Works matching DE "METAL semiconductor field-effect transistors"
Results: 348
Non-Destructive Wafer Recycling for Low-Cost Thin-Film Flexible Optoelectronics.
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- Advanced Functional Materials, 2014, v. 24, n. 27, p. 4284, doi. 10.1002/adfm.201400453
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- Article
CHARACTERIZATIONS OF LOW-FREQUENCY NOISE IN LASER-DEBONDED HVPE-GROWN GaN THIN FILMS.
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- Fluctuation & Noise Letters, 2004, v. 4, n. 3, p. L437, doi. 10.1142/S0219477504002026
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- Article
Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 7, p. 869, doi. 10.1049/pel2.12700
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A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss.
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- IET Power Electronics (Wiley-Blackwell), 2021, v. 14, n. 11, p. 2021, doi. 10.1049/pel2.12169
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Enhanced Electrical Performance of Van der Waals Heterostructure.
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- Advanced Materials Interfaces, 2021, v. 8, n. 6, p. 1, doi. 10.1002/admi.202001850
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- Article
Influence of Tunable Work Function on SOI-based DMG Multi-channel Junctionless Thin Film Transistor.
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- Journal of Nano- & Electronic Physics, 2021, v. 13, n. 1, p. 01005-1, doi. 10.21272/jnep.13(1).01005
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Impact of the High-K Dielectric Material as Spacer on Analog and RF Performance of the GS-DG-FinFET.
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- Journal of Nano- & Electronic Physics, 2019, v. 11, n. 6, p. 1, doi. 10.21272/jnep.11(6).06028
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Design and Analysis of Nanoscaled Recessed-S/D SOI MOSFET-Based Pseudo-NMOS Inverter for Low-Power Electronics.
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- Journal of Nanotechnology, 2019, p. 1, doi. 10.1155/2019/4935073
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DENSITY OF SURFACE STATES IN Pd/SiGe/Si INTERFACE FROM CAPACITANCE MEASUREMENTS.
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- Surface Review & Letters, 2007, v. 14, n. 4, p. 765, doi. 10.1142/S0218625X07010226
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Performance Investigations of Novel Hybrid Junctionless Double Gate Transistor with Gate Engineering.
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- Journal of Active & Passive Electronic Devices, 2024, v. 17, n. 4, p. 329
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- Article
Characterization of Enhancement-Depletion Mode AlInN/GaN HEMTs Using Partial p-type GaN Gate.
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- Journal of Active & Passive Electronic Devices, 2019, v. 14, n. 2/3, p. 215
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Simulation of GaAs MESFET Characteristics.
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- Journal of Active & Passive Electronic Devices, 2009, v. 4, n. 1/2, p. 159
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NEW NANOSECOND SWITCH TECHNOLOGY.
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- Microwave Journal, 2010, v. 53, n. 6, p. 56
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BANDWIDTH IMPROVEMENT OF A SINGLE-STAGE DISTRIBUTED AMPLIFIER.
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- Microwave Journal, 2010, v. 53, n. 5, p. 112
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- Article
THE IMPORTANCE OF SWEEP RATE IN DC IV MEASUREMENTS.
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- Microwave Journal, 2005, v. 48, n. 3, p. 130
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- Article
A NEW LARGE-SIGNAL MODEL FOR A PULSE-DOPED GAAS MESFET.
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- Microwave Journal, 2004, v. 47, n. 4, p. 102
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DEPENDENCY OF IV CHARACTERISTICS OF A MESFET DEVICE ON FREQUENCY AND ELECTRIC FIELD.
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- Microwave Journal, 2003, v. 46, n. 11, p. 72
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- Article
DESIGN OF A GENERIC 2.5 W, 60 PERCENT BANDWIDTH, C-BAND MMIC AMPLIFIER.
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- Microwave Journal, 2002, v. 45, n. 8, p. 54
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- Article
Testing of Quasi-Ballistic Field-Effect Transistors with Schottky Gate by 1/ f Noise Measurements.
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- Radiophysics & Quantum Electronics, 2005, v. 48, n. 3, p. 240, doi. 10.1007/s11141-005-0064-z
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- Article
Photosynthetic reaction center/graphene bio-hybrid for low-power optoelectronics.
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- Photosynthetica, 2023, v. 61, p. 465, doi. 10.32615/ps.2023.041
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- Article
Effect of Fe<sub>2</sub>O<sub>3</sub> doping on the electrical properties of a SnO<sub>2</sub> based varistor.
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- Journal of Materials Science, 2002, v. 37, n. 12, p. 2407, doi. 10.1023/A:1015458700086
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- Article
Mathematical analysis of temperature distribution uniformity of banana dried by vacuum radio frequency treatment.
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- Drying Technology, 2020, v. 38, n. 15, p. 2027, doi. 10.1080/07373937.2019.1611595
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- Article
A COMPARATIVE STUDY OF HETERO STRUCTURE DEVICES FOR ELECTRONIC APPLICATIONS.
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- i-Manager's Journal on Electronics Engineering, 2018, v. 8, n. 4, p. 1, doi. 10.26634/jele.8.4.14196
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- Article
Repercussions Through Inclusion of Multi Bridge Channels into Gate All Around Nano-Wire Field Effect Transistor.
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- Journal of Nano- & Electronic Physics, 2023, v. 15, n. 5, p. 05019-1, doi. 10.21272/jnep.15(5).05019
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- Article
The Design of the Traveling-Wave Dual-Gate MESFET.
