Works matching DE "METAL organic chemical vapor deposition"

Results: 881

Magnetic Properties of Co: TiO2 Thin Films with Low Cobalt Concentration.

Published in:

Pertanika Journal of Social Sciences & Humanities, 2017, v. 25S, p. 57

By:

Saripudin, Aip;
Purnama, Wawan;
Hakim, Dadang Lukman;
Somantri, Maman

Publication type:

Article

Photodetection and Thermistor Applications of Cu-Cd-S Thin Film.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 5, p. 4036, doi. 10.1007/s11664-025-11829-3

By:

Adebisi, Adebowale Clement;
Omotoso, Ezekiel;
Olorunkosebi, Allen Abiodun;
Eleruja, Marcus Adebola;
Olofinjana, Bolutife

Publication type:

Article

Influence of chemical doping on flux pinning of GdBa2Cu3O7-z films.

Published in:

Surface Engineering, 2018, v. 34, n. 9, p. 649, doi. 10.1080/02670844.2017.1312779

By:

Liu, L.;
Wang, W. T.;
Huo, B. L.;
Wang, M. J.;
Yu, Z.;
Yang, X.;
Zhang, Y.;
Cheng, C. H.;
Zhao, Y.

Publication type:

Article

MOCVD growth and study of magnetic Co films.

Published in:

Surface Engineering, 2016, v. 32, n. 1, p. 8, doi. 10.1179/1743294414Y.0000000424

By:

Dorovskikh, S. I.;
Hairullin, R. R.;
Sysoev, S. V.;
Kriventsov, V. V.;
Panin, A. V.;
Shubin, Y. V.;
Morozova, N. B.;
Gelfond, N. V.;
Korenev, S. V.

Publication type:

Article

Fabrication and Application of Smooth Composite Diamond Films.

Published in:

Surface Engineering, 2003, v. 19, n. 6, p. 461, doi. 10.1179/026708403225010145

By:

Sun, F. H.;
Zhang, Z. M.;
Shen, H. S.;
Chen, M.

Publication type:

Article

Control of Hydrogenation Patterning for CVD Diamond Substrates by AFM Local Anodic Oxidation.

Published in:

Surface Engineering, 2003, v. 19, n. 6, p. 441, doi. 10.1179/026708403225010091

By:

Manfredotti, C.;
Vittone, E.;
Paolini, C.;
Bianco, L.;
Fizzotti, F.;
Giudice, A. Lo;
Olivero, P.

Publication type:

Article

Fundamental Aspects and Applications of Low Field Electron Emission from Nanocarbons.

Published in:

Surface Engineering, 2003, v. 19, n. 6, p. 429, doi. 10.1179/026708403225010172

By:

Obraztsov, A. N.;
Volkov, A. P.;
Zakhidov, Al. A.;
Petrushenko, Yu. V.;
Satanovskaya, O. P.

Publication type:

Article

Morphological and Structural Evolutions of Metal-Organic Framework Particles from Amorphous Spheres to Crystalline Hexagonal Rods.

Published in:

Angewandte Chemie, 2015, v. 127, n. 36, p. 10710, doi. 10.1002/ange.201504873

By:

Lee, Hee Jung;
We, Junghun;
Kim, Jun Oh;
Kim, Dooyoung;
Cha, Wonhee;
Lee, Eunji;
Sohn, Jeungwon;
Oh, Moonhyun

Publication type:

Article

Superprotonic Conductivity of a UiO-66 Framework Functionalized with Sulfonic Acid Groups by Facile Postsynthetic Oxidation.

Published in:

Angewandte Chemie, 2015, v. 127, n. 17, p. 5231, doi. 10.1002/ange.201411703

By:

Phang, Won Ju;
Jo, Hyuna;
Lee, Woo Ram;
Song, Jeong Hwa;
Yoo, Kicheon;
Kim, BongSoo;
Hong, Chang Seop

Publication type:

Article

Highly Hydrophobic Isoreticular Porous Metal-Organic Frameworks for the Capture of Harmful Volatile Organic Compounds.

Published in:

Angewandte Chemie, 2013, v. 125, n. 32, p. 8448, doi. 10.1002/ange.201303484

By:

Padial, Natalia M.;
Quartapelle Procopio, Elsa;
Montoro, Carmen;
López, Elena;
Oltra, J. Enrique;
Colombo, Valentina;
Maspero, Angelo;
Masciocchi, Norberto;
Galli, Simona;
Senkovska, Irena;
Kaskel, Stefan;
Barea, Elisa;
Navarro, Jorge A. R.

