Stochastic-Based Spin-Programmable Gate Array with Emerging MTJ Device Technology.
- Published in:
- Journal of Low Power Electronics & Applications, 2016, v. 6, n. 3, p. 15, doi. 10.3390/jlpea6030015
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- Publication type:
- Article
Works matching DE "MAGNETIC tunnel junction devices"
Results: 5
1
2
Two-transistor and two-magnetic-tunneljunction multi-level cell structured spintransfer torque magnetic random access memory with optimisations on power and reliability.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 2, p. 104, doi. 10.1049/el.2015.2965
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- Publication type:
- Article
3
Ultra-energy-efficient CMOS/magnetic non-volatile flip-flop based on spin-orbit torque device.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 8, p. 585, doi. 10.1049/el.2014.0372
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- Publication type:
- Article
4
Spin transfer torque in non-collinear magnetic tunnel junctions exhibiting quasiparticle bands: a non-equilibrium Green's function study.
- Published in:
- European Physical Journal B: Condensed Matter, 2017, v. 90, n. 6, p. 1, doi. 10.1140/epjb/e2017-80069-8
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- Publication type:
- Article
5
Enhancement of Seebeck Coefficients by Resonant Tunneling Effect.
- Published in:
- Journal of Electronic Materials, 2017, v. 46, n. 10, p. 5792, doi. 10.1007/s11664-017-5606-6
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- Publication type:
- Article