Works matching DE "METAL oxide semiconductor capacitors"

Results: 150

Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 25, p. 4601, doi. 10.1002/adfm.201600590

By:

Pešić, Milan;
Fengler, Franz Paul Gustav;
Larcher, Luca;
Padovani, Andrea;
Schenk, Tony;
Grimley, Everett D.;
Sang, Xiahan;
LeBeau, James M.;
Slesazeck, Stefan;
Schroeder, Uwe;
Mikolajick, Thomas

Publication type:

Article

The effect of post-deposition annealing on the chemical, structural and electrical properties of Al/ZrO2/La2O3/ZrO2/Al high-k nanolaminated MIM capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 14, p. 11227, doi. 10.1007/s10854-022-08097-w

By:

Patil, Sumit R.;
Barhate, Viral N.;
Patil, Vilas S.;
Agrawal, Khushabu S.;
Mahajan, Ashok M.

Publication type:

Article

Correction to: Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor.

Published in:

2021

By:

Türkay, Sema;
Tataroğlu, Adem

Publication type:

Correction Notice

The current–voltage characteristics of V2O5/n-Si Schottky diodes formed with different metals.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 15, p. 20284, doi. 10.1007/s10854-021-06534-w

By:

Kaya, Meltem Donmez;
Sertel, Buse Comert;
Sonmez, Nihan Akin;
Cakmak, Mehmet;
Ozcelik, Suleyman

Publication type:

Article

Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 9, p. 11418, doi. 10.1007/s10854-021-05349-z

By:

Türkay, Sema;
Tataroğlu, Adem

Publication type:

Article

Effects of the oxide/interface traps on the electrical characteristics in Al/Yb2O3/SiO2/n-Si/Al MOS capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 7, p. 9231, doi. 10.1007/s10854-021-05588-0

By:

Morkoç, Berk;
Kahraman, Ayşegül;
Yılmaz, Ercan

Publication type:

Article

Selective photosensitivity of metal–oxide–semiconductor structures with SiOx layer annealed at high temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 20, p. 17412, doi. 10.1007/s10854-020-04297-4

By:

Paz, J.;
Nedev, N.;
Nesheva, D.;
Curiel, M.;
Manolov, E.;
Valdez, B.;
Perez, O.;
Mateos, D.;
Nedev, R.;
Arias, A.;
Ramirez, M.;
Dzhurkov, V.

Publication type:

Article

Impact of SiO2 interfacial layer on the electrical characteristics of Al/Al2O3/SiO2/n-Si metal–oxide–semiconductor capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 15, p. 12372, doi. 10.1007/s10854-020-03783-z

By:

Kimbugwe, Nakibinge Tawfiq;
Yilmaz, Ercan

Publication type:

Article

Influence of finite size and surface effects on the structural, electrical and magnetic properties of nanostructured nickel oxide.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 7, p. 5769, doi. 10.1007/s10854-020-03147-7

By:

Sheena, P. A.;
Hitha, H.;
Sreedevi, A.;
Varghese, Thomas

Publication type:

Article

Solid state thermal decomposition synthesis of CuO nanoparticles from coordinated pyrazolopyridine as novel precursors.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 3, p. 2923, doi. 10.1007/s10854-016-5877-3

By:

Abdel-Monem, Yasser;
Emam, Sanaa;
Okda, Hager

Publication type:

Article

Effect of zero bias Gamma ray irradiation on HfO thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 12796, doi. 10.1007/s10854-016-5412-6

By:

Maurya, Savita

Publication type:

Article

A detailed study on the frequency-dependent electrical characteristics of Al/HfSiO/p-Si MOS capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 13154, doi. 10.1007/s10854-016-5461-x

By:

Lok, R.;
Kaya, S.;
Karacali, H.;
Yilmaz, E.

Publication type:

Article

Inductive type properties of FeCoZr-CaF and FeCoZr-PZT nanocomposites.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 9, p. 6450, doi. 10.1007/s10854-015-3236-4

By:

Koltunowicz, Tomasz

Publication type:

Article

Stability of TaRh as a potential diffusion barrier for Cu metallization: capacitance-voltage tests after bias temperature stress.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 2, p. 897, doi. 10.1007/s10854-013-1662-8

By:

Dalili, Neda;
Ivey, Douglas

Publication type:

Article

IMPACTS OF METAL AND METAL OXIDE NANOPARTICLES ON REPRODUCTIVE TISSUES AND SPERMATOGENESIS IN MAMMALS.

