Works matching DE "MEMRISTORS"

Results: 1423

Fabrication of nano memory using memristor for artificial intelligence.

Published in:

International Journal of Electronics Letters, 2025, v. 13, n. 2, p. 186, doi. 10.1080/21681724.2024.2444654

By:

Nanoti, N. G.;
Kshirsagar, U.A.;
Choudhury, Bikash Dev

Publication type:

Article

ALD‐Assisted VO2 for Memristor Application.

Published in:

Advanced Engineering Materials, 2025, v. 27, n. 10, p. 1, doi. 10.1002/adem.202402614

By:

Peng, Jun;
Hensel, Daniel;
Venugopal, Rakshith;
Rave, Lucas;
Schormann, Colin;
Koch, Sebastian;
Blick, Robert H.;
Zierold, Robert

Publication type:

Article

Interface engineering for enhanced memristive devices and neuromorphic computing applications.

Published in:

International Materials Reviews, 2025, v. 70, n. 3, p. 205, doi. 10.1177/09506608251318108

By:

Xiao, Ming;
Shen, Daozhi;
Huang, Jijie

Publication type:

Article

Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors.

Published in:

NPJ 2D Materials & Applications, 2025, v. 9, n. 1, p. 1, doi. 10.1038/s41699-025-00566-0

By:

Völkel, Lukas;
Ahmad, Rana Walied;
Bestaeva, Alana;
Braun, Dennis;
Cruces, Sofia;
Lee, Jimin;
Pasko, Sergej;
Krotkus, Simonas;
Heuken, Michael;
Menzel, Stephan;
Lemme, Max C.

Publication type:

Article

Memristor-Controlled Reconfigurable N-path Filter Structure Design and Comparison.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 9, p. 1858, doi. 10.3390/electronics14091858

By:

Yang, Fan;
Wang, Shiwei;
Serb, Alex;
Prodromakis, Themis

Publication type:

Article

Neuron circuit made of a single locally-active memristor.

Published in:

Modern Physics Letters B, 2025, v. 39, n. 16, p. 1, doi. 10.1142/S0217984925500423

By:

Yan, Yan;
Jin, Peipei;
Shi, Jiaping;
Wang, Guangyi;
Liang, Yan;
Dong, Yujiao;
Chen, Long

Publication type:

Article

Effects of AlOx Sub‐Oxide Layer on Conductance Training of Passive Memristor for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400651

By:

Xie, Qin;
Pan, Xinqiang;
Luo, Wenbo;
Shuai, Yao;
Wang, Yi;
Tong, Junde;
Zhao, Zebin;
Wu, Chuangui;
Zhang, Wanli

Publication type:

Article

Ion Intercalation‐Mediated MoS2 Conductance Switching for Highly Energy‐Efficient Memristor Synapse.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400633

By:

Zhao, Bin;
Zhao, Xuan;
Xun, Xiaochen;
Gao, Fangfang;
Li, Qi;
Sun, Jiayi;
Ouyang, Tian;
Liao, Qingliang;
Zhang, Yue

Publication type:

Article

Neuron‐Inspired Biomolecular Memcapacitors Formed Using Droplet Interface Bilayer Networks.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 6, p. 1, doi. 10.1002/aelm.202400644

By:

Segars, Braydon;
Rosenberg, Kyle;
Shrestha, Sarita;
Maraj, Joshua J.;
Sarles, Stephen A.;
Freeman, Eric

Publication type:

Article

State estimation of memristor-based recurrent neural networks with time-varying delays based on passivity theory.

Published in:

Complexity, 2014, v. 19, n. 4, p. 32, doi. 10.1002/cplx.21482

By:

Rakkiyappan, R.;
Chandrasekar, A.;
Laksmanan, S.;
Park, Ju H.

Publication type:

Article

Truly Electroforming-Free and Low-Energy Memristors with Preconditioned Conductive Tunneling Paths.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 35, p. n/a, doi. 10.1002/adfm.201702010

By:

Yoon, Jung Ho;
Zhang, Jiaming;
Ren, Xiaochen;
Wang, Zhongrui;
Wu, Huaqiang;
Li, Zhiyong;
Barnell, Mark;
Wu, Qing;
Lauhon, Lincoln J.;
Xia, Qiangfei;
Yang, J. Joshua

Publication type:

Article

Ions Matter: Description of the Anomalous Electronic Behavior in Methylammonium Lead Halide Perovskite Devices.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 16, p. n/a, doi. 10.1002/adfm.201606584

By:

Game, Onkar S.;
Buchsbaum, Gabriel J.;
Zhou, Yuanyuan;
Padture, Nitin P.;
Kingon, Angus I.

