Works about MAGNETIC tunnelling

Results: 376

2D Spintronics for Neuromorphic Computing with Scalability and Energy Efficiency.

Published in:

Journal of Low Power Electronics & Applications, 2025, v. 15, n. 2, p. 16, doi. 10.3390/jlpea15020016

By:

Plummer, Douglas Z.;
D'Alessandro, Emily;
Burrowes, Aidan;
Fleischer, Joshua;
Heard, Alexander M.;
Wu, Yingying

Publication type:

Article

Low‐Energy Spin Manipulation Using Ferromagnetism.

Published in:

Annalen der Physik, 2024, v. 536, n. 12, p. 1, doi. 10.1002/andp.202400226

By:

Desbuis, Valentin;
Lacour, Daniel;
Tiusan, Coriolan;
Weber, Wolfgang;
Hehn, Michel

Publication type:

Article

Spin‐Torque Diodes: From Fundamental Research to Applications.

Published in:

Annalen der Physik, 2020, v. 532, n. 6, p. 1, doi. 10.1002/andp.201900460

By:

Skirdkov, Petr N.;
Zvezdin, Konstatin A.

Publication type:

Article

Large, Temperature-Tunable Low-Field Magnetoresistance in La0.7Sr0.3MnO3:NiO Nanocomposite Films Modulated by Microstructures.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 34, p. 5393, doi. 10.1002/adfm.201400735

By:

Ning, Xingkun;
Wang, Zhanjie;
Zhang, Zhidong

Publication type:

Article

The influence of an elastic uniaxial deformation of a medium-carbon steel on its magnetostriction in the longitudinal and transverse directions.

Published in:

Russian Journal of Nondestructive Testing, 2013, v. 49, n. 10, p. 584, doi. 10.1134/S1061830913100057

By:

Gorkunov, E.;
Subachev, Yu.;
Povolotskaya, A.;
Zadvorkin, S.

Publication type:

Article

Вплив домішок на електрофізичні властивості магнетного тунельного переходу

Published in:

Metallophysics & Advanced Technologies / Metallofizika i Novejsie Tehnologii, 2020, v. 42, n. 7, p. 919, doi. 10.15407/mfint.42.07.0919

By:

Бурлаков, В. О.;
Погорелов, О. Є.;
Філатов, О. В.

Publication type:

Article

WinEdge: Low-Power Winograd CNN Execution with Transposed MRAM for Edge Devices.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 12, p. 2485, doi. 10.3390/electronics14122485

By:

Ashtari Gargari, Milad;
Tabrizchi, Sepehr;
Roohi, Arman

Publication type:

Article

Compact Modeling and Exploration of the Light Metal Insertion Effect for a Voltage-Controlled Spin–Orbit Torque Magnetic Tunnel Junction.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 7, p. 1272, doi. 10.3390/electronics14071272

By:

Li, Weixiang;
Lu, Jiaqi;
Wang, Chengzhi;
Wang, Dongsheng

Publication type:

Article

Optimization of Bifurcated Switching by Enhanced Synthetic Antiferromagnetic Layer.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 23, p. 4771, doi. 10.3390/electronics13234771

By:

Sun, Yihui;
Meng, Fantao;
Gong, Junlu;
Gao, Yang;
Chen, Ruofei;
Zhao, Lei;
Zeng, Dinggui;
Fu, Ting;
He, Weiming;
Wang, Yaohua

Publication type:

Article

Enhancing Security and Power Efficiency of Ascon Hardware Implementation with STT-MRAM.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 17, p. 3519, doi. 10.3390/electronics13173519

By:

Roussel, Nathan;
Potin, Olivier;
Di Pendina, Grégory;
Dutertre, Jean-Max;
Rigaud, Jean-Baptiste

Publication type:

Article

Polymorphic Hybrid CMOS-MTJ Logic Gates for Hardware Security Applications.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 4, p. 902, doi. 10.3390/electronics12040902

By:

Kumar, Rajat;
Divyanshu, Divyanshu;
Khan, Danial;
Amara, Selma;
Massoud, Yehia

Publication type:

Article

An Approach towards Designing Logic Locking Using Shape-Perpendicular Magnetic Anisotropy-Double Layer MTJ.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 3, p. 479, doi. 10.3390/electronics12030479

By:

Divyanshu, Divyanshu;
Kumar, Rajat;
Khan, Danial;
Amara, Selma;
Massoud, Yehia

Publication type:

