Works matching DE "METAL oxide semiconductor field-effect transistors"

Results: 2573

Enhancement of fMAX/fT in α-Ga2O3 MOSFET with ultra-wide bandgap MgO and CaO blocking layers.

Published in:

Applied Physics A: Materials Science & Processing, 2025, v. 131, n. 5, p. 1, doi. 10.1007/s00339-025-08512-z

By:

Fletcher, A. S. Augustine;
Murugapandiyan, P.;
Mohanbabu, A.;
Dhanasekar, S.;
Saranya, G.

Publication type:

Article

Improved COT control strategy for CRM Boost-PFC circuits applied to marine integrated power systems.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-01888-1

By:

Chen, Hongxing;
Xiao, Jian;
Lin, Jianwen;
Liu, Chen;
Zhuang, Shengbin;
Wang, Zhiyuan

Publication type:

Article

Performance Estimation of Dual-Halo Dual-Material Silicon-On-Insulator with High-K Dielectrics for Low Power Applications.

Published in:

Journal of Engineering Science & Technology Review, 2025, v. 18, n. 2, p. 49

By:

Pawan;
Sachdeva, Nitin;
Dhiman, Rohtash;
Singh, Shailendra Narayan;
Sharma, Swati;
Jain, Rachna;
Panchal, Vinod Kumar

Publication type:

Article

SnO Nanosheet Transistor with Remarkably High Hole Effective Mobility and More than Six Orders of Magnitude On-Current/Off-Current.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 9, p. 640, doi. 10.3390/nano15090640

By:

Chen, Kuan-Chieh;
Wu, Jiancheng;
Pooja, Pheiroijam;
Chin, Albert

Publication type:

Article

Zero-Power consumption based evaporative cooling for rated current conduction in SiC mosfets.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-00946-y

By:

Hong, Kuo-Bin;
Singh, Shivendra Kumar;
Sung, Chen;
Hsiao, Yu-Sheng;
Hsiao, Yi-Kai;
Chauhan, Yogesh Singh;
Kuo, Hao-Chung;
Wu, Tian-Li;
Tu, Chang-Ching

Publication type:

Article

Noise Performance Evaluation of Recessed-Drain/Source Junctionless Gate-All-Around MOSFETs.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4798, doi. 10.1007/s11664-025-11928-1

By:

Kumar, Alok;
Gupta, Tarun Kumar;
Shrivastava, Bhavana P.;
Gupta, Abhinav

Publication type:

Article

A Novel Asymmetric Trench SiC MOSFET with L-shaped Split Gate for Low Power Consumption and Fast Recovery.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4786, doi. 10.1007/s11664-025-11892-w

By:

Chen, Weizhong;
Deng, Zhijie;
Chen, Zesheng;
Zhou, Yangqi;
Han, Zhengsheng;
Wang, Zeheng

Publication type:

Article

Three switched transistors control algorithm for high efficiency regenerative braking system with BLDC motor.

Published in:

Przegląd Elektrotechniczny, 2025, v. 2025, n. 4, p. 94, doi. 10.15199/48.2025.04.18

By:

STAWCZYK, Paweł

Publication type:

Article

Commissioning and performance assessment of diodes and MOSFETs in in-vivo dosimetry for external beam radiation therapy.

Published in:

Radiation & Environmental Biophysics, 2025, v. 64, n. 2, p. 275, doi. 10.1007/s00411-025-01117-3

By:

Al Kharusi, Omama;
Al Mamari, Raya;
Al Hosni, Balaqis;
Al Amri, Iqbal;
Al Fishawy, Mahmoud;
Boulassel, Mohamed-Rachid;
Bouchareb, Yassine

Publication type:

Article

3.3 kV급 실리콘 카바이드 접합 장벽 쇼트키 다이오드용 접합 종료 확장과 P+ 가드링의 최적화.

Published in:

Journal of the Korea Institute of Information & Communication Engineering, 2025, v. 29, n. 4, p. 502, doi. 10.6109/jkiice.2025.29.4.502

By:

김선구;
유윤섭

Publication type:

Article

A novel topology of a non‐isolated bidirectional multiphase single inductor DC–DC converter.

Published in:

International Journal of Circuit Theory & Applications, 2025, v. 53, n. 5, p. 2467, doi. 10.1002/cta.4257

By:

Igor Carvalho Lobato, Gideon;
Berrehil El Kattel, Menaouar;
Marcelo Antunes, Fernando Luiz;
Silva, Sidelmo Magalhães;
de Jesus Cardoso Filho, Braz

Publication type:

Article

High‐frequency digitally adaptive pulse skipping modulated voltage‐mode controlled quadratic buck converter.

