Works matching DE "MERCURY cadmium tellurides"

Results: 284

Formation and Characterization of the Boron Dicarbonyl Complex [B(CO)2]−.

Published in:

Angewandte Chemie, 2015, v. 127, n. 38, p. 11230, doi. 10.1002/ange.201503686

By:

Zhang, Qingnan;
Li, Wan ‐ Lu;
Xu, Cong ‐ Qiao;
Chen, Mohua;
Zhou, Mingfei;
Li, Jun;
Andrada, Diego M.;
Frenking, Gernot

Publication type:

Article

Progress in bulk cadmium mercury telluride over the last 25 years.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4380, doi. 10.1007/s10854-015-2939-x

By:

Capper, P.

Publication type:

Article

Measurement of intensity of the second optical harmonic in heteroepitaxial cadmium-mercury telluride structures.

Published in:

Measurement Techniques, 2010, v. 53, n. 6, p. 615, doi. 10.1007/s11018-010-9550-6

By:

Burlakov, I.;
Demin, A.;
Levin, G.;
Piskunov, N.;
Zabotnov, S.;
Kashuba, A.

Publication type:

Article

Admittance of barrier nanostructures based on MBE HgCdTe.

Published in:

Applied Nanoscience, 2022, v. 12, n. 3, p. 403, doi. 10.1007/s13204-020-01636-z

By:

Izhnin, I. I.;
Voitsekhovskii, A. V.;
Nesmelov, S. N.;
Dzyadukh, S. M.;
Dvoretsky, S. A.;
Mikhailov, N. N.;
Sidorov, G. Y.;
Yakushev, M. V.

Publication type:

Article

Simulation of Performance Parameters of Mercury Cadmium Telluride Infrared Photodetectors.

Published in:

Journal of Defense Sciences / Savunma Bilmleri Dergisi, 2012, v. 11, n. 1, p. 41

By:

KOÇER, Hasan

Publication type:

Article

The method for extracting defect levels in the MCT multilayer low-bandgap heterostructures.

Published in:

Opto-Electronics Review, 2024, v. 32, n. 1, p. 1, doi. 10.24425/opelre.2024.149182

By:

Majkowycz, Kinga;
Kopytko, Małgorzata;
Murawski, Krzysztof;
Martyniuk, Piotr

Publication type:

Article

MCT heterostructures for higher operating temperature infrared detectors designed in Poland.

Published in:

Opto-Electronics Review, 2023, v. 31, p. 1, doi. 10.24425/opelre.2023.144551

By:

Madejczyk, Paweł;
Gawron, Waldemar;
Sobieski, Jan;
Martyniuk, Piotr;
Rutkowski, Jarosław

Publication type:

Article

Thermal Effect of Laser Radiation on Photoconductive HgCdTe Detector.

Published in:

Lasers in Engineering (Old City Publishing), 2007, v. 17, n. 1/2, p. 101

By:

Li Xiu-Qiani;
Xiang-Ai Cheng;
Zhi-Guo Dou

Publication type:

Article

Modeling of dark current in semispherical quantum dot structures for infrared photodetection.

Published in:

Optical & Quantum Electronics, 2023, v. 55, n. 13, p. 1, doi. 10.1007/s11082-023-05283-w

By:

Ali, Nouran M.;
El-Batawy, Yasser M.

Publication type:

Article

J–V characteristics of dark current in truncated conical quantum dot infrared photodetectors (QDIPs).

Published in:

Optical & Quantum Electronics, 2023, v. 55, n. 6, p. 1, doi. 10.1007/s11082-023-04760-6

By:

Ali, Nouran M.;
El-Batawy, Yasser M.

Publication type:

Article

Langevin-like method for modelling the noise currents in HgCdTe barrier LWIR detectors.

Published in:

Optical & Quantum Electronics, 2017, v. 49, n. 3, p. 1, doi. 10.1007/s11082-017-0926-6

By:

Jóźwikowski, Krzysztof

Publication type:

Article

The numerical method for solving the transport equations in HgCdTe heterostructures using the non-equilibrium distribution functions.

Published in:

Optical & Quantum Electronics, 2017, v. 49, n. 3, p. 1, doi. 10.1007/s11082-017-0923-9

By:

Jóźwikowski, Krzysztof;
Jóźwikowska, Alina;
Nietopiel, Michał

Publication type:

Article

The method for calculation of carrier concentration in narrow-gap n-type doped HgCdTe structures.

Published in:

Optical & Quantum Electronics, 2017, v. 49, n. 3, p. 1, doi. 10.1007/s11082-017-0941-7

By:

Jóźwikowska, Alina;
Jóźwikowski, Krzysztof;
Suligowski, Mariusz;
Moszczyński, Paweł;
Nietopiel, Michał

Publication type:

Article

Analytical solution of the direct problem of ellipsometry for some profiles of optical constants of inhomogeneous layers.