Article

A Reliability-Enhanced Differential Sensing Amplifier for Hybrid CMOS/MTJ Logic Circuits.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 2, p. 447, doi. 10.3390/electronics12020447

By:

Wang, Chengzhi;
Yang, Tianqi;
Han, Min;
Wang, Dongsheng

Publication type:

Article

Design of VGSOT-MTJ-Based Logic Locking for High-Speed Digital Circuits.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 21, p. 3537, doi. 10.3390/electronics11213537

By:

Divyanshu, Divyanshu;
Kumar, Rajat;
Khan, Danial;
Amara, Selma;
Massoud, Yehia

Publication type:

Article

Bitwise Logical Operations in VCMA-MRAM.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 18, p. N.PAG, doi. 10.3390/electronics11182805

By:

Gulafshan, Gulafshan;
Amara, Selma;
Kumar, Rajat;
Khan, Danial;
Fariborzi, Hossein;
Massoud, Yehia

Publication type:

Article

Spin Orbit Torque-Assisted Magnetic Tunnel Junction-Based Hardware Trojan.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 11, p. 1753, doi. 10.3390/electronics11111753

By:

Kumar, Rajat;
Divyanshu, Divyanshu;
Khan, Danial;
Amara, Selma;
Massoud, Yehia

Publication type:

Article

Embedded Memories for Cryogenic Applications.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 1, p. 61, doi. 10.3390/electronics11010061

By:

Garzón, Esteban;
Teman, Adam;
Lanuzza, Marco

Publication type:

Article

Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlO x -Based Resistive Switching Memory Devices with Magneto-Resistive Responses.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 20, p. 2525, doi. 10.3390/electronics10202525

By:

Hong, Jhen-Yong;
Chen, Chun-Yen;
Ling, Dah-Chin;
Martínez, Isidoro;
González-Ruano, César;
Aliev, Farkhad G.

Publication type:

Article

Ultralow Voltage FinFET- Versus TFET-Based STT-MRAM Cells for IoT Applications.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 15, p. 1756, doi. 10.3390/electronics10151756

By:

Garzón, Esteban;
Lanuzza, Marco;
Taco, Ramiro;
Strangio, Sebastiano

Publication type:

Article

Analysis of State-of-the-Art Spin-Transfer-Torque Nonvolatile Flip-Flops Considering Restore Yield in the Near/Sub-Threshold Voltage Region.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 12, p. 2118, doi. 10.3390/electronics9122118

By:

Choi, Gwang Hui;
Na, Taehui

Publication type:

Article

Hybrid Non-Volatile Flip-Flops Using Spin-Orbit-Torque (SOT) Magnetic Tunnel Junction Devices for High Integration and Low Energy Power-Gating Applications.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 9, p. 1406, doi. 10.3390/electronics9091406

By:

Park, Jaeyoung

Publication type:

Article

Correlation free large-scale probabilistic computing using a true-random chaotic oscillator p-bit.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-93218-8

By:

Lee, Woojin;
Kim, Hyunjin;
Jung, Hyundo;
Choi, Yohan;
Jeon, Jinwoo;
Kim, Chulwoo

Publication type:

Article

GPU-accelerated simulated annealing based on p-bits with real-world device-variability modeling.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-90520-3

By:

Onizawa, Naoya;
Hanyu, Takahiro

Publication type:

Article

Effect of Dzyaloshinskii Moriya interaction on magnetic tunnel junction based molecular spintronics devices (MTJMSD).

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-88741-7

By:

Sankhi, Babu Ram;
D'Angelo, Christopher;
Thompson, Danielle;
Tyagi, Pawan

Publication type:

Article

Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep07277

By:

Li, D. L.;
Ma, Q. L.;
Wang, S. G.;
Ward, R. C. C.;
Hesjedal, T.;
Zhang, X.-G.;
Kohn, A.;
Amsellem, E.;
Yang, G.;
Liu, J. L.;
Jiang, J.;
Wei, H. X.;
Han, X. F.

Publication type:

Article

Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep06505

By:

Li Ming Loong;
Xuepeng Qiu;
Zhi Peng Neo;
Deorani, Praveen;
Yang Wu;
Bhatia, Charanjit S.;
Saeys, Mark;
Hyunsoo Yang

Publication type:

Article

Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep05895

By:

Liu, T.;
Zhang, Y.;
Cai, J. W.;
Pan, H. Y.

