Works matching DE "METAL oxide semiconductor capacitors"

Results: 151

Advances in ZrO2 gate dielectrics: materials, optimization strategies, and electronic applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2025, v. 36, n. 20, p. 1, doi. 10.1007/s10854-025-15228-6

By:

Sazalli, Nurliyana Abu Hasan;
Kee, Chia Ching;
Osman, Siti Hasanah;
Goh, Boon Tong;
Ahmad, Roslina;
Jiwanti, Prastika Krisma;
Wong, Yew Hoong

Publication type:

Article

Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 25, p. 4601, doi. 10.1002/adfm.201600590

By:

Pešić, Milan;
Fengler, Franz Paul Gustav;
Larcher, Luca;
Padovani, Andrea;
Schenk, Tony;
Grimley, Everett D.;
Sang, Xiahan;
LeBeau, James M.;
Slesazeck, Stefan;
Schroeder, Uwe;
Mikolajick, Thomas

Publication type:

Article

A Novel ON-State Resistance Modeling Technique for MOSFET Power Switches.

Published in:

Mathematics (2227-7390), 2023, v. 11, n. 1, p. 72, doi. 10.3390/math11010072

By:

Guran, Ionuț-Constantin;
Florescu, Adriana;
Perișoară, Lucian Andrei

Publication type:

Article

Brief Comparison of High-Side Gate Drivers for Series Capacitor Buck Converters.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 17, p. 3701, doi. 10.3390/electronics12173701

By:

Abramovitz, Alexander;
Tali, Ran;
Tayar, Tal;
Shmilovitz, Doron

Publication type:

Article

Performance Investigation of Power Inverter Components Submersed in Subcooled Liquid Nitrogen for Electric Aircraft.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 5, p. 826, doi. 10.3390/electronics11050826

By:

Hassan, M. S.;
Asano, Tanemasa;
Shoyama, Masahito;
Dousoky, Gamal M.

Publication type:

Article

Processing–Structure–Performance Relationship in Organic Transistors: Experiments and Model.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 2, p. 197, doi. 10.3390/electronics11020197

By:

Liguori, Rosalba;
Facchetti, Antonio;
Licciardo, Gian Domenico;
Di Benedetto, Luigi

Publication type:

Article

Impact of Rapid-Thermal-Annealing Temperature on the Polarization Characteristics of a PZT-Based Ferroelectric Capacitor.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 11, p. 1324, doi. 10.3390/electronics10111324

By:

Yu, Hanyeong;
Shin, Changhwan

Publication type:

Article

Positive-to-negative subthreshold swing of a MOSFET tuned by the ferroelectric switching dynamics of BiFeO3.

Published in:

NPG Asia Materials, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41427-021-00345-5

By:

Liu, Chuanchuan;
Wang, Yuchen;
Sun, Haoyang;
Ma, Chao;
Luo, Zhen;
Wang, He;
Yin, Yuewei;
Li, Xiaoguang

Publication type:

Article

Suppression of Oxide and Interface Charge Density in Radio Frequency Sputtered Ta2O5 Thin Films.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 2, p. 1, doi. 10.1002/pssa.202300292

By:

Sahoo, Kiran K.;
Pradhan, Diana;
Gartia, Anurag;
Ghosh, Surya P.;
Kar, Jyoti P.

Publication type:

Article

Effect of Heat Treatment on Zirconium Oxide High‐k Gate Dielectric in Silicon‐Based Metal Oxide Semiconductor Capacitors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 9, p. 1, doi. 10.1002/pssa.202200903

By:

Cai, Haotian;
Tuokedaerhan, Kamale;
Lu, Zhenchuan;
Du, Hongguo;
Zhang, Renjia

Publication type:

Article

Yb/Se/WO3/Yb Thin Film Transistors as Rectifiers, N‐Channel Metal Oxide Semiconductor Capacitors, Laser Sensors, and Microwave Bandstop Filters.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 18, p. 1, doi. 10.1002/pssa.202100822

By:

Qasrawi, Atef Fayez;
Daragme, Rana B.

Publication type:

Article

On-Fabrication Solid-State N-Doping of Graphene by an Electron-Transporting Metal Oxide Layer for Efficient Inverted Organic Solar Cells.

Published in:

Advanced Energy Materials, 2016, v. 6, n. 12, p. n/a, doi. 10.1002/aenm.201600172

By:

Kim, Hobeom;
Byun, Jinwoo;
Bae, Sang‐Hoon;
Ahmed, Towfiq;
Zhu, Jian‐Xin;
Kwon, Sung‐Joo;
Lee, Yeongjun;
Min, Sung‐Yong;
Wolf, Christoph;
Seo, Hong‐Kyu;
Ahn, Jong‐Hyun;
Lee, Tae‐Woo

Publication type:

Article

Multifunctional Coatings from Scalable Single Source Precursor Chemistry in Tandem Photoelectrochemical Water Splitting.

