Works matching DE "METAL semiconductor field-effect transistors"

Results: 351

Physics-based Computational Optimization in Dopingless Vertical Nanowire TFET using Triple Metal Gate Architecture.

Published in:

Semiconductors, 2025, v. 59, n. 6, p. 521, doi. 10.1134/S1063782625600263

By:

Bhardwaj, Anjana;
Das, Amit;
Roy, Swarnima;
Khushboo;
Aman, Abhishek;
Raj, Geetanjali

Publication type:

Article

Investigating the Impact of Fe-Doped GaN and β-Ga2O3 Buffer Layers on a Laterally Scaled AlN/GaN HEMT Using Silicon Carbide Substrate for Next-Generation RF Electronics.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 2355, doi. 10.1007/s11664-024-11672-y

By:

Devi, K. Nirmala;
Hariprasad, S.;
Natarajan, Ramkumar;
Chinnaswamy, Sivamani;
Ravi, S.

Publication type:

Article

Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 9, p. 5555, doi. 10.1007/s11664-024-11289-1

By:

Lino, L.;
Saravana Kumar, R.;
Mohanbabu, A.;
Murugapandiyan, P.

Publication type:

Article

l-Arginine assisted preparation of Ag/ZnO nanocomposites with enhanced photocatalytic performance.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 5, p. 2775, doi. 10.1007/s10854-015-2758-0

By:

Chen, You-Cun;
Cheng, Jinnan;
Cheng, Jun;
Cheng, Si

Publication type:

Article

Microstructural and electrical characteristics of rapidly annealed Ni/Mo Schottky rectifiers on cleaned n-type GaN (0001) surface.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 3, p. 286, doi. 10.1007/s10854-010-0129-4

By:

Jyothi, I.;
Rajagopal Reddy, V.;
Choi, Chel-Jong

Publication type:

Article

Buffer-trapping effects on current slump in AlGaN/GaN HEMTs.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 735, doi. 10.1007/s10854-007-9399-x

By:

Nakajima, Atsushi;
Horio, Kazushige

Publication type:

Article

QUADRATURE PHASE SHIFTER USING ONE DUAL-GATE MESFET.

Published in:

Microwave & Optical Technology Letters, 1988, v. 1, n. 6, p. 196, doi. 10.1002/mop.4650010605

By:

Albinsson, B.;
Schöön, M.;
Vickes, H.-O.

Publication type:

Article

N-WAY MMIC REDUNDANT SWITCH.

Published in:

Microwave & Optical Technology Letters, 1988, v. 1, n. 3, p. 110, doi. 10.1002/mop.4650010311

By:

Bahl, Inder J.;
Griffin, Edward L.;
Willems, David A.

Publication type:

Article

DETERMINATION OF THE TRANSVERSE PROPAGATION DELAYS IN SINGLE-GATE GaAs MESFETs.

Published in:

Microwave & Optical Technology Letters, 1988, v. 1, n. 2, p. 51, doi. 10.1002/mop.4650010203

By:

Goel, A. K.

Publication type:

Article

STUDY OF MESFETS ON P-SUBSTRATES AND ON THIN P-LAYERS.

Published in:

Microwave & Optical Technology Letters, 1988, v. 1, n. 1, p. 32, doi. 10.1002/mop.4650010113

By:

El-Ghazaly, Samir;
Itoh, Tatsuo;
Salmer, George

Publication type:

Article

Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101406

By:

Yang, Jeong Yong;
Yeom, Min Jae;
Lee, Jaeyong;
Lee, Kyusang;
Park, Changkun;
Heo, Junseok;
Yoo, Geonwook

Publication type:

Article

Comprehensive Study on High Purity Semiconducting Carbon Nanotube Extraction.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101377

By:

Srimani, Tathagata;
Ding, Jianfu;
Yu, Andrew;
Kanhaiya, Pritpal;
Lau, Christian;
Ho, Rebecca;
Humes, Jefford;
Kingston, Christopher T.;
Malenfant, Patrick R.L.;
Shulaker, Max M.

