Works matching DE "METAL insulator semiconductors"
Results: 290
Polymer Insulator Processing‐Organic Transistor Performance Relationship Investigated through Admittance Spectroscopy.
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- Macromolecular Symposia, 2022, v. 405, n. 1, p. 1, doi. 10.1002/masy.202100255
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- Article
Novel analytical model for nano-coupler between metal-insulator-metal plasmonic and dielectric slab waveguides.
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- Optical & Quantum Electronics, 2018, v. 50, n. 12, p. 1, doi. 10.1007/s11082-018-1685-8
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- Article
Numerical investigation of a nano-scale electro-plasmonic switch based on metal-insulator-metal stub filter.
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- Optical & Quantum Electronics, 2015, v. 47, n. 2, p. 159, doi. 10.1007/s11082-014-9895-1
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- Article
Near-Field Thermophotovoltaic Generation by Tuning Spectral Radiation Using a Structured Emitter and Metal-Semiconductor-Metal Cell.
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- Thermal Science & Engineering (0918-9963), 2022, v. 30, n. 2, p. 35
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- Article
N‐polar deep‐recess GaN MISHEMT with enhanced f<sub>t</sub>·L<sub>G</sub> by gate dielectric thinning.
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- Electronics Letters (Wiley-Blackwell), 2024, v. 60, n. 13, p. 1, doi. 10.1049/ell2.13272
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- Article
Two-dimensional tellurium-based diodes for RF applications.
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- NPJ 2D Materials & Applications, 2023, v. 7, n. 1, p. 1, doi. 10.1038/s41699-023-00433-w
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- Article
Application of PMA Towards Moderating the Charge Storage Capability of MIS Memory Cell Based on PECVD Deposited Silicon Nitride Thin Films.
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- Turkish Journal of Physics, 2007, v. 31, n. 4, p. 217
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- Article
Metal-insulator transition in Fe<sub> x </sub>Mn<sub>1− x </sub>S crystals.
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- JETP Letters, 2007, v. 86, n. 6, p. 371, doi. 10.1134/S0021364007180051
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- Article
Effect of Formation Conditions for Hafnium Oxide Films on Structural and Electrophysical Properties of Heterostructures.
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- Journal of Communications Technology & Electronics, 2023, v. 68, n. 10, p. 1191, doi. 10.1134/S1064226923100017
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- Article
Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy.
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- Journal of Communications Technology & Electronics, 2023, v. 68, n. 9, p. 1036, doi. 10.1134/S1064226923090279
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- Article
Nano-scale charge trapping memory based on two-dimensional conjugated microporous polymer.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-44232-1
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- Article
OPTIMIZATION OF INSULATED HfO<sub>2</sub> DIELECTRICS OF GaN/InN/GaN/In<sub>0.1</sub>Ga<sub>0.9</sub>N ENHANCEMENT MODE OF MIS-HEMT HETEROSTRUCTURE FOR HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS.
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- Nigerian Journal of Technology, 2019, v. 38, n. 2, p. 503, doi. 10.4314/njt.v38i2.29
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- Article
RF/Analog Performance Optimization and Assessing Linearity/Distortion FoMs of HDDP-DG-NCFET for Terahertz Applications.
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- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2024, v. 49, n. 5, p. 7179, doi. 10.1007/s13369-023-08671-2
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- Article
Investigation of Enhancement-Mode AlGaN/GaN MIS-HEMT with Recessed Gate Structure.
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- Semiconductors, 2024, v. 58, n. 8, p. 637, doi. 10.1134/S1063782624600967
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- Article
Ion Doping of Silicon Carbide in the Technology of High-Power Electronic Devices (Review).
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- Semiconductors, 2022, v. 56, n. 13, p. 472, doi. 10.1134/S1063782622130024
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- Article
Determining the Hydrogen Concentration from the Photovoltage of Pd-Oxide-InP MIS Structures.
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- Semiconductors, 2018, v. 52, n. 10, p. 1303, doi. 10.1134/S1063782618100044
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- Article
Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies.