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- Electromagnetics, 2006, v. 26, n. 7, p. 571, doi. 10.1080/02726340600873029
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- Article
Plasticized P(VDF‐TrFE): A new flexible piezoelectric material with an easier polarization process, promising for biomedical applications.
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- Journal of Applied Polymer Science, 2021, v. 138, n. 20, p. 1, doi. 10.1002/app.50420
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- Article
Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-474
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- Article
A new drain insulation design in GaAs SD-MAGFET.
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- Materials Science (0137-1339), 2008, v. 26, n. 1, p. 27
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K-Band Highly Linear Power Amplifier with Superior Temperature Stability in 90 nm Trap-Rich SOI-CMOS.
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- Microwave Journal, 2021, v. 64, n. 9, p. 86
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- Article
Annealing Studies on Zinc Oxide Thin Films Deposited by Magnetron Sputtering.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 764, doi. 10.1007/s11664-007-0357-4
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- Article
Electrical Characterization of Defects Introduced During Sputter Deposition of Schottky Contacts on n-type Ge.
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- Journal of Electronic Materials, 2007, v. 36, n. 12, p. 1604, doi. 10.1007/s11664-007-0245-y
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- Article
Influence of Si<sub>3</sub>N<sub>4</sub> Passivation on Surface Trapping in SiC Metal-Semiconductor Field-Effect Transistors.
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- Journal of Electronic Materials, 2004, v. 33, n. 8, p. 908, doi. 10.1007/s11664-004-0219-2
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High-Quality Schottky and Ohmic Contacts in Planar 4H-SiC Metal Semiconductor Field-Effect Transistors and Device Performance.
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- Journal of Electronic Materials, 2004, v. 33, n. 2, p. 89, doi. 10.1007/s11664-004-0275-7
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- Article
A novel Field Effect Photodiode to control the output photocurrent and fast optical switching.
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- Optical & Quantum Electronics, 2022, v. 54, n. 3, p. 1, doi. 10.1007/s11082-022-03573-3
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- Article
Buffer-trapping effects on current slump in AlGaN/GaN HEMTs.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 735, doi. 10.1007/s10854-007-9399-x
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Effect of Passivation Layers Permittivity on DC and RF Parameters of GaN MESFETs.
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- Indian Journal of Pure & Applied Physics, 2023, v. 61, n. 2, p. 132, doi. 10.56042/ijpap.v61i2.67097
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Strategy to improve synaptic behavior of ion-actuated synaptic transistors—the use of ion blocking layer to improve state retention.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-55681-7
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Editorial for the Special Issue on SiC Based Miniaturized Devices.
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- 2020
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- Editorial
Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study.
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- Micromachines, 2020, v. 11, n. 1, p. 53, doi. 10.3390/mi11010053
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- Article
Improved DRUS 4H-SiC MESFET with High Power Added Efficiency.
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- Micromachines, 2020, v. 11, n. 1, p. 35, doi. 10.3390/mi11010035
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- Article
An Improved 4H-SiC MESFET with a Partially Low Doped Channel.
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- Micromachines, 2019, v. 10, n. 9, p. 555, doi. 10.3390/mi10090555
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- Article
Improved MRD 4H-SiC MESFET with High Power Added Efficiency.
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- Micromachines, 2019, v. 10, n. 7, p. 479, doi. 10.3390/mi10070479
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- Article
Editorial for the Special Issue on Wide Bandgap Semiconductor Based Micro/Nano Devices.
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- 2019
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- Editorial
An Improved UU-MESFET with High Power Added Efficiency.
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- Micromachines, 2018, v. 9, n. 11, p. 573, doi. 10.3390/mi9110573
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- Article
Simulation and Analysis of Si Schottky Diode Family in DC-DC Converter.
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- International Journal on Electrical Engineering & Informatics, 2009, v. 1, n. 2, p. 137
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- Article
BIAS-TUNABLE ELECTRON-SPIN POLARIZATION IN HYBRID FERROMAGNETIC-SCHOTTKY-STRIPE AND SEMICONDUCTOR NANOSTRUCTURE.
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- Modern Physics Letters B, 2010, v. 24, n. 11, p. 1069, doi. 10.1142/S0217984910023116
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- Article
DISCRETIZATION METHOD OF HYDRODYNAMIC EQUATIONS FOR SIMULATION OF GaN MESFETs.
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- Modern Physics Letters B, 2008, v. 22, n. 16, p. 1599, doi. 10.1142/S0217984908016339
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A novel approach of developing all-optical frequency encoded dibit-based Peres gate using reflective semiconductor optical amplifier.
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- Journal of Nonlinear Optical Physics & Materials, 2023, v. 32, n. 3, p. 1, doi. 10.1142/S0218863523500224
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Performance Perspective of Gate-All-Around Double Nanosheet CMOS Beyond High-Speed Logic Applications.
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- Journal of Integrated Circuits & Systems, 2022, v. 17, n. 2, p. 1, doi. 10.29292/jics.v17i2.617
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Substrate Effect Evaluation by the Analysis of Intrinsic Capacitances in SOI UTBB Transistors.
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- Journal of Integrated Circuits & Systems, 2020, v. 15, n. 1, p. 1, doi. 10.29292/jics.v15i1.118
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- Article