Works matching DE "METAL-insulator-semiconductor devices"

Results: 35

Graphene/SiO2/p-GaN Diodes: An Advanced Economical Alternative for Electrically Tunable Light Emitters.
Published in:
Advanced Functional Materials, 2013, v. 23, n. 32, p. 4043, doi. 10.1002/adfm.201203035
By:
- Chang, Che‐Wei;
- Tan, Wei‐Chun;
- Lu, Meng‐Lin;
- Pan, Tai‐Chun;
- Yang, Ying‐Jay;
- Chen, Yang‐Fang
Publication type:
Article
Electrical Characterization of TiO2 Insulator Based Pd / TiO2 / Si MIS Structure Deposited by Sol-Gel Process.
Published in:
Journal of Nano- & Electronic Physics, 2013, v. 5, n. 1, p. 01021-1
By:
- Shubham, Kumar;
- Khan, R. U.
Publication type:
Article
The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal.
Published in:
Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2016, v. 6, n. 3, p. 57, doi. 10.21597/jist.2016321840
By:
- ORAK, İkram;
- KOÇYİĞİT, Adem
Publication type:
Article
A Robust Cooling Platform for NIS Junction Refrigeration and sub-Kelvin Cryogenic Systems.
Published in:
Journal of Low Temperature Physics, 2014, v. 176, n. 3/4, p. 243, doi. 10.1007/s10909-014-1136-2
By:
- Wilson, B.;
- Atlas, M.;
- Lowell, P.;
- Moyerman, S.;
- Stebor, N.;
- Ullom, J.;
- Keating, B.
Publication type:
Article
Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with AlO as Dielectric Layers.
Published in:
Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1232-0
By:
- Wang, X.;
- Zhang, G.;
- Xu, Y.;
- Gan, X.;
- Chen, C.;
- Wang, Z.;
- Wang, Y.;
- Wang, J.;
- Wang, T.;
- Wu, H.;
- Liu, C.
Publication type:
Article
Low-Cost ZnO:YAG-Based Metal-Insulator-Semiconductor White Light-Emitting Diodes with Various Insulators.
Published in:
International Journal of Photoenergy, 2014, p. 1, doi. 10.1155/2014/959620
By:
- Lung-Chien Chen;
- Chih-Hung Hsu;
- Xiuyu Zhang;
- Jia-Ren Wu
Publication type:
Article
Passivating electron‐selective contacts for silicon solar cells based on an a‐Si:H/TiOx stack and a low work function metal.
Published in:
Progress in Photovoltaics, 2018, v. 26, n. 10, p. 835, doi. 10.1002/pip.3023
By:
- Cho, Jinyoun;
- Melskens, Jimmy;
- Debucquoy, Maarten;
- Recamán Payo, Maria;
- Jambaldinni, Shruti;
- Bearda, Twan;
- Gordon, Ivan;
- Szlufcik, Jozef;
- Kessels, W. M. M.;
- Poortmans, Jef
Publication type:
Article
The Effect of Interface States and Series Resistance on Current-Voltage Characteristics in (MIS) Schottky Diodes.
Published in:
Afyon Kocatepe University Journal of Science & Engineering / Afyon Kocatepe Üniversitesi Fen Ve Mühendislik Bilimleri Dergisi, 2015, v. 15, n. 2, p. 1, doi. 10.5578/fmbd.9657
By:
- Zeyrek, Sedat
Publication type:
Article
Current-Mode Precision Full-Wave Rectifier Circuits.
Published in:
Circuits, Systems & Signal Processing, 2017, v. 36, n. 11, p. 4293, doi. 10.1007/s00034-017-0531-8
By:
- Agrawal, Deepak;
- Maheshwari, Sudhanshu
Publication type:
Article
A novel GaN MIS‐HEMT with a floating clamp electrode for suppressing short‐channel effect.
Published in:
Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 19, p. 747, doi. 10.1049/ell2.12246
By:
- Shi, Yijun;
- Wang, Hongyue
Publication type:
Article
Diode Polarization and Resistive Switching in Metal/TlGaSe2 Semiconductor/Metal Devices.
Published in:
Semiconductors, 2018, v. 52, n. 16, p. 2007, doi. 10.1134/S1063782618160273
By:
- Seyidov, MirHasan Yu.;
- Suleymanov, R. A.;
- Şale, Yasin;
- Kandemir, Buket Bilgen
Publication type:
Article
Physical properties of metal-insulator-semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1589, doi. 10.1134/S1063782616120228
By:
- Tikhov, S.;
- Gorshkov, O.;
- Koryazhkina, M.;
