Works matching DE "METAL semiconductor field-effect transistors"

Results: 357

Non-Destructive Wafer Recycling for Low-Cost Thin-Film Flexible Optoelectronics.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 27, p. 4284, doi. 10.1002/adfm.201400453

By:

Lee, Kyusang;
Zimmerman, Jeramy D.;
Hughes, Tyler W.;
Forrest, Stephen R.

Publication type:

Article

Buffer-trapping effects on current slump in AlGaN/GaN HEMTs.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 735, doi. 10.1007/s10854-007-9399-x

By:

Nakajima, Atsushi;
Horio, Kazushige

Publication type:

Article

АНАЛІЗ РОБОТИ ДВОКОНТУРНОГО АВТОГЕНЕРАТОРНОГО ВИХРОСТРУМОВОГО ДЕФЕКТОСКОПА В РЕЖИМІ ПЕРЕРИВЧАСТОЇ ГЕНЕРАЦІЇ

Published in:

Technical Diagnostics & Nondestructive Testing / Tekhnicheskaya Diagnostika I Nerazrushayushchiy Kontrol, 2022, n. 2, p. 24, doi. 10.37434/tdnk2022.02.04

By:

Учанін, В. М.

Publication type:

Article

A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 4, p. 729, doi. 10.3390/electronics13040729

By:

Wang, Haochen;
Chen, Kuangli;
Yang, Ning;
Zhu, Jianggen;
Duan, Enchuan;
Huang, Shuting;
Zhao, Yishang;
Zhang, Bo;
Zhou, Qi

Publication type:

Article

New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 14, p. 3044, doi. 10.3390/electronics12143044

By:

Chakraborty, Surajit;
Amir, Walid;
Kwon, Hyuk-Min;
Kim, Tae-Woo

Publication type:

Article

A Novel Ring-Gate AlGaN/GaN HEMT Device and Electrode Structure Optimization.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 20, p. 3329, doi. 10.3390/electronics11203329

By:

Zhu, Yanxu;
Song, Xiaomeng;
Li, Jianwei;
Li, Jinheng;
Fei, Baoliang;
Li, Peiyang;
Li, Fajun

Publication type:

Article

Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 11, p. 1669, doi. 10.3390/electronics11111669

By:

Jia, Lining;
Lin, Qian;
Wu, Haifeng;
Wang, Xiaozheng

Publication type:

Article

Equivalent Circuit Modeling of a Dual-Gate Graphene FET.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 1, p. 63, doi. 10.3390/electronics10010063

By:

Hasan, Saima;
Kouzani, Abbas Z.;
Mahmud, M A Parvez

Publication type:

Article

Controllable Schottky Barriers between MoS2 and Permalloy.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep06928

By:

Weiyi Wang;
Yanwen Liu;
Lei Tang;
Yibo Jin;
Tongtong Zhao;
Faxian Xiu

Publication type:

Article

Frequency-Controls of Electromagnetic Multi-Beam Scanning by Metasurfaces.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep06921

By:

Yun Bo Li;
Xiang Wan;
Ben Geng Cai;
Qiang Cheng;
Tie Jun Cui

Publication type:

Article

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep05951

By:

He Tian;
Zhen Tan;
Can Wu;
Xiaomu Wang;
Mohammad, Mohammad Ali;
Dan Xie;
Yi Yang;
Jing Wang;
Lain-Jong Li;
Jun Xu;
Tian-Ling Ren

Publication type:

Article

Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep03826

By:

Wenjing Zhang;
Chih-Piao Chuu;
Jing-Kai Huang;
Chang-Hsiao Chen;
Meng-Lin Tsai;
Yung-Huang Chang;
Chi-Te Liang;
Yu-Ze Chen;
Yu-Lun Chueh;
Jr-Hau He;
Mei-Yin Chou;
Lain-Jong Li

Publication type:

Article

Inoculation of silicon nanoparticles with silver atoms.

Published in:

Scientific Reports, 2013, p. 1, doi. 10.1038/srep03083

By:

Cathal Cassidy;
Vidyadhar Singh;
Panagiotis Grammatikopoulos;
Djurabekova, Flyura;
Nordlund, Kai;
Mukhles Sowwan

Publication type:

Article

A COMPARATIVE STUDY OF HETERO STRUCTURE DEVICES FOR ELECTRONIC APPLICATIONS.

Published in:

i-Manager's Journal on Electronics Engineering, 2018, v. 8, n. 4, p. 1, doi. 10.26634/jele.8.4.14196

By:

MARANI, ROBERTO;
PERRI, ANNA GINA

Publication type:

Article

Repercussions Through Inclusion of Multi Bridge Channels into Gate All Around Nano-Wire Field Effect Transistor.