Publication type:

Article

Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000074

By:

Chandrasekar, Hareesh;
Razzak, Towhidur;
Wang, Caiyu;
Reyes, Zeltzin;
Majumdar, Kausik;
Rajan, Siddharth

Publication type:

Article

Transconductance Amplification in Dirac‐Source Field‐Effect Transistors Enabled by Graphene/Nanotube Hereojunctions.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901289

By:

Xu, Lin;
Qiu, Chenguang;
Peng, Lian‐Mao;
Zhang, Zhiyong

Publication type:

Article

Inkjet‐Printed Indium Oxide/Carbon Nanotube Heterojunctions for Gate‐Tunable Diodes.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 1, p. N.PAG, doi. 10.1002/aelm.201901068

By:

Kim, Bongjun

Publication type:

Article

Low‐Voltage Operation of Ring Oscillators Based on Room‐Temperature‐Deposited Amorphous Zinc‐Tin‐Oxide Channel MESFETs.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900548

By:

Lahr, Oliver;
Vogt, Sofie;
Wenckstern, Holger;
Grundmann, Marius

Publication type:

Article

A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO3‐Based Memory Cell.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 7, p. 1, doi. 10.1002/aelm.201800062

By:

Funck, Carsten;
Marchewka, Astrid;
Bäumer, Christoph;
Schmidt, Peter C.;
Müller, Phillip;
Dittmann, Regina;
Martin, Manfred;
Waser, Rainer;
Menzel, Stephan

Publication type:

Article

A comparative study on the self-heating effect of ion-implanted MESFETs.

Published in:

International Journal of Electronics Letters, 2021, v. 9, n. 4, p. 424, doi. 10.1080/21681724.2020.1789757

By:

Dutta, Sutanu;
Bag, Rabisankar

Publication type:

Article

In-Ga-Zn-O MESFET with transparent amorphous Ru-Si-O Schottky barrier.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 7, p. 625, doi. 10.1002/pssr.201409124

By:

Kaczmarski, Jakub;
Grochowski, Jakub;
Kaminska, Eliana;
Taube, Andrzej;
Jung, Wojciech;
Piotrowska, Anna

Publication type:

Article

One decade of fully transparent oxide thin-film transistors: fabrication, performance and stability.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 9, p. 605, doi. 10.1002/pssr.201307259

By:

Frenzel, Heiko;
Lajn, Alexander;
Grundmann, Marius

Publication type:

Article

Design and Analysis of Nanoscaled Recessed-S/D SOI MOSFET-Based Pseudo-NMOS Inverter for Low-Power Electronics.

Published in:

Journal of Nanotechnology, 2019, p. 1, doi. 10.1155/2019/4935073

By:

Priya, Anjali;
Srivastava, Nilesh Anand;
Mishra, Ram Awadh

Publication type:

Article

A novel proposal for all-optical XOR/XNOR gate using a nonlinear photonic crystal based ring resonator.

Published in:

Optica Applicata, 2019, v. 49, n. 2, p. 283, doi. 10.5277/oa190209

By:

ASGHARI, MEHRNOUSH;
MOLOUDIAN, GHOLAMHOSEIN;
HASSANGHOLIZADEH-KASHTIBAN, MAHDI

Publication type:

Article

A new drain insulation design in GaAs SD-MAGFET.

Published in:

Materials Science (0137-1339), 2008, v. 26, n. 1, p. 27

By:

Boratyński, B.;
Kordalski, W.;
Ściana, B.;
Panek, M.;
Zborowska-Lindert, I.

Publication type:

Article

Testing of Quasi-Ballistic Field-Effect Transistors with Schottky Gate by 1/ f Noise Measurements.

Published in:

Radiophysics & Quantum Electronics, 2005, v. 48, n. 3, p. 240, doi. 10.1007/s11141-005-0064-z

By:

Belyakov, A.;
Moryashin, A.;
Perov, M.;
Yakimov, A.;
Vandamme, L.

Publication type:

Article

A novel Field Effect Photodiode to control the output photocurrent and fast optical switching.

