Works about METAL insulator semiconductors

Results: 307

The Dynamic Phase Transition Modulation of Ion-Liquid Gating VO2 Thin Film: Formation, Diffusion, and Recovery of Oxygen Vacancies.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 20, p. 3532, doi. 10.1002/adfm.201505399

By:

Chen, Shi;
Wang, Xi jun;
Fan, Lele;
Liao, Guangming;
Chen, Yuliang;
Chu, Wangsheng;
Song, Li;
Jiang, Jun;
Zou, Chongwen

Publication type:

Article

Metal-Insulator-Semiconductor Coaxial Microfibers Based on Self-Organization of Organic Semiconductor:Polymer Blend for Weavable, Fibriform Organic Field-Effect Transistors.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 16, p. 2706, doi. 10.1002/adfm.201504972

By:

Kim, Hae Min;
Kang, Hyun Wook;
Hwang, Do Kyung;
Lim, Ho Sun;
Ju, Byeong‐Kwon;
Lim, Jung Ah

Publication type:

Article

Low-Temperature Transport in Crystalline Ge1Sb2Te4.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 40, p. 6390, doi. 10.1002/adfm.201500830

By:

Volker, Hanno;
Jost, Peter;
Wuttig, Matthias

Publication type:

Article

Electrically Driven Random Laser Memory.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 26, p. 4058, doi. 10.1002/adfm.201500734

By:

Wang, Cih-Su;
Nieh, Chuan-Hsien;
Chen, Yang-Fang;
Lin, Tai-Yuan

Publication type:

Article

A Photoresponsive Red-Hair-Inspired Polydopamine-Based Copolymer for Hybrid Photocapacitive Sensors.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 45, p. 7161, doi. 10.1002/adfm.201401377

By:

Ambrico, Marianna;
Vecchia, Nicola Fyodor Della;
Ambrico, Paolo F.;
Cardone, Antonio;
Cicco, Stefania R.;
Ligonzo, Teresa;
Avolio, Roberto;
Napolitano, Alessandra;
d’Ischia, Marco

Publication type:

Article

GaN based high temperature strain gauges.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 195, doi. 10.1007/s10854-007-9331-4

By:

Tilak, V.;
Jiang, J.;
Batoni, P.;
Knobloch, A.

Publication type:

Article

Conductor-Insulator Transition-Like Phenomenon in Thin BaTiO3 Film Heterostructures.

Published in:

Ferroelectrics, 2008, v. 370, n. 1, p. 39, doi. 10.1080/00150190802384294

By:

Kaku, Shigeru;
Miyauchi, Satoshi;
Arai, Take;
Watanabe, Yukio

Publication type:

Article

Impedance Spectroscopic Characterization of Sol-Gel Prepared SrTiO3 Thin Films on Silicon.

Published in:

Ferroelectrics, 2005, v. 318, n. 1, p. 193, doi. 10.1080/00150190590966379

By:

Guo, H.-Y.;
Ye, Z.-G.

Publication type:

Article

ZnO Nanorods as Antireflection Layers in Metal-Insulator-Semiconductor Solar Cells.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 13, p. N.PAG, doi. 10.3390/electronics11132068

By:

Chang, Chung-Cheng;
Huang, Chia-Hong

Publication type:

Article

Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep06604

By:

Hee Taek Yi;
Bin Gao;
Wei Xie;
Sang-Wook Cheong;
Podzorov, Vitaly

Publication type:

Article

In Situ Atom Scale Visualization of Domain Wall Dynamics in VO2 Insulator-Metal Phase Transition.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep06544

By:

Xinfeng He;
Tao Xu;
Xiaofeng Xu;
Yijie Zeng;
Jing Xu;
Litao Sun;
Chunrui Wang;
Huaizhong Xing;
Binhe Wu;
Aijiang Lu;
Dingquan Liu;
Xiaoshuang Chen;
Junhao Chu

Publication type:

Article

Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep04859

By:

Jifa Tian;
Cuizu Chang;
Helin Cao;
Ke He;
Xucun Ma;
Qikun Xue;
Chen, Yong P.

Publication type:

Article

Role of microstructures on the M1-M2 phase transition in epitaxial VO2 thin films.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep04854

By:

Yanda Ji;
Yin Zhang;
Min Gao;
Zhen Yuan;
Yudong Xia;
Changqing Jin;
Bowan Tao;
Chonglin Chen;
Quanxi Jia;
Yuan Lin

Publication type:

Article

High-density Two-Dimensional Small Polaron Gas in a Delta-Doped Mott Insulator.

Published in:

Scientific Reports, 2013, p. 1, doi. 10.1038/srep03284

By:

Ouellette, Daniel G.;
Moetakef, Pouya;
Cain, Tyler A.;
Zhang, Jack Y.;
Stemmer, Susanne;
Emin, David;
Allen, S. James

Publication type:

Article

Electrical Performance of Zinc Oxide Thin Films Transistors.