Published in:

Journal of Nano- & Electronic Physics, 2023, v. 15, n. 5, p. 05019-1, doi. 10.21272/jnep.15(5).05019

By:

Kumar, S. Ashok;
Soundararajan, J.;
Peruman, P. Mahendra;
Susmitha, J.;
Krishnaprasath, K.

Publication type:

Article

Influence of Tunable Work Function on SOI-based DMG Multi-channel Junctionless Thin Film Transistor.

Published in:

Journal of Nano- & Electronic Physics, 2021, v. 13, n. 1, p. 01005-1, doi. 10.21272/jnep.13(1).01005

By:

Ashok Kumar, S.;
Pravin, J. Charles

Publication type:

Article

Impact of the High-K Dielectric Material as Spacer on Analog and RF Performance of the GS-DG-FinFET.

Published in:

Journal of Nano- & Electronic Physics, 2019, v. 11, n. 6, p. 1, doi. 10.21272/jnep.11(6).06028

By:

Pattnaik, A.;
Singh, Sruti S.;
Mohapatra, S. K.

Publication type:

Article

Fabrication of AgGaTe2 Solar Cells Using GaTe Powder to Suppress Mo–Te Compounds Formation near the Electrode Layer.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202300548

By:

Park, Gunwook;
Kobayashi, Masakazu

Publication type:

Article

Study on the Point‐Contact Gate AlGaN/GaN High Electron Mobility Transistor with 0.1 μm Gate Length.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 14, p. 1, doi. 10.1002/pssa.202300185

By:

Luo, Shengting;
Liu, Xianyun;
Jiang, Xingfang

Publication type:

Article

20.2 GHz‐µm fT–LG in InAlN/GaN‐on‐Si High Electron Mobility Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 21, p. 1, doi. 10.1002/pssa.202100858

By:

Charan, Vanjari Sai;
Muralidharan, Rangarajan;
Raghavan, Srinivasan;
Nath, Digbijoy N.

Publication type:

Article

Photocatalysis: Constructing a Metallic/Semiconducting TaB2/Ta2O5 Core/Shell Heterostructure for Photocatalytic Hydrogen Evolution (Adv. Energy Mater. 12/2014).

Published in:

Advanced Energy Materials, 2014, v. 4, n. 12, p. n/a, doi. 10.1002/aenm.201470061

By:

Yang, Yongqiang;
Sun, Chenghua;
Wang, Lianzhou;
Liu, Zhibo;
Liu, Gang;
Ma, Xiuliang;
Cheng, Hui‐Ming

Publication type:

Article

The Design of the Traveling-Wave Dual-Gate MESFET.

Published in:

Electromagnetics, 2006, v. 26, n. 7, p. 571, doi. 10.1080/02726340600873029

By:

Kaddour, M.;
Gharbi, A.;
Baudrand, H.

Publication type:

Article

An Approach for Determining an Equivalent Circuit Model for Traveling-Wave MESFET Design.

Published in:

Electromagnetics, 2004, v. 24, n. 3, p. 167, doi. 10.1080/02726340490422852

By:

Kaddour, M.;
Gharsallah, A.;
Gharbi, A.;
Baudrand, H.

Publication type:

Article

Design and Analysis of Nanoscaled Recessed-S/D SOI MOSFET-Based Pseudo-NMOS Inverter for Low-Power Electronics.

Published in:

Journal of Nanotechnology, 2019, p. 1, doi. 10.1155/2019/4935073

By:

Priya, Anjali;
Srivastava, Nilesh Anand;
Mishra, Ram Awadh

Publication type:

Article

Performance enhancement of field effect transistor without doping junctions using In0.3Ga0.7As/GaAs for analog/RF applications.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2019, v. 33, n. 7, p. N.PAG, doi. 10.1142/S0217979219500504

By:

Fallahnejad, Mohammad;
Vadizadeh, Mahdi;
Salehi, Alireza

Publication type:

Article

4H-SIC VERTICAL RESURF SCHOTTKY RECTIFIERS AND MOSFETS.

Published in:

International Journal of High Speed Electronics & Systems, 2007, v. 17, n. 1, p. 55, doi. 10.1142/S0129156407004242

By:

Wang, Y.;
Losee, P. A.;
Chow, T. P.

Publication type:

Article

SILICON-BASED INTEGRATED MOSFETS AND MESFETS: A NEW PARADIGM FOR LOW POWER, MIXED SIGNAL, MONOLITHIC SYSTEMS USING COMMERCIALLY AVAILABLE SOI.

