Works matching DE "MAGNETIC semiconductors"
Results: 584
Study of nanostructured Co and Al co-doped ZnO films fabricated by electroless technique.
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- Surface Engineering, 2016, v. 32, n. 5, p. 372, doi. 10.1179/1743294415Y.0000000079
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Explicit solitary wave solutions for the nonlinear equations in semiconductor and magnetic field with their stability analysis.
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- Optical & Quantum Electronics, 2024, v. 56, n. 1, p. 1, doi. 10.1007/s11082-023-05644-5
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Eu based layered EuFAgX (X = S, Se and Te) magnetic semiconductors for optoelectronic and thermoelectric applications.
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- Optical & Quantum Electronics, 2023, v. 55, n. 14, p. 1, doi. 10.1007/s11082-023-05580-4
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First principles investigations on electronic and magnetic properties of Fe: SnO monolayer.
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- Optical & Quantum Electronics, 2023, v. 55, n. 10, p. 1, doi. 10.1007/s11082-023-05186-w
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Electronic, magnetic and optical properties of Cr and Fe doped ZnS and CdS diluted magnetic semiconductors: revised study within TB-mBJ potential.
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- Optical & Quantum Electronics, 2023, v. 55, n. 4, p. 1, doi. 10.1007/s11082-023-04602-5
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Room temperature ferromagnetism in metal oxides for spintronics: a comprehensive review.
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- Optical & Quantum Electronics, 2023, v. 55, n. 2, p. 1, doi. 10.1007/s11082-022-04325-z
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Effect of Cr<sup>3+</sup> doped on electronic and magnetic properties of SrFe<sub>12</sub>O<sub>19</sub> by first-principles study.
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- Theoretical Chemistry Accounts: Theory, Computation, & Modeling, 2021, v. 140, n. 10, p. 1, doi. 10.1007/s00214-021-02835-9
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Abnormal thickness-dependent magneto-transport properties of vdW magnetic semiconductor Cr<sub>2</sub>Si<sub>2</sub>Te<sub>6</sub>.
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- NPJ 2D Materials & Applications, 2023, v. 7, n. 1, p. 1, doi. 10.1038/s41699-023-00404-1
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Magnetic properties of Mn doped crystalline and amorphous Ge thin films grown on Si (111).
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- Turkish Journal of Physics, 2020, v. 44, n. 1, p. 67, doi. 10.3906/fiz-1909-17
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Colloidal Second Near‐Infrared‐Emitting Mn‐Doped Ag<sub>2</sub>S Quantum Dots.
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- ChemNanoMat, 2020, v. 6, n. 4, p. 538, doi. 10.1002/cnma.202000086
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Anomalous hall effect in the InMnSb dilute magnetic semiconductor with MnSb inclusions.
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- JETP Letters, 2015, v. 101, n. 2, p. 130, doi. 10.1134/S0021364015020149
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Electronic and magnetic properties of a new 2D diluted magnetic semiconductor LaBaZnMnAsO from Ab initio calculations.
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- JETP Letters, 2013, v. 98, n. 7, p. 393, doi. 10.1134/S0021364013200046
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Ab initio search for novel bipolar magnetic semiconductors: Layered YZnAsO doped with Fe and Mn.
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- JETP Letters, 2013, v. 96, n. 11, p. 735, doi. 10.1134/S0021364012230038
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Relaxation of radiation-induced defects in CuO.
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- JETP Letters, 2009, v. 89, n. 8, p. 414, doi. 10.1134/S0021364009080086
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Density of states in SF bilayers with arbitrary strength of magnetic scattering.
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- JETP Letters, 2006, v. 83, n. 8, p. 327, doi. 10.1134/S0021364006080066
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Strain-controlled spin transport in a two-dimensional (2D) nanomagnet.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-43025-w
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Strain-controlled spin transport in a two-dimensional (2D) nanomagnet.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-43025-w
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A bulk form Cu-based ferromagnetic semiconductor (La,Ba)(Cu,Mn)SO with the Curie temperature up to 170 K.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-41895-8
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Magnetic and Thermospin Transport Properties of Triangular Graphene-Flake-Doped Boron Nitride Nanotubes.