Publication type:

Article

Improvement of GaInSb crystal quality by rotating magnetic field.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 16, p. 15654, doi. 10.1007/s10854-019-01947-0

By:

Wang, Ruqing;
Wang, Jinwei;
He, Guofang;
Yang, Donghai;
Zhang, Weicai;
Liu, Juncheng

Publication type:

Article

A detailed study on optical properties of InGaN/GaN/Al2O3 multi quantum wells.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 11, p. 10391, doi. 10.1007/s10854-019-01379-w

By:

Bilgili, Ahmet Kürşat;
Akpınar, Ömer;
Öztürk, Mustafa Kemal;
Özçelik, Süleyman;
Suludere, Zekiye;
Özbay, Ekmel

Publication type:

Article

Preparation of Fe-C nanofiber composites by metal organic complex and potential application in supercapacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 5, p. 4665, doi. 10.1007/s10854-019-00760-z

By:

Wang, Guanyi;
Sun, Xingwei;
Bai, Jie;
Han, Limin

Publication type:

Article

Simulation and fabrication of N-polar GaN-based blue-green light-emitting diodes with p-type AlGaN electron blocking layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 11, p. 9321, doi. 10.1007/s10854-018-8962-y

By:

Deng, Gaoqiang;
Zhang, Yuantao;
Yu, Ye;
Yan, Long;
Li, Pengchong;
Han, Xu;
Chen, Liang;
Zhao, Degang;
Du, Guotong

Publication type:

Article

Effects of thickness on the structural, ferroelectric and dielectric properties of (Nb,Fe)-codoped NaBiTiO thin film.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 23, p. 17833, doi. 10.1007/s10854-017-7724-6

By:

Song, J.;
Yang, C.;
Zhang, L.;
Han, Y.;
Qian, J.

Publication type:

Article

The effect of underlayers on defect-related droop in InGaN-based light-emitting diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 15, p. 10981, doi. 10.1007/s10854-017-6879-5

By:

Wang, Min-Shuai;
Huang, Xiao-Jing;
Cai, Xiao-Mei;
Yang, Lan;
Zheng, Kai

Publication type:

Article

Study on the optical properties of β-GaO films grown by MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 15, p. 10997, doi. 10.1007/s10854-017-6882-x

By:

Hu, Daqiang;
Zhuang, Shiwei;
Ma, Zhengzheng;
Dong, Xin;
Du, Guotong;
Zhang, Baolin;
Zhang, Yuantao;
Yin, Jingzhi

Publication type:

Article

MOVPE growth of InAsBi/InAs/GaAs heterostructure analyzed by in situ spectral reflectance.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 12, p. 8708, doi. 10.1007/s10854-017-6595-1

By:

Boussaha, R.;
Fitouri, H.;
Rebey, A.;
El Jani, B.

Publication type:

Article

Comparison of GaAs photocathode grown by MOCVD and MBE: a first-principle and experimental research.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 10, p. 7429, doi. 10.1007/s10854-017-6432-6

By:

Xu, Yuan;
Chang, Benkang;
Chen, Liang;
Chen, Xinlong;
Qian, Yunsheng

Publication type:

Article

Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 4, p. 3200, doi. 10.1007/s10854-016-5909-z

By:

Arslan, Engin;
Öztürk, Mustafa;
Tıraş, Engin;
Tıraş, Tülay;
Özçelik, Süleyman;
Özbay, Ekmel

Publication type:

Article

Influence of substrate temperature on the optical properties of Sb-doped ZnO films prepared by MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 3, p. 2602, doi. 10.1007/s10854-016-5836-z

By:

Cheng, Yi;
Yang, Kun;
Chen, Jixiang;
Jing, Bo;
Che, Li;
Yin, Hongming;
Liang, Hongwei;
Du, Guotong

Publication type:

Article

Effect of VI/II gas ratio on the properties of MOCVD grown ZnO nanostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1756, doi. 10.1007/s10854-016-5722-8

By:

Pati, Sumati

Publication type:

Article

Stable self-polarization in Nd and Ti codoped BiFeO films.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 2233, doi. 10.1007/s10854-016-5793-6

By:

Lv, P.;
Jiang, X.;
Yan, J.;
Hu, G.