Published in:

Journal of Nano- & Electronic Physics, 2017, v. 9, n. 6, p. 1, doi. 10.21272/jnep.9(6).06002

By:

Ondo-Ndong, R.;
Essone-Obame, H.;
Koumba, N.

Publication type:

Article

Fabrication and Switching Performance of 8 A–500 V D‐Mode GaN MISHEMTs.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202300518

By:

Baby, Rijo;
Roy, Shamibrota K.;
Tripathy, Sudhiranjan;
Muralidharan, Rangarajan;
Basu, Kaushik;
Raghavan, Srinivasan;
Nath, Digbijoy N.

Publication type:

Article

Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202370036

By:

Wu, Jui-Sheng;
Weng, You-Chen;
Yang, Tsung-Ying;
Wu, Chia-Hsun;
Lee, Chih-Chieh;
Iwai, Hiroshi;
Chang, Edward Yi

Publication type:

Article

Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202370036

By:

Wu, Jui-Sheng;
Weng, You-Chen;
Yang, Tsung-Ying;
Wu, Chia-Hsun;
Lee, Chih-Chieh;
Iwai, Hiroshi;
Chang, Edward Yi

Publication type:

Article

Investigation of Isolation Approaches and the Stoichiometry of SiNx Passivation Layers in "Buffer‐Free" AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 8, p. 1, doi. 10.1002/pssa.202200533

By:

Hult, Björn;
Thorsell, Mattias;
Chen, Jr-Tai;
Rorsman, Niklas

Publication type:

Article

Dual‐Gate Graphene/h‐BN/GaSe Metal–Insulator–Semiconductor Field‐Effect Transistor (MISFET).

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 20, p. 1, doi. 10.1002/pssa.202100818

By:

Abderrahmane, Abdelkader;
Jung, Pan-Gum;
Woo, Changlim;
Ko, Pil Ju

Publication type:

Article

Comparative Study on Characteristics of AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 10, p. 1, doi. 10.1002/pssa.202200010

By:

Zhen, Zixin;
Wang, Quan;
Qin, Yanbin;
Chen, Changxi;
Xu, Jiankai;
Jiang, Lijuan;
Xiao, Hongling;
Wang, Qian;
Wang, Xiaoliang;
Tan, Manqing;
Feng, Chun

Publication type:

Article

Modified Ramped Current Stress Technique for Monitoring Thin Dielectrics Reliability and Charge Degradation.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 9, p. 1, doi. 10.1002/pssa.202100400

By:

Andreev, Dmitrii V.;
Maslovsky, Vladimir M.;
Andreev, Vladimir V.;
Stolyarov, Alexander A.

Publication type:

Article

Characterizing a high spin magnetic impurity via Andreev reflection spectroscopy.

Published in:

European Physical Journal B: Condensed Matter, 2018, v. 91, n. 8, p. 1, doi. 10.1140/epjb/e2018-80683-x

By:

Pal, Subhajit;
Benjamin, Colin

Publication type:

Article

Mott-Hubbard transition in the mass-imbalanced Hubbard model.

Published in:

European Physical Journal B: Condensed Matter, 2017, v. 90, n. 6, p. 1, doi. 10.1140/epjb/e2017-80115-7

By:

Philipp, Marie-Therese;
Wallerberger, Markus;
Gunacker, Patrik;
Held, Karsten

Publication type:

Article

Photocapacitance Effect at Low Temperatures in a Unipolar MIS Capacitor with a Semiconductor Electrode Doped with Two Different Acceptor Impurities.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1155, doi. 10.1134/1.1410656

By:

Penin, N. A.

Publication type:

Article

Electronic Properties of InAs-Based Metal–Insulator–Semiconductor (MIS) Structures.

Published in:

Semiconductors, 2001, v. 35, n. 9, p. 1063, doi. 10.1134/1.1403571

By:

Kuryshev, G. L.;
Kovchavtsev, A. P.;
Valisheva, N. A.

Publication type:

Article

A Study of an Al–Ge[sub 3]N[sub 4]–Ge Structure by the Method of Photo-Capacitance–Voltage Characteristics.

Published in:

Semiconductors, 2000, v. 34, n. 10, p. 1183, doi. 10.1134/1.1317580

By:

Dzhanelidze, R. B.;
Dzhanelidze, M. B.;
Katsiashvili, M. R.

Publication type:

Article

Photocapacitance Effect in a Monopolar Metal–Insulator–Semiconductor Capacitor at Low Temperatures.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 545, doi. 10.1134/1.1188025

By:

Penin, N. A.

