Works about JUNCTION transistors

Results: 200

Analysis and Optimization of Vertical NPN BJT for Strong Magnetic Fields.

Published in:

Micromachines, 2025, v. 16, n. 6, p. 671, doi. 10.3390/mi16060671

By:

Liao, Xinfang;
Guo, Kexin;
Xu, Changqing;
Liu, Yi;
Meng, Fanxin;
Zhou, Junyi;
Ding, Rui;
Li, Juxiang;
Huang, Kai;
Yang, Yintang

Publication type:

Article

Double-polysilicon self-aligned lateral bipolar transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 183, doi. 10.1007/s10854-007-9300-y

By:

Pengpad, P.;
Bagnall, D. M.

Publication type:

Article

A Low-Power 868 MHz BJT-Based LNA with Microstrip Matching for Wake-Up Receivers in IoT Applications.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 12, p. 2429, doi. 10.3390/electronics14122429

By:

Ouerghemmi, Sarah;
Fakhfakh, Ahmed;
Derbel, Faouzi

Publication type:

Article

Insulated Gate Bipolar Transistor Junction Temperature Estimation Technology for Traction Inverters Using a Thermal Model.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 5, p. 999, doi. 10.3390/electronics14050999

By:

Kong, Kijung;
Choi, Junhwan;