Works matching DE "METAL-insulator-semiconductor devices"

Results: 36

Graphene/SiO2/p-GaN Diodes: An Advanced Economical Alternative for Electrically Tunable Light Emitters.

Published in:

Advanced Functional Materials, 2013, v. 23, n. 32, p. 4043, doi. 10.1002/adfm.201203035

By:

Chang, Che‐Wei;
Tan, Wei‐Chun;
Lu, Meng‐Lin;
Pan, Tai‐Chun;
Yang, Ying‐Jay;
Chen, Yang‐Fang

Publication type:

Article

The electrical characterization of metal–insulator–semiconductor device with β-naphthol orange interface.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 26, p. 20900, doi. 10.1007/s10854-022-08897-0

By:

Özerden, Enise;
Özden, Pınar;
Afşin Kariper, İ.;
Pakma, Osman

Publication type:

Article

Gate modeling of metal-insulator-semiconductor devices based on ultra-thin atomic-layer deposited TiO2.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 18, p. 15761, doi. 10.1007/s10854-018-9240-8

By:

Uribe-Vargas, Hector;
Molina-Reyes, Joel;
Romero-Morán, Alejandra;
Ortega, Eduardo;
Ponce, Arturo

Publication type:

Article

GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH4)2SX + UV Interface Treatment Technology.

Published in:

Active & Passive Electronic Components, 2012, p. 1, doi. 10.1155/2012/459043

By:

Chao-Wei Lin;
Hsien-Chin Chiu

Publication type:

Article

High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment.

Published in:

Advances in Condensed Matter Physics, 2015, v. 2015, p. 1, doi. 10.1155/2015/267680

By:

Yang, Chao;
Xiong, Jiayun;
Wei, Jie;
Wu, Junfeng;
Zhang, Bo;
Luo, Xiaorong

Publication type:

Article

Current-Mode Precision Full-Wave Rectifier Circuits.

Published in:

Circuits, Systems & Signal Processing, 2017, v. 36, n. 11, p. 4293, doi. 10.1007/s00034-017-0531-8

By:

Agrawal, Deepak;
Maheshwari, Sudhanshu

Publication type:

Article

A novel GaN MIS‐HEMT with a floating clamp electrode for suppressing short‐channel effect.

Published in:

Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 19, p. 747, doi. 10.1049/ell2.12246

By:

Shi, Yijun;
Wang, Hongyue

Publication type:

Article

Low-Cost ZnO:YAG-Based Metal-Insulator-Semiconductor White Light-Emitting Diodes with Various Insulators.

Published in:

International Journal of Photoenergy, 2014, p. 1, doi. 10.1155/2014/959620

By:

Lung-Chien Chen;
Chih-Hung Hsu;
Xiuyu Zhang;
Jia-Ren Wu

Publication type:

Article

Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with AlO as Dielectric Layers.

Published in:

Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1232-0

By:

Wang, X.;
Zhang, G.;
Xu, Y.;
Gan, X.;
Chen, C.;
Wang, Z.;
Wang, Y.;
Wang, J.;
Wang, T.;
Wu, H.;
Liu, C.

Publication type:

Article

Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture).

Published in:

Angewandte Chemie International Edition, 2015, v. 54, n. 27, p. 7764, doi. 10.1002/anie.201501651

By:

Amano, Hiroshi

Publication type:

Article

16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 15, p. 1201, doi. 10.1049/el.2015.1018

By:

Zhili Zhang;
Guohao Yu;
Xiaodong Zhang;
Shuxin Tan;
Dongdong Wu;
Kai Fu;
Wei Huang;
Yong Cai;
Baoshun Zhang

Publication type:

Article

Electrically pumped ultraviolet lasing from ZnO in metal-insulator-semi devices.

Published in:

Applied Physics A: Materials Science & Processing, 2013, v. 111, n. 3, p. 689, doi. 10.1007/s00339-013-7710-7

By:

Wu, Kewei;
Ding, Ping;
Lu, Yangfan;
Pan, Xinhua;
He, Haiping;
Huang, Jingyun;
Zhao, Binghui;
Chen, Cong;
Chen, Lingxiang;
Ye, Zhizhen

Publication type:

Article

A Robust Cooling Platform for NIS Junction Refrigeration and sub-Kelvin Cryogenic Systems.