Published in:

International Journal of Circuit Theory & Applications, 2025, v. 53, n. 5, p. 2541, doi. 10.1002/cta.4247

By:

Kumar Gupta, Vijay;
Chandra Mandi, Bipin

Publication type:

Article

Junction temperature monitoring of silicon carbide MOSFET based on turn‐off voltage spike.

Published in:

International Journal of Circuit Theory & Applications, 2025, v. 53, n. 5, p. 2927, doi. 10.1002/cta.4245

By:

Liu, Xinbo;
Liu, Bo;
He, Shuiyuan;
Diao, Lijian;
Diao, Lijun

Publication type:

Article

Low-power, high-performance SOI CMOS.

Published in:

Solid State Technology, 2001, v. 44, n. 11, p. 63

By:

Pelloie, Jean-Lac;
Auberton-Herve, Andre

Publication type:

Article

Low-energy plasma-enhanced CVD facilities high mobility SiGe.

Published in:

Solid State Technology, 2000, v. 43, n. 12, p. 30

By:

Demmin, Jeffrey C.

Publication type:

Article

Gd oxide may bring better GaAs, more talk.

Published in:

Solid State Technology, 1999, v. 42, n. 6, p. 28

By:

Burggraaf, Pieter

Publication type:

Article

Double-gate MOSFET demonstrates 25-nm thick channel.

Published in:

Solid State Technology, 1998, v. 41, n. 3, p. 24

By:

K.D.

Publication type:

Article

Nanoscale NMOS Device Model Analysis and its Characteristics.

Published in:

Macromolecular Symposia, 2025, v. 414, n. 1, p. 1, doi. 10.1002/masy.202400191

By:

Singh, Palvinder;
Sachdeva, Amit;
Singh, Shruti;
Yahya, M. Z. A.;
Rahman, Nor Mas Mira Abd;
Pal, Rishi

Publication type:

Article

Patterned Growth: Patterned Growth of P-Type MoS2 Atomic Layers Using Sol-Gel as Precursor (Adv. Funct. Mater. 35/2016).

Published in:

Advanced Functional Materials, 2016, v. 26, n. 35, p. 6495, doi. 10.1002/adfm.201670230

By:

Zheng, Wei;
Lin, Junhao;
Feng, Wei;
Xiao, Kai;
Qiu, Yunfeng;
Chen, XiaoShuang;
Liu, Guangbo;
Cao, Wenwu;
Pantelides, Sokrates T.;
Zhou, Wu;
Hu, PingAn

Publication type:

Article

Biodegradable Thin Metal Foils and Spin-On Glass Materials for Transient Electronics.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 12, p. 1789, doi. 10.1002/adfm.201403469

By:

Kang, Seung‐Kyun;
Hwang, Suk‐Won;
Yu, Sooyoun;
Seo, Jung‐Hun;
Corbin, Elise A.;
Shin, Jiho;
Wie, Dae Seung;
Bashir, Rashid;
Ma, Zhenqiang;
Rogers, John A.

Publication type:

Article

Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 41, p. 6503, doi. 10.1002/adfm.201401438

By:

Xiong, Kanglin;
Park, Sung Hyun;
Song, Jie;
Yuan, Ge;
Chen, Danti;
Leung, Benjamin;
Han, Jung

Publication type:

Article

Dissolvable Metals for Transient Electronics.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 5, p. 645, doi. 10.1002/adfm.201301847

By:

Yin, Lan;
Cheng, Huanyu;
Mao, Shimin;
Haasch, Richard;
Liu, Yuhao;
Xie, Xu;
Hwang, Suk‐Won;
Jain, Harshvardhan;
Kang, Seung‐Kyun;
Su, Yewang;
Li, Rui;
Huang, Yonggang;
Rogers, John A.

Publication type:

Article

Effect of Gate Electrode Work-Function on Source Charge Injection in Electrolyte-Gated Organic Field-Effect Transistors.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 5, p. 695, doi. 10.1002/adfm.201302070

By:

Fabiano, Simone;
Braun, Slawomir;
Fahlman, Mats;
Crispin, Xavier;
Berggren, Magnus

Publication type:

Article

Potential of copper oxide thin film-based sensor probe for carbon dioxide gas monitoring.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 35, p. 26286, doi. 10.1007/s10854-022-09312-4

By:

Bhowmick, T.;
Ghosh, A.;
Ambardekar, V.;
Nag, S.;
Majumder, S. B.