Published in:

Advanced Energy Materials, 2015, v. 5, n. 24, p. n/a, doi. 10.1002/aenm.201501668

By:

Lai, Yi‐Hsuan;
Palm, David W.;
Reisner, Erwin

Publication type:

Article

Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements.

Published in:

Gazi University Journal of Science, 2014, v. 27, n. 3, p. 909

By:

TATAROGĞLU, A.;
GÜVEN, G. G.;
YILMAZ, S.;
BÜYÜKBAŞ, A.

Publication type:

Article

Morphological, Optical, and Electrical Properties of a MOS Capacitor Based on Rare Earth Oxide and p-Porous GaAs.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 10, p. 6412, doi. 10.1007/s11664-024-11309-0

By:

Saghrouni, Hayet;
Beji, Lotfi

Publication type:

Article

Study of p-GaN Gate MOS-HEMT with Al2O3 Insulator for High-Power Applications.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 4, p. 2865, doi. 10.1007/s11664-023-10252-w

By:

Huang, Kuan Ning;
Lin, Yueh Chin;
Wu, Chieh Ying;
Lee, Jin Hwa;
Hsu, Chia Chieh;
Yao, Jing Neng;
Chien, Chao Hsin;
Chang, Edward Yi

Publication type:

Article

A Superjunction Insulated Gate Bipolar Transistor with Embedded Self-biased N-Type Metal–Oxide–Semiconductor Field-Effect Transistor.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 3, p. 2177, doi. 10.1007/s11664-022-10148-1

By:

Wu, Lijuan;
Zhang, Banghui;
Deng, Gaoqiang;
Song, Xuanting;
Liu, Heng;
Liu, Qing;
Qiu, Tao

Publication type:

Article

Solution-Processed HfO2/Y2O3 Multilayer Si-Based MOS Capacitors Photoactivated by Deep-Ultraviolet Radiation.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 9, p. 4944, doi. 10.1007/s11664-022-09738-w

By:

Almaimouni, Ashwag;
Kutbee, Arwa;
Mudhaffar, Asmaa;
Al-Jawhari, Hala

Publication type:

Article

Electrical and Dielectric Properties of a Dy2O3 MOS Capacitor.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 3, p. 1250, doi. 10.1007/s11664-021-09391-9

By:

Saghrouni, H.;
Cherif, A.;
Beji, L.

Publication type:

Article

Electrical Properties of 6 nm to 19 nm Thick Polyethylene Oxide Capacitors for Ion/Electron Functional Devices.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 6, p. 2956, doi. 10.1007/s11664-020-08716-4

By:

Gonzalez-Serrano, Karla Adriana;
Seabaugh, Alan C.

Publication type:

Article

Promoting Surface Electric Conductivity for High‐Rate LiCoO2.

Published in:

Angewandte Chemie, 2023, v. 135, n. 10, p. 1, doi. 10.1002/ange.202218595

By:

Xu, Shenyang;
Tan, Xinghua;
Ding, Wangyang;
Ren, Wenju;
Zhao, Qi;
Huang, Weiyuan;
Liu, Jiajie;
Qi, Rui;
Zhang, Yongxin;
Yang, Jiachao;
Zuo, Changjian;
Ji, Haocheng;
Ren, Hengyu;
Cao, Bo;
Xue, Haoyu;
Gao, Zhihai;
Yi, Haocong;
Zhao, Wenguang;
Xiao, Yinguo;
Zhao, Qinghe

Publication type:

Article

High-quality spin-on glass-based oxide as a matrix for embedding HfO nanoparticles for metal-oxide-semiconductor capacitors.

Published in:

Journal of Materials Science, 2012, v. 47, n. 5, p. 2248, doi. 10.1007/s10853-011-6036-0

By:

Molina, Joel;
Munoz, Ana;
Calleja, Wilfrido;
Rosales, Pedro;
Torres, Alfonso

Publication type:

Article

Sol-Gel Synthesis of Carbon-Coated LaCoO3 for Effective Electrocatalytic Oxidation of Salicylic Acid.

Published in:

ChemElectroChem, 2017, v. 4, n. 4, p. 935, doi. 10.1002/celc.201600714

By:

Sivakumar, Mani;
Sakthivel, Mani;
Chen, Shen‐Ming;
Veerakumar, Pitchaimani;
Liu, Shang‐Bin

Publication type:

Article

Ultrafine Fe3O4 Quantum Dots on Hybrid Carbon Nanosheets for Long-Life, High-Rate Alkali-Metal Storage.