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- Semiconductors, 2018, v. 52, n. 4, p. 420, doi. 10.1134/S1063782618040073
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- Article
Charge density at the AlO/Si interface in Metal-lnsulator-Semiconductor devices: Semiclassical and quantum mechanical descriptions.
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- Semiconductors, 2017, v. 51, n. 12, p. 1625, doi. 10.1134/S1063782617120089
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- Article
Control of elastic-hysteretic characteristics of multilayer all-metal vibration insulators with structural damping.
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- Journal of Vibroengineering, 2017, v. 19, n. 5, p. 3178, doi. 10.21595/jve.2017.17016
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- Article
A local metallic state in globally insulating La<sub>1.24</sub>Sr<sub>1.76</sub>Mn<sub>2</sub>O<sub>7</sub> well above the metal–insulator transition.
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- 2007
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- Letter
Stability Improvement of 60 GHz Narrowband Amplifier Using Microstrip Coupled Lines.
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- ETRI Journal, 2009, v. 31, n. 6, p. 741, doi. 10.4218/etrij.09.1209.0012
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- Article
PHOTOELECTROCHEMICAL PERFORMANCE STUDIES OF CdSe: Sb ELECTROLYTE CELL.
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- Chalcogenide Letters, 2009, v. 6, n. 4, p. 149
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- Article
Effect of Yb, Gd, and Nd Substitution at the Sr Site on the Metal–Insulator Transition of the (Bi,Pb)-2212 System.
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- International Journal of Applied Ceramic Technology, 2010, v. 7, p. E16, doi. 10.1111/j.1744-7402.2009.02356.x
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- Article
Analysis of electrical equivalent circuit of metal-insulator-semiconductor structure based on admittance measurements.
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- Materials Science (0137-1339), 2008, v. 26, n. 1, p. 63
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- Article
Magnetisation and electron spin resonance of the colossal magnetoresistive La<sub>0.67</sub>Ca<sub>0.33</sub>Mn<sub>1-x</sub>Fe<sub>x</sub>O<sub>3</sub>.
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- Materials Science (0137-1339), 2006, v. 24, n. 3, p. 795
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- Article
A HEMT LARGE-SIGNAL MODEL WITH IMPROVED TRANSCONDUCTANCE AND GATE CAPACITANCE.
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- Microwave Journal, 2011, v. 54, n. 5, p. 168
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- Article
Characterization and fabrication of indium doped LaPO<sub>4</sub> as an interfacial layer of Cu/In–LaPO<sub>4</sub>/n–Si and developed for Schottky barrier diode.
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- Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 5, p. 1, doi. 10.1007/s10854-023-09858-x
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- Article
Ionizing radiation effects on Au/TiO2/n-Si metal–insulator-semiconductor (MIS) structure.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 22, p. 19846, doi. 10.1007/s10854-020-04508-y
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- Article
Light-induced resistive switching in silicon-based metal-insulator-semiconductor structures.
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- Technical Physics Letters, 2016, v. 42, n. 5, p. 536, doi. 10.1134/S1063785016050308
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- Article
Increasing the efficiency of a silicon tunnel MIS injector of hot electrons by using high-K oxides.
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- Technical Physics Letters, 2015, v. 41, n. 9, p. 863, doi. 10.1134/S1063785015090102
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- Article
Modeling of the electrical characteristics of spherical metal-insulator-semiconductor tunnel structures.
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- Technical Physics Letters, 2011, v. 37, n. 11, p. 1003, doi. 10.1134/S1063785011110149
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- Article
Dependence of the surface generation velocity at silicon-(lead borosilicate) glass interface on conditions of nonequilibrium depletion region formation.
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- Technical Physics Letters, 2011, v. 37, n. 8, p. 693, doi. 10.1134/S106378501108013X
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- Article
The role of pd hybridization in the metal-insulator transition in NdNiO<sub>3</sub> heterostructure.
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- Materials Research Letters, 2018, v. 6, n. 9, p. 515, doi. 10.1080/21663831.2018.1486893
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- Article
Admittance of barrier nanostructures based on MBE HgCdTe.