Published in:

Journal of Experimental Zoology India, 2018, v. 21, n. 2, p. 593

By:

Lahir, Y. K.

Publication type:

Article

Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor.

Published in:

International Journal of Energy Research, 2021, v. 45, n. 10, p. 14761, doi. 10.1002/er.6752

By:

Onik, Tahsin Ahmed Mozaffor;
Hawari, Huzein Fahmi;
Sabri, Mohd Faizul Mohd;
Wong, Yew Hoong

Publication type:

Article

Comparative study of oxidizing ambient infused with varying nitrogen flow rates for fabrication of ternary nitrided AlZrO based MOS capacitor.

Published in:

International Journal of Energy Research, 2021, v. 45, n. 3, p. 3838, doi. 10.1002/er.6037

By:

Quah, Hock Jin;
Hassan, Zainuriah;
Lim, Way Foong

Publication type:

Article

Nitrogen Plasma Etching and Surface Passivation of GaAs via Plasma-Enhanced Atomic Layer Deposition.

Published in:

Integrated Ferroelectrics, 2021, v. 219, n. 1, p. 55, doi. 10.1080/10584587.2021.1911353

By:

Fang, Dan;
Chen, Fang;
Fang, Xuan;
Zhang, Haixi;
Li, Jinhua;
Wang, Xiaohua;
Ma, Xiaohui;
Wei, Zhipeng

Publication type:

Article

Nitrogen Plasma Etching and Surface Passivation of GaAs via Plasma-Enhanced Atomic Layer Deposition.

Published in:

Integrated Ferroelectrics, 2021, v. 219, n. 1, p. 55, doi. 10.1080/10584587.2021.1911353

By:

Fang, Dan;
Chen, Fang;
Fang, Xuan;
Zhang, Haixi;
Li, Jinhua;
Wang, Xiaohua;
Ma, Xiaohui;
Wei, Zhipeng

Publication type:

Article

Temperature-Dependent Tunneling Current in NiSi 2 Nanocrystals Embedded in Metal-Oxide-Semiconductor Structure.

Published in:

Integrated Ferroelectrics, 2013, v. 143, n. 1, p. 24, doi. 10.1080/10584587.2013.795834

By:

Tsai, Jenn-Kai;
Yeh, Bin-Hong;
Meen, Teen-Hang;
Wu, Tian-Chiuan

Publication type:

Article

A 90‐ to 115‐GHz superheterodyne receiver front‐end for W‐band imaging system in 28‐nm complementary metal‐oxide‐semiconductor.

Published in:

International Journal of Circuit Theory & Applications, 2023, v. 51, n. 4, p. 1530, doi. 10.1002/cta.3509

By:

Wang, Xi;
Wei, Dong;
Zhang, Zhiyang;
Wu, Tianxiang;
Chen, Xu;
Chen, Yong;
Ren, Junyan;
Ma, Shunli

Publication type:

Article

Wideband third‐order single‐transistor all‐pass filter.

Published in:

International Journal of Circuit Theory & Applications, 2020, v. 48, n. 7, p. 1201, doi. 10.1002/cta.2786

By:

Elamien, Mohamed B.;
Maundy, Brent J.;
Belostotski, Leonid;
Elwakil, Ahmed S.

Publication type:

Article

A new fast-response buck converter using accelerated pulse-width-modulation techniques.

Published in:

International Journal of Circuit Theory & Applications, 2013, v. 41, n. 8, p. 854, doi. 10.1002/cta.823

By:

Chen, Jiann‐Jong;
Hwang, Bo‐Han;
Jhang, Yan‐Chong;
Hwang, Yuh‐Shyan;
Yu, Cheng‐Chieh

Publication type:

Article

High-k Gate Dielectrics of Thin Films with its Technological Applications - A Review.

Published in:: International Journal of Pure & Applied Sciences & Technology, 2011, v. 4, n. 2, p. 105
Publication type:: Article

Optoelectronic Transimpedance Converter Based on MOS Photovaricap for High Resistive Gas Sensors.

Published in:

Armenian Journal of Physics, 2023, v. 16, n. 4, p. 119, doi. 10.54503/18291171-2023.16.4-119

By:

Semerjyan, B. O.;
Kananov, D. A.;
Alexanyan, M. S.