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- SPIN (2010-3247), 2022, v. 12, n. 2, p. 1, doi. 10.1142/S2010324722500151
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The Road to High-Temperature Quantum Anomalous Hall Effect in Magnetic Topological Insulators.
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- SPIN (2010-3247), 2019, v. 9, n. 4, p. N.PAG, doi. 10.1142/S2010324719400162
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Half-Metallic Ferromagnetism in Double Perovskite Ca<sub>2</sub>CoMoO<sub>6</sub> Compound: DFT Calculations.
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- SPIN (2010-3247), 2017, v. 7, n. 4, p. -1, doi. 10.1142/S2010324717500096
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Exchange-Based Magneto-Electric Effect in Magnetic Vortex.
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- SPIN (2010-3247), 2017, v. 7, n. 2, p. -1, doi. 10.1142/S2010324717500035
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Characterization of Versatile Temperature-Sensitive Magnetic Semiconductor with Nonlinear Negative Resistance.
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- Electrical Engineering in Japan, 1987, v. 107, n. 3, p. 14, doi. 10.1002/eej.4391070302
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Thomson and rotation effects during photothermal excitation process in magnetic semiconductor medium using variable thermal conductivity.
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- Applied Mathematics & Mechanics, 2020, v. 41, n. 6, p. 909, doi. 10.1007/s10483-020-2613-9
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A general thermodynamics-triggered competitive growth model to guide the synthesis of two-dimensional nonlayered materials.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-36619-5
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Computational design of two‐dimensional magnetic materials.
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- WIREs: Computational Molecular Science, 2022, v. 12, n. 2, p. 1, doi. 10.1002/wcms.1545
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Structural Characterization of Zn<sub>0.865</sub>Feo<sub>0.045</sub>O Diluted Magnetic Semiconductor.
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- IUP Journal of Electrical & Electronics Engineering, 2017, v. 10, n. 4, p. 23
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High Gain Coefficient Parametric Amplification of Optical Phonon Mode in Magnetized AIIIBV Semiconductor Plasmas.
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- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2021, v. 46, n. 1, p. 721, doi. 10.1007/s13369-020-04834-7
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Solvothermal Synthesis of In<sub>2− x</sub> Co<sub> x</sub> O<sub>3</sub> (0.05 ≤ x ≤ 0.15) Dilute Magnetic Semiconductors: Optical, Magnetic, and Dielectric Properties.
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- Journal of the American Ceramic Society, 2013, v. 96, n. 8, p. 2544, doi. 10.1111/jace.12361
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Synthesis and Magnetic Characterization of Metal-filled Double-sided Porous Silicon Samples.
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- Nanoscale Research Letters, 2010, v. 5, n. 2, p. 379, doi. 10.1007/s11671-009-9492-6
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A Novel Approach to Molecular Recognition Surface of Magnetic Nanoparticles Based on Host–Guest Effect.
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- Nanoscale Research Letters, 2009, v. 4, n. 7, p. 738, doi. 10.1007/s11671-009-9314-x
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Photons and magnetization.
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- Nature Photonics, 2013, v. 7, n. 6, p. 500, doi. 10.1038/nphoton.2013.133
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- Article
Modulation of Electronic Properties of PtSe<sub>2</sub>/XBr<sub>2</sub> (X = Ni, Co) Heterostructures by Strain and Electric Field.
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- Semiconductors, 2024, v. 58, n. 12, p. 1006, doi. 10.1134/S1063782624601766
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On the Dominant Mechanism of the Nonradiative Excitation of Manganese Ions in II–VI Diluted Magnetic Semiconductors.
