Works matching DE "METAL insulator semiconductors"

Results: 307

Evaluation of temperature dependent electrical transport parameters in Fe3O4/SiO2/n-Si metal–insulator-semiconductor (MIS) type Schottky barrier heterojunction in a wide temperature range.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 9, p. 8955, doi. 10.1007/s10854-019-01223-1

By:

Nanda Kumar Reddy, Nallabala;
Godavarthi, Srinivas;
Mohan Kumar, Kesarla;
Kummara, Venkata Krishnaiah;
Prabhakar Vattikuti, S. V.;
Akkera, Harish Sharma;
Bitla, Yugandhar;
Jilani, S. A. K.;
Manjunath, V.

Publication type:

Article

Reduction of leakage current at the SiNx/GaN interface in GaN Schottky diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19353, doi. 10.1007/s10854-018-0064-3

By:

Kolli, Sowmya;
Sunkara, Mahendra;
Alphenaar, Bruce

Publication type:

Article

Preparation and properties of La0.71Ca0.29Mn1−xCrxO3 polycrystalline composites.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19070, doi. 10.1007/s10854-018-0033-x

By:

Yan, Kaikai;
Li, Zhiyu;
Li, Di;
Li, Yule;
Yang, Ning;
Chen, Qingming;
Zhang, Hui

Publication type:

Article

Determination of the critical carrier concentration for the metal-insulator transition in Ga-doped ZnO.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 16, p. 14111, doi. 10.1007/s10854-018-9543-9

By:

Sbeta, M.;
Serin, T.;
Yildiz, A.

Publication type:

Article

Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WOx) films and its MIS structure of Cu/Zr–WOx/p-Si Schottky barrier diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 4, p. 2618, doi. 10.1007/s10854-017-8187-5

By:

Marnadu, R.;
Chandrasekaran, J.;
Raja, M.;
Balaji, M.;
Balasubramani, V.

Publication type:

Article

Embedded nonlinear passive components on flexible substrates for microelectronics applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 15, p. 11550, doi. 10.1007/s10854-017-6954-y

By:

Ghosh, Dipankar

Publication type:

Article

Electronic properties of ZnO nanorod MIS structure.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 10, p. 3788, doi. 10.1007/s10854-013-1319-7

By:

Li, Weicong;
Reisdorffer, F.;
Nguyen, T.;
Kwok, H.

Publication type:

Article

Electrical properties of pulsed laser deposited BiZnNbO thin films for high K gate dielectric application.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 6, p. 626, doi. 10.1007/s10854-010-0187-7

By:

Sudheendran, K.;
James Raju, K. C.

Publication type:

Article

GaN based high temperature strain gauges.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 195, doi. 10.1007/s10854-007-9331-4

By:

Tilak, V.;
Jiang, J.;
Batoni, P.;
Knobloch, A.

Publication type:

Article

MIS-sensors with different metal and insulator layers.

Published in:

Automation & Remote Control, 2013, v. 74, n. 2, p. 295, doi. 10.1134/S0005117913020124

By:

Kalinina, L.;
Litvinov, A.;
Nikolaev, I.

Publication type:

Article

Influence of Baccharis salicifolia Extract on Iron Oxide Nanoparticles in MCM-41@IONP and Its Application in Room-Temperature-Fabricated Metal–Insulator–Semiconductor Diodes.

Published in:

Applied Nano, 2024, v. 5, n. 2, p. 58, doi. 10.3390/applnano5020006

By:

Bravo de Luciano, Gerardo Miguel;
Soto-Cruz, Blanca Susana;
Romero-López, Anabel;
Panecatl-Bernal, Yesmin;
Luna-López, José Alberto;
Domínguez-Jiménez, Miguel Ángel

Publication type:

Article

METAL-INSULATOR TRANSITIONS IN DOPED La-BASED SUPER CONDUCTORS WITH SMALL-RADIUS DOPANTS.

Published in:

Eurasian Physical Technical Journal, 2022, v. 19, n. 1, p. 15, doi. 10.31489/2022No1/15-19

By:

Dzhumanov, S.;
Kurbanov, U. T.;
Khudayberdiev, Z. S.

Publication type:

Article

The role of pd hybridization in the metal-insulator transition in NdNiO3 heterostructure.

Published in:

Materials Research Letters, 2018, v. 6, n. 9, p. 515, doi. 10.1080/21663831.2018.1486893

By:

Chen, Mingjing;
Ning, Xingkun;
Fu, Guangsheng;
Guo, Shuang;
Wang, Lingyun;
Liu, Peng;
Wang, Jianglong;
Wang, Shufang;
Liu, Wei;
Sun, Jirong;
Yu, Tao;
Zhang, Zhidong

Publication type:

Article

Admittance of barrier nanostructures based on MBE HgCdTe.