Publication type:

Article

The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection.

Published in:

Advances in Condensed Matter Physics, 2018, p. 1, doi. 10.1155/2018/5483756

By:

Shen, Jingyu;
Tan, Can;
Jiang, Rui;
Li, Wei;
Fan, Xue;
Li, Jianjun;
Wu, Jingping

Publication type:

Article

Dynamic Crosstalk Analysis in Coupled Interconnects for Ultra-Low Power Applications.

Published in:

Circuits, Systems & Signal Processing, 2015, v. 34, n. 1, p. 21, doi. 10.1007/s00034-014-9853-y

By:

Dhiman, Rohit;
Chandel, Rajeevan

Publication type:

Article

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors.

Published in:

Molecules, 2022, v. 27, n. 12, p. 3951, doi. 10.3390/molecules27123951

By:

Xiong, Li;
Hu, Jin;
Yang, Zhao;
Li, Xianglin;
Zhang, Hang;
Zhang, Guanhua

Publication type:

Article

interview.

Published in:: 2018
Publication type:: Interview

Suppression of Oxide and Interface Charge Density in Radio Frequency Sputtered Ta2O5 Thin Films.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 2, p. 1, doi. 10.1002/pssa.202300292

By:

Sahoo, Kiran K.;
Pradhan, Diana;
Gartia, Anurag;
Ghosh, Surya P.;
Kar, Jyoti P.

Publication type:

Article

Effect of Heat Treatment on Zirconium Oxide High‐k Gate Dielectric in Silicon‐Based Metal Oxide Semiconductor Capacitors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 9, p. 1, doi. 10.1002/pssa.202200903

By:

Cai, Haotian;
Tuokedaerhan, Kamale;
Lu, Zhenchuan;
Du, Hongguo;
Zhang, Renjia

Publication type:

Article

Yb/Se/WO3/Yb Thin Film Transistors as Rectifiers, N‐Channel Metal Oxide Semiconductor Capacitors, Laser Sensors, and Microwave Bandstop Filters.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 18, p. 1, doi. 10.1002/pssa.202100822

By:

Qasrawi, Atef Fayez;
Daragme, Rana B.

Publication type:

Article

The Second Generation of Layout Styles to Further Boost the Electrical Performance of Analog MOSFETs.

Published in:

Journal of Integrated Circuits & Systems, 2022, v. 17, n. 2, p. 1, doi. 10.29292/jics.v17i2.586

By:

Augusto da Silva, Gabriel;
Pinillos Gimenez, Salvador

Publication type:

Article

Dispersive Transport of Hydrogen in MOS Structures after Exposure to Ionizing Radiation.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1215, doi. 10.1134/S1063782620100036

By:

Aleksandrov, O. V.

Publication type:

Article

Ultra‐Steep‐Slope and High‐Stability of CuInP2S6/WS2 Ferroelectric Negative Capacitor Transistors by Passivation Effect and Dual‐Gate Modulation.

Published in:

Advanced Functional Materials, 2023, v. 33, n. 44, p. 1, doi. 10.1002/adfm.202306708

By:

Zhao, Lei;
Liang, Yunshan;
Ma, Jingyi;
Pan, Zhidong;
Liu, Xueting;
Yang, Mengmeng;
Sun, Yiming;
Gao, Wei;
Li, Bo;
Li, Jingbo;
Huo, Nengjie

Publication type:

Article

Effect of zero bias, 2.7 MeV proton irradiation on HfO2.

Published in:

Journal of Radioanalytical & Nuclear Chemistry, 2018, v. 318, n. 2, p. 947, doi. 10.1007/s10967-018-6229-y

By:

Maurya, Savita;
Awasthi, Supriya

Publication type:

Article

Warpage Reduction for Power MOSFET Wafers.

Published in:

Electrica, 2021, v. 21, n. 2, p. 173, doi. 10.5152/electrica.2021.21019

By:

Kim Ho Yeap;
Nisar, Humaira;
Dakulagi, Veerendra

Publication type:

Article

Hole trapping capability of silicon carbonitride charge trap layers.

Published in:

European Physical Journal - Applied Physics, 2020, v. 90, n. 1, p. 1, doi. 10.1051/epjap/2020190297

By:

Kleider, Jean-Paul;
Johnson, Erik;
Brüggemann, Rudolf;
Kobayashi, Kiyoteru;
Mino, Hiroshi

Publication type:

Article

Charge transient behaviour and spectroscopic ellipsometry characteristics of TiN/HfSiO MOS capacitors.

