Works matching DE "MERCURY cadmium tellurides"
Results: 283
Effective Band Gap of CdHgTe Heteroepitaxial Structures Grown by Molecular Beam and Liquid Phase Epitaxy.
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- Journal of Communications Technology & Electronics, 2024, v. 69, n. 4, p. 211, doi. 10.1134/S1064226924700438
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- Article
Reviewers–2024.
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- American Journal of Respiratory & Critical Care Medicine, 2025, v. 211, n. 3, p. 533, doi. 10.1164/rccm.2024ReviewersList
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- Article
An effective restriction theorem via wall-crossing and Mercat's conjecture.
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- Mathematische Zeitschrift, 2022, v. 301, n. 4, p. 4175, doi. 10.1007/s00209-022-03036-1
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Discrete Riemann surfaces: Linear discretization and its convergence.
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- Journal für die Reine und Angewandte Mathematik, 2016, v. 2016, n. 720, p. 217, doi. 10.1515/crelle-2014-0065
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- Article
Wet Chemical Methods of HgCdTe Surface Treatment.
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- Journal of Structural Chemistry, 2023, v. 64, n. 3, p. 519, doi. 10.1134/S0022476623030150
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- Article
Broadband long-wave infrared high-absorption of active materials through hybrid plasmonic resonance modes.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03817-5
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- Article
Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells.
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- Journal of Experimental & Theoretical Physics, 2018, v. 127, n. 6, p. 1125, doi. 10.1134/S1063776118100035
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Optoelectronic performance prediction of HgCdTe homojunction photodetector in long wave infrared spectral region using traditional simulations and machine learning models.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-79727-y
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- Article
Chaos in photovoltaic HgCdTe detectors under laser irradiation.
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- Applied Physics B: Lasers & Optics, 2002, v. 75, n. 6/7, p. 667, doi. 10.1007/s00340-002-1015-4
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- Article
Recovery of Tellurium from Waste Anode Slime Containing High Copper and High Tellurium of Copper Refineries.
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- Sustainability (2071-1050), 2023, v. 15, n. 15, p. 11919, doi. 10.3390/su151511919
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- Article
Exploiting spatio‐spectral aberrations for rapid synchrotron infrared imaging.
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- Journal of Synchrotron Radiation, 2021, v. 28, n. 5, p. 1616, doi. 10.1107/S1600577521007104
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- Article
Advanced thin conformal Al<sub>2</sub>O<sub>3</sub> films for high aspect ratio mercury cadmium telluride sensors.
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- Optical Engineering, 2012, v. 51, n. 10, p. 1, doi. 10.1117/1.OE.51.10.104003
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- Article
Temperature dependence on photosensitive area extension in mercury cadmium telluride photodiodes using laser beam induced current.
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- Optical Engineering, 2012, v. 51, n. 3, p. 036401-1, doi. 10.1117/1.OE.51.3.036401
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- Article
Size, weight, and power reduction of mercury cadmium telluride infrared detection modules.
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- Optical Engineering, 2011, v. 50, n. 6, p. 061010, doi. 10.1117/1.3578405
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- Article
Reply to Santos et al. : Open Up the Lung and Keep the Lung Vessels Open.
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- American Journal of Respiratory & Critical Care Medicine, 2025, v. 211, n. 2, p. 290, doi. 10.1164/rccm.202410-2078LE
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Mercury Cadmium Telluride: Growth, Properties and Applications.
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- 2011
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- Book Review
Critical Thickness of Exponentially and Linearly Graded HgCdTe/CdZnTe.
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- Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1690, doi. 10.1007/s11664-009-0801-8
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Performance and Modeling of the MWIR HgCdTe Electron Avalanche Photodiode.
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- Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1579, doi. 10.1007/s11664-009-0684-8
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- Article
Characterization of Dislocations in HgCdTe Heteroepitaxial Layers Using a New Substrate Removal Technique.
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- Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1746, doi. 10.1007/s11664-009-0771-x
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- Article
The Effect of Wet Etching on Surface Properties of HgCdTe.
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- Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1781, doi. 10.1007/s11664-009-0844-x
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HgCdTe p-on- n Focal-Plane Array Fabrication Using Arsenic Incorporation During MBE Growth.
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- Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1684, doi. 10.1007/s11664-009-0794-3
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Experimental Performance and Monte Carlo Modeling of Long Wavelength Infrared Mercury Cadmium Telluride Avalanche Photodiodes.
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- Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1628, doi. 10.1007/s11664-009-0827-y
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- Article
Flexibility of p– n Junction Formation from SWIR to LWIR Using MBE-Grown Hg<sub>(1– x)</sub>Cd<sub> x</sub>Te on Si Substrates.