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- Applied Nanoscience, 2022, v. 12, n. 3, p. 403, doi. 10.1007/s13204-020-01636-z
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- Article
Unipolar superlattice structures based on MBE HgCdTe for infrared detection.
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- Applied Nanoscience, 2020, v. 10, n. 12, p. 4571, doi. 10.1007/s13204-020-01297-y
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- Article
High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology.
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- Crystals (2073-4352), 2024, v. 14, n. 3, p. 253, doi. 10.3390/cryst14030253
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- Article
Structural and electrical behaviors of silicon nitride thin-films deposited using spin coating technique.
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- Applied Physics A: Materials Science & Processing, 2023, v. 129, n. 7, p. 1, doi. 10.1007/s00339-023-06784-x
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- Article
High-sensitivity refractive index sensors based on Fano resonance in the plasmonic system of splitting ring cavity-coupled MIM waveguide with tooth cavity.
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- Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 1, p. 1, doi. 10.1007/s00339-018-2283-0
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- Article
Low-voltage organic thin film transistors (OTFTs) using crosslinked polyvinyl alcohol (PVA)/neodymium oxide (NdO) bilayer gate dielectrics.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 1, p. 1, doi. 10.1007/s00339-017-1470-8
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- Article
Bi-stable resistive switching in an array of $$\hbox {Cu/Cu}_x\hbox {O/Au}$$ nanowires.
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- Applied Physics A: Materials Science & Processing, 2015, v. 118, n. 1, p. 119, doi. 10.1007/s00339-014-8790-8
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- Article
Effect of annealing temperature on the electrical properties of Au/TaO/n-GaN metal-insulator-semiconductor (MIS) structure.
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- Applied Physics A: Materials Science & Processing, 2013, v. 113, n. 3, p. 713, doi. 10.1007/s00339-013-7797-x
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- Article
Study of electrical properties of Al/Si<sub>3</sub>N<sub>4</sub>/n-GaAs MIS capacitors deposited at low and high frequency PECVD.
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- European Physical Journal - Applied Physics, 2022, v. 97, p. 1, doi. 10.1051/epjap/2022220062
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- Article
Fabrication and characterization of chromium-chromium oxide-chromium metal-insulator-metal (MIM) tunnel junctions.
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- European Physical Journal - Applied Physics, 2014, v. 68, n. 3, p. N.PAG, doi. 10.1051/epjap/2014130489
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- Article
High performance AlGaN/GaN power switch with Si3N4 insulation.
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- European Physical Journal - Applied Physics, 2013, v. 61, n. 1, p. 00, doi. 10.1051/epjap/2012120366
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- Article
Novel Circuit Technique for Reduction of Leakage Current in Series/Parallel PMOS/NMOS Transistor Stack.
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- IETE Journal of Research, 2010, v. 56, n. 6, p. 362, doi. 10.1080/03772063.2010.10876326
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- Article
EFFECTS OF VARIATIONAL PARAMETER IN THE STUDY OF METAL–INSULATOR TRANSITION IN A QUASI-TWO DIMENSIONAL SEMICONDUCTOR SYSTEM.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2003, v. 17, n. 31/32, p. 5961, doi. 10.1142/S0217979203023574
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- Article
Preparation and Characterisation of Ti/BaTiO[sub 3]/InP MIS Structures.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 1/2, p. 281, doi. 10.1142/S0217979202009767
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- Article
Proximity of the Metal-Insulator/Magnetic Transition and its Impact on the One-Electron Spectral Function: A Doping-Dependent Arpes Study.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2000, v. 14, n. 29/31, p. 3596, doi. 10.1142/S0217979200004118
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- Article
The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si<sub>3</sub>N<sub>4</sub>/p-Si device.
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- Pamukkale University Journal of Engineering Sciences, 2017, v. 23, n. 5, p. 536, doi. 10.5505/pajes.2016.23911
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- Article
Metal-Insulator-Semiconductor Photodetectors.
- Published in:
- Sensors (14248220), 2010, v. 10, n. 10, p. 8797, doi. 10.3390/s101008797
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- Publication type:
- Article