Works matching DE "METAL oxide semiconductor capacitors"
Results: 146
Promoting Surface Electric Conductivity for High‐Rate LiCoO<sub>2</sub>.
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- Angewandte Chemie, 2023, v. 135, n. 10, p. 1, doi. 10.1002/ange.202218595
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- Publication type:
- Article
High-quality spin-on glass-based oxide as a matrix for embedding HfO nanoparticles for metal-oxide-semiconductor capacitors.
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- Journal of Materials Science, 2012, v. 47, n. 5, p. 2248, doi. 10.1007/s10853-011-6036-0
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- Article
Modular solid-state pulse generator based on multi-turn LTD.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 11, p. 2342, doi. 10.1049/iet-pel.2019.1184
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- Article
Coupled-inductor-based high step-up DC--DC converter.
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- IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 12, p. 1, doi. 10.1049/iet-pel.2018.6151
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- Publication type:
- Article
Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterization (Adv. Mater. Interfaces 20/2021).
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- Advanced Materials Interfaces, 2021, v. 8, n. 20, p. 1, doi. 10.1002/admi.202170113
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- Article
Au-ZnO Nanocomposite Films for Plasmonic Photocatalysis.
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- Advanced Materials Interfaces, 2015, v. 2, n. 11, p. n/a, doi. 10.1002/admi.201500156
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- Article
Sol-Gel Synthesis of Carbon-Coated LaCoO<sub>3</sub> for Effective Electrocatalytic Oxidation of Salicylic Acid.
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- ChemElectroChem, 2017, v. 4, n. 4, p. 935, doi. 10.1002/celc.201600714
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- Article
Ultrafine Fe<sub>3</sub>O<sub>4</sub> Quantum Dots on Hybrid Carbon Nanosheets for Long-Life, High-Rate Alkali-Metal Storage.
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- ChemElectroChem, 2016, v. 3, n. 1, p. 38, doi. 10.1002/celc.201500410
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- Article
Minimum MOS Transistor Count Fractional-Order Voltage-Mode and Current-Mode Filters †.
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- Technologies (2227-7080), 2019, v. 7, n. 4, p. 85, doi. 10.3390/technologies7040085
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- Article
A Novel ON-State Resistance Modeling Technique for MOSFET Power Switches.
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- Mathematics (2227-7390), 2023, v. 11, n. 1, p. 72, doi. 10.3390/math11010072
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- Article
Leakage Current Conduction Mechanism of Au-Pt-Ti/ HfO2-Al2O3/n-InAlAs Metal-Oxide-Semiconductor Capacitor under Reverse-Biased Condition.
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- Coatings (2079-6412), 2019, v. 9, n. 11, p. 720, doi. 10.3390/coatings9110720
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- Article
Study on the Physical and Leakage Current Characteristics of an Optimized High-k/InAlAs MOS Capacitor with a HfO2–Al2O3 Laminated Dielectric.
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- Coatings (2079-6412), 2018, v. 8, n. 12, p. 417, doi. 10.3390/coatings8120417
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- Article
A SYSTEMATIC STUDY ON THE DIELECTRIC RELAXATION, ELECTRIC MODULUS AND ELECTRICAL CONDUCTIVITY OF Al/Cu:TiO2∕n-Si (MOS) STRUCTURES/CAPACITORS.
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- Surface Review & Letters, 2020, v. 27, n. 10, p. N.PAG, doi. 10.1142/S0218625X19502172
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- Article
THE CURRENT–VOLTAGE CHARACTERISTICS OVER THE MEASUREMENT TEMPERATURE OF 60–400 K IN THE Au/Ti/n-GaAs CONTACTS WITH HIGH DIELECTRIC HfO<sub>2</sub> INTERFACIAL LAYER.
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- Surface Review & Letters, 2019, v. 26, n. 8, p. N.PAG, doi. 10.1142/S0218625X19500458
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- Article
Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements.
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- Gazi University Journal of Science, 2014, v. 27, n. 3, p. 909
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- Article
Perspective on advanced nanomaterials used for energy storage and conversion.