- Kasatkin, A.;
- Antonov, I.;
- Vihrova, O.;
- Morozov, A.
Publication type:
Article
Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands.
Published in:
Semiconductors, 2016, v. 50, n. 11, p. 1475, doi. 10.1134/S1063782616110245
By:
- Shmagin, V.;
- Vdovichev, S.;
- Morozova, E.;
- Novikov, A.;
- Shaleev, M.;
- Shengurov, D.;
- Krasilnik, Z.
Publication type:
Article
Specific features of the current-voltage characteristics of SiO/4 H-SiC MIS structures with phosphorus implanted into silicon carbide.
Published in:
Semiconductors, 2016, v. 50, n. 1, p. 103, doi. 10.1134/S1063782616010152
By:
- Mikhaylova, A.;
- Afanasyev, A.;
- Ilyin, V.;
- Luchinin, V.;
- Sledziewski, T.;
- Reshanov, S.;
- Schöner, A.;
- Krieger, M.
Publication type:
Article
Adaptation of the model of tunneling in a metal/CaF/Si(111) system for use in industrial simulators of MIS devices.
Published in:
Semiconductors, 2015, v. 49, n. 2, p. 259, doi. 10.1134/S1063782615020207
By:
- Vexler, M.;
- Illarionov, Yu.;
- Tyaginov, S.;
- Grasser, T.
Publication type:
Article
Electrical phenomena in a metal/nanooxide/ p-silicon structure during its transformation to a resonant-tunneling diode.
Published in:
Semiconductors, 2013, v. 47, n. 8, p. 1084, doi. 10.1134/S1063782613080083
By:
- Kareva, G.;
- Vexler, M.
Publication type:
Article
Changes induced in a ZnS:Cr-based electroluminescent waveguide structure by intrinsic near-infrared laser radiation.
Published in:
Semiconductors, 2013, v. 47, n. 8, p. 1116, doi. 10.1134/S1063782613080216
By:
- Vlasenko, N.;
- Oleksenko, P.;
- Mukhlyo, M.;
- Veligura, L.
Publication type:
Article
A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures.
Published in:
Semiconductors, 2013, v. 47, n. 5, p. 686, doi. 10.1134/S1063782613050230
By:
- Vexler, M.;
- Tyaginov, S.;
- Illarionov, Yu.;
- Sing, Yew;
- Shenp, Ang;
- Fedorov, V.;
- Isakov, D.
Publication type:
Article
Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods.
Published in:
Semiconductors, 2013, v. 47, n. 5, p. 641, doi. 10.1134/S1063782613050072
By:
- Berdnikov, A.;
- Gusev, V.;
- Mironenko, A.;
- Popov, A.;
- Perminov, A.;
- Rudy, A.;
- Chernomordick, V.
Publication type:
Article
The electrical characterization of metal–insulator–semiconductor device with β-naphthol orange interface.
Published in:
Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 26, p. 20900, doi. 10.1007/s10854-022-08897-0
By:
- Özerden, Enise;
- Özden, Pınar;
- Afşin Kariper, İ.;
- Pakma, Osman
Publication type:
Article
Gate modeling of metal-insulator-semiconductor devices based on ultra-thin atomic-layer deposited TiO2.
Published in:
Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 18, p. 15761, doi. 10.1007/s10854-018-9240-8
By:
- Uribe-Vargas, Hector;
- Molina-Reyes, Joel;
- Romero-Morán, Alejandra;
- Ortega, Eduardo;
- Ponce, Arturo
Publication type:
Article
Silicon nanowires - a versatile technology platform.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 793, doi. 10.1002/pssr.201307247
By:
- Mikolajick, Thomas;
- Heinzig, André;
- Trommer, Jens;
- Pregl, Sebastian;
- Grube, Matthias;
- Cuniberti, Gianaurelio;
- Weber, Walter M.
Publication type:
Article
16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator.
Published in:
Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 15, p. 1201, doi. 10.1049/el.2015.1018
By:
- Zhili Zhang;
- Guohao Yu;
- Xiaodong Zhang;
- Shuxin Tan;
- Dongdong Wu;
- Kai Fu;
- Wei Huang;
- Yong Cai;
- Baoshun Zhang
Publication type:
Article
Single-crystalline silicon quantum well embedded in SiO2 thin layer for broadband photodetection and energy harvesting.