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- Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1755, doi. 10.1007/s11664-009-0793-4
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- Article
Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on- n and Different n-on- p Technologies on LPE HgCdTe.
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- Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1733, doi. 10.1007/s11664-009-0795-2
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Low-Noise Mid-Wavelength Infrared Avalanche Photodiodes.
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- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1764, doi. 10.1007/s11664-008-0542-0
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- Article
Electromagnetic Modeling of n-on-p HgCdTe Back-Illuminated Infrared Photodiode Response.
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- Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1205, doi. 10.1007/s11664-008-0478-4
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- Article
Morphology of Inductively Coupled Plasma Processed HgCdTe Surfaces.
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- Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1225, doi. 10.1007/s11664-008-0467-7
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- Article
Traces of HgCdTe Defects as Revealed by Etch Pits.
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- Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1241, doi. 10.1007/s11664-008-0465-9
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- Article
Helium-Plasma-Prepared (111)A HgCdTe and (211)B InSb.
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- Journal of Electronic Materials, 2008, v. 37, n. 2, p. 152, doi. 10.1007/s11664-007-0309-z
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- Article
Realization of Very Long Wavelength Infrared Photovoltaic Detector Arrays on Mercury Cadmium Telluride Epitaxial Layers Grown on Si Substrates.
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- Journal of Electronic Materials, 2006, v. 35, n. 11, p. 2056, doi. 10.1007/s11664-006-0313-8
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Investigation of HgTe-HgCdTe Superlattices by High-Resolution X-ray Diffraction.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1481, doi. 10.1007/s11664-006-0288-5
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- Article
Full-Wafer Spatial Mapping of Macrodefects on HgCdTe Epitaxial Wafers Grown by MBE.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1503, doi. 10.1007/s11664-006-0292-9
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- Article
p to n Conversion in SWIR Mercury Cadmium Telluride with Ion Milling.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1470, doi. 10.1007/s11664-006-0286-7
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Hydrogenation of HgCdTe Epilayers on Si Substrates Using Glow Discharge Plasma.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1465, doi. 10.1007/s11664-006-0285-8
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Examination of the Effects of High-density Plasmas on the Surface of HgCdTe.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1461, doi. 10.1007/s11664-006-0284-9
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- Article
The Structure of the Si (211) Surface.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1449, doi. 10.1007/s11664-006-0282-y
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Investigation of HgCdTe Surface Films and Their Removal.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1443, doi. 10.1007/s11664-006-0281-z
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- Article
Surface Structure of (111)A HgCdTe.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1434, doi. 10.1007/s11664-006-0280-0
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A Comparison of Gamma Radiation Effects on Bromine- and Hydrazine-Treated HgCdTe Photodiodes.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1429, doi. 10.1007/s11664-006-0279-6
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- Article
Thermal Cycling-Induced Changes in Excess Dark Current in Very Long-Wavelength HgCdTe Photodiodes at Low Temperature.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1411, doi. 10.1007/s11664-006-0276-9
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- Article
VLWIR HgCdTe Detector Current-Voltage Analysis.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1403, doi. 10.1007/s11664-006-0275-x
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HgCdTe Negative Luminescence Devices for Cold Shielding and Other Applications.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1391, doi. 10.1007/s11664-006-0273-z
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- Article
Effects of Hydrogen on Majority Carrier Transport and Minority Carrier Lifetimes in Long-Wavelength Infrared HgCdTe on Si.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1385, doi. 10.1007/s11664-006-0272-0
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- Article
Passivation Effect on Optical and Electrical Properties of Molecular Beam Epitaxy-Grown HgCdTe/CdTe/Si Layers.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1379, doi. 10.1007/s11664-006-0271-1
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Minority Carrier Lifetimes in HgCdTe Alloys.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1369, doi. 10.1007/s11664-006-0270-2
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- Article
Accurate Measurement of Composition, Carrier Concentration, and Photoconductive Lifetime in Hg<sub>1-x</sub>Cd<sub>x</sub> Te Grown by Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1360, doi. 10.1007/s11664-006-0269-8
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- Article
p-Type HgTe/CdTe Superlattices for Very-Long Wavelength Infrared Detectors.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1341, doi. 10.1007/s11664-006-0265-z
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- Article
High-Quality Large-Area MBE HgCdTe/Si.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1283, doi. 10.1007/s11664-006-0255-1
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- Article
Current Status of Large-Area MOVPE Growth of HgCdTe Device Heterostructures for Infrared Focal Plane Arrays.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1275, doi. 10.1007/s11664-006-0254-2
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- Article
Influence of Substrate Orientation on the Growth of HgCdTe by Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1214, doi. 10.1007/s11664-006-0243-5
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- Article