Walled Carbon-Nanotubes-Based Organic Memory Structures.

A novel GaN MIS‐HEMT with a floating clamp electrode for suppressing short‐channel effect.

EVOLUTION OF COPPER(II) OXIDE NANOSTRUCTURES IN POROUS GLASS MATRIX.

Influence of Si3N4 layer on the electrical properties of Au/n-4H SiC diodes.

High‐Performance and Stable Silicon Photoanode Modified by Crystalline Ni@ Amorphous Co Core‐Shell Nanoparticles.

Admittance Investigation of MIS Structures with HgTe-Based Single Quantum Wells.

Reduced Contact Resistance Between Metal and n-Ge by Insertion of ZnO with Argon Plasma Treatment.

Analysis of interface states and series resistance for Al/PVA:n-CdS nanocomposite metal-semiconductor and metal-insulator-semiconductor diode structures.

Radiation Sensitivity Modeling Technique of Sensors' Mis-Transistor Elements.

The forming process in resistive-memory elements based on metal-insulator-semiconductor structures.

Analysis of the electroluminescence features of silicon metal-insulator-semiconductor structures as a tool for diagnostics of the injection properties of a dielectric layer.

A General Strategy to Achieve Colossal Permittivity and Low Dielectric Loss Through Constructing Insulator/Semiconductor/Insulator Multilayer Structures.

Quasi-stationary electron and ion processes in dielectric films and diagnostics of films.

Passivation of aluminium-n<sup>+</sup> silicon contacts for solar cells by ultrathin Al<sub>2</sub>O<sub>3</sub> and SiO<sub>2</sub> dielectric layers.

Finite Element Analysis of Optically Controlled MIS Slow Wave Line using High Frequency Structure Simulator.

Fabrication and characterization of AlN metal-insulator-semiconductor grown Si substrate.

Decoupling of epitaxy-related trapping effects in AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors.

Diode Polarization and Resistive Switching in Metal/TlGaSe<sub>2</sub> Semiconductor/Metal Devices.

Modulation of the Charge of Germanium MIS Structures with Fluorine-Containing Insulators.

Specific features of the capacitance-voltage characteristics of a Cu-SiO- p-InSb MIS structure.

Features of high-frequency measurements of the impedance of metal-insulator-semiconductor structures with an ultrathin oxide.

Determination of the diffusion length of minority charge carriers in a semiconductor from the dynamic nonequilibrium I- V characteristics of MIS structures.

Dopant in Near-Surface Semiconductor Layers of Metal-Insulator-Semiconductor Structures Based on Graded-Gap p-HgCdTe Grown by Molecular-Beam Epitaxy.

Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles.

Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-HgCdTe Grown by Molecular Beam Epitaxy.

Effect of Pulse Nanosecond Volume Discharge in Air at Atmospheric Pressure on Electrical Properties of Mis Structures Based on p-HgCdTe Grown by Molecular Beam Epitaxy.

Hysteresis Phenomena in mis Structures Based on Graded-Gap MBE Hgcdte with a Two-Layer Plasma-Chemical Insulator SIO/SIN.

Admittance in MIS Structures Based on Graded-GAP MBE p-HgCdTe ( x = 0.22-0.23) in the Strong Inversion Mode.

Special Features of Admittance in Mis Structures Based on Graded-Gap MBE n-HgCdTe ( x = 0.31-0.32) in a Temperature Range OF 8-300 K.

Differential Resistance of Space Charge Region in MIS Structures Based on Graded-Gap MBE n-HgCdTe ( x = 0.23) in a Wide Temperature Range.

Stress‐and‐Sense Investigation of Memory Effect in Si‐NCs MIS Structures.

An electrodeposited inhomogeneous metal-insulator-semiconductor junction for efficient photoelectrochemical water oxidation.