Publication type:

Article

A Bamboo-Like GaN Microwire-Based Piezotronic Memristor.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 29, p. 5307, doi. 10.1002/adfm.201600962

By:

Liu, Haitao;
Hua, Qilin;
Yu, Ruomeng;
Yang, Yuchao;
Zhang, Taiping;
Zhang, Yingjiu;
Pan, Caofeng

Publication type:

Article

High-Speed and Low-Energy Nitride Memristors.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 29, p. 5290, doi. 10.1002/adfm.201600680

By:

Choi, Byung Joon;
Torrezan, Antonio C.;
Strachan, John Paul;
Kotula, P. G.;
Lohn, A. J.;
Marinella, Matthew J.;
Li, Zhiyong;
Williams, R. Stanley;
Yang, J. Joshua

Publication type:

Article

Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 40, p. 6414, doi. 10.1002/adfm.201500865

By:

Siemon, Anne;
Breuer, Thomas;
Aslam, Nabeel;
Ferch, Sebastian;
Kim, Wonjoo;
van den Hurk, Jan;
Rana, Vikas;
Hoffmann‐Eifert, Susanne;
Waser, Rainer;
Menzel, Stephan;
Linn, Eike

Publication type:

Article

How Does Moisture Affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories?

Published in:

Advanced Functional Materials, 2015, v. 25, n. 32, p. 5117, doi. 10.1002/adfm.201501517

By:

Messerschmitt, Felix;
Kubicek, Markus;
Rupp, Jennifer L. M.

Publication type:

Article

Biorealistic Implementation of Synaptic Functions with Oxide Memristors through Internal Ionic Dynamics.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 27, p. 4290, doi. 10.1002/adfm.201501427

By:

Du, Chao;
Ma, Wen;
Chang, Ting;
Sheridan, Patrick;
Lu, Wei D.

Publication type:

Article

Donor-Induced Performance Tuning of Amorphous SrTiO3 Memristive Nanodevices: Multistate Resistive Switching and Mechanical Tunability.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 21, p. 3172, doi. 10.1002/adfm.201501019

By:

Nili, Hussein;
Walia, Sumeet;
Kandjani, Ahmad Esmaielzadeh;
Ramanathan, Rajesh;
Gutruf, Philipp;
Ahmed, Taimur;
Balendhran, Sivacarendran;
Bansal, Vipul;
Strukov, Dmitri B.;
Kavehei, Omid;
Bhaskaran, Madhu;
Sriram, Sharath

Publication type:

Article

Self-Limited Switching in Ta2O5/TaO x Memristors Exhibiting Uniform Multilevel Changes in Resistance.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 10, p. 1527, doi. 10.1002/adfm.201403621

By:

Kim, Kyung Min;
Lee, Seung Ryul;
Kim, Sungho;
Chang, Man;
Hwang, Cheol Seong

Publication type:

Article

Memristors: Memristor Kinetics and Diffusion Characteristics for Mixed Anionic-Electronic SrTiO3-δ Bits: The Memristor-Based Cottrell Analysis Connecting Material to Device Performance (Adv. Funct. Mater. 47/2014).

Published in:

Advanced Functional Materials, 2014, v. 24, n. 47, p. 7447, doi. 10.1002/adfm.201470305

By:

Messerschmitt, Felix;
Kubicek, Markus;
Schweiger, Sebastian;
Rupp, Jennifer L.M.

Publication type:

Article

Memristor Kinetics and Diffusion Characteristics for Mixed Anionic-Electronic SrTiO3-δ Bits: The Memristor-Based Cottrell Analysis Connecting Material to Device Performance.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 47, p. 7448, doi. 10.1002/adfm.201402286

By:

Messerschmitt, Felix;
Kubicek, Markus;
Schweiger, Sebastian;
Rupp, Jennifer L.M.