Published in:

ChemElectroChem, 2016, v. 3, n. 1, p. 38, doi. 10.1002/celc.201500410

By:

Liu, Shaohong;
Wang, Yuwei;
Dong, Yanfeng;
Zhao, Zongbin;
Wang, Zhiyu;
Qiu, Jieshan

Publication type:

Article

Influence of Hydrogen-Nitrogen Hybrid Passivation on the Gate Oxide Film of n-Type 4H-SiC MOS Capacitors.

Published in:

Coatings (2079-6412), 2021, v. 11, n. 12, p. 1449, doi. 10.3390/coatings11121449

By:

Jia, Yifan;
Sun, Shengjun;
Liu, Xiangtai;
Lu, Qin;
Qin, Ke;
Wang, Shaoqing;
Guan, Yunhe;
Chen, Haifeng;
Tang, Xiaoyan;
Zhang, Yuming

Publication type:

Article

Leakage Current Conduction Mechanism of Au-Pt-Ti/ HfO2-Al2O3/n-InAlAs Metal-Oxide-Semiconductor Capacitor under Reverse-Biased Condition.

Published in:

Coatings (2079-6412), 2019, v. 9, n. 11, p. 720, doi. 10.3390/coatings9110720

By:

Guan, He;
Wang, Shaoxi

Publication type:

Article

Study on the Physical and Leakage Current Characteristics of an Optimized High-k/InAlAs MOS Capacitor with a HfO2–Al2O3 Laminated Dielectric.

Published in:

Coatings (2079-6412), 2018, v. 8, n. 12, p. 417, doi. 10.3390/coatings8120417

By:

Guan, He;
Jiang, Chengyu

Publication type:

Article

A SYSTEMATIC STUDY ON THE DIELECTRIC RELAXATION, ELECTRIC MODULUS AND ELECTRICAL CONDUCTIVITY OF Al/Cu:TiO2∕n-Si (MOS) STRUCTURES/CAPACITORS.

Published in:

Surface Review & Letters, 2020, v. 27, n. 10, p. N.PAG, doi. 10.1142/S0218625X19502172

By:

YILDIRIM, M.;
KOCYIGIT, A.

Publication type:

Article

THE CURRENT–VOLTAGE CHARACTERISTICS OVER THE MEASUREMENT TEMPERATURE OF 60–400 K IN THE Au/Ti/n-GaAs CONTACTS WITH HIGH DIELECTRIC HfO2 INTERFACIAL LAYER.

Published in:

Surface Review & Letters, 2019, v. 26, n. 8, p. N.PAG, doi. 10.1142/S0218625X19500458

By:

KARABULUT, ABDULKERIM;
ORAK, IKRAM;
CAGLAR, MUJDAT;
TURUT, ABDULMECIT

Publication type:

Article

Characterization and Electrical Response to Humidity of Sintered Polymeric Electrospun Fibers of Vanadium Oxide-(TiO2/WO3).

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 5, p. 2710, doi. 10.1007/s11664-018-6112-1

By:

Araújo, E. S.;
Libardi, J.;
Faia, P. M.;
de Oliveira, H. P.

Publication type:

Article

An Investigation of Quantum Dot Super Lattice Use in Nonvolatile Memory and Transistors.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 2, p. 1371, doi. 10.1007/s11664-017-5951-5

By:

Mirdha, P.;
Parthasarathy, B.;
Kondo, J.;
Chan, P.-Y.;
Heller, E.;
Jain, F.

Publication type:

Article

Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 4, p. 2296, doi. 10.1007/s11664-016-5262-2

By:

Jiao, C.;
Ahyi, A.;
Dhar, S.;
Morisette, D.;
Myers-Ward, R.

Publication type:

Article

Effect of Remote Oxygen Scavenging on Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitors.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 1, p. 386, doi. 10.1007/s11664-016-4841-6

By:

Fadida, Sivan;
Nyns, Laura;
Elshocht, Sven;
Eizenberg, Moshe

Publication type:

Article

Study of Hf-Ti-O Thin Film as High- k Gate Dielectric and Application for ETSOI MOSFETs.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 8, p. 4407, doi. 10.1007/s11664-016-4601-7

By:

Chen, Xiaoqiang;
Zhao, Hongbin;
Xiong, Yuhua;
Wei, Feng;
Du, Jun;
Tang, Zhaoyun;
Tang, Bo;
Yan, Jiang

Publication type:

Article

Impact of AlN Spacer on Analog Performance of Lattice-Matched AlInN/AlN/GaN MOSHEMT.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2172, doi. 10.1007/s11664-015-4296-1

By:

Jena, Kanjalochan;
Swain, Raghunandan;
Lenka, T.