Published in:

Optics & Spectroscopy, 2016, v. 121, n. 3, p. 431, doi. 10.1134/S0030400X16090186

By:

Shvets, V.

Publication type:

Article

Study of photovoltaic effect photovoltaic HgCdTe detector irradiated by spectral unrelated laser.

Published in:

Optics & Spectroscopy, 2011, v. 111, n. 2, p. 162, doi. 10.1134/S0030400X11080303

By:

Jiang, Tian;
Chengi, Xiang-ai;
Li, Li;
Jiang, Hou-man;
Lu, Qi-sheng

Publication type:

Article

Thermophoto-emf of hot carriers in γ-irradiated single crystals of Cadmium Mercury Tellurides.

Published in:

High Energy Chemistry, 2016, v. 50, n. 5, p. 344, doi. 10.1134/S0018143916050118

By:

Nurullaev, Yu.;
Barkhalov, B.

Publication type:

Article

Thermal electromotive force of hot carriers in γ-irradiated single crystals of cadmium mercury tellurides.

Published in:

High Energy Chemistry, 2013, v. 47, n. 3, p. 127, doi. 10.1134/S0018143913030107

By:

Nurullaev, Yu.;
Barkhalov, B.;
Novruzova, S.

Publication type:

Article

Method of investigation of galvanomagnetic properties of CdHgTe and CdHgTe/CdZnTe.

Published in:

Semiconductors, 2016, v. 50, n. 13, p. 1716, doi. 10.1134/S1063782616130030

By:

Golubyatnikov, V.;
Lysenko, A.;
Belov, A.;
Kanevskii, V.

Publication type:

Article

Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 915, doi. 10.1134/S1063782616070253

By:

Vasilyev, Yu.;
Mikhailov, N.;
Vasilyeva, G.;
Ivánov, Yu.;
Zakhar'in, A.;
Andrianov, A.;
Vorobiev, L.;
Firsov, D.;
Grigoriev, M.;
Antonov, A.;
Ikonnikov, A.;
Gavrilenko, V.

Publication type:

Article

Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 208, doi. 10.1134/S1063782616020160

By:

Mynbaev, K.;
Zablotsky, S.;
Shilyaev, A.;
Bazhenov, N.;
Yakushev, M.;
Marin, D.;
Varavin, V.;
Dvoretsky, S.

Publication type:

Article

Impurity-induced photoconductivity of narrow-gap Cadmium-Mercury-Telluride structures.

Published in:

Semiconductors, 2015, v. 49, n. 12, p. 1605, doi. 10.1134/S1063782615120106

By:

Kozlov, D.;
Rumyantsev, V.;
Morozov, S.;
Kadykov, A.;
Varavin, V.;
Mikhailov, N.;
Dvorestky, S.;
Gavrilenko, V.;
Teppe, F.

Publication type:

Article

Temperature dependence of the carrier lifetime in narrow-gap CdHgTe solid solutions: Radiative recombination.

Published in:

Semiconductors, 2015, v. 49, n. 9, p. 1170, doi. 10.1134/S1063782615090067

By:

Bazhenov, N.;
Mynbaev, K.;
Zegrya, G.

Publication type:

Article

Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 195, doi. 10.1134/S1063782614020134

By:

Izhnin, I.;
Izhnin, A.;
Mynbaev, K.;
Bazhenov, N.;
Fitsych, E.;
Yakushev, M.;
Mikhailov, N.;
Varavin, V.;
Dvoretsky, S.

Publication type:

Article

Study of lifetimes and photoconductivity relaxation in heterostructures with HgCdTe/CdHgTe quantum wells.

Published in:

Semiconductors, 2012, v. 46, n. 11, p. 1362, doi. 10.1134/S1063782612110139

By:

Morozov, S.;
Joludev, M.;
Antonov, A.;
Rumyantsev, V.;
Gavrilenko, V.;
Aleshkin, V.;
Dubinov, A.;
Mikhailov, N.;
Dvoretskiy, S.;
Drachenko, O.;
Winnerl, S.;
Schneider, H.;
Helm, M.

Publication type:

Article

Evidence of the third ( A) level of the mercury vacancy in CdHgTe.

Published in:

Semiconductors, 2012, v. 46, n. 7, p. 882, doi. 10.1134/S1063782612070093

By:

Gassan-zade, S.;
Strikha, M.;
Shepelskii, G.

Publication type:

Article

Optical transitions in CdHgTe-based quantum wells and their analysis with account for the actual band structure of the material.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 773, doi. 10.1134/S1063782612060061

By:

Bazhenov, N.;
Shilyaev, A.;
Mynbaev, K.;
Zegrya, G.