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- Pure & Applied Chemistry, 2022, v. 94, n. 8, p. 959, doi. 10.1515/pac-2021-0802
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- Article
65-nm CMOS 공정을 이용한 MOM 캐패시터 설계 및 분석.
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- Journal of Korean Institute of Electromagnetic Engineering & Science / Han-Guk Jeonjapa Hakoe Nonmunji, 2019, v. 30, n. 10, p. 846, doi. 10.5515/KJKIEES.2019.30.10.846
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- Article
MOS 커패시터 중화기법을 이용한 W-Band 고 이득 저잡음 증폭기 설계.
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- Journal of Korean Institute of Electromagnetic Engineering & Science / Han-Guk Jeonjapa Hakoe Nonmunji, 2019, v. 30, n. 9, p. 712, doi. 10.5515/KJKIEES.2019.30.9.712
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- Article
Silicon Mode-Selective Switch via Horizontal Metal-Oxide-Semiconductor Capacitor Incorporated With ENZ-ITO.
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- Scientific Reports, 2019, v. 9, n. 1, p. 1, doi. 10.1038/s41598-019-54332-6
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- Article
ENERGY DISTRIBUTION OF INTERFACE STATE DENSITY IN Si BAND GAP OF HAFNIUM SILICATE BASED MOS CAPACITORS.
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- Journal of Applied Science & Technology, 2014, v. 19, n. 1/2, p. 31
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- Publication type:
- Article
Improvement in the breakdown endurance of high- κ dielectric by utilizing stacking technology and adding sufficient interfacial layer.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-464
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- Article
Using Off-Chip Circuits Components to Maximize GaN Performance & Reduce Cost.
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- Microwave Journal, 2021, v. 64, n. 10, p. 22
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- Article
The Second Generation of Layout Styles to Further Boost the Electrical Performance of Analog MOSFETs.
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- Journal of Integrated Circuits & Systems, 2022, v. 17, n. 2, p. 1, doi. 10.29292/jics.v17i2.586
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- Article
Dynamic Crosstalk Analysis in Coupled Interconnects for Ultra-Low Power Applications.
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- Circuits, Systems & Signal Processing, 2015, v. 34, n. 1, p. 21, doi. 10.1007/s00034-014-9853-y
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- Article
Physical Mechanisms behind the Field-Cycling Behavior of HfO<sub>2</sub>-Based Ferroelectric Capacitors.
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- Advanced Functional Materials, 2016, v. 26, n. 25, p. 4601, doi. 10.1002/adfm.201600590
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- Publication type:
- Article
Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Pulsed Current-Voltage Characterization Technique: Design and Discussion.
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- Instruments & Experimental Techniques, 2023, v. 66, n. 6, p. 1085, doi. 10.1134/S0020441223050330
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- Article
20.2L: Late-News Paper: A 4-inch QVGA Flexible AMOLED Driven by Solution-Processed Metal Oxide TFTs.
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- SID Symposium Digest of Technical Papers, 2014, v. 45, n. 1, p. 252, doi. 10.1002/j.2168-0159.2014.tb00069.x
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- Article
Photo-Sensor Thin Film Transistor based on Double Metal-Oxide Layer for In-cell Remote Touch Screen.
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- SID Symposium Digest of Technical Papers, 2012, v. 43, n. 1, p. 334, doi. 10.1002/j.2168-0159.2012.tb05783.x
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- Article
A super class-AB adaptive biasing amplifier in 65-nm CMOS technology.
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- International Journal of Electronics Letters, 2018, v. 6, n. 3, p. 302, doi. 10.1080/21681724.2017.1376710
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- Article
Synaptic Plasticity Modulation of Neuromorphic Transistors through Phosphorus Concentration in Phosphosilicate Glass Electrolyte Gate.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 2, p. 203, doi. 10.3390/nano14020203
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- Publication type:
- Article
Enhanced Performance of GaAs Metal-Oxide-Semiconductor Capacitors Using a TaON/GeON Dual Interlayer.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 19, p. 2673, doi. 10.3390/nano13192673
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- Article
Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlO x /TiO y Nanolaminates.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 7, p. 1256, doi. 10.3390/nano13071256
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- Article
Editorial for the Special Issue "Nanoscale Ferroic Materials—Ferroelectric, Piezoelectric, Magnetic, and Multiferroic Materials".
