Works matching DE "METAL oxide semiconductor field-effect transistor circuits"
Results: 58
A Temperature-Independent Gate-Oxide Degradation Monitoring Method for Silicon Carbide Metal Oxide–Semiconductor Field-Effect Transistors Based on Turn-Off Ringing.
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- Electronics (2079-9292), 2025, v. 14, n. 4, p. 771, doi. 10.3390/electronics14040771
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Gate driver, snubber and circuit design considerations for fast‐switching series‐connected SiC MOSFETs.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 14, p. 1867, doi. 10.1049/pel2.12744
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Effect of common branch impedance coupling and mutual inductance on current sharing of paralleled SiC MOSFETs with different layouts.
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- IET Power Electronics (Wiley-Blackwell), 2022, v. 15, n. 1, p. 43, doi. 10.1049/pel2.12211
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Graphene nanoribbon FET technology‐based OTA for optimizing fast and energy‐efficient electronics for IoT application: Next‐generation circuit design.
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- Micro & Nano Letters (Wiley-Blackwell), 2024, v. 19, n. 6, p. 1, doi. 10.1049/mna2.70002
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Design of isolated IGBT driving and control circuits for an interleaved boost converter.
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- Engineering & Applied Science Research, 2021, v. 48, n. 1, p. 48, doi. 10.14456/easr.2021.6
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Design of circuit driver for display-body used in solid volumetric true 3D display.
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- Chinese Journal of Liquid Crystal & Displays, 2015, v. 30, n. 2, p. 263, doi. 10.3788/YJYXS20153002.0263
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- Article
ПОСЛІДОВНЕ З'ЄДНАННЯ РЕЗОНАНСНИХ ІНВЕРТОРІВ НАПРУГИ ВИСОКОЧАСТОТНИХ УСТАНОВОК ІНДУКЦІЙНОГО НАГРІВУ
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- Technical Electrodynamics / Tekhnichna Elektrodynamika, 2018, n. 4, p. 70, doi. 10.15407/techned2018.04.070
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DESIGN OF FREQUENCY EFFICIENT CMOS DIFFERENCE AMPLIFIER CIRCUIT FOR SIGMA DELTA ADC FOR AEROSPACE APPLICATIONS.
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- i-Manager's Journal on Electronics Engineering, 2021, v. 12, n. 1, p. 10
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- Article
Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET.
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- Micromachines, 2019, v. 10, n. 5, p. 314, doi. 10.3390/mi10050314
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POWER PLAY: Programmable power supplies & loads vendors tackle renewable energy, power efficiency.
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- EE: Evaluation Engineering, 2019, v. 58, n. 3, p. 8
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New full‐wave rectifier based on modified voltage differencing transconductance amplifier.
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- IET Circuits, Devices & Systems (Wiley-Blackwell), 2022, v. 16, n. 4, p. 322, doi. 10.1049/cds2.12106
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- Article
Low‐temperature SOI SiGe/Si superlattice FinFET with omega‐shaped channel and self‐allied silicide for 3D sequential IC.
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- Electronics Letters (Wiley-Blackwell), 2024, v. 60, n. 21, p. 1, doi. 10.1049/ell2.70026
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A novel fabrication of TDMOSFETs using two-step trench etching and twice self-alignment technique.
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- International Journal of Electronics Letters, 2019, v. 7, n. 4, p. 473, doi. 10.1080/21681724.2018.1540059
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An analytical drain current model for cylindrical gate DMG-GC-DOT MOSFET.
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- International Journal of Electronics Letters, 2019, v. 7, n. 4, p. 458, doi. 10.1080/21681724.2018.1540058
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- Article
Improvement of Philips MOS model 9 radio frequency performance with circuit level parasitic compensation.
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- International Journal of Electrical & Computer Engineering (2088-8708), 2024, v. 14, n. 5, p. 4977, doi. 10.11591/ijece.v14i5.pp4977-4986
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- Article
Noise Characterization in InAlAs/InGaAs/InP pHEMTs for Low Noise Applications.
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- International Journal of Electrical & Computer Engineering (2088-8708), 2017, v. 7, n. 1, p. 176, doi. 10.11591/ijece.v7i1.pp176-183
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- Article
A novel low-loss control strategy for bidirectional DC-DC converter.
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- International Journal of Circuit Theory & Applications, 2017, v. 45, n. 11, p. 1801, doi. 10.1002/cta.2373
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- Article
Wide-locking range divide-by-4 injection-locked frequency divider using injection MOSFET DC-biased above threshold region.
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- International Journal of Circuit Theory & Applications, 2016, v. 44, n. 5, p. 968, doi. 10.1002/cta.2116
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Design of ultra low-power RF oscillators based on the inversion coefficient methodology using BSIM6 model.
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- International Journal of Circuit Theory & Applications, 2016, v. 44, n. 2, p. 382, doi. 10.1002/cta.2082
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A systematic class AB state space synthesis method based on MOSFET square law and translinear square-root cells.
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- International Journal of Circuit Theory & Applications, 2015, v. 43, n. 12, p. 241, doi. 10.1002/cta.2054
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A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages.
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- International Journal of Circuit Theory & Applications, 2015, v. 43, n. 12, p. 49, doi. 10.1002/cta.2057
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0.5-V bulk-driven OTA and its applications.
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- International Journal of Circuit Theory & Applications, 2015, v. 43, n. 2, p. 187, doi. 10.1002/cta.1932
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Analysis and Implementation of an Interleaved ZVS Converter with High Input Voltage.
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- International Journal of Circuit Theory & Applications, 2013, v. 41, n. 9, p. 924, doi. 10.1002/cta.830
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- Article
Snubber Circuit Used as the Temperature Dissipation of Mosfet for Electric Car Drive System.