Publication type:

Article

Phenomenon of the inverse adsorption piezoelectric effect in CdTe and CdHgTe semiconductors.

Published in:

Semiconductors, 2012, v. 46, n. 2, p. 155, doi. 10.1134/S1063782612020091

By:

Fedyaeva, O.

Publication type:

Article

Mechanisms of recombination of nonequilibrium charge carriers in epitaxial CdxHg1− x Te ( x = 0.20–0.23) layers.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 130, doi. 10.1134/S1063782607020029

By:

Ikusov, D. G.;
Sizov, F. F.;
Staryi, S. V.;
Teterkin, V. V.

Publication type:

Article

EBIC study of resistive photosensitive elements based on HgCdTe.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 235, doi. 10.1134/S1063782607020236

By:

Vergeles, P. S.;
Krapukhin, V. V.;
Yakimov, E. B.

Publication type:

Article

Modification of Hg[sub 1 – ][sub x]Cd[sub x]Te Properties by Low-Energy Ions.

Published in:

Semiconductors, 2003, v. 37, n. 10, p. 1127, doi. 10.1134/1.1619507

By:

Mynbaev, K.D.;
Ivanov-Omskii, V.I.

Publication type:

Article

Molecular-Beam Epitaxy of Mercury–Cadmium–Telluride Solid Solutions on Alternative Substrates.

Published in:

Semiconductors, 2001, v. 35, n. 9, p. 1045, doi. 10.1134/1.1403569

By:

Sidorov, Yu. G.;
Dvoretskiı, S. A.;
Varavin, V. S.;
Mikhaılov, N. N.;
Yakushev, M. V.;
Sabinina, I. V.

Publication type:

Article

Charge Transport in HgCdTe-based n[sup +]–p Photodiodes.

Published in:

Semiconductors, 2001, v. 35, n. 7, p. 800, doi. 10.1134/1.1385716

By:

Gumenjuk-Sichevskaja, J. V.;
Sizov, F. F.;
Ovsyuk, V. N.;
Vasil’ev, V. V.;
Esaev, D. G.

Publication type:

Article

Metallic Conductivity over an Acceptor Band of Lightly Compensated Copper-Doped p-Hg[sub 0.78]Cd[sub 0.22]Te Crystals.

Published in:

Semiconductors, 2001, v. 35, n. 7, p. 777, doi. 10.1134/1.1385712

By:

Bogoboyashchiı, V. V.

Publication type:

Article

Fermi Level Pinning and Electrical Properties of Irradiated Cd[sub x]Hg[sub 1 – ][sub x]Te Alloys.

Published in:

Semiconductors, 2001, v. 35, n. 7, p. 784, doi. 10.1134/1.1385713

By:

Brudnyı, V. N.;
Grinyaev, S. N.

Publication type:

Article

Method for Determining the Stoichiometric Composition of a Mercury Cadmium Telluride Solid Solution from Capacitance–Voltage Characteristics.

Published in:

Semiconductors, 2001, v. 35, n. 5, p. 525, doi. 10.1134/1.1371615

By:

Ivankiv, I. M.;
Yafyasov, A. M.;
Bogevol’nov, V. B.;
Perepelkin, A. D.

Publication type:

Article

Far Infrared Stimulated and Spontaneous Radiation in Uniaxially Deformed Zero-Gap Hg[sub 1 – ][sub x]Cd[sub x]Te.

Published in:

Semiconductors, 2000, v. 34, n. 7, p. 763, doi. 10.1134/1.1188069

By:

Venger, E. F.;
Gasan-zade, S. G.;
Strikha, M. V.;
Staryı, S. V.;
Shepel’skiı, G. A.

Publication type:

Article

Photosensitivity of In–SiO[sub 2]–Cd[sub 0.28]Hg[sub 0.72]Te Structures with a Nontransparent Field Electrode.

Published in:

Semiconductors, 2000, v. 34, n. 7, p. 794, doi. 10.1134/1.1188075

By:

Ovsyuk, V. N.;
Vasil’ev, V. V.;
Mashukov, Yu. P.

Publication type:

Article

Study of the Effect of Graded Gap Epilayers on the Performance of Cd[sub x]Hg[sub 1 – ][sub x]Te Photodiodes.

Published in:

Semiconductors, 2000, v. 34, n. 7, p. 844

By:

Vasil’ev, V. V.;
Esaev, D. G.;
Kravchenko, A. F.;
Osadchiı, V. M.;
Suslyakov, A. O.

Publication type:

Article

Charge Carrier Mobility in n-Cd[sub x]Hg[sub 1 – ][sub x]Te Crystals Subjected to Dynamic Ultrasonic Stressing.