Publication type:

Article

Effect of Al Dopant Al-LaPO4 as an Interfacial Layer of Cu/Al-LaPO4/n-Si-Based MIS Schottky Barrier Diode for Optoelectronic Applications.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 6, p. 3831, doi. 10.1007/s11664-023-10373-2

By:

Mariappan, R.;
Priya, R.;
Jayaprakash, R. N.

Publication type:

Article

Metal‐Insulator‐Semiconductor Anodes for Ultrastable and Site‐Selective Upconversion Photoinduced Electrochemiluminescence.

Published in:

Angewandte Chemie, 2022, v. 134, n. 20, p. 1, doi. 10.1002/ange.202201865

By:

Zhao, Yiran;
Descamps, Julie;
Ababou‐Girard, Soraya;
Bergamini, Jean‐François;
Santinacci, Lionel;
Léger, Yoan;
Sojic, Neso;
Loget, Gabriel

Publication type:

Article

On the triggering mechanism for the metal–insulator transition in thin film VO2 devices: electric field versus thermal effects.

Published in:

Journal of Materials Science, 2009, v. 44, n. 19, p. 5345, doi. 10.1007/s10853-009-3442-7

By:

Gopalakrishnan, Gokul;
Ruzmetov, Dmitry;
Ramanathan, Shriram

Publication type:

Article

Modelling and observations of electron beam charging of an insulator/metal bilayer and its impact on secondary electron images in defect inspection equipment.

Published in:

Journal of Electron Microscopy, 2010, v. 59, n. S1, p. S189, doi. 10.1093/jmicro/dfq047

By:

Ohya, Kaoru;
Inai, Kensuke;
Kawasaki, Ryosuke;
Saito, Misako;
Hayashi, Teruyuki;
Jau, Jack;
Kanai, Kenichi

Publication type:

Article

Sub-bandgap near-infrared photovoltaic response in Au/Al2O3/n-Si metal–insulator–semiconductor structure by plasmon-enhanced internal photoemission.

Published in:

Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03818-4

By:

Dai, Xiyuan;
Wu, Li;
Yu, Liang;
Yu, Zhiyuan;
Ma, Fengyang;
Zhang, Yuchen;
Yang, Yanru;
Sun, Jian;
Lu, Ming

Publication type:

Article

Influence of Baccharis salicifolia Extract on Iron Oxide Nanoparticles in MCM-41@IONP and Its Application in Room-Temperature-Fabricated Metal–Insulator–Semiconductor Diodes.

Published in:

Applied Nano, 2024, v. 5, n. 2, p. 58, doi. 10.3390/applnano5020006

By:

Bravo de Luciano, Gerardo Miguel;
Soto-Cruz, Blanca Susana;
Romero-López, Anabel;
Panecatl-Bernal, Yesmin;
Luna-López, José Alberto;
Domínguez-Jiménez, Miguel Ángel

Publication type:

Article

METAL-INSULATOR TRANSITIONS IN DOPED La-BASED SUPER CONDUCTORS WITH SMALL-RADIUS DOPANTS.

Published in:

Eurasian Physical Technical Journal, 2022, v. 19, n. 1, p. 15, doi. 10.31489/2022No1/15-19

By:

Dzhumanov, S.;
Kurbanov, U. T.;
Khudayberdiev, Z. S.

Publication type:

Article

N‐polar deep‐recess GaN MISHEMT with enhanced ft·LG by gate dielectric thinning.

Published in:

Electronics Letters (Wiley-Blackwell), 2024, v. 60, n. 13, p. 1, doi. 10.1049/ell2.13272

By:

Collins, Henry;
Akso, Emre;
Clymore, Christopher J.;
Khan, Kamruzzaman;
Hamwey, Robert;
Hatui, Nirupam;
Guidry, Matthew;
Keller, Stacia;
Mishra, Umesh K.

Publication type:

Article

Application of PMA Towards Moderating the Charge Storage Capability of MIS Memory Cell Based on PECVD Deposited Silicon Nitride Thin Films.

Published in:

Turkish Journal of Physics, 2007, v. 31, n. 4, p. 217

By:

Sharma, Satinder K.;
Prasad, B.;
Kumar, Dinesh

Publication type:

Article

Comprehensive Research on the Response of MIS Sensors of Pd‒SiO2‒Si and Pd‒Ta2O5‒SiO2‒Si Structures to Various Gases in Air.

Published in:

Russian Journal of General Chemistry, 2018, v. 88, n. 12, p. 2732, doi. 10.1134/S1070363218120435

By:

Bolodurin, B. A.;
Korchak, V. Yu.;
Litvinov, A. V.;
Mikhailov, A. A.;
Nozdrya, D. A.;
Pomazan, Yu. V.;
Filipchuk, D. V.;
Etrekova, M. O.