Publication type:

Article

Realization of Tunable Photonic Spin Hall Effect by Tailoring the Pancharatnam-Berry Phase.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep05557

By:

Xiaohui Ling;
Xinxing Zhou;
Weixing Shu;
Hailu Luo;
Shuangchun Wen

Publication type:

Article

Spin memristive magnetic tunnel junctions with CoO-ZnO nano composite barrier.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep03835

By:

Qiang Li;
Ting-Ting Shen;
Yan-Ling Cao;
Kun Zhang;
Shi-Shen Yan;
Yu-Feng Tian;
Shi-Shou Kang;
Ming-Wen Zhao;
You-Yong Dai;
Yan-Xue Chen;
Guo-Lei Liu;
Liang-Mo Mei;
Xiao-Lin Wang;
Peter Grünberg

Publication type:

Article

Parallel fabrication of magnetic tunnel junction nanopillars by nanosphere lithography.

Published in:

Scientific Reports, 2013, p. 1, doi. 10.1038/srep01948

By:

W. G. Wang;
Pearse, A.;
M. Li;
Hageman, S.;
A. X. Chen;
F. Q. Zhu;
C. L. Chien

Publication type:

Article

Dielectric constant of MgO tunnel barrier with epitaxial strain.

Published in:

NPG Asia Materials, 2025, v. 17, n. 1, p. 1, doi. 10.1038/s41427-025-00585-9

By:

Nozaki, Tomohiro;
Onoda, Hiroshige;
Tamaru, Shingo;
Nakayama, Hiroyasu;
Konoto, Makoto;
Nozaki, Takayuki;
Yuasa, Shinji

Publication type:

Article

Spin-dependent resonant tunneling in CdTe/Cd1−xMnxTe nanostructures: effect of polaronic mass.

Published in:

European Physical Journal B: Condensed Matter, 2025, v. 98, n. 3, p. 1, doi. 10.1140/epjb/s10051-025-00888-4

By:

Chandrasekar, L. Bruno;
Dinesh, A.;
Gnanasekaran, Lalitha;
Santhamoorthy, Madhappan;
Karunakaran, M.;
Manikandan, A.;
Priyadharshini, E.;
Sundaram, P. Shunmuga;
Ibrahim, S. Kaleel Mohamed

Publication type:

Article

Even–odd chain effect and quantum pumping effect induced spatial spin filter on a Y-shaped zigzag silicene nanoribbon junction.

Published in:

European Physical Journal B: Condensed Matter, 2020, v. 93, n. 11, p. 1, doi. 10.1140/epjb/e2020-10321-1

By:

Zhang, Lin;
Tian, Hong Yu

Publication type:

Article

First-principles study on stability, electronic and thermodynamic properties of TiCoIn and TiNiIn.

Published in:

European Physical Journal B: Condensed Matter, 2013, v. 86, n. 11, p. 1, doi. 10.1140/epjb/e2013-40784-8

By:

Wei, Xiao-Ping;
Chu, Yan-Dong;
Sun, Xiao-Wei;
Deng, Jian-Bo

Publication type:

Article

Nearly perfect spin polarization of noncollinear antiferromagnets.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-54526-1

By:

Gurung, Gautam;
Elekhtiar, Mohamed;
Luo, Qing-Qing;
Shao, Ding-Fu;
Tsymbal, Evgeny Y.

Publication type:

Article

A low noise CMOS instrumentation amplifier for TMR-effect-based magnetic sensors.

Published in:

Modern Physics Letters B, 2021, v. 35, n. 12, p. N.PAG, doi. 10.1142/S0217984921501785

By:

Zhang, Wenbo;
Chen, Weiping;
Yin, Liang;
Fu, Qiang;
Di, Xinpeng;
Zhang, Yufeng;
Liu, Xiaowei

Publication type:

Article

An integrated low 1/ f noise and high-sensitivity CMOS instrumentation amplifier for TMR sensors.

Published in:

Modern Physics Letters B, 2017, v. 31, n. 8, p. -1, doi. 10.1142/S0217984917500701

By:

Gao, Zhiqiang;
Luan, Bo;
Zhao, Jincai;
Liu, Xiaowei

Publication type:

Article

First-principles calculations of perpendicular magnetic anisotropy for spintronic applications.