Published in:

Optical & Quantum Electronics, 2022, v. 54, n. 3, p. 1, doi. 10.1007/s11082-022-03573-3

By:

Sharafi, Foad;
Orouji, Ali A.;
Soroosh, Mohammad

Publication type:

Article

Condition number for reliable microwave transistor modeling.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2004, v. 14, n. 2, p. 174, doi. 10.1002/mmce.10128

By:

Choubani, Fethi;
Béjaoui, Wahid;
Bouallegue, Ammar

Publication type:

Article

Modeling power and intermodulation behavior of microwave transistors with unified small-signal/large-signal neural network models.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2003, v. 13, n. 4, p. 276, doi. 10.1002/mmce.10091

By:

Giannini, F.;
Leuzzi, G.;
Orengo, G.;
Colantonio, P.

Publication type:

Article

Novel technique for estimating metal semiconductor field effect transitor parasitics.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2003, v. 13, n. 1, p. 62, doi. 10.1002/mmce.10063

By:

Khalaf, Yaser A.;
Riad, Sedki M.

Publication type:

Article

10W CW broadband balanced limiter/LNA fabricated using MSAG MESFET process.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2003, v. 13, n. 2, p. 118, doi. 10.1002/mmce.10069

By:

Bahl, Inder J.

Publication type:

Article

Small-signal and large-signal modeling of active devices using CAD-optimized neural networks.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2002, v. 12, n. 1, p. 71, doi. 10.1002/mmce.10007

By:

Giannini, F.;
Leuzzi, G.;
Orengo, G.;
Albertini, M.

Publication type:

Article

Modeling MESFETs and HEMTs intermodulation distortion behavior using a generalized radial basis function network.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 1999, v. 9, n. 3, p. 261

By:

García, J. A.;
Tazón Puente, A.;
Mediavilla Sánchez, A.;
Santamaría, I.;
Lázaro, M.;
Pantaleón, C. J.;
Pedro, J. C.

Publication type:

Article

Investigation of Dosimetric Characteristics of a MOSFET Detector for Clinical Electron Beams.

Published in:

Gazi Medical Journal, 2019, v. 30, n. 1, p. 48, doi. 10.12996/gmj.2019.12

By:

Dinç, Serap Çatlı;
Hançer, Ceren;
Demirci, Temur;
Akmansu, Müge

Publication type:

Article

Effect of Passivation Layers Permittivity on DC and RF Parameters of GaN MESFETs.

Published in:

Indian Journal of Pure & Applied Physics, 2023, v. 61, n. 2, p. 132, doi. 10.56042/ijpap.v61i2.67097

By:

Abdaoui, N.;
Hadjoub, I.;
Doghmanea, A.;
Abida, L.;
Hadjoub, Z.

Publication type:

Article

Physically based model for trapping and self-heating effects in 4H-SiC MESFETs.

Published in:

Applied Physics A: Materials Science & Processing, 2008, v. 91, n. 2, p. 287, doi. 10.1007/s00339-008-4396-3

By:

Hongliang Lu;
Yimen Zhang;
Yuming Zhang;
Yong Che;
Quanjun Cao;
Shaojin Zheng

Publication type:

Article

Temperature accelerated dielectric breakdown of PECVD low- k carbon doped silicon dioxide dielectric thin films.

Published in:

Applied Physics A: Materials Science & Processing, 2005, v. 81, n. 4, p. 767, doi. 10.1007/s00339-004-2715-x

By:

Zhou, H.;
Shi, F. G.;
Zhao, B.;
Yota, J.

Publication type:

Article

Influence of the metallic contact surface area on the low-frequency noises of metal-semiconductor contacts.

Published in:

Armenian Journal of Physics, 2015, v. 8, n. 1, p. 30

By:

KHONDKARYAN, H. D.

Publication type:

Article

Improved Parameter Extraction Technique for Small Signal MESFET/HEMTs Model.

Published in:

IUP Journal of Science & Technology, 2011, v. 7, n. 4, p. 7

By:

Sharma, Prachi;
Abbasi, Tanveer Ahmad;
Kumar, Ashish;
Singh, Kulwant

Publication type:

Article

Phase-Resolved Measurement of Atmospheric-Pressure Radio-Frequency Pulsed Discharges in Ar/CH4/CO2 Mixture.

