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Wide Bandgap SiC-Based Oxide Thickness Optimization by Computation and Simulation using Enhanced Electron Mobility with Regulated Gate Voltage Technique for High-Power 4H-SiC MOSFET.
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- Journal of Engineering & Technological Sciences, 2024, v. 56, n. 3, p. 367, doi. 10.5614/j.eng.technol.sci.2024.56.3.5
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On the Evaluation of Gate Dielectrics for 4H‐SiC Based Power MOSFETs.
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- Active & Passive Electronic Components, 2024, v. 2024, p. 1, doi. 10.1155/2015/651527
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Study on the Single-Event Burnout Effect Mechanism of SiC MOSFETs Induced by Heavy Ions.
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- Electronics (2079-9292), 2024, v. 13, n. 17, p. 3402, doi. 10.3390/electronics13173402
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Review on Short-Circuit Protection Methods for SiC MOSFETs.
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- Energies (19961073), 2024, v. 17, n. 17, p. 4523, doi. 10.3390/en17174523
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Modelling and Evalaution of the Bidirectional Surge Current Robustness of Si(-IGBT and -Diode), SiC(-MOSFETs and -JFET) and GaN(-HEMTs) Devices.
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- Energies (19961073), 2024, v. 17, n. 17, p. 4362, doi. 10.3390/en17174362
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Concept of Enabling Over-Current Capability of Silicon-Carbide-Based Power Converters with Gate Voltage Augmentation.
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- Energies (19961073), 2024, v. 17, n. 17, p. 4319, doi. 10.3390/en17174319
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Improvement of Philips MOS model 9 radio frequency performance with circuit level parasitic compensation.
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- International Journal of Electrical & Computer Engineering (2088-8708), 2024, v. 14, n. 5, p. 4977, doi. 10.11591/ijece.v14i5.pp4977-4986
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Eco-friendly water-induced lithium oxide/polyethyleneimine ethoxylated as a possible gate dielectric of the organic field effect transistor.
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- Journal of Materials Science: Materials in Electronics, 2024, v. 35, n. 26, p. 1, doi. 10.1007/s10854-024-13391-w
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Capacitances and Charge Distribution Analysis in Graded-Channel SOI MOSFETS.
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- Journal of Integrated Circuits & Systems, 2024, v. 19, n. 2, p. 1, doi. 10.29292/jics.v19i2.837
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Two-level Stacked Nanowire MOSFETs: A Low Temperature Analysis of the Low-Field Mobility Degradation Factors.
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- Journal of Integrated Circuits & Systems, 2024, v. 19, n. 2, p. 1, doi. 10.29292/jics.v19i2.816
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Temperature Measurement of a Nanowire SOI Transistor Using a Parallel Gated SOI PIN Diode.
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- Journal of Integrated Circuits & Systems, 2024, v. 19, n. 2, p. 1, doi. 10.29292/jics.v19i2.818
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Analysis of 3D Channel Current Noise in Small Nanoscale MOSFETs Using Monte Carlo Simulation.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 16, p. 1359, doi. 10.3390/nano14161359
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An Improved SPWM Strategy for Effectively Reducing Total Harmonic Distortion.
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- Electronics (2079-9292), 2024, v. 13, n. 16, p. 3326, doi. 10.3390/electronics13163326
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Realization of 3D reflectors by using metal-air and semiconductor-air based photonic structures at three communication windows.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 335, doi. 10.15407/spqeo24.03.335
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The advancement of silicon-on-insulator (SOI) devices and their basic properties.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 227, doi. 10.15407/spqeo23.03.227
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Impact of sidewall spacer on gate leakage behavior of nano-scale MOSFETs.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 2, p. 203
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A neural computation to study the scaling capability of the undoped DG MOSFET.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 2, p. 196, doi. 10.15407/spqeo11.02.196
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Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 2, p. 69, doi. 10.15407/spqeo9.02.069
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Identifying Model Parameters of Semiconductor Devices Using Optimization Techniques.
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- Journal of Computing & Information Technology, 2007, v. 15, n. 4, p. 331, doi. 10.2498/cit.1001141
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DC-DC Converter with Pi Controller for BLDC Motor Fuzzy Drive System.
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- Computer Systems Science & Engineering, 2023, v. 46, n. 1, p. 2811, doi. 10.32604/csse.2023.029945
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2D Nanosheets and Their Composite Membranes for Water, Gas, and Ion Separation.
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- Angewandte Chemie, 2019, v. 131, n. 49, p. 17674, doi. 10.1002/ange.201814349
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Understanding Nanoscale Plasticity by Quantitative In Situ Conductive Nanoindentation.
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- Advanced Engineering Materials, 2021, v. 23, n. 9, p. 1, doi. 10.1002/adem.202001494
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Efficient GPU implementation of a Boltzmann-Schrödinger-Poisson solver for the simulation of nanoscale DG MOSFETs.
