Works about METAL oxide semiconductor field-effect transistors
Results: 2483
β-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors with Doped Epitaxial Layer Grown by MOCVD.
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- Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 312, doi. 10.16553/j.cnki.issn1000-985x.2024.0284
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- Article
Research Progress of Ultra-Wide Bandgap β-Ga<sub>2</sub>O<sub>3</sub> Power Devices on Novel Structures and Electro-Thermal Characteristics.
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- Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 263, doi. 10.16553/j.cnki.issn1000-985x.2024.0265
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- Article
A Temperature-Independent Gate-Oxide Degradation Monitoring Method for Silicon Carbide Metal Oxide–Semiconductor Field-Effect Transistors Based on Turn-Off Ringing.
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- Electronics (2079-9292), 2025, v. 14, n. 4, p. 771, doi. 10.3390/electronics14040771
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- Article
Experimental Study of the Comparison of the Synergistic Effect of Total Ionizing Dose and Neutron Single Event on Si/SiC MOSFETs.
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- Electronics (2079-9292), 2025, v. 14, n. 4, p. 763, doi. 10.3390/electronics14040763
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- Article
High-Efficiency, Low-Loss, and Wideband 5.8 GHz Energy Harvester Designed Using TSMC 65 nm Process for IoT Self-Powered Nodes.
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- Energies (19961073), 2025, v. 18, n. 4, p. 862, doi. 10.3390/en18040862
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- Article
Dynamic Performance Evaluation of Bidirectional Bridgeless Interleaved Totem-Pole Power Factor Correction Boost Converter.
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- Micromachines, 2025, v. 16, n. 2, p. 223, doi. 10.3390/mi16020223
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- Article
The Effect of Through-Silicon-Via Thermal Stress on Metal-Oxide-Semiconductor Field-Effect Transistor Properties Under Cooling to Ultra-Low Temperatures.
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- Micromachines, 2025, v. 16, n. 2, p. 221, doi. 10.3390/mi16020221
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- Article
Research on Deflection and Stress Analyses and the Improvement of the Removal Uniformity of Silicon in a Single-Sided Polishing Machine Under Pressure.
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- Micromachines, 2025, v. 16, n. 2, p. 198, doi. 10.3390/mi16020198
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- Article
Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules.
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- Micromachines, 2025, v. 16, n. 2, p. 197, doi. 10.3390/mi16020197
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- Article
A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations.
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- Micromachines, 2025, v. 16, n. 2, p. 188, doi. 10.3390/mi16020188
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- Article
Low-power, high-performance SOI CMOS.
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- Solid State Technology, 2001, v. 44, n. 11, p. 63
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- Article
Low-energy plasma-enhanced CVD facilities high mobility SiGe.
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- Solid State Technology, 2000, v. 43, n. 12, p. 30
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- Article
Gd oxide may bring better GaAs, more talk.
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- Solid State Technology, 1999, v. 42, n. 6, p. 28
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- Article
Double-gate MOSFET demonstrates 25-nm thick channel.
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- Solid State Technology, 1998, v. 41, n. 3, p. 24
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- Article
2D Nanosheets and Their Composite Membranes for Water, Gas, and Ion Separation.
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- Angewandte Chemie, 2019, v. 131, n. 49, p. 17674, doi. 10.1002/ange.201814349
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- Article
Biodegradable Thin Metal Foils and Spin-On Glass Materials for Transient Electronics.
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- Advanced Functional Materials, 2015, v. 25, n. 12, p. 1789, doi. 10.1002/adfm.201403469
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- Article
Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor.
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- Advanced Functional Materials, 2014, v. 24, n. 41, p. 6503, doi. 10.1002/adfm.201401438
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- Article
Dissolvable Metals for Transient Electronics.
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- Advanced Functional Materials, 2014, v. 24, n. 5, p. 645, doi. 10.1002/adfm.201301847
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- Article
Effect of Gate Electrode Work-Function on Source Charge Injection in Electrolyte-Gated Organic Field-Effect Transistors.
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- Advanced Functional Materials, 2014, v. 24, n. 5, p. 695, doi. 10.1002/adfm.201302070
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- Article
Reduction of drain induced barrier lowering by optimization Trimetal- GAA -Si -NW MOSFET in multimedia tools.
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- Multimedia Tools & Applications, 2022, v. 81, n. 14, p. 19849, doi. 10.1007/s11042-021-11518-3
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- Article
Growth and interfacial properties of epitaxial oxides on semiconductors: ab initio insights.
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- Journal of Materials Science, 2012, v. 47, n. 21, p. 7417, doi. 10.1007/s10853-012-6425-z
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- Article
Recent progress in ab initio simulations of hafnia-based gate stacks.
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- Journal of Materials Science, 2012, v. 47, n. 21, p. 7399, doi. 10.1007/s10853-012-6568-y
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- Article
Aberration corrected scanning transmission electron microscopy and electron energy loss spectroscopy studies of epitaxial Fe/MgO/(001)Ge heterostructures.
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- Journal of Materials Science, 2011, v. 46, n. 12, p. 4157, doi. 10.1007/s10853-011-5248-7
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- Article
Polycrystalline fluorine-doped tin oxide as sensoring thin film in EGFET pH sensor.
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- Journal of Materials Science, 2010, v. 45, n. 20, p. 5478, doi. 10.1007/s10853-010-4603-4
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- Article
Properties of Ta-Mo alloy gate electrode forn-MOSFET.
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- 2005
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- Letter
Anisotropic stress observation of 4H‐SiC trench metal‐oxide semiconductor field‐effect transistor test structures by scanning near‐field optical Raman microscope.