Publication type:

Article

A stacked high-Ge-concentration SiGe/Ge multilayer on a novel Ge + SiGe SRB structure for the gate-all-around MOSFETS.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 29, p. 22926, doi. 10.1007/s10854-022-09062-3

By:

Liu, Haoyan;
Li, Yongliang;
Cheng, Xiaohong;
Li, Chun;
Zhang, Jiayi;
Luo, Jun;
Wang, Wenwu;
Ye, Tianchun

Publication type:

Article

Spectral and temporal performance enhancement in a symmetric co-planar Au–Ge/AlGaAs/Au–Ge natural superlattice-based MSM photodetector.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 12, p. 9690, doi. 10.1007/s10854-022-07720-0

By:

Maitra, Tamaghna;
Mukherjee, Sukhendu;
Pradhan, Anway;
Mukherjee, Suman;
Nayak, Arabinda;
Bhunia, Satyaban

Publication type:

Article

Electrical characterization of Cu-doped CdS p-type thin film transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 20, p. 25462, doi. 10.1007/s10854-021-07006-x

By:

Berman-Mendoza, D.;
Diaz-Grijalva, O. I.;
López-Delgado, R.;
Ramos-Carrazco, A.;
Alvarez-Ramos, M. E.;
Romo-Garcìa, F.;
Higuera-Valenzuela, H. J.;
Rangel, R.

Publication type:

Article

Thermal stability issue of ultrathin Ti-based silicide for its application in prospective DRAM peripheral 3D FinFET transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 19, p. 24107, doi. 10.1007/s10854-021-06874-7

By:

Liu, Yaodong;
Xu, Jing;
Gao, Jianfeng;
Liu, Jinbiao;
Zhang, Dan;
Zhou, Xuebing;
Sun, Xianglie;
Li, Yongliang;
Li, Junfeng;
Zhao, Chao;
Wang, Wenwu;
Chen, Dapeng;
Ye, Tianchun;
Luo, Jun

Publication type:

Article

The electrical characteristics of metal–semiconductor hetero-structures with graphene oxide and perylenetetracarboxylic dianhydride interface.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 13, p. 17500, doi. 10.1007/s10854-021-06283-w

By:

Berk, Niyazi;
Seymen, Halil;
Orak, Ikram;
Karataş, Şükrü

Publication type:

Article

Fabrication of MIS photodetector with Ge nanocrystals grown by MBE.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 12, p. 16800, doi. 10.1007/s10854-021-06237-2

By:

Aouassa, M.;
M'gaieth, R.;
Azeza, B.;
Berbezier, I.;
Favre, L.

Publication type:

Article

Performance evaluation of junctionless double surrounding gate In0.53Ga0.47As nanotube MOSFET using dual material gate engineering.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 7, p. 9171, doi. 10.1007/s10854-021-05583-5

By:

Sanjay;
Prasad, B.;
Vohra, Anil

Publication type:

Article

Selective wet etching in fabricating SiGe nanowires with TMAH solution for gate-all-around MOSFETs.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 24, p. 22478, doi. 10.1007/s10854-020-04748-y

By:

Cheng, Xiaohong;
Li, Yongliang;
Liu, Haoyan;
Zan, Ying;
Lu, Yihong;
Zhang, Qingzhu;
Li, Junjie;
Du, Anyan;
Wu, Zhenhua;
Luo, Jun;
Wang, Wenwu

Publication type:

Article

Enhanced gas sensing properties for ethanol of Ag@ZnSnO3 nano-composites.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 21, p. 18649, doi. 10.1007/s10854-020-04407-2

By:

Xu, Wen;
Wang, Xiuyu;
Leng, Binxin;
Ma, Jiajun;
Qi, Zhinan;
Tao, Tao;
Wang, Mingming

Publication type:

Article

Influence of finite size and surface effects on the structural, electrical and magnetic properties of nanostructured nickel oxide.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 7, p. 5769, doi. 10.1007/s10854-020-03147-7

By:

Sheena, P. A.;
Hitha, H.;
Sreedevi, A.;
Varghese, Thomas

Publication type:

Article

Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 2, p. 935, doi. 10.1007/s10854-019-02603-3

By:

Yildiz, D. E.;
Gullu, H. H.;
Sarilmaz, A.;
Ozel, F.;
Kocyigit, A.;
Yildirim, M.