Published in:

Plasma Chemistry & Plasma Processing, 2020, v. 40, n. 4, p. 937, doi. 10.1007/s11090-020-10071-5

By:

Liu, Zehui;
Huang, Bangdou;
Zhu, Wenchao;
Zhang, Cheng;
Tu, Xin;
Shao, Tao

Publication type:

Article

Plasticized P(VDF‐TrFE): A new flexible piezoelectric material with an easier polarization process, promising for biomedical applications.

Published in:

Journal of Applied Polymer Science, 2021, v. 138, n. 20, p. 1, doi. 10.1002/app.50420

By:

Thevenot, Camille;
Rouxel, Didier;
Sukumaran, Sunija;
Rouabah, Sawsen;
Vincent, Brice;
Chatbouri, Samir;
Ben Zineb, Tarak

Publication type:

Article

DC and RF Characteristics of SiC MESFETs with Different Channel Doping Concentrations Under the Gate.

Published in:

International Review of Physics, 2011, v. 5, n. 3, p. 116

By:

Razavi, S. M.;
Orouji, Ali A.;
Hosseini, Seyed Ebrahim;
Moghadam, Hamid Amini

Publication type:

Article

Comparison between Mobility Laws on (I-V) Characteristics of GaAs MESFET.

Published in:

International Review of Physics, 2008, v. 2, n. 5, p. 302

By:

Beihour, S.;
Azizi, C.

Publication type:

Article

Improvement in Electrical and 2DEG Properties of Al0.26Ga0.74N|GaN|Si HEMTs.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 379, doi. 10.1134/S1063782621030076

By:

Jabli, F.;
Dhouibi, S.;
Gassoumi, M.

Publication type:

Article

Analytical Drain Current Modeling and Simulation of Triple Material Gate-All-Around Heterojunction TFETs Considering Depletion Regions.

Published in:

Semiconductors, 2020, v. 54, n. 12, p. 1634, doi. 10.1134/S1063782620120398

By:

Usha, C.;
Vimala, P.

Publication type:

Article

Investigation of Pd|HfO2|AlGaN|GaN Enhancement-Mode High Electron Mobility Transistor with Sensitization, Activation, and Electroless-Plating Approaches.

Published in:

Semiconductors, 2020, v. 54, n. 7, p. 803, doi. 10.1134/S1063782620070076

By:

Lin, Y.-C.;
Niu, J.-S.;
Liu, W.-C.;
Tsai, J.-H.

Publication type:

Article

Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode.

Published in:

Semiconductors, 2020, v. 54, n. 1, p. 144, doi. 10.1134/S1063782620010108

By:

Il'inskaya, N. D.;
Lebedeva, N. M.;
Zadiranov, Yu. M.;
Ivanov, P. A.;
Samsonova, T. P.;
Kon'kov, O. I.;
Potapov, A. S.

Publication type:

Article

Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction.

Published in:

Semiconductors, 2019, v. 53, n. 10, p. 1279, doi. 10.1134/S1063782619100245

By:

Vostokov, N. V.;
Daniltsev, V. M.;
Kraev, S. A.;
Krukov, V. L.;
Skorokhodov, E. V.;
Strelchenko, S. S.;
Shashkin, V. I.

Publication type:

Article

Determination of parameters of a nonlinear model of GaAs high-power MESFET field transistors.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1658, doi. 10.1134/S1063782610130087

By:

Bakhvalova, S.

Publication type:

Article

Effect of annealing on the effective barrier height and ideality factor of nickel Schottky contacts to 4 H-SiC.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 612, doi. 10.1134/S1063782609050145

By:

Potapov, A. S.;
Ivanov, P. A.;
Samsonova, T. P.

Publication type:

Article

Structure and properties of Cd xHg1− xTe-metal contacts.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 608, doi. 10.1134/S1063782609050133

By:

Stafeev, V. I.

Publication type:

Article

Transmission of hot electrons through a metal-semiconductor interface.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 42, doi. 10.1134/S1063782609010096

By:

Kharlamov, F. V.;
Kharlamov, V. F.

Publication type:

Article