- Published in:
- Nanomaterials (2079-4991), 2022, v. 12, n. 17, p. 2951, doi. 10.3390/nano12172951
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- Publication type:
- Article
Interface Optimization and Transport Modulation of Sm 2 O 3 /InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 12, p. 3443, doi. 10.3390/nano11123443
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- Article
Binder-Free Nickel Oxide Lamellar Layer Anchored CoOx Nanoparticles on Nickel Foam for Supercapacitor Electrodes.
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- Nanomaterials (2079-4991), 2020, v. 10, n. 2, p. 194, doi. 10.3390/nano10020194
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- Article
Electrical Properties and Interfacial Issues of HfO2/Ge MIS Capacitors Characterized by the Thickness of La2O3 Interlayer.
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- 2019
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- Publication type:
- Letter
A 90‐ to 115‐GHz superheterodyne receiver front‐end for W‐band imaging system in 28‐nm complementary metal‐oxide‐semiconductor.
- Published in:
- International Journal of Circuit Theory & Applications, 2023, v. 51, n. 4, p. 1530, doi. 10.1002/cta.3509
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- Publication type:
- Article
Wideband third‐order single‐transistor all‐pass filter.
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- International Journal of Circuit Theory & Applications, 2020, v. 48, n. 7, p. 1201, doi. 10.1002/cta.2786
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- Publication type:
- Article
A new fast-response buck converter using accelerated pulse-width-modulation techniques.
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- International Journal of Circuit Theory & Applications, 2013, v. 41, n. 8, p. 854, doi. 10.1002/cta.823
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- Publication type:
- Article
Electrically Active Defects in SiC Power MOSFETs.
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- Energies (19961073), 2023, v. 16, n. 4, p. 1771, doi. 10.3390/en16041771
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- Publication type:
- Article
Fabrication of Silicon Nanowire Metal-Oxide-Semiconductor Capacitors with Al 2 O 3 /TiO 2 /Al 2 O 3 Stacked Dielectric Films for the Application to Energy Storage Devices.
- Published in:
- Energies (19961073), 2021, v. 14, n. 15, p. 4538, doi. 10.3390/en14154538
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- Article
Optoelectronic Transimpedance Converter Based on MOS Photovaricap for High Resistive Gas Sensors.
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- Armenian Journal of Physics, 2023, v. 16, n. 4, p. 119, doi. 10.54503/18291171-2023.16.4-119
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- Publication type:
- Article
Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure.
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- PLoS ONE, 2016, v. 11, n. 8, p. 1, doi. 10.1371/journal.pone.0161736
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- Article
Dispersive Transport of Hydrogen in MOS Structures after Exposure to Ionizing Radiation.
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- Semiconductors, 2020, v. 54, n. 10, p. 1215, doi. 10.1134/S1063782620100036
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- Article
The effect of post-deposition annealing on the chemical, structural and electrical properties of Al/ZrO<sub>2</sub>/La<sub>2</sub>O<sub>3</sub>/ZrO<sub>2</sub>/Al high-k nanolaminated MIM capacitors.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 14, p. 11227, doi. 10.1007/s10854-022-08097-w
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- Publication type:
- Article
Correction to: Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si<sub>3</sub>N<sub>4</sub>/p-GaAs (MOS) capacitor.
- Published in:
- 2021
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- Publication type:
- Correction Notice
The current–voltage characteristics of V<sub>2</sub>O<sub>5</sub>/n-Si Schottky diodes formed with different metals.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 15, p. 20284, doi. 10.1007/s10854-021-06534-w
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- Publication type:
- Article
Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 9, p. 11418, doi. 10.1007/s10854-021-05349-z
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- Publication type:
- Article
Effects of the oxide/interface traps on the electrical characteristics in Al/Yb2O3/SiO2/n-Si/Al MOS capacitors.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 7, p. 9231, doi. 10.1007/s10854-021-05588-0
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- Publication type:
- Article
Selective photosensitivity of metal–oxide–semiconductor structures with SiOx layer annealed at high temperature.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 20, p. 17412, doi. 10.1007/s10854-020-04297-4
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- Publication type:
- Article