Publication type:

Article

High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology.

Published in:

Crystals (2073-4352), 2024, v. 14, n. 3, p. 253, doi. 10.3390/cryst14030253

By:

Guo, Bohan;
Yu, Guohao;
Zhang, Li;
Zhou, Jiaan;
Wang, Zheming;
Xing, Runxian;
Yang, An;
Li, Yu;
Liu, Bosen;
Zeng, Xiaohong;
Du, Zhongkai;
Deng, Xuguang;
Zeng, Zhongming;
Zhang, Baoshun

Publication type:

Article

Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review.

Published in:

Crystals (2073-4352), 2022, v. 12, n. 11, p. 1581, doi. 10.3390/cryst12111581

By:

Islam, Naeemul;
Mohamed, Mohamed Fauzi Packeer;
Khan, Muhammad Firdaus Akbar Jalaludin;
Falina, Shaili;
Kawarada, Hiroshi;
Syamsul, Mohd

Publication type:

Article

Effect of Gate Dielectric Material on the Electrical Properties of MoSe 2 -Based Metal–Insulator–Semiconductor Field-Effect Transistor.

Published in:

Crystals (2073-4352), 2022, v. 12, n. 9, p. N.PAG, doi. 10.3390/cryst12091301

By:

Abderrahmane, Abdelkader;
Jung, Pan-Gum;
Woo, Changlim;
Ko, Pil Ju

Publication type:

Article

Magnetism and Pressure-Induced Superconductivity of Checkerboard-Type Charge-Ordered Molecular Conductor Β-(meso-DMBEDT-TTF)2X (X = PF6 and AsF6).

Published in:

Crystals (2073-4352), 2012, v. 2, n. 4, p. 1502, doi. 10.3390/cryst2041502

By:

Shikama, Takahisa;
Shimokawa, Tatsuya;
Lee, Sanguchul;
Isono, Takayuki;
Ueda, Akira;
Takahashi, Kazuyuki;
Nakao, Akiko;
Kumai, Reiji;
Nakao, Hironori;
Kobayashi, Kensuke;
Murakami, Youichi;
Kimata, Motoi;
Tajima, Hiroyuki;
Matsubayashi, Kazuyuki;
Uwatoko, Yoshiya;
Nishio, Yutaka;
Kajita, Koji;
Mori, Hatsumi

Publication type:

Article

Graphene Frameworks for Nanodevices.

Published in:

Coatings (2079-6412), 2022, v. 12, n. 12, p. 1936, doi. 10.3390/coatings12121936

By:

Phan, Thanh Luan

Publication type:

Article

Charge-storage effects in a metal-insulator-semi-conductor structure containing germanium nano-crystals formed by rapid thermal annealing of an electron-beam evaporated germanium layer.

Published in:

Applied Physics A: Materials Science & Processing, 2004, v. 78, n. 8, p. 1181, doi. 10.1007/s00339-003-2482-0

By:

Heng, C. L.;
Tjiu, W. W.;
Finstad, T. G.

Publication type:

Article

Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes.

Published in:

Applied Physics A: Materials Science & Processing, 1996, v. 62, n. 3, p. 269

By:

Sağlam, M.;
Ayyıldız, E.;
Gümüş, A.;
Türüt, A.;
Efeoğlu, H.;
Tüzemen, S.

Publication type:

Article

Emergent quantum properties from low-dimensional building blocks and their superlattices.

Published in:

Nano Research, 2024, v. 17, n. 12, p. 10490, doi. 10.1007/s12274-024-6984-8

By:

Hong, Ken Seungmin;
Chen, Ou;
Bai, Yusong

Publication type:

Article

Atomic layer deposition of Al2O3 for industrial local Al back-surface field (BSF) solar cells.

Published in:

Photovoltaics International, 2011, n. 13, p. 92

By:

Rothschild, Aude;
Vermang, Bart;
Goverde, Hans

Publication type:

Article

The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si3N4/p-Si device.

Published in:

Pamukkale University Journal of Engineering Sciences, 2017, v. 23, n. 5, p. 536, doi. 10.5505/pajes.2016.23911

By:

ORAK, İkram;
KOÇYİĞİT, Adem

Publication type:

Article

Comparison between MIM and Schottky Diodes for Use in High Frequencies.

Published in:

International Review of Physics, 2010, v. 4, n. 6, p. 285

By:

Becharef, R.;
Souar, Z.;
Bassou, G.

Publication type:

Article

Control of elastic-hysteretic characteristics of multilayer all-metal vibration insulators with structural damping.

Published in:

Journal of Vibroengineering, 2017, v. 19, n. 5, p. 3178, doi. 10.21595/jve.2017.17016

By:

Gvozdev, Alexander S.;
Melentjev, Vladimir S.

Publication type:

Article