Published in:

European Physical Journal - Applied Physics, 2018, v. 83, n. 1, p. N.PAG, doi. 10.1051/epjap/2018180104

By:

Khan, Zeeshan Najam;
Shuja, Ahmed;
Ali, Muhammad;
Alam, Shoaib

Publication type:

Article

Enhancement of Stability in n -Channel OFETs by Modulating Polymeric Dielectric.

Published in:

Polymers (20734360), 2023, v. 15, n. 11, p. 2421, doi. 10.3390/polym15112421

By:

Fang, Po-Hsiang;
Kuo, Peng-Lin;
Wang, Yu-Wu;
Cheng, Horng-Long;
Chou, Wei-Yang

Publication type:

Article

Electrically Active Defects in SiC Power MOSFETs.

Published in:

Energies (19961073), 2023, v. 16, n. 4, p. 1771, doi. 10.3390/en16041771

By:

Chaturvedi, Mayank;
Haasmann, Daniel;
Moghadam, Hamid Amini;
Dimitrijev, Sima

Publication type:

Article

Fabrication of Silicon Nanowire Metal-Oxide-Semiconductor Capacitors with Al 2 O 3 /TiO 2 /Al 2 O 3 Stacked Dielectric Films for the Application to Energy Storage Devices.

Published in:

Energies (19961073), 2021, v. 14, n. 15, p. 4538, doi. 10.3390/en14154538

By:

Nezasa, Ryota;
Gotoh, Kazuhiro;
Kato, Shinya;
Miyamoto, Satoru;
Usami, Noritaka;
Kurokawa, Yasuyoshi

Publication type:

Article

Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure.

Published in:

PLoS ONE, 2016, v. 11, n. 8, p. 1, doi. 10.1371/journal.pone.0161736

By:

Khan, Z. N.;
Ahmed, S.;
Ali, M.

Publication type:

Article

Improvement in the breakdown endurance of high- κ dielectric by utilizing stacking technology and adding sufficient interfacial layer.

Published in:

Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-464

By:

Pang, Chin-Sheng;
Hwu, Jenn-Gwo

Publication type:

Article

Self-Templated Formation of Uniform NiCo2O4 Hollow Spheres with Complex Interior Structures for Lithium-Ion Batteries and Supercapacitors.

Published in:

Angewandte Chemie International Edition, 2015, v. 54, n. 6, p. 1868, doi. 10.1002/anie.201409776

By:

Yu, Le;
Yu, Xin-Yao;
Lou, Xiong Wen (David);
Shen, Laifa;
Zhang, Xiaogang

Publication type:

Article

Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements.

Published in:

Gazi University Journal of Science, 2014, v. 27, n. 3, p. 909

By:

TATAROGĞLU, A.;
GÜVEN, G. G.;
YILMAZ, S.;
BÜYÜKBAŞ, A.

Publication type:

Article

Effect of passivation layers in bilayer with ZrO2 on Ge substrate for improved thermal stability.

Published in:

Journal of Materials Science, 2024, v. 59, n. 41, p. 19584, doi. 10.1007/s10853-024-10309-z

By:

Won, Byoungjun;
Oh, Geun-Ha;
Oh, Il-Kwon

Publication type:

Article

Performance Investigation of Power Inverter Components Submersed in Subcooled Liquid Nitrogen for Electric Aircraft.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 5, p. 826, doi. 10.3390/electronics11050826

By:

Hassan, M. S.;
Asano, Tanemasa;
Shoyama, Masahito;
Dousoky, Gamal M.

Publication type:

Article

Processing–Structure–Performance Relationship in Organic Transistors: Experiments and Model.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 2, p. 197, doi. 10.3390/electronics11020197

By:

Liguori, Rosalba;
Facchetti, Antonio;
Licciardo, Gian Domenico;
Di Benedetto, Luigi

Publication type:

Article

Impact of Rapid-Thermal-Annealing Temperature on the Polarization Characteristics of a PZT-Based Ferroelectric Capacitor.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 11, p. 1324, doi. 10.3390/electronics10111324

By:

Yu, Hanyeong;
Shin, Changhwan

Publication type:

Article