Publication type:

Article

Study of Shallow Backside Junctions for Backside Illumination of CMOS Image Sensors.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 11, p. 3933, doi. 10.1007/s11664-014-3336-6

By:

Choi, Chung;
Yeo, Sang;
Kim, Dohwan;
Kim, Jongchae;
Yoo, Kyung;
Lee, Hyuck

Publication type:

Article

Effects of HO Pretreatment on the Capacitance-Voltage Characteristics of Atomic-Layer-Deposited AlO on Ga-Face GaN Metal-Oxide-Semiconductor Capacitors.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 33, doi. 10.1007/s11664-012-2246-8

By:

Liu, Xiang;
Yeluri, Ramya;
Lu, Jing;
Mishra, Umesh

Publication type:

Article

The effect of post-deposition annealing on the chemical, structural and electrical properties of Al/ZrO2/La2O3/ZrO2/Al high-k nanolaminated MIM capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 14, p. 11227, doi. 10.1007/s10854-022-08097-w

By:

Patil, Sumit R.;
Barhate, Viral N.;
Patil, Vilas S.;
Agrawal, Khushabu S.;
Mahajan, Ashok M.

Publication type:

Article

Correction to: Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor.

Published in:

2021

By:

Türkay, Sema;
Tataroğlu, Adem

Publication type:

Correction Notice

The current–voltage characteristics of V2O5/n-Si Schottky diodes formed with different metals.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 15, p. 20284, doi. 10.1007/s10854-021-06534-w

By:

Kaya, Meltem Donmez;
Sertel, Buse Comert;
Sonmez, Nihan Akin;
Cakmak, Mehmet;
Ozcelik, Suleyman

Publication type:

Article

Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 9, p. 11418, doi. 10.1007/s10854-021-05349-z

By:

Türkay, Sema;
Tataroğlu, Adem

Publication type:

Article

Effects of the oxide/interface traps on the electrical characteristics in Al/Yb2O3/SiO2/n-Si/Al MOS capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 7, p. 9231, doi. 10.1007/s10854-021-05588-0

By:

Morkoç, Berk;
Kahraman, Ayşegül;
Yılmaz, Ercan

Publication type:

Article

Selective photosensitivity of metal–oxide–semiconductor structures with SiOx layer annealed at high temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 20, p. 17412, doi. 10.1007/s10854-020-04297-4

By:

Paz, J.;
Nedev, N.;
Nesheva, D.;
Curiel, M.;
Manolov, E.;
Valdez, B.;
Perez, O.;
Mateos, D.;
Nedev, R.;
Arias, A.;
Ramirez, M.;
Dzhurkov, V.

Publication type:

Article

Impact of SiO2 interfacial layer on the electrical characteristics of Al/Al2O3/SiO2/n-Si metal–oxide–semiconductor capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 15, p. 12372, doi. 10.1007/s10854-020-03783-z

By:

Kimbugwe, Nakibinge Tawfiq;
Yilmaz, Ercan

Publication type:

Article

Influence of finite size and surface effects on the structural, electrical and magnetic properties of nanostructured nickel oxide.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 7, p. 5769, doi. 10.1007/s10854-020-03147-7

By:

Sheena, P. A.;
Hitha, H.;
Sreedevi, A.;
Varghese, Thomas

Publication type:

Article

Solid state thermal decomposition synthesis of CuO nanoparticles from coordinated pyrazolopyridine as novel precursors.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 3, p. 2923, doi. 10.1007/s10854-016-5877-3

By:

Abdel-Monem, Yasser;
Emam, Sanaa;
Okda, Hager

Publication type:

Article

Effect of zero bias Gamma ray irradiation on HfO thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 12796, doi. 10.1007/s10854-016-5412-6

By:

Maurya, Savita

Publication type:

Article

A detailed study on the frequency-dependent electrical characteristics of Al/HfSiO/p-Si MOS capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 13154, doi. 10.1007/s10854-016-5461-x

By:

Lok, R.;
Kaya, S.;
Karacali, H.;
Yilmaz, E.

Publication type:

Article

Inductive type properties of FeCoZr-CaF and FeCoZr-PZT nanocomposites.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 9, p. 6450, doi. 10.1007/s10854-015-3236-4

By:

Koltunowicz, Tomasz

Publication type:

Article

Stability of TaRh as a potential diffusion barrier for Cu metallization: capacitance-voltage tests after bias temperature stress.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 2, p. 897, doi. 10.1007/s10854-013-1662-8

By:

Dalili, Neda;
Ivey, Douglas

Publication type:

Article