Published in:

Modern Physics Letters B, 2017, v. 31, n. 2, p. -1, doi. 10.1142/S0217984917500105

By:

Ansarino, Masoud;
Ravan, Bahram Abedi

Publication type:

Article

Bias voltage-dependent low field spin transport properties of Fe3O4-PEG with different particle sizes.

Published in:

Modern Physics Letters B, 2016, v. 30, n. 23, p. -1, doi. 10.1142/S0217984916503012

By:

Xu, Chunlong;
Wang, Zhen;
Wang, Lei;
Shi, Gang;
Hou, Zhaoyang;
Xi, Li

Publication type:

Article

Understanding the effect of vacancy defects on spin transport in CrO2-graphene-CrO2 magnetic tunnel junction.

Published in:

Modern Physics Letters B, 2016, v. 30, n. 9, p. -1, doi. 10.1142/S0217984916501025

By:

Choudhary, Sudhanshu;
Kaushik, Divya

Publication type:

Article

A theoretical study of magnetoelectronic and switching properties of molecular magnetic tunnel junctions.

Published in:

Modern Physics Letters B, 2016, v. 30, n. 4, p. -1, doi. 10.1142/S0217984916500172

By:

Soti, V.;
Ravan, B. Abedi

Publication type:

Article

Spin-transfer magnetic random access memory devices with an orthogonal polarizing layer.

Published in:

Modern Physics Letters B, 2014, v. 28, n. 12, p. 1, doi. 10.1142/S0217984914300051

By:

Huanlong Liu

Publication type:

Article

Magnetic and magnetoresistive properties of nanocomposites based on Co and SiO.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2019, v. 33, n. 12, p. N.PAG, doi. 10.1142/S0217979219501133

By:

Pazukha, I. M.;
Shkurdoda, Y. O.;
Chornous, A. M.;
Dekhtyaruk, L. V.

Publication type:

Article

Magnetized liquid at finite temperature: A variational calculation approach.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 22, p. -1, doi. 10.1142/S0217979216501290

By:

Bordbar, Gholam Hossein;
Mohammadi Sabet, Mohammad Taghi

Publication type:

Article

Intramolecular Exchange Interactions Impact on Molecular Spin Channels Connected Between Two Ferromagnets: Insights from Monte Carlo Simulations.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4331, doi. 10.1007/s11664-025-11834-6

By:

Grizzle, Andrew;
D'Angelo, Christopher;
Tyagi, Pawan

Publication type:

Article

First-Principles Study of Electric Field Effects on the Magnetic Anisotropy in MgO/Fe2IrGa Heterostructures: First-Principles Study of Electric Field Effects on the Magnetic Anisotropy in MgO/Fe2IrGa Heterostructures: S. Gao et al.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 1602, doi. 10.1007/s11664-024-11665-x

By:

Gao, Shiran;
Zhao, Chengyang;
Zhang, Xinzhuo;
Qiao, Wen;
Yan, Shiming;
Bai, Ru;
Zhou, Tiejun

Publication type:

Article

Enhanced Transport Parameters of Transition Metal Dichalcogenide-Based Double-Barrier Magnetic Tunnel Junction.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 9, p. 5505, doi. 10.1007/s11664-024-11267-7

By:

Sinha, Reshma;
Kaur, Jasdeep

Publication type:

Article

Angular Magnetic-Field-Dependent Tunneling Magnetoresistance Controlled by Electric Fields in an MTJ/PMN-PT Multiferroic Heterostructure.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 4, p. 2645, doi. 10.1007/s11664-023-10226-y

By:

Wang, Shaoting;
Yang, Yuanjun;
He, Lanping;
Li, Wanyu;
Jiang, Yang;
Wang, Chi;
Li, Lu;
Wei, Chong;
Sun, Yuchen;
Ge, Weifeng;
Jia, Cheng;
Zhang, Hui;
Wang, Lan

Publication type:

Article

Analyzing the Impact of Different Composite Dielectrics on Performance Parameters of a Magnetic Tunnel Junction Memory Device.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 10, p. 5686, doi. 10.1007/s11664-022-09841-y

By:

Sinha, Reshma;
Kaur, Jasdeep

Publication type:

Article

Spin-Filter Devices Based on Resonant Magnetic Tunnel Junctions.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 7, p. 3930, doi. 10.1007/s11664-021-08892-x

By:

Daqiq, Reza

Publication type:

Article