Published in:

Journal of Low Temperature Physics, 2014, v. 176, n. 3/4, p. 243, doi. 10.1007/s10909-014-1136-2

By:

Wilson, B.;
Atlas, M.;
Lowell, P.;
Moyerman, S.;
Stebor, N.;
Ullom, J.;
Keating, B.

Publication type:

Article

HfO x /Ge RRAM with High ON/OFF Ratio and Good Endurance.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 22, p. 3820, doi. 10.3390/electronics11223820

By:

Wei, Na;
Ding, Xiang;
Gao, Shifan;
Wu, Wenhao;
Zhao, Yi

Publication type:

Article

Silicon nanowires - a versatile technology platform.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 793, doi. 10.1002/pssr.201307247

By:

Mikolajick, Thomas;
Heinzig, André;
Trommer, Jens;
Pregl, Sebastian;
Grube, Matthias;
Cuniberti, Gianaurelio;
Weber, Walter M.

Publication type:

Article

The Effect of Interface States and Series Resistance on Current-Voltage Characteristics in (MIS) Schottky Diodes.

Published in:

Afyon Kocatepe University Journal of Science & Engineering / Afyon Kocatepe Üniversitesi Fen Ve Mühendislik Bilimleri Dergisi, 2015, v. 15, n. 2, p. 1, doi. 10.5578/fmbd.9657

By:

Zeyrek, Sedat

Publication type:

Article

Simplified inelastic electron tunneling spectroscopy based on low-noise derivatives.

Published in:

Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-21302-4

By:

Kesarwani, Shankar;
Misra, Shobhna;
Saha, Dipankar;
Della Rocca, Maria Luisa;
Roy, Indrajit;
Ganguly, Swaroop;
Mahajan, Ashutosh

Publication type:

Article

Electrical Characterization of TiO2 Insulator Based Pd / TiO2 / Si MIS Structure Deposited by Sol-Gel Process.

Published in:

Journal of Nano- & Electronic Physics, 2013, v. 5, n. 1, p. 01021-1

By:

Shubham, Kumar;
Khan, R. U.

Publication type:

Article

Improvement of Au‐Free, Ti/Al/W Ohmic Contact on AlGaN/GaN Heterostructure Featuring a Thin‐Ti Layer and Low Temperature Annealing.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 13, p. 1, doi. 10.1002/pssa.201700825

By:

Yoshida, Takahiro;
Egawa, Takashi

Publication type:

Article

Integrated enhancement/depletion-mode GaN MIS-HEMTs for high-speed mixed-signal applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 5, p. 1241, doi. 10.1002/pssa.201532805

By:

Gao, Tao;
Xu, Ruimin;
Kong, Yuechan;
Zhou, Jianjun;
Zhang, Kai;
Kong, Cen;
Peng, Daqing;
Chen, Tangsheng

Publication type:

Article

Diode Polarization and Resistive Switching in Metal/TlGaSe2 Semiconductor/Metal Devices.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2007, doi. 10.1134/S1063782618160273

By:

Seyidov, MirHasan Yu.;
Suleymanov, R. A.;
Şale, Yasin;
Kandemir, Buket Bilgen

Publication type:

Article

Physical properties of metal-insulator-semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1589, doi. 10.1134/S1063782616120228

By:

Tikhov, S.;
Gorshkov, O.;
Koryazhkina, M.;
Kasatkin, A.;
Antonov, I.;
Vihrova, O.;
Morozov, A.

Publication type:

Article

Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1475, doi. 10.1134/S1063782616110245

By:

Shmagin, V.;
Vdovichev, S.;
Morozova, E.;
Novikov, A.;
Shaleev, M.;
Shengurov, D.;
Krasilnik, Z.

Publication type:

Article

Specific features of the current-voltage characteristics of SiO/4 H-SiC MIS structures with phosphorus implanted into silicon carbide.