Publication type:

Article

High quality InP epilayers grown on GaAs substrates using metamorphic AlGaInAs buffers by metalorganic chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 745, doi. 10.1007/s10854-016-5585-z

By:

Zhao, Yongming;
He, Yang;
Sun, Yurun;
Dong, Jianrong;
Yu, Shuzhen

Publication type:

Article

Assessment of refractive index changes by spectral reflectance in the first stages of AlGaN layer growth using SiN treatment.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 6, p. 6336, doi. 10.1007/s10854-016-4568-4

By:

Benzarti, Z.;
Khelifi, M.;
Khalfallah, A.;
El Jani, B.

Publication type:

Article

Structural investigation of AlInN/AlN/GaN heterostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2852, doi. 10.1007/s10854-015-4101-1

By:

Tamer, M.;
Öztürk, M.;
Çörekçi, S.;
Baş, Y.;
Gültekin, A.;
Kurtuluş, G.;
Özçelik, S.;
Özbay, E.

Publication type:

Article

Effects of AlN buffer on the physical properties of GaN films grown on 6H-SiC substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 2, p. 1738, doi. 10.1007/s10854-015-3948-5

By:

Huang, Zhen;
Zhang, Yuantao;
Zhao, Baijun;
Yang, Fan;
Jiang, Junyan;
Deng, Gaoqiang;
Li, Baozhu;
Liang, Hongwei;
Chang, Yuchun;
Song, Junfeng

Publication type:

Article

Characterization of tunable band gap aluminum indium oxide films prepared on SiO (0001) by MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 1, p. 599, doi. 10.1007/s10854-015-3794-5

By:

Du, Xuejian;
Li, Zhao;
Luan, Caina;
Wang, Weiguang;
Wang, Mingxian;
Ma, Jin

Publication type:

Article

Characterization of Sn-doped β-GaO films deposited on MgO (100) substrate by MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 10, p. 7889, doi. 10.1007/s10854-015-3440-2

By:

Mi, Wei;
Ma, Jin;
Li, Zhao;
Luan, Caina;
Xiao, Hongdi

Publication type:

Article

Electromagnetic and microwave absorption properties of carbon fibers coated with carbonyl iron.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 9, p. 6518, doi. 10.1007/s10854-015-3247-1

By:

Zhang, Zeyang;
Liu, Xiangxuan;
Zhang, Haifeng;
Li, Ersen

Publication type:

Article

Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 3, p. 1591, doi. 10.1007/s10854-014-2580-0

By:

Cai, Xin;
Liang, Hongwei;
Xia, Xiaochuan;
Shen, Rensheng;
Liu, Yang;
Luo, Yingmin;
Du, Guotong

Publication type:

Article

Epitaxial growth and optical characterization of AlInGaN quaternary alloys with high Al/In mole ratio.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 2, p. 705, doi. 10.1007/s10854-014-2453-6

By:

Zhu, Min;
Zhang, Xiong;
Wang, Shuchang;
Yang, Hongquan;
Cui, Yiping

Publication type:

Article

Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 10, p. 4200, doi. 10.1007/s10854-014-2149-y

By:

Zhuo, Xiang-Jing;
Zhang, Jun;
Li, Dan-Wei;
Ren, Zhi-Wei;
Yi, Han-Xiang;
Wang, Xing-Fu;
Tong, Jin-Hui;
Chen, Xin;
Zhao, Bi-Jun;
Wang, Wei-Li;
Li, Shu-Ti

Publication type:

Article

The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 10, p. 4268, doi. 10.1007/s10854-014-2159-9

By:

Tao, Pengcheng;
Liang, Hongwei;
Xia, Xiaochuan;
Feng, Qiuju;
Wang, Dongsheng;
Liu, Yang;
Shen, Rensheng;
Zhang, Kexiong;
Cai, Xin;
Luo, Yingmin;
Du, Guotong

Publication type:

Article

Growth characteristics and device properties of MOD derived β-GaO films.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3629, doi. 10.1007/s10854-014-2066-0

By:

Guo, Pei;
Xiong, Jie;
Zhao, Xiaohui;
Sheng, Tuo;
Yue, Chao;
Tao, Bowan;
Liu, Xingzhao

Publication type:

Article

Indium rich InGaN solar cells grown by MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3652, doi. 10.1007/s10854-014-2070-4

By:

Çakmak, H.;
Arslan, Engin;
Rudziński, M.;
Demirel, P.;
Unalan, H.;
Strupiński, W.;
Turan, R.;
Öztürk, M.;
Özbay, E.