Published in:

International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 2, p. 723, doi. 10.1142/S0129156406003977

By:

Jinman Yang;
Balijepalli, Asha;
Thornton, Trevor J.

Publication type:

Article

ANALYTICAL MODEL FOR NON-SELF ALIGNED BURIED P-LAYER SiC MESFET.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 273, doi. 10.1142/S0129156404003010

By:

Gupta, R. S.;
Aggarwal, Sandeep Kumar;
Gupta, Ritesh;
Gupta, Mridula;
Haldar, Subhasis

Publication type:

Article

EFFECTS OF BUFFER LAYER THICKNESS AND DOPING CONCENTRATION ON SiC MESFET CHARACTERISTICS.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 266, doi. 10.1142/S0129156404003009

By:

Mukherjee, Sankha S.;
Islam, Syed S.

Publication type:

Article

SIMULATION STUDY ON BREAKDOWN BEHAVIOR OF FIELD- PLATE SiC MESFETs.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 260, doi. 10.1142/S0129156404002995

By:

Cha, Ho-Young;
Choi, Y. C.;
Eastman, Lester F.;
Spencer, Michael G.

Publication type:

Article

PHOTOCAPACITANCE OF GaAs THIN-FILM STRUCTURES FABRICATED ON A SEMI-INSULATING COMPENSATED SUBSTRATE.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 151, doi. 10.1142/S012915640400282X

By:

Gorev, Nikolai B.;
Kodzhespirova, Inna F.;
Privalov, Evgeny N.;
Khuchua, Nina;
Khvedelidze, Levan;
Shur, Michael S.

Publication type:

Article

The Transition Layer in TiB[sub 2]–GaAs and Au–TiB[sub 2]–GaAs Schottky Contacts.

Published in:

Semiconductors, 2001, v. 35, n. 4, p. 427, doi. 10.1134/1.1365188

By:

Venger, E. F.;
Konakova, R. V.;
Okhrimenko, O. B.;
Sapko, S. Yu.;
Shekhovtsov, L. V.;
Ivanov, V. N.

Publication type:

Article

Consideration of the “Island” Background Charge in Single-Electron Transistor Simulation.

Published in:

Semiconductors, 2001, v. 35, n. 4, p. 474, doi. 10.1134/1.1365198

By:

Abramov, I. I.;
Novik, E. G.

Publication type:

Article

Investigating the Impact of Fe-Doped GaN and β-Ga2O3 Buffer Layers on a Laterally Scaled AlN/GaN HEMT Using Silicon Carbide Substrate for Next-Generation RF Electronics.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 2355, doi. 10.1007/s11664-024-11672-y

By:

Devi, K. Nirmala;
Hariprasad, S.;
Natarajan, Ramkumar;
Chinnaswamy, Sivamani;
Ravi, S.

Publication type:

Article

Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 9, p. 5555, doi. 10.1007/s11664-024-11289-1

By:

Lino, L.;
Saravana Kumar, R.;
Mohanbabu, A.;
Murugapandiyan, P.

Publication type:

Article

SiC Material in Si-LDMOS Transistors by Controlling Mismatching at Their Interfaces.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 9, p. 4896, doi. 10.1007/s11664-022-09696-3

By:

Mehrad, Mahsa;
Zareiee, Meysam

Publication type:

Article

Improved 4H-SiC Metal–Semiconductor Field-Effect Transistors with Double-Symmetric-Step Buried Oxide Layer for High-Energy-Efficiency Applications.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 8, p. 4348, doi. 10.1007/s11664-022-09667-8

By:

Zhu, Shunwei;
Jia, Hujun;
Dong, Mengyu;
Wang, Xiaowei;
Yang, Yintang

Publication type:

Article

High-temperature device performance and thermal characteristics of GaAs MESFETs on CVD diamond substrates.

Published in:

Quality & Reliability Engineering International, 2000, v. 16, n. 6, p. 527, doi. 10.1002/1099-1638(200011/12)16:6<527::AID-QRE360>3.0.CO;2-0

By:

Zhu, L. H.;
Christou, A.;
Barbe, D. F.

Publication type:

Article

LOW FREQUENCY NOISE ANALYSIS TO DETECT THE INFLUENCE OF DEEP LEVELS IN AlGaAs/GaAs HEMTs.

Published in:

Quality & Reliability Engineering International, 1992, v. 8, n. 3, p. 301, doi. 10.1002/qre.4680080321

By:

Labat, N.;
Bodi, D. Ouro;
Touboul, A.;
Danto, Y.