Published in:

Semiconductors, 2016, v. 50, n. 1, p. 103, doi. 10.1134/S1063782616010152

By:

Mikhaylova, A.;
Afanasyev, A.;
Ilyin, V.;
Luchinin, V.;
Sledziewski, T.;
Reshanov, S.;
Schöner, A.;
Krieger, M.

Publication type:

Article

Adaptation of the model of tunneling in a metal/CaF/Si(111) system for use in industrial simulators of MIS devices.

Published in:

Semiconductors, 2015, v. 49, n. 2, p. 259, doi. 10.1134/S1063782615020207

By:

Vexler, M.;
Illarionov, Yu.;
Tyaginov, S.;
Grasser, T.

Publication type:

Article

Electrical phenomena in a metal/nanooxide/ p-silicon structure during its transformation to a resonant-tunneling diode.

Published in:

Semiconductors, 2013, v. 47, n. 8, p. 1084, doi. 10.1134/S1063782613080083

By:

Kareva, G.;
Vexler, M.

Publication type:

Article

Changes induced in a ZnS:Cr-based electroluminescent waveguide structure by intrinsic near-infrared laser radiation.

Published in:

Semiconductors, 2013, v. 47, n. 8, p. 1116, doi. 10.1134/S1063782613080216

By:

Vlasenko, N.;
Oleksenko, P.;
Mukhlyo, M.;
Veligura, L.

Publication type:

Article

A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 686, doi. 10.1134/S1063782613050230

By:

Vexler, M.;
Tyaginov, S.;
Illarionov, Yu.;
Sing, Yew;
Shenp, Ang;
Fedorov, V.;
Isakov, D.

Publication type:

Article

Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 641, doi. 10.1134/S1063782613050072

By:

Berdnikov, A.;
Gusev, V.;
Mironenko, A.;
Popov, A.;
Perminov, A.;
Rudy, A.;
Chernomordick, V.

Publication type:

Article

Dark Current Evolution in Irradiated MWIR HgCdTe Photodiodes.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7103, doi. 10.1007/s11664-023-10701-6

By:

Dinand, S.;
Gravrand, O.;
Baier, N.;
De Borniol, E.;
Rochette, F.;
Rizzolo, S.;
Saint-Pe, O.;
Goiffon, V.

Publication type:

Article

DLTS Analysis and Interface Engineering of Solution Route Fabricated Zirconia Based MIS Devices Using Plasma Treatment.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 2, p. 955, doi. 10.1007/s11664-017-5938-2

By:

Kumar, Arvind;
Mondal, Sandip;
Koteswara Rao, K.

Publication type:

Article

Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/AlO/GaN MIS Diode.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 11, p. 5655, doi. 10.1007/s11664-016-4809-6

By:

Reddy, M.;
Puneetha, Peddathimula;
Reddy, V.;
Lee, Jung-Hee;
Jeong, Seong-Hoon;
Park, Chinho

Publication type:

Article

Passivating electron‐selective contacts for silicon solar cells based on an a‐Si:H/TiOx stack and a low work function metal.

Published in:

Progress in Photovoltaics, 2018, v. 26, n. 10, p. 835, doi. 10.1002/pip.3023

By:

Cho, Jinyoun;
Melskens, Jimmy;
Debucquoy, Maarten;
Recamán Payo, Maria;
Jambaldinni, Shruti;
Bearda, Twan;
Gordon, Ivan;
Szlufcik, Jozef;
Kessels, W. M. M.;
Poortmans, Jef

Publication type:

Article

The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal.

Published in:

Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2016, v. 6, n. 3, p. 57, doi. 10.21597/jist.2016321840

By:

ORAK, İkram;
KOÇYİĞİT, Adem

Publication type:

Article

Coexistence of memristive and memcapacitive characteristics in Pt/MgO/ZnO metal-insulator-semiconductor heterostructure device.