Publication type:

Article

Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 1, p. 267, doi. 10.1007/s10854-013-1582-7

By:

Yang, Dechao;
Liang, Hongwei;
Qiu, Yu;
Shen, Rensheng;
Liu, Yang;
Xia, Xiaochuan;
Song, Shiwei;
Zhang, Kexiong;
Yu, Zhennan;
Du, Guotong

Publication type:

Article

Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 11, p. 4471, doi. 10.1007/s10854-013-1427-4

By:

Arslan, Engin;
Ozturk, Mustafa;
Çakmak, Huseyin;
Demirel, Pakize;
Özçelik, Süleyman;
Ozbay, Ekmel

Publication type:

Article

Improved quality of GaN epilayer grown on porous SiC substrate by in situ H pre-treatment.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 9, p. 3299, doi. 10.1007/s10854-013-1246-7

By:

Song, Shiwei;
Shen, Rensheng;
Liang, Hongwei;
Liu, Yang;
Xia, Xiaochuan;
Zhang, Kexiong;
Yang, Dechao;
Wang, Dongsheng;
Du, Guotong

Publication type:

Article

Influence of thin platinum layer on the magnetic properties of multiple layers of CVD cobalt thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 10, p. 1881, doi. 10.1007/s10854-012-0678-9

By:

Deo, Nirmalendu;
Bain, Michael;
Montgomery, John;
Gamble, Harold

Publication type:

Article

Large and uniform piezoresponse of BiFeWO thin film annealed at 450 °C.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 10, p. 1864, doi. 10.1007/s10854-012-0675-z

By:

Zhang, Hongyan;
Cheng, Ling;
Jiang, Bo;
Sun, Wen;
Liu, Jingjing;
Hu, Guangda

Publication type:

Article

Characterization of IrO/CNT nanocomposites.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 7, p. 890, doi. 10.1007/s10854-010-0231-7

By:

Chen, Y. M.;
Huang, Y. S.;
Lee, K. Y.;
Tsai, D. S.;
Tiong, K. K.

Publication type:

Article

Growth and characterization of well-aligned rutile TiO2 nanocrystals on sapphire substrates via metal organic vapour deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 332, doi. 10.1007/s10854-008-9611-7

By:

Chen, C. A.;
Korotcov, A.;
Ying-Sheng Huang;
Chung, W. H.;
Tsai, D. S.;
Tiong, K. K.

Publication type:

Article

Raman spectroscopy study of the phase transformation on nanocrystalline titania films prepared via metal organic vapour deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 303, doi. 10.1007/s10854-008-9595-3

By:

Chen, C. A.;
Huang, Y. S.;
Chung, W. H.;
Tsai, D. S.;
Tiong, K. K.

Publication type:

Article

Effect of β-irradiation on photoluminescence of MOCVD grown GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 1, p. 14, doi. 10.1007/s10854-008-9587-3

By:

Majid, Abdul;
Israr, M.;
Jianjun Zhu;
Ali, Akbar

Publication type:

Article

Study of in-depth strain variation in ion-irradiated GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 68, doi. 10.1007/s10854-007-9540-x

By:

Herms, Martin;
Zeimer, Ute;
Sonia, Gnanapragasam;
Brunner, Frank;
Richter, Eberhard;
Weyers, Markus;
Tränkle, Günther;
Behm, Thomas;
Irmer, Gert;
Pensl, Gerhard;
Denker, Andrea;
Opitz-Coutureau, Jörg

Publication type:

Article

Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field method.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 107, doi. 10.1007/s10854-007-9556-2

By:

Frigeri, C.;
Attolini, G.;
Bosi, M.;
Pelosi, C.;
Germini, F.

Publication type:

Article

The application of a statistical methodology to investigate deposition parameters in CdTe/CdS solar cells grown by MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 7, p. 639, doi. 10.1007/s10854-007-9412-4

By:

Rowlands, R.;
Barrioz, V.;
Jones, E.;
Irvine, S.;
Lamb, D.

Publication type:

Article

In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 137, doi. 10.1007/s10854-007-9306-5

By:

Reentilä, O.;
Lankinen, A.;
Mattila, M.;
Säynätjoki, A.;
Tuomi, T. O.;
Lipsanen, H.;
O'Reilly, L.;
McNally, P. J.

Publication type:

Article

Influence of a SiN mask on GaN layer by metalorganic chemical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 5, p. 471, doi. 10.1007/s10854-007-9365-7

By:

Deok Kyu Kim

Publication type:

Article