Publication type:

Article

Nanoscale Resistive Switching in Amorphous Perovskite Oxide ( a-SrTiO3) Memristors.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 43, p. 6741, doi. 10.1002/adfm.201401278

By:

Nili, Hussein;
Walia, Sumeet;
Balendhran, Sivacarendran;
Strukov, Dmitri B.;
Bhaskaran, Madhu;
Sriram, Sharath

Publication type:

Article

Engineering the resistive switching properties of 2D WS2 memristor: role of band gap.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 3, p. 1, doi. 10.1007/s10854-022-09612-9

By:

Cao, Qing;
Zou, Pengfei;
Li, Pengcheng;
Xiong, Limiao;
Bi, Hailin;
Wu, Jun

Publication type:

Article

Synaptic plasticity in electro-polymerized PEDOT based memristors for neuromorphic application.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 36, p. 27053, doi. 10.1007/s10854-022-09368-2

By:

Saini, Nitish;
Bisht, Arti;
Patra, Asit;
Kumar, Ajeet

Publication type:

Article

Formation of a Ti → TiO2-graded layer and its effect on the memristive properties of TiOx(/Ti/TiOx) structures.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 10, p. 7423, doi. 10.1007/s10854-022-07864-z

By:

Gul, Melik;
Efeoglu, Hasan

Publication type:

Article

Effects of Ar+ irradiation on the performance of memristor based on single-crystalline LiNbO3 thin film.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 15, p. 20817, doi. 10.1007/s10854-021-06595-x

By:

Xie, Qin;
Pan, Xinqiang;
Luo, Wenbo;
Shuai, Yao;
Wu, Chuangui;
Wang, Jiejun;
Huang, Shitian;
Luo, Wen;
Zhang, Wanli

Publication type:

Article

Nonvolatile resistive switching characteristics based on Ni–Al LDHs and its electronic synapse application.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 8, p. 9938, doi. 10.1007/s10854-021-05651-w

By:

Zhao, Enming;
Liu, Guangyu;
Xing, Chuanxi;
Liu, Xiaodan;
Wang, Chen;
Zhu, Xiaodong;
Yang, Yanting;
Liu, Shuo;
Huang, Yi

Publication type:

Article

Memristors based on thermal copper oxide.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 10, p. 7445, doi. 10.1007/s10854-020-02963-1

By:

Ortega-Reyes, L.;
Ávila-García, A.

Publication type:

Article

Characteristics of analog memristor on thin-film Pt/Co0.2TiO3.2/ITO.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 7, p. 5692, doi. 10.1007/s10854-020-03136-w

By:

Góis, Meirielle M.;
Macêdo, Marcelo A.

Publication type:

Article

Morphological and electrical characterizations of dip coated porous TiO2 thin films with different concentrations of thiourea additives for resistive switching applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 17, p. 15928, doi. 10.1007/s10854-019-01944-3

By:

Roy, S.;
Tripathy, N.;
Sahu, P. K.;
Kar, J. P.

Publication type:

Article

Compositional variation of structural, electrical and magnetic properties of Dy substituted Ni-Co spinel ferrite.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 10, p. 10484, doi. 10.1007/s10854-016-5157-2

By:

Kadam, A.;
Rajpure, K.

Publication type:

Article

Resistive switching memory behaviours of MoSe nano-islands array.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 7, p. 7609, doi. 10.1007/s10854-016-4744-6

By:

Zhang, Xuejiao;
Qiao, Haixia;
Nian, Xiaofeng;
Huang, Yong;
Pang, Xiaofeng

Publication type:

Article

Nonvolatile bio-memristor fabricated with natural bio-materials from spider silk.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 4, p. 3957, doi. 10.1007/s10854-015-4248-9

By:

Sun, Bai;
Liang, Dandan;
Li, Xiaoping;
Chen, Peng

Publication type:

Article

Overview of emerging memristor families from resistive memristor to spintronic memristor.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4618, doi. 10.1007/s10854-015-2848-z

By:

Wang, Lei;
Yang, CiHui;
Wen, Jing;
Gai, Shan;
Peng, YuanXiu

Publication type:

Article

Polymer‐based neuromorphic devices: resistive switches and organic electrochemical transistors.

Published in:

Polymer International, 2023, v. 72, n. 7, p. 609, doi. 10.1002/pi.6520

By:

Yamamoto, Shunsuke

Publication type:

Article

Passivity and passification of stochastic impulsive memristor-based piecewise linear system with mixed delays.

Published in:

International Journal of Robust & Nonlinear Control, 2015, v. 25, n. 4, p. 610, doi. 10.1002/rnc.3112

By:

Wen, S.P.;
Zeng, Z.G.;
Huang, T.W.;
Li, C.J.

Publication type:

Article

Effect of Nitrogen Ion Diffusion Jumps in Nanometer-Sized Si3N4 Memristors Investigated by Low-Frequency Noise Spectroscopy.