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- Journal of Supercomputing, 2023, v. 79, n. 12, p. 13370, doi. 10.1007/s11227-023-05189-0
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The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9753, doi. 10.1007/s10854-015-3645-4
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Selective epitaxy growth of SiGe layers for MOSFETs and FinFETs.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4584, doi. 10.1007/s10854-015-3123-z
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Palladium diffusion in germanium.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 3787, doi. 10.1007/s10854-015-2903-9
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Modeling indium diffusion in germanium by connecting point defect parameters with bulk properties.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 4, p. 2113, doi. 10.1007/s10854-014-2655-y
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Numerical analysis of Double Gate and Gate All Around MOSFETs with bulk trap states.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 248, doi. 10.1007/s10854-007-9531-y
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Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current transients.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 161, doi. 10.1007/s10854-007-9301-x
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Noise characterisation of GaN current aperture vertical electron transistor metal‐insulated semiconductor field effect transistor with Δ‐shaped gate for low noise radio frequency amplifiers.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2022, v. 32, n. 11, p. 1, doi. 10.1002/mmce.23401
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A power amplifier with bandwidth expansion and linearity enhancement in 130 nm complementary metal‐oxide‐semiconductor process.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2021, v. 31, n. 6, p. 1, doi. 10.1002/mmce.22626
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MOSFET‐C‐based grounded active inductors with electronically tunable properties.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2020, v. 30, n. 8, p. 1, doi. 10.1002/mmce.22274
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Modeling and Parameter Extraction of Test Fixtures for MOSFET On-Wafer Measurements up to 60 GHz.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2013, v. 23, n. 6, p. 655, doi. 10.1002/mmce.20701
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Neural-space mapping-based large-signal modeling for MOSFET.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2011, v. 21, n. 3, p. 353, doi. 10.1002/mmce.20524
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Bias-dependent small-signal modeling based on neuro-space mapping for MOSFET.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2011, v. 21, n. 2, p. 182, doi. 10.1002/mmce.20502
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Neuro-space mapping-based DC modeling for 130-nm MOSFET.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2010, v. 20, n. 5, p. 587, doi. 10.1002/mmce.20469
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A scalable advanced RF IC design-oriented MOSFET model.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2008, v. 18, n. 4, p. 314, doi. 10.1002/mmce.20288
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Enabling a compact model to simulate the RF behavior of MOSFETs in SPICE.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2005, v. 15, n. 3, p. 255, doi. 10.1002/mmce.20080
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Empirical nonlinear modeling for RF MOSFETs.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2004, v. 14, n. 2, p. 182, doi. 10.1002/mmce.10129
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Deep-submicron drain current to radio frequency silicon on insulator metal oxide semiconductor field-effect transistor macromodel for designing microwave circuits.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2002, v. 12, n. 5, p. 428, doi. 10.1002/mmce.10045
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A Technical Review on the Proper Design of Gate Drivers in Industrial Power Electronics Applications.
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- International Journal of Industrial Electronics Control & Optimization, 2024, v. 7, n. 2, p. 109
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LOCALLY FABRICATED UNINTERUPTED POWER SUPPLY (UPS) FOR SYSTEM COMPATIBILITY.
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- International Journal of Academic Research & Innovation, 2021, p. 10
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Time‐domain signal and noise modelling and analysis of millimetre‐wave and THz high electron mobility transistors.
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- IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2021, v. 15, n. 12, p. 1636, doi. 10.1049/mia2.12173
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Complementary current reuse quadrature voltage-controlled oscillators.
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- IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2016, v. 10, n. 7, p. 756, doi. 10.1049/iet-map.2015.0227
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Effects and contrasts of silicon-on-insulator floating-body and body-contacted field-effect transistors to the design of high-performance antenna switches.
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- IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2016, v. 10, n. 5, p. 507, doi. 10.1049/iet-map.2015.0487
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Broadband complementary metal-oxide semiconductor single-pole-double-throw switch with improved power handling capability using dual-gate metal-oxide semiconductor field-effect transistors.
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- IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2015, v. 9, n. 6, p. 502, doi. 10.1049/iet-map.2013.0463
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Integration of electrically detected magnetic resonance on a chip (EDMRoC) with charge pumping for low-cost and sensitive defect characterization in SiC MOSFETs.
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- Magnetic Resonance, 2024, p. 1, doi. 10.5194/mr-2024-11
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VLSI Structures for DNA Sequencing--A Survey.
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- Bioengineering (Basel), 2020, v. 7, n. 2, p. 1, doi. 10.3390/bioengineering7020049
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IMPLEMENTATION OF POWER REDUCTION IN CMOS CIRCUITS.
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- i-Manager's Journal on Circuits & Systems, 2019, v. 7, n. 4, p. 20, doi. 10.26634/jcir.7.4.16832
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PERFORMANCE ANALYSIS OF ADDER CIRCUITS USING FINFET'S.
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- i-Manager's Journal on Circuits & Systems, 2017, v. 5, n. 3, p. 1, doi. 10.26634/jcir.5.3.13811
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