Published in:

Semiconductors, 2000, v. 34, n. 6, p. 644, doi. 10.1134/1.1188046

By:

Vlasenko, A. I.;
Olikh, Ya. M.;
Savkina, R. K.

Publication type:

Article

Electrophysical Properties of Hg[sub 1 – ][sub x]Cd[sub x]Te Crystals under Hydrostatic Pressure.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 32, doi. 10.1134/1.1187956

By:

Virt, I. V.;
Prozorovskiı, V. D.;
Tsyutsyura, D. I.

Publication type:

Article

Acoustostimulated activation of bound defects in CdHgTe alloys.

Published in:

Semiconductors, 1999, v. 33, n. 4, p. 398, doi. 10.1134/1.1187701

By:

Vlasenko, A. I.;
Olikh, Ya. M.;
Savkina, R. K.

Publication type:

Article

Developments and Process Improvements Leading to High-Quality and Large-Area HgCdTe LPE Detectors.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7046, doi. 10.1007/s11664-023-10543-2

By:

Vilela, Mauro F.;
Hogan, Jack;
Jones, Kelly;
Venzor, Gregory M.;
Goetz, Paul M.;
Seas, Michael;
Hampp, Andreas

Publication type:

Article

Infinite-Melt Vertical Liquid-Phase Epitaxy of HgCdTe from Hg Solution: from VLWIR to SWIR.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 9, p. 4731, doi. 10.1007/s11664-022-09810-5

By:

Vilela, Mauro F.;
Hogan, Jack;
Fennell, Brian T.;
Venzor, Gregory M.;
Goetz, Paul M.;
Baley, Diane L.;
Paloczi, George;
Hampp, Andreas

Publication type:

Article

Plasma Treatment for Surface Stabilization in InAs/GaSb Type-II Superlattice LWIR and VLWIR Photodetectors.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 9, p. 4689, doi. 10.1007/s11664-022-09703-7

By:

Lee, Hyun-Jin;
Kim, Young Chul;
Eom, Jun Ho;
Jung, Hyun Chul;
Kang, Ko-Ku;
Ryu, Seong Min;
Jang, Ahreum;
Lee, Tae Hee;
Kim, Jong Gi;
Kim, Young Ho;
Jung, Han

Publication type:

Article

Influence of the CdZnTe Substrate Thickness on the Response of HgCdTe Detectors Under Irradiation: Modeling of the Substrate Luminescence.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 11, p. 6918, doi. 10.1007/s11664-020-08237-0

By:

Pichon, Thibault;
Mouzali, Salima;
Boulade, Olivier;
Gravrand, Olivier;
Limousin, Olivier

Publication type:

Article

Space Application Requirement Breakdown and Sensor Concept Implementation for MCT-Based LWIR and VLWIR 2D High-Performance Focal Plane Detector Arrays at AIM.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 11, p. 6946, doi. 10.1007/s11664-020-08224-5

By:

Hanna, S.;
Bauer, A.;
Bitterlich, H.;
Eich, D.;
Finck, M.;
Figgemeier, H.;
Gross, W.;
Mahlein, K. M.;
Wegmann, A.

Publication type:

Article

Performance Limits of III–V Barrier Detectors.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 11, p. 6893, doi. 10.1007/s11664-020-08195-7

By:

Klipstein, P. C.;
Benny, Y.;
Cohen, Y.;
Fraenkel, N.;
Gliksman, S.;
Glozman, A.;
Hirsh, I.;
Langof, L.;
Lukomsky, I.;
Marderfeld, I.;
Milgrom, B.;
Nitzani, M.;
Rakhmilevich, D.;
Shkedy, L.;
Snapi, N.;
Shtrichman, I.;
Weiss, E.;
Yaron, N.

Publication type:

Article

A Calculation Method for Response Spectrum of Mercury Cadmium Telluride Infrared Focal Plane Arrays Detector.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 2, p. 1462, doi. 10.1007/s11664-019-07808-0

By:

Sun, Ting;
Ye, Zhenhua;
Liao, Qingjun;
Hu, Xiaoning

Publication type:

Article

MCT-Based High Performance Bispectral Detectors by AIM.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 10, p. 6074, doi. 10.1007/s11664-019-07177-8

By:

Eich, D.;
Ames, C.;
Breiter, R.;
Figgemeier, H.;
Hanna, S.;
Lutz, H.;
Mahlein, K. M.;
Schallenberg, T.;
Sieck, A.;
Wenisch, J.

Publication type:

Article

Microstructural Characterization of Defects and Chemical Etching for HgCdSe/ZnTe/Si (211) Heterostructures.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 1, p. 571, doi. 10.1007/s11664-018-6737-0

By:

Vaghayenegar, M.;
Doyle, K. J.;
Trivedi, S.;
Wijewarnasuriya, P.;
Smith, David J.

Publication type:

Article