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- Journal of Science & Technology MSU, 2016, v. 35, n. 3, p. 350
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Design and Implementation of a Paralleled Discrete SiC MOSFET Half-Bridge Circuit with an Improved Symmetric Layout and Unique Laminated Busbar.
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- Energies (19961073), 2023, v. 16, n. 6, p. 2903, doi. 10.3390/en16062903
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A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET.
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- Energies (19961073), 2021, v. 14, n. 9, p. 2449, doi. 10.3390/en14092449
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Photovoltaic-Driven SiC MOSFET Circuit Breaker with Latching and Current Limiting Capability.
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- Energies (19961073), 2019, v. 12, n. 23, p. 4585, doi. 10.3390/en12234585
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Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT.
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- Energies (19961073), 2019, v. 12, n. 23, p. 4546, doi. 10.3390/en12234546
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Modeling Temperature Response Profile of MOSFET Chip with Heat Sink Parameters in Power Inverters.
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- Acta Mechanica Slovaca, 2022, v. 26, n. 1, p. 26, doi. 10.21496/ams.2022.010
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New pixel driving circuit using self-discharging compensation method for high-resolution OLED micro displays on a silicon backplane.
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- Journal of the Society for Information Display, 2017, v. 25, n. 3, p. 167, doi. 10.1002/jsid.540
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A control approach for alternating current disturbance signal of fuel cells based on MOSFET high‐speed switch.
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- Fuel Cells, 2021, v. 21, n. 3, p. 269, doi. 10.1002/fuce.202000176
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- Article
NMOS only Schmitt trigger circuit for NBTI resilient CMOS circuits.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 14, p. 868, doi. 10.1049/el.2018.0546
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Integratable trench MOSFET with ultra-low specific on-resistance.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 17, p. 1348, doi. 10.1049/el.2015.1493
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Physical origin of gate voltage-dependent drain-source capacitance in short-channel MOSFETs.
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- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 24, p. 1879, doi. 10.1049/el.2014.2971
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- Article
Improvement of the Electronic Control Unit for Ignition and Injection in a Wankel Engine.
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- Gümüshane Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2020, v. 10, n. 3, p. 742, doi. 10.17714/gumusfenbil.689267
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Performance Enhancement Of OTA Using Double Gate MOSFET.
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- International Journal of Advanced Research in Computer Science, 2015, v. 6, n. 5, p. 1
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- Article
Wpływ obwodów odciążających na łączeniowe straty energii w przekształtnikach wysokiej częstotliwości.
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- Przegląd Elektrotechniczny, 2020, v. 96, n. 6, p. 93, doi. 10.15199/48.2020.06.17
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Jednoczesny, dwuczęstotliwościowy falownik do nagrzewania indukcyjnego o strukturze półmostka SiC MOSFET.
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- Przegląd Elektrotechniczny, 2018, v. 94, n. 9, p. 95, doi. 10.15199/48.2018.09.23
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- Article
Transient Electro-Thermal Analysis of a Common Source Amplifier Circuit with a Physics-based MOSFET Model.
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- Applied Computational Electromagnetics Society Journal, 2019, v. 34, n. 7, p. 1076
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- Article
Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits.
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- International Journal of Electronics & Telecommunications, 2021, v. 67, n. 4, p. 609, doi. 10.24425/ijet.2021.137853
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- Article
Performance Comparison of Stacked Dual- Metal Gate Engineered Cylindrical Surrounding Double-Gate MOSFET.
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- International Journal of Electronics & Telecommunications, 2021, v. 67, n. 1, p. 29, doi. 10.24425/ijet.2021.135940
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- Article
A Self-Powered DSSH Circuit with MOSFET Threshold Voltage Management for Piezoelectric Energy Harvesting.
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- Micromachines, 2023, v. 14, n. 8, p. 1639, doi. 10.3390/mi14081639
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Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress.
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- Micromachines, 2023, v. 14, n. 3, p. 505, doi. 10.3390/mi14030505
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- Article
Voltage balancing control based on gate signal delay in series connection of SiC‐MOSFET.
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- Electronics & Communications in Japan, 2019, v. 102, n. 6, p. 25, doi. 10.1002/ecj.12165
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- Article
Stochastic filtering in fractional-order circuits.
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- Nonlinear Dynamics, 2021, v. 103, n. 1, p. 1117, doi. 10.1007/s11071-020-06152-x
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A Modified Marx Generator Circuit with Enhanced Tradeoff between Voltage and Pulse Width for Electroporation Applications.
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- Electronics (2079-9292), 2022, v. 11, n. 13, p. N.PAG, doi. 10.3390/electronics11132013
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- Article
Suppressing Voltage Spikes of MOSFET in H-Bridge Inverter Circuit.
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- Electronics (2079-9292), 2021, v. 10, n. 4, p. 390, doi. 10.3390/electronics10040390
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- Article
Ultra-Low Power Consuming Direct Radiation Sensors Based on Floating Gate Structures.
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- Journal of Low Power Electronics & Applications, 2017, v. 7, n. 3, p. 20, doi. 10.3390/jlpea7030020
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Investigations of Hot-carrier-induced Degradation for 700 V n-LDMOS Transistor Under Different Stress Conditions.
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- IETE Journal of Research, 2013, v. 59, n. 4, p. 410, doi. 10.4103/0377-2063.118061
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- Article
Research on SiC Speed Controller for High‐Voltage Distributed Electric Propulsion System.
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- International Journal of Aerospace Engineering, 2024, v. 2024, p. 1, doi. 10.1155/2024/1309515
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- Article