Published in:
Applied Physics A: Materials Science & Processing, 2023, v. 129, n. 11, p. 1, doi. 10.1007/s00339-023-07066-2
By:
- Aouassa, Mansour;
- Bouabdellaoui, Mohammed;
- Yahyaoui, Makram;
- Ettaghzouti, Thouraya;
- Kallel, Tarak;
- Althobaiti, Ibrahim
Publication type:
Article
HfO x /Ge RRAM with High ON/OFF Ratio and Good Endurance.
Published in:
Electronics (2079-9292), 2022, v. 11, n. 22, p. 3820, doi. 10.3390/electronics11223820
By:
- Wei, Na;
- Ding, Xiang;
- Gao, Shifan;
- Wu, Wenhao;
- Zhao, Yi
Publication type:
Article
Electrically pumped ultraviolet lasing from ZnO in metal-insulator-semi devices.
Published in:
Applied Physics A: Materials Science & Processing, 2013, v. 111, n. 3, p. 689, doi. 10.1007/s00339-013-7710-7
By:
- Wu, Kewei;
- Ding, Ping;
- Lu, Yangfan;
- Pan, Xinhua;
- He, Haiping;
- Huang, Jingyun;
- Zhao, Binghui;
- Chen, Cong;
- Chen, Lingxiang;
- Ye, Zhizhen
Publication type:
Article
Dark Current Evolution in Irradiated MWIR HgCdTe Photodiodes.
Published in:
Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7103, doi. 10.1007/s11664-023-10701-6
By:
- Dinand, S.;
- Gravrand, O.;
- Baier, N.;
- De Borniol, E.;
- Rochette, F.;
- Rizzolo, S.;
- Saint-Pe, O.;
- Goiffon, V.
Publication type:
Article
DLTS Analysis and Interface Engineering of Solution Route Fabricated Zirconia Based MIS Devices Using Plasma Treatment.
Published in:
Journal of Electronic Materials, 2018, v. 47, n. 2, p. 955, doi. 10.1007/s11664-017-5938-2
By:
- Kumar, Arvind;
- Mondal, Sandip;
- Koteswara Rao, K.
Publication type:
Article
Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/AlO/GaN MIS Diode.
Published in:
Journal of Electronic Materials, 2016, v. 45, n. 11, p. 5655, doi. 10.1007/s11664-016-4809-6
By:
- Reddy, M.;
- Puneetha, Peddathimula;
- Reddy, V.;
- Lee, Jung-Hee;
- Jeong, Seong-Hoon;
- Park, Chinho
Publication type:
Article
GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH4)2SX + UV Interface Treatment Technology.
Published in:
Active & Passive Electronic Components, 2012, p. 1, doi. 10.1155/2012/459043
By:
- Chao-Wei Lin;
- Hsien-Chin Chiu
Publication type:
Article
High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment.
Published in:
Advances in Condensed Matter Physics, 2015, v. 2015, p. 1, doi. 10.1155/2015/267680
By:
- Yang, Chao;
- Xiong, Jiayun;
- Wei, Jie;
- Wu, Junfeng;
- Zhang, Bo;
- Luo, Xiaorong
Publication type:
Article
Simplified inelastic electron tunneling spectroscopy based on low-noise derivatives.
Published in:
Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-21302-4
By:
- Kesarwani, Shankar;
- Misra, Shobhna;
- Saha, Dipankar;
- Della Rocca, Maria Luisa;
- Roy, Indrajit;
- Ganguly, Swaroop;
- Mahajan, Ashutosh
Publication type:
Article
Improvement of Au‐Free, Ti/Al/W Ohmic Contact on AlGaN/GaN Heterostructure Featuring a Thin‐Ti Layer and Low Temperature Annealing.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 13, p. 1, doi. 10.1002/pssa.201700825
By:
- Yoshida, Takahiro;
- Egawa, Takashi
Publication type:
Article
Integrated enhancement/depletion-mode GaN MIS-HEMTs for high-speed mixed-signal applications.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 5, p. 1241, doi. 10.1002/pssa.201532805
By:
- Gao, Tao;
- Xu, Ruimin;
- Kong, Yuechan;
- Zhou, Jianjun;
- Zhang, Kai;
- Kong, Cen;
- Peng, Daqing;
- Chen, Tangsheng
Publication type:
Article
Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture).
Published in:
Angewandte Chemie International Edition, 2015, v. 54, n. 27, p. 7764, doi. 10.1002/anie.201501651
By:
- Amano, Hiroshi
Publication type:
Article