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- Semiconductors, 2020, v. 54, n. 4, p. 433, doi. 10.1134/S1063782620040041
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Quantum Corrections and Magnetotransport in 3D Dirac Semimetal Cd<sub>3 –</sub><sub>x</sub>Mn<sub>x</sub>As<sub>2</sub> Films.
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- Semiconductors, 2019, v. 53, n. 11, p. 1439, doi. 10.1134/S1063782619110137
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Hyperfine Interaction and Shockley–Read–Hall Recombination in Semiconductors.
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- Semiconductors, 2019, v. 53, n. 9, p. 1175, doi. 10.1134/S1063782619090070
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Electrochemical Deposition of Permalloy Films for Magneto-Semiconductor Microsystems.
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- Semiconductors, 2017, v. 51, n. 13, p. 1707, doi. 10.1134/S1063782617130024
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Magnetic materials: Skyrme meets Néel.
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- Nature Physics, 2015, v. 11, n. 10, p. 800, doi. 10.1038/nphys3511
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Spin-orbitronics: A new moment for Berry.
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- Nature Physics, 2014, v. 10, n. 5, p. 340, doi. 10.1038/nphys2957
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Experimental probing of the interplay between ferromagnetism and localization in (Ga, Mn)As.
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- Nature Physics, 2010, v. 6, n. 1, p. 22, doi. 10.1038/nphys1455
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- Article
ELECTRONIC AND MAGNETIC PROPERTIES OF TRANSITION METAL ATOMS ADSORBED SnS<sub>2</sub> MONOLAYERS.
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- Chalcogenide Letters, 2017, v. 14, n. 11, p. 475
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X-RAY POWDER DIFFRACTION DATA FOR THE TERNARY CHALCOGENIDES Fe<sub>2</sub>GeTe<sub>4</sub>, Mn<sub>2</sub>GeTe<sub>4</sub> AND Mn<sub>2</sub>SnTe<sub>4</sub>.
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- Chalcogenide Letters, 2009, v. 6, n. 12, p. 647
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STRUCTURAL CHARACTERIZATION OF THE DILUTED MAGNETIC SEMICONDUCTOR CuGa<sub>(1-X)</sub>Mn<sub>(X)</sub>Se<sub>2</sub>.
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- Chalcogenide Letters, 2009, v. 6, n. 7, p. 293
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ROOM TEMPERATURE FERROMAGNETISM IN Co-DOPED ZnO NANOPARTICLES:: MILLING TIME DEPENDENCE AND ANNEALING EFFECT.
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- International Journal of Nanoscience, 2011, v. 10, n. 1/2, p. 307, doi. 10.1142/S0219581X11007697
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MAGNETIC PROPERTIES Cu DOPED ZnO:Fe SEMICONDUCTORS.
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- International Journal of Nanoscience, 2010, v. 9, n. 6, p. 591, doi. 10.1142/S0219581X10007319
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DEPTH DEPENDENCE OF MAGNETIC AND ELECTRIC PROPERTIES IN GaMnAs LAYERS.
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- International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 115, doi. 10.1142/S0219581X04001882
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Mn doping nanoarchitectonics of NiO nanoparticles with various property impacts for optoelectronic devices and diluted magnetic semiconductor applications.
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- Journal of Materials Science: Materials in Electronics, 2024, v. 35, n. 31, p. 1, doi. 10.1007/s10854-024-13658-2
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Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies.
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- Journal of Materials Science: Materials in Electronics, 2024, v. 35, n. 23, p. 1, doi. 10.1007/s10854-024-13318-5
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Unraveling the physical properties of Mn-doped CdS diluted magnetic semiconductor quantum dots for potential application in quantum spintronics.
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- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 27, p. 21822, doi. 10.1007/s10854-022-08969-1
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Physicochemical investigations of structurally enriched Sm<sup>3+</sup> substituted SnO<sub>2</sub> nanocrystals.
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- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 8, p. 5283, doi. 10.1007/s10854-022-07716-w
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