Published in:

Applied Nanoscience, 2022, v. 12, n. 3, p. 403, doi. 10.1007/s13204-020-01636-z

By:

Izhnin, I. I.;
Voitsekhovskii, A. V.;
Nesmelov, S. N.;
Dzyadukh, S. M.;
Dvoretsky, S. A.;
Mikhailov, N. N.;
Sidorov, G. Y.;
Yakushev, M. V.

Publication type:

Article

Unipolar superlattice structures based on MBE HgCdTe for infrared detection.

Published in:

Applied Nanoscience, 2020, v. 10, n. 12, p. 4571, doi. 10.1007/s13204-020-01297-y

By:

Izhnin, I. I.;
Kurbanov, K. R.;
Voitsekhovskii, A. V.;
Nesmelov, S. N.;
Dzyadukh, S. M.;
Dvoretsky, S. A.;
Mikhailov, N. N.;
Sidorov, G. Y.

Publication type:

Article

Interplay Between Extra Charge Injection and Lattice Evolution in VO2/CH3NH3PbI3 Heterostructure.

Published in:

Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 4, p. 1, doi. 10.1002/pssr.201700416

By:

Gao, Min;
Qi, Zhihui;
Lu, Chang;
Shi, Dong;
Luo, Junsheng;
Jia, Chunyang;
Pan, Taisong;
Zhang, Yin;
Lin, Yuan

Publication type:

Article

Improvement of resistive switching fluctuations by using one step lift-off process.

Published in:

Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 10, p. 594, doi. 10.1002/pssr.201510286

By:

Li, Yingtao;
Gao, Xiaoping;
Fu, Liping;
Yuan, PENg;
Wang, Hong;
Tao, Chunlan

Publication type:

Article

ORBITAL SELECTIVE PHASE TRANSITION.

Published in:

Modern Physics Letters B, 2013, v. 27, n. 20, p. 1, doi. 10.1142/S0217984913300159

By:

YAO YAO;
YU-ZHONG ZHANG;
HUNPYO LEE;
HARALD O. JESCHKE;
ROSER VALENTÍ;
HAI-QING LIN;
CHANG-QIN WU

Publication type:

Article

Revival of Metal-Insulator and Ferromagnetic-Paramagnetic Transitions by Ni Substitution at Mn Site in Charge-Ordered Monovalent Doped Nd0.75Na0.25MnO3 Manganites.

Published in:

Journal of Superconductivity & Novel Magnetism, 2018, v. 31, n. 9, p. 2851, doi. 10.1007/s10948-017-4521-7

By:

Arifin, Maryam;
Ibrahim, N.;
Mohamed, Zakiah;
Yahya, A. K.;
Khan, Nawazish A.;
Khan, M. Nasir

Publication type:

Article

Study of Electrical Transport and Magnetic Properties of Nd0.7Sr0.3MnO3/Nd0.8Na0.2MnO3 Bilayer Thin Films.

Published in:

Journal of Superconductivity & Novel Magnetism, 2018, v. 31, n. 4, p. 1149, doi. 10.1007/s10948-017-4275-2

By:

Gopalarao, T. R.;
Ravi, S.

Publication type:

Article

Magnetoresistance Effect in LaSrNiO-Doped LaCaMnO Nanocomposites.

Published in:

Journal of Superconductivity & Novel Magnetism, 2017, v. 30, n. 3, p. 789, doi. 10.1007/s10948-016-3665-1

By:

Thanh, Tran;
Van, Hoang;
Lee, Jong;
Yu, Seong-Cho

Publication type:

Article

Composites AgPbO/M (M=CuO, CuO) and Exciton Models of Superconductivity.

Published in:

Journal of Superconductivity & Novel Magnetism, 2013, v. 26, n. 5, p. 1897, doi. 10.1007/s10948-012-1987-1

By:

Djurek, Danijel

Publication type:

Article

Metal-Insulator Transition in Optical Lattice System with Site-Dependent Interactions.

Published in:

Journal of Superconductivity & Novel Magnetism, 2013, v. 26, n. 5, p. 1771, doi. 10.1007/s10948-012-2064-5

By:

Saitou, T.;
Koga, A.;
Yamamoto, A.

Publication type:

Article

Structural Characterization and Magneto Electrical Behavior of Sm Doped LaCaMnO Manganites.

Published in:

Journal of Superconductivity & Novel Magnetism, 2013, v. 26, n. 5, p. 1461, doi. 10.1007/s10948-012-2065-4

By:

Altintas, S.;
Amira, A.;
Terzioglu, C.