Publication type:

Article

Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 5, p. 4339, doi. 10.1007/s10854-019-00747-w

By:

Seixas, Luís Eduardo;
Gonçalez, Odair Lellis;
Vaz, Rafael Galhardo;
da Costa Telles, Antonio Carlos;
Finco, Saulo;
Gimenez, Salvador Pinillos

Publication type:

Article

The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9753, doi. 10.1007/s10854-015-3645-4

By:

Yang, Fan;
Yao, Yao;
He, Zhiyuan;
Zhou, Guilin;
Zheng, Yue;
He, Liang;
Zhang, Jincheng;
Ni, Yiqiang;
Zhou, Deqiu;
Shen, Zhen;
Zhong, Jian;
Wu, Zhisheng;
Zhang, Baijun;
Liu, Yang

Publication type:

Article

Selective epitaxy growth of SiGe layers for MOSFETs and FinFETs.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4584, doi. 10.1007/s10854-015-3123-z

By:

Radamson, Henry;
Kolahdouz, Mohammadreza

Publication type:

Article

Palladium diffusion in germanium.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 3787, doi. 10.1007/s10854-015-2903-9

By:

Chroneos, A.;
Vovk, R.

Publication type:

Article

Modeling indium diffusion in germanium by connecting point defect parameters with bulk properties.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 4, p. 2113, doi. 10.1007/s10854-014-2655-y

By:

Chroneos, A.;
Vovk, R.

Publication type:

Article

Numerical analysis of Double Gate and Gate All Around MOSFETs with bulk trap states.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 248, doi. 10.1007/s10854-007-9531-y

By:

Abdi, M. A.;
Djeffal, F.;
Arar, D.;
Hafiane, M. L.

Publication type:

Article

Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current transients.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 161, doi. 10.1007/s10854-007-9301-x

By:

Hayama, K.;
Takakura, K.;
Ohyama, H.;
Rafí, J. M.;
Mercha, A.;
Simoen, E.;
Claeys, C.

Publication type:

Article

A review on the balancing design of micro drills.

Published in:

International Journal of Advanced Manufacturing Technology, 2023, v. 126, n. 11/12, p. 4849, doi. 10.1007/s00170-023-11496-w

By:

Huang, Xiangyu;
Jiang, Feng;
Wang, Zhibin;
Wu, Xian;
Huang, Shizhan;
Liu, Yufa;
Zhang, Jinxian;
Shi, Xixiang

Publication type:

Article

Improvement of part straightness accuracy by controlling discharge energy in WEDM.

Published in:

International Journal of Advanced Manufacturing Technology, 2023, v. 126, n. 9/10, p. 4685, doi. 10.1007/s00170-023-11462-6

By:

Deng, Cong;
Liu, Zhidong;
Pan, Hongwei;
Qiu, Mingbo

Publication type:

Article

Statistical supervised learning with engineering data: a case study of low frequency noise measured on semiconductor devices.

Published in:

International Journal of Advanced Manufacturing Technology, 2022, v. 120, n. 9/10, p. 5835, doi. 10.1007/s00170-022-08949-z

By:

Gámiz, María Luz;
Kalén, Anton;
Nozal-Cañadas, Rafael;
Raya-Miranda, Rocío

Publication type:

Article

Improved DC-DC converter based on quadruple boosting technique for high-voltage gain in photovoltaic systems.

Published in:

Electrical Engineering, 2025, v. 107, n. 4, p. 5231, doi. 10.1007/s00202-024-02804-y

By:

Abdulhadi, Haider Mohammed

Publication type:

Article

Novel high-gain boost converter with experimentally validated ADRC control technique for renewable energy applications.

Published in:

Electrical Engineering, 2025, v. 107, n. 1, p. 899, doi. 10.1007/s00202-024-02545-y

By:

Kumar, Priyanshu;
Ajmeri, Moina;
Singh, Ashutosh Kumar;
Mandal, Rajib Kumar

Publication type:

Article

Evaluation of single-phase interlinking converter topologies for hybrid AC/DC microgrids considering efficiency and cost.

Published in:

Electrical Engineering, 2023, v. 105, n. 6, p. 3737, doi. 10.1007/s00202-023-01917-0

By:

Schneider, Magno Otton;
de Oliveira, Thiago Ribeiro;
Vicente, Eduardo Moreira

Publication type:

Article

Design and implementation of high-power factor isolated Ćuk converter-based LED driver with SiC MOSFET.

Published in:

Electrical Engineering, 2023, v. 105, n. 1, p. 465, doi. 10.1007/s00202-022-01679-1

By:

Sehirli, Erdal;
Üstün, Özgür

Publication type:

Article

Battery management system with active inrush current control for Li-ion battery in light electric vehicles.

Published in:

Electrical Engineering, 2016, v. 98, n. 1, p. 17, doi. 10.1007/s00202-015-0344-3

By:

Fuengwarodsakul, Nisai

Publication type:

Article