Published in:

Fluctuation & Noise Letters, 2024, v. 23, n. 1, p. 1, doi. 10.1142/S0219477524500147

By:

Yakimov, Arkady V.;
Klyuev, Alexey V.;
Filatov, Dmitry O.;
Gorshkov, Oleg N.;
Antonov, Dmitry A.;
Mikhaylov, Alexey N.;
Kochergin, Viktor S.;
Vasileiadis, Nikolaos;
Dimitrakis, Panagiotis

Publication type:

Article

Memristor Equations: Incomplete Physics and Undefined Passivity/Activity.

Published in:

Fluctuation & Noise Letters, 2017, v. 16, n. 4, p. -1, doi. 10.1142/S0219477517710018

By:

Sundqvist, Kyle M.;
Ferry, David K.;
Kish, Laszlo B.

Publication type:

Article

Can We Still Find an Ideal Memristor?

Published in:

Magnetism (2673-8724), 2024, v. 4, n. 3, p. 200, doi. 10.3390/magnetism4030014

By:

Wang, Frank Zhigang

Publication type:

Article

Decoupling Volatile and Nonvolatile Response in Reliable Halide Perovskite Memristors.

Published in:

Small Structures, 2025, v. 6, n. 1, p. 1, doi. 10.1002/sstr.202400380

By:

Pendyala, Naresh‐Kumar;
Gonzales, Cedric;
Guerrero, Antonio

Publication type:

Article

Lead‐Free Perovskites and Metal Halides for Resistive Switching Memory and Artificial Synapse.

Published in:

Small Structures, 2024, v. 5, n. 6, p. 1, doi. 10.1002/sstr.202300524

By:

Zhang, Bo Wei;
Lin, Chun‐Ho;
Nirantar, Shruti;
Han, EQ;
Zhang, Yurou;
Wang, Zitong;
Lyu, Miaoqiang;
Wang, Lianzhou

Publication type:

Article

A Novel Passive Circuit Emulator for a Current-Controlled Memristor.

Published in:

Active & Passive Electronic Components, 2021, p. 1, doi. 10.1155/2021/5582774

By:

Barboni, Leonardo

Publication type:

Article

On the Memristances, Parameters, and Analysis of the Fractional Order Memristor.

Published in:

Active & Passive Electronic Components, 2018, p. 1, doi. 10.1155/2018/3408480

By:

Banchuin, Rawid

Publication type:

Article

A Novel Floating Memristor Emulator with Minimal Components.

Published in:

Active & Passive Electronic Components, 2017, p. 1, doi. 10.1155/2017/1609787

By:

Li, Zhijun;
Zeng, Yicheng;
Ma, Minglin

Publication type:

Article

A memristor-based pixel implementing light-to-resistance conversion.

Published in:

Optical Engineering, 2016, v. 55, n. 2, p. 1, doi. 10.1117/1.OE.55.2.020501

By:

Olumodeji, Olufemi A.;
Bramanti, Alessandro P.;
Gottardi, Massimo;
Iannotta, Salvatore

Publication type:

Article

A Single Switch High Step-Up DC-DC Converter Based on Tri-Winding Coupled Inductor for Renewable Energy Applications.

Published in:

International Transactions on Electrical Energy Systems, 2022, p. 1, doi. 10.1155/2022/4175292

By:

Hosseinzadehlish, Mana;
Hashemzadeh, Seyed Majid;
Pourjafar, Saeed;
Babaei, Ebrahim

Publication type:

Article

Fractional order memcapacitive neuromorphic elements reproduce and predict neuronal function.

Published in:

Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-55784-1

By:

Vazquez-Guerrero, Patricia;
Tuladhar, Rohisha;
Psychalinos, Costas;
Elwakil, Ahmed;
Chacron, Maurice J.;
Santamaria, Fidel

Publication type:

Article

Strategy to improve synaptic behavior of ion-actuated synaptic transistors—the use of ion blocking layer to improve state retention.

Published in:

Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-55681-7

By:

Jeon, Seonuk;
Tessler, Nir;
Kim, Nayeon;
Hong, Eunryeong;
Kim, Hyun Wook;
Woo, Jiyong

Publication type:

Article

Analog monolayer SWCNTs-based memristive 2D structure for energy-efficient deep learning in spiking neural networks.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-48529-z

By:

Abunahla, Heba;
Abbas, Yawar;
Gebregiorgis, Anteneh;
Waheed, Waqas;
Mohammad, Baker;
Hamdioui, Said;
Alazzam, Anas;
Rezeq, Moh'd

Publication type:

Article

Effect of oxygen vacancy and Si doping on the electrical properties of Ta2O5 in memristor characteristics.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-43888-z

By:

Islam, Md. Sherajul;
Lee, Jonghoon;
Ganguli, Sabyasachi;
Roy, Ajit K.

Publication type:

Article