Publication type:

Article

The Electro-magnetic Properties of LaCaSrMnO/ZnO Composites via Liquid Phase Method.

Published in:

Journal of Superconductivity & Novel Magnetism, 2012, v. 25, n. 7, p. 2523, doi. 10.1007/s10948-012-1680-4

By:

Chen, F.;
Zeng, Y.;
Xiong, Y.;
Li, L.;
Liu, Z.;
Xiong, C.

Publication type:

Article

The Physical Society of Japan: The 2016 Outstanding Paper Award.

Published in:: AAPPS Bulletin, 2016, v. 26, n. 4, p. 39
Publication type:: Article

Analysis of electrical equivalent circuit of metal-insulator-semiconductor structure based on admittance measurements.

Published in:

Materials Science (0137-1339), 2008, v. 26, n. 1, p. 63

By:

Kochowski, S.;
Szydłowski, M.;
Paszkiewicz, R.;
Paszkiewicz, B.

Publication type:

Article

Magnetisation and electron spin resonance of the colossal magnetoresistive La0.67Ca0.33Mn1-xFexO3.

Published in:

Materials Science (0137-1339), 2006, v. 24, n. 3, p. 795

By:

Zając, T.;
Folcik, L.;
Chmist, J.;
Kołodziejczyk, A.;
Drulis, H.;
Krop, K.;
Gritzner, G.

Publication type:

Article

Ba3V2S4O3: A Mott Insulating Frustrated Quasi-One-Dimensional S=1 Magnet.

Published in:

Chemistry - A European Journal, 2015, v. 21, n. 21, p. 7938, doi. 10.1002/chem.201406511

By:

Hopkins, Emily J.;
Prots, Yurii;
Burkhardt, Ulrich;
Watier, Yves;
Hu, Zhiwei;
Kuo, Chang ‐ Yang;
Chiang, Jen ‐ Che;
Pi, Tun ‐ Wen;
Tanaka, Arata;
Tjeng, Liu Hao;
Valldor, Martin

Publication type:

Article

Novel analytical model for nano-coupler between metal-insulator-metal plasmonic and dielectric slab waveguides.

Published in:

Optical & Quantum Electronics, 2018, v. 50, n. 12, p. 1, doi. 10.1007/s11082-018-1685-8

By:

Heydari, Mohammad Bagher;
Asgari, Masoud;
Jafari, Niloofar

Publication type:

Article

Determining the Surface Electrostatic Potential Ψs of a Dielectric-Bordering Semiconductor Using the Method of Ψs"/Ψs Diagrams.

Published in:

Instruments & Experimental Techniques, 2003, v. 46, n. 2, p. 228, doi. 10.1023/A:1023686204195

By:

Zhdan, A. G.;
Kukharskaya, N. F.;
Chucheva, G. V.

Publication type:

Article

Charge-storage effects in a metal-insulator-semi-conductor structure containing germanium nano-crystals formed by rapid thermal annealing of an electron-beam evaporated germanium layer.

Published in:

Applied Physics A: Materials Science & Processing, 2004, v. 78, n. 8, p. 1181, doi. 10.1007/s00339-003-2482-0

By:

Heng, C. L.;
Tjiu, W. W.;
Finstad, T. G.

Publication type:

Article

Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes.

Published in:

Applied Physics A: Materials Science & Processing, 1996, v. 62, n. 3, p. 269

By:

Sağlam, M.;
Ayyıldız, E.;
Gümüş, A.;
Türüt, A.;
Efeoğlu, H.;
Tüzemen, S.

Publication type:

Article

APPEARANCE OF SEMICONDUCTING (DIELECTRIC) CONDUCTION IN POLYCRYSTALLINE HIGH-TEMPERATURE SUPERCONDUCTING CUPRATES AFTER HEAT TREATMENT.

Published in:

Armenian Journal of Physics, 2015, v. 8, n. 1, p. 1

By:

Nikoghosyan, S. K.;
Harutunyan, V. V.;
Baghdasaryan, V. S.;
Mughnetsyan, E. A.;
Zargaryan, E. G.;
Sarkisyan, A. G.

Publication type:

Article

Comparison between MIM and Schottky Diodes for Use in High Frequencies.

Published in:

International Review of Physics, 2010, v. 4, n. 6, p. 285

By:

Becharef, R.;
Souar, Z.;
Bassou, G.

Publication type:

Article

Determining the Hydrogen Concentration from the Photovoltage of Pd-Oxide-InP MIS Structures.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1303, doi. 10.1134/S1063782618100044

By:

Grebenshchikova, E. A.;
Salikhov, Kh. M.;
Sidorov, V. G.;
Shutaev, V. A.;
Yakovlev, Yu. P.