Publication type:

Article

DEGRADATION MECHANISMS IN 2 W MESFETs.

Published in:

Quality & Reliability Engineering International, 1991, v. 7, n. 4, p. 343, doi. 10.1002/qre.4680070422

By:

Canali, C.;
Magistrali, F.;
Paccagnella, A.;
Sangalli, M.;
Tedesco, C.;
Zanoni, E.

Publication type:

Article

DEGRADATION OF ION IMPLANTED GaAs MESFETs.

Published in:

Quality & Reliability Engineering International, 1991, v. 7, n. 4, p. 339, doi. 10.1002/qre.4680070421

By:

Goostray, J.;
Thomas, H.;
Morgan, D. V.;
Conlon, R.;
Dumas, J. M.;
Gauneau, G. M.

Publication type:

Article

RELIABILITY AND FAILURE ANALYSIS OF GaAs MESFETs ON GaAs AND Si SUBSTRATES.

Published in:

Quality & Reliability Engineering International, 1991, v. 7, n. 4, p. 323, doi. 10.1002/qre.4680070419

By:

Kornilios, N.;
Tsagaraki, K.;
Stoemenos, J.;
Christou, A.

Publication type:

Article

New Component Derating Study.

Published in:: Quality & Reliability Engineering International, 1991, v. 7, n. 3, p. 192
Publication type:: Article

Photo Organic Field Effect Transistor's Properties.

Published in:

Turkish Journal of Physics, 2008, v. 32, n. 1, p. 13

By:

Karimov, Khasan S.;
Qazi, Ibrahim;
Tahir, M. Mahroof;
Khan, Tauseef Ahmed;
Shafique, Umar

Publication type:

Article

InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics.

Published in:

Technical Physics Letters, 2019, v. 45, n. 11, p. 1092, doi. 10.1134/S1063785019110075

By:

Maleev, N. A.;
Vasil'ev, A. P.;
Kuzmenkov, A. G.;
Bobrov, M. A.;
Kulagina, M. M.;
Troshkov, S. I.;
Maleev, S. N.;
Belyakov, V. A.;
Petryakova, E. V.;
Kudryashova, Yu. P.;
Fefelova, E. L.;
Makartsev, I. V.;
Blokhin, S. A.;
Ahmedov, F. A.;
Egorov, A. V.;
Fefelov, A. G.;
Ustinov, V. M.

Publication type:

Article

Analyzing Transfer Characteristics of Disordered Polymer Field-Effect Transistors for Intrinsic Device Parameter Extraction.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 7, p. 1075, doi. 10.3390/cryst13071075

By:

Yoon, Minho

Publication type:

Article

Tuning the electron transport behavior at Li/LATP interface for enhanced cyclability of solid-state Li batteries.

Published in:

Nano Research, 2023, v. 16, n. 1, p. 1634, doi. 10.1007/s12274-022-5136-2

By:

Luo, Linshan;
Zheng, Feng;
Gao, Haowen;
Lan, Chaofei;
Sun, Zhefei;
Huang, Wei;
Han, Xiang;
Zhang, Ziqi;
Su, Pengfei;
Wang, Peng;
Guo, Shengshi;
Lin, Guangyang;
Xu, Jianfang;
Wang, Jianyuan;
Li, Jun;
Li, Cheng;
Zhang, Qiaobao;
Wu, Shunqing;
Wang, Ming-Sheng;
Chen, Songyan

Publication type:

Article

Influence of Varying Recessed Gate Height on Analog/RF Performances of a Novel Normally-Off Underlapped Double Gate AlGaN/GaN-based MOS-HEMT.

Published in:

IETE Journal of Research, 2025, v. 71, n. 3, p. 1025, doi. 10.1080/03772063.2024.2443031

By:

Chakraborty, Chirayush;
Kundu, Atanu

Publication type:

Article

DENSITY OF SURFACE STATES IN Pd/SiGe/Si INTERFACE FROM CAPACITANCE MEASUREMENTS.

Published in:

Surface Review & Letters, 2007, v. 14, n. 4, p. 765, doi. 10.1142/S0218625X07010226

By:

SELLAI, A.;
MAMOR, M.;
AL-HARTHI, S.

Publication type:

Article

Enhanced angular current intensity from Schottky emitters.

Published in:

Journal of Microscopy, 2010, v. 239, n. 3, p. 215, doi. 10.1111/j.1365-2818.2010.03371.x

By:

FUJITA, S.;
WELLS, T. R. C.;
USHIO, W.;
SATO, H.;
EL-GOMATI, M. M.

Publication type:

Article