Works matching DE "METAL oxide semiconductor field-effect transistors -- Design %26 construction"
Results: 4
Experimental Comparison of High-Speed Gate Driver Design for 1.2-kV/120-A Si IGBT and SiC MOSFET Modules.
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- IET Power Electronics (Wiley-Blackwell), 2017, v. 10, n. 9, p. 979, doi. 10.1049/iet-pel.2016.0668
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- Article
High-κ dielectrics and advanced channel concepts for Si MOSFET.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 10, p. 915, doi. 10.1007/s10854-008-9713-2
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- Article
Design and Implementation of a 5 kVA Inverter.
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- IUP Journal of Electrical & Electronics Engineering, 2016, v. 9, n. 4, p. 32
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- Article
Highly-Efficient and Compact 6 kW/4 × 125 kHz Interleaved DC-DC Boost Converter with SiC Devices and Low-Capacitive Inductors.
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- Energies (19961073), 2017, v. 10, n. 3, p. 363, doi. 10.3390/en10030363
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- Article