Publication type:

Article

Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies.

Published in:

Semiconductors, 2018, v. 52, n. 4, p. 420, doi. 10.1134/S1063782618040073

By:

Reddy, Baikadi Pranay Kumar;
Teja, Karri Babu Ravi;
Kandpal, Kavindra

Publication type:

Article

Charge density at the AlO/Si interface in Metal-lnsulator-Semiconductor devices: Semiclassical and quantum mechanical descriptions.

Published in:

Semiconductors, 2017, v. 51, n. 12, p. 1625, doi. 10.1134/S1063782617120089

By:

Hlali, Slah;
Hizem, Neila;
Kalboussi, Adel

Publication type:

Article

Conduction in titanium dioxide films and metal-TiO-Si structures.

Published in:

Semiconductors, 2016, v. 50, n. 8, p. 1015, doi. 10.1134/S1063782616080133

By:

Kalygina, V.;
Egorova, I.;
Prudaev, I.;
Tolbanov, O.

Publication type:

Article

Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high- K oxide/SiO/Si structure.

Published in:

Semiconductors, 2016, v. 50, n. 5, p. 671, doi. 10.1134/S1063782616050249

By:

Vexler, M.;
Grekhov, I.

Publication type:

Article

Capacitance-voltage characteristics of (Al/Ti)/AlO/ n-GaN MIS structures.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1035, doi. 10.1134/S1063782615080096

By:

Ivanov, P.;
Potapov, A.;
Nikolaev, A.;
Lundin, V.;
Sakharov, A.;
Tsatsulnikov, A.;
Afanas'ev, A.;
Romanov, A.;
Osachev, E.

Publication type:

Article

Effect of fluorine on the electrical properties of anodic oxide/InAs(111)A interface.

Published in:

Semiconductors, 2014, v. 48, n. 3, p. 307, doi. 10.1134/S1063782614030026

By:

Aksenov, M.;
Valisheva, N.;
Levtsova, T.;
Tereshchenko, O.

Publication type:

Article

Features of electron mobility in a thin silicon layer in an insulator-silicon-insulator structure.

Published in:

Semiconductors, 2012, v. 46, n. 4, p. 478, doi. 10.1134/S1063782612040148

By:

Leonov, A.;
Mokrushin, A.;
Omeljanovskaja, N.

Publication type:

Article

Electrical properties of germanium-based insulator-semiconductor structures with an insulating layer of polynucleotides, and their monomer components on the surface.

Published in:

Semiconductors, 2011, v. 45, n. 12, p. 1555, doi. 10.1134/S1063782611120165

By:

Yafyasov, A.;
Bakulev, V.;
Konorov, P.;
Bogevolnov, V.

Publication type:

Article

Silicon-on-insulator structures with a nitrogenated buried SiO layer: Preparation and properties.

Published in:

Semiconductors, 2011, v. 45, n. 3, p. 325, doi. 10.1134/S1063782611030201

By:

Tyschenko, I.;
Popov, V.

Publication type:

Article

Determination of the density of surface states at the semiconductor-insulator interface in a metal-insulator-semiconductor structure.

Published in:

Semiconductors, 2011, v. 45, n. 2, p. 174, doi. 10.1134/S1063782611020084

By:

Gulyamov, G.;
Sharibaev, N.

Publication type:

Article

Semiconductor surface potential relaxation in the MIS structure in the presence of convective currents in insulator and through its boundaries.

Published in:

Semiconductors, 2011, v. 45, n. 2, p. 188, doi. 10.1134/S1063782611020072

By:

Dmitriev, S.

Publication type:

Article

Intracenter excited state of copper in Cu-compensated InP.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 275, doi. 10.1134/S1063782609030026

By:

Melnik, V. A.;
Pribylov, N. N.;
Rembeza, S. I.;
Makarenko, Ph. V.

Publication type:

Article

Specific features of the metal-insulator conductivity transition in narrow-gap semiconductors of the MgAgAs structure type.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 131, doi. 10.1134/S1063782606020035

By:

Romaka, V. A.;
Stadnyk, Yu. V.;
Shelyapina, M. G.;
Fruchart, D.;
Chekurin, V. F.;
Romaka, L. P.;
Gorelenko, Yu. K.

Publication type:

Article

A manifestation of the tunneling conductivity of a thin-gate insulator in the generation kinetics of minority carriers in metal-insulator-semiconductor structures.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 190, doi. 10.1134/S1063782606020151

By:

Zhdan, A. G.;
Chucheva, G. V.;
Goldman, E. I.

Publication type:

Article