Time Domain Analysis of GaAS MESFET Transistors Excited by an Incident Electromagnetic Field.
- Published in:
- Applied Computational Electromagnetics Society Journal, 2014, v. 29, n. 10, p. 821
- By:
- Publication type:
- Article
Works matching DE "METAL semiconductor field-effect transistor circuits"
Results: 3
1
2
Effect of Mobility on (I-V) Characteristics of Gaas MESFET.
- Published in:
- International Journal of Electrical & Computer Engineering (2088-8708), 2017, v. 7, n. 1, p. 169, doi. 10.11591/ijece.v7i1.pp169-175
- By:
- Publication type:
- Article
3
A COMPARATIVE STUDY OF HETERO STRUCTURE DEVICES FOR ELECTRONIC APPLICATIONS.
- Published in:
- i-Manager's Journal on Circuits & Systems, 2018, v. 6, n. 2, p. 1
- By:
- Publication type:
- Article