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- Journal of Raman Spectroscopy, 2024, v. 55, n. 9, p. 982, doi. 10.1002/jrs.6685
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- Article
On the Fluctuation–Dissipation of the Oxide Trapped Charge in a MOSFET Operated Down to Deep Cryogenic Temperatures.
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- Fluctuation & Noise Letters, 2023, v. 22, n. 6, p. 1, doi. 10.1142/S0219477523500451
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- Article
Performance Improvements of Random Dopant Fluctuation-Induced Variability in Negative Capacitance MOSFETS.
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- Fluctuation & Noise Letters, 2020, v. 19, n. 1, p. N.PAG, doi. 10.1142/S0219477520500029
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- Article
Effects of Hot-Carrier Stress on the RF Performance of a 0.18-μm MOS Divide-by-4 LC Injection-Locked Frequency Divider.
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- Fluctuation & Noise Letters, 2014, v. 13, n. 2, p. -1, doi. 10.1142/S0219477514500096
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- Article
1/f CHANNEL NOISE AT HIGH DRAIN CURRENT IN MOS TRANSISTORS.
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- Fluctuation & Noise Letters, 2011, v. 10, n. 4, p. 431, doi. 10.1142/S0219477511000673
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- Article
COMPARISON OF 1/f NOISE IN JFETs AND MOSFETs WITH SEVERAL FIGURES OF MERIT.
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- Fluctuation & Noise Letters, 2011, v. 10, n. 4, p. 447, doi. 10.1142/S0219477511000685
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- Article
INSTRUMENTATION DESIGN FOR CROSS-CORRELATION MEASUREMENTS BETWEEN GATE AND DRAIN LOW FREQUENCY NOISE IN MOSFETS.
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- Fluctuation & Noise Letters, 2010, v. 9, n. 3, p. 313, doi. 10.1142/S021947751000023X
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- Article
ACCURACY ISSUES OF ON-WAFER MICROWAVE NOISE MEASUREMENTS.
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- Fluctuation & Noise Letters, 2008, v. 8, n. 3/4, p. L281, doi. 10.1142/S0219477508005136
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- Article
MODELING OF NOISE BEHAVIOR OF GRADED BAND GAP CHANNEL MOSFET AT GHz FREQUENCIES.
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- Fluctuation & Noise Letters, 2007, v. 7, n. 4, p. L507, doi. 10.1142/S0219477507004185
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- Article
ON THE ORIGIN OF 1/F NOISE IN MOSFETS.
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- Fluctuation & Noise Letters, 2007, v. 7, n. 3, p. L321, doi. 10.1142/S0219477507003970
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- Article
IMPACT OF GATE POLYSILICON INTERFACE ON CARRIER TRAPPING LOW FREQUENCY NOISE IN ADVANCED MOSFET'S.
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- Fluctuation & Noise Letters, 2006, v. 6, n. 4, p. L427, doi. 10.1142/S0219477506003586
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- Article
GEOMETRY AND BIAS DEPENDENCE OF LOW-FREQUENCY RANDOM TELEGRAPH SIGNAL AND 1/f NOISE LEVELS IN MOSFETS.
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- Fluctuation & Noise Letters, 2005, v. 5, n. 4, p. L539, doi. 10.1142/S0219477505002999
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- Article
ON THE INFLUENCE OF SPACE-QUANTIZATION EFFECTS ON THE RF NOISE BEHAVIOUR OF DG MOSFETS.
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- Fluctuation & Noise Letters, 2004, v. 4, n. 4, p. L561, doi. 10.1142/S0219477504002191
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- Article
A NEW TECHNIQUE FOR EXTRACTING THE MOSFET THRESHOLD VOLTAGE USING NOISE MEASUREMENTS.
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- Fluctuation & Noise Letters, 2004, v. 4, n. 4, p. L643, doi. 10.1142/S0219477504002282
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- Article
1/f<sup>γ</sup> DRAIN CURRENT NOISE MODEL IN ULTRATHIN OXIDE MOSFETS.
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- Fluctuation & Noise Letters, 2004, v. 4, n. 2, p. L297, doi. 10.1142/S0219477504001902
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- Article
LOW FREQUENCY NOISE IN SUB-0.1μmSiGepMOSFETs, CHARACTERISATION AND MODELING.
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- Fluctuation & Noise Letters, 2004, v. 4, n. 2, p. L309, doi. 10.1142/S0219477504001914
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- Article
NOISE ANALYSIS IN A 0.8 V FORWARD BODY-BIAS CMOS OP-AMP DESIGN.
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- Fluctuation & Noise Letters, 2004, v. 4, n. 2, p. L403, doi. 10.1142/S0219477504001975
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- Article
Low-Frequency Noise in AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors.
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- Fluctuation & Noise Letters, 2001, v. 1, n. 4, p. L221, doi. 10.1142/S0219477501000469
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- Article
Low Frequency Noise in CMOS Transistors: An Experimental and Comparative Study on Different Technologies.
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- Fluctuation & Noise Letters, 2001, v. 1, n. 4, p. L233, doi. 10.1142/S0219477501000482
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- Article
Green's Functions Approach to MOS Physics-Based Compact Noise Modelling.
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- Fluctuation & Noise Letters, 2001, v. 1, n. 1, p. R51, doi. 10.1142/S0219477501000123
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- Article
A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03875-9
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- Article
β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs electrical characteristic study of various etching depths grown on sapphire substrate by MOCVD.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03867-9
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- Article
Demonstration of MOCVD-grown Ga<sub>2</sub>O<sub>3</sub> power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS).
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03858-w
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- Article
Recovery of off-state stress-induced damage in FET-type gas sensor using self-curing method.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03801-z
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- Article
Gate driver, snubber and circuit design considerations for fast‐switching series‐connected SiC MOSFETs.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 14, p. 1867, doi. 10.1049/pel2.12744
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- Article