Published in:

Applied Physics A: Materials Science & Processing, 2025, v. 131, n. 4, p. 1, doi. 10.1007/s00339-025-08368-3

By:

Lv, Yinghao;
Guo, Xing;
Li, Xinmiao;
Song, Wenqing;
Zhang, Lei

Publication type:

Article

Single-crystalline silicon quantum well embedded in SiO2 thin layer for broadband photodetection and energy harvesting.

Published in:

Applied Physics A: Materials Science & Processing, 2023, v. 129, n. 11, p. 1, doi. 10.1007/s00339-023-07066-2

By:

Aouassa, Mansour;
Bouabdellaoui, Mohammed;
Yahyaoui, Makram;
Ettaghzouti, Thouraya;
Kallel, Tarak;
Althobaiti, Ibrahim

Publication type:

Article

Works matching DE "METAL-insulator-semiconductor devices"

Graphene/SiO<sub>2</sub>/p-GaN Diodes: An Advanced Economical Alternative for Electrically Tunable Light Emitters.

The electrical characterization of metal–insulator–semiconductor device with β-naphthol orange interface.

Gate modeling of metal-insulator-semiconductor devices based on ultra-thin atomic-layer deposited TiO<sub>2</sub>.

GaN-Based High-k Praseodymium Oxide Gate MISFETs with P<sub>2</sub>S<sub>5</sub>/(NH<sub>4</sub>)<sub>2</sub>S<sub>X</sub> + UV Interface Treatment Technology.

High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment.

Current-Mode Precision Full-Wave Rectifier Circuits.

A novel GaN MIS‐HEMT with a floating clamp electrode for suppressing short‐channel effect.

Low-Cost ZnO:YAG-Based Metal-Insulator-Semiconductor White Light-Emitting Diodes with Various Insulators.

Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with AlO as Dielectric Layers.

Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture).

16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si<sub>3</sub>N<sub>4</sub> as gate insulator.

Electrically pumped ultraviolet lasing from ZnO in metal-insulator-semi devices.

A Robust Cooling Platform for NIS Junction Refrigeration and sub-Kelvin Cryogenic Systems.

HfO x /Ge RRAM with High ON/OFF Ratio and Good Endurance.

Silicon nanowires - a versatile technology platform.

The Effect of Interface States and Series Resistance on Current-Voltage Characteristics in (MIS) Schottky Diodes.

Simplified inelastic electron tunneling spectroscopy based on low-noise derivatives.

Electrical Characterization of TiO<sub>2</sub> Insulator Based Pd / TiO<sub>2</sub> / Si MIS Structure Deposited by Sol-Gel Process.

Improvement of Au‐Free, Ti/Al/W Ohmic Contact on AlGaN/GaN Heterostructure Featuring a Thin‐Ti Layer and Low Temperature Annealing.

Integrated enhancement/depletion-mode GaN MIS-HEMTs for high-speed mixed-signal applications.

Diode Polarization and Resistive Switching in Metal/TlGaSe<sub>2</sub> Semiconductor/Metal Devices.

Physical properties of metal-insulator-semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer.

Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands.

Specific features of the current-voltage characteristics of SiO/4 H-SiC MIS structures with phosphorus implanted into silicon carbide.

Adaptation of the model of tunneling in a metal/CaF/Si(111) system for use in industrial simulators of MIS devices.

Electrical phenomena in a metal/nanooxide/ p-silicon structure during its transformation to a resonant-tunneling diode.

Changes induced in a ZnS:Cr-based electroluminescent waveguide structure by intrinsic near-infrared laser radiation.

A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures.

Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods.

Dark Current Evolution in Irradiated MWIR HgCdTe Photodiodes.

DLTS Analysis and Interface Engineering of Solution Route Fabricated Zirconia Based MIS Devices Using Plasma Treatment.

Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/AlO/GaN MIS Diode.

Passivating electron‐selective contacts for silicon solar cells based on an a‐Si:H/TiO<sub>x</sub> stack and a low work function metal.

The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal.

Coexistence of memristive and memcapacitive characteristics in Pt/MgO/ZnO metal-insulator-semiconductor heterostructure device.

Single-crystalline silicon quantum well embedded in SiO<sub>2</sub> thin layer for broadband photodetection and energy harvesting.