Works matching DE "METAL-insulator-semiconductor devices"

Graphene/SiO<sub>2</sub>/p-GaN Diodes: An Advanced Economical Alternative for Electrically Tunable Light Emitters.

Electrical Characterization of TiO<sub>2</sub> Insulator Based Pd / TiO<sub>2</sub> / Si MIS Structure Deposited by Sol-Gel Process.

The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal.

A Robust Cooling Platform for NIS Junction Refrigeration and sub-Kelvin Cryogenic Systems.

Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with AlO as Dielectric Layers.

Low-Cost ZnO:YAG-Based Metal-Insulator-Semiconductor White Light-Emitting Diodes with Various Insulators.

Passivating electron‐selective contacts for silicon solar cells based on an a‐Si:H/TiO<sub>x</sub> stack and a low work function metal.

The Effect of Interface States and Series Resistance on Current-Voltage Characteristics in (MIS) Schottky Diodes.

Current-Mode Precision Full-Wave Rectifier Circuits.

A novel GaN MIS‐HEMT with a floating clamp electrode for suppressing short‐channel effect.

Diode Polarization and Resistive Switching in Metal/TlGaSe<sub>2</sub> Semiconductor/Metal Devices.

Physical properties of metal-insulator-semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer.

Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands.

Specific features of the current-voltage characteristics of SiO/4 H-SiC MIS structures with phosphorus implanted into silicon carbide.

Adaptation of the model of tunneling in a metal/CaF/Si(111) system for use in industrial simulators of MIS devices.

Electrical phenomena in a metal/nanooxide/ p-silicon structure during its transformation to a resonant-tunneling diode.

Changes induced in a ZnS:Cr-based electroluminescent waveguide structure by intrinsic near-infrared laser radiation.

A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures.

Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods.

The electrical characterization of metal–insulator–semiconductor device with β-naphthol orange interface.

Gate modeling of metal-insulator-semiconductor devices based on ultra-thin atomic-layer deposited TiO<sub>2</sub>.

Silicon nanowires - a versatile technology platform.

16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si<sub>3</sub>N<sub>4</sub> as gate insulator.

Single-crystalline silicon quantum well embedded in SiO<sub>2</sub> thin layer for broadband photodetection and energy harvesting.

HfO x /Ge RRAM with High ON/OFF Ratio and Good Endurance.

Electrically pumped ultraviolet lasing from ZnO in metal-insulator-semi devices.

Dark Current Evolution in Irradiated MWIR HgCdTe Photodiodes.

DLTS Analysis and Interface Engineering of Solution Route Fabricated Zirconia Based MIS Devices Using Plasma Treatment.

Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/AlO/GaN MIS Diode.

GaN-Based High-k Praseodymium Oxide Gate MISFETs with P<sub>2</sub>S<sub>5</sub>/(NH<sub>4</sub>)<sub>2</sub>S<sub>X</sub> + UV Interface Treatment Technology.

High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment.

Simplified inelastic electron tunneling spectroscopy based on low-noise derivatives.

Improvement of Au‐Free, Ti/Al/W Ohmic Contact on AlGaN/GaN Heterostructure Featuring a Thin‐Ti Layer and Low Temperature Annealing.

Integrated enhancement/depletion-mode GaN MIS-HEMTs for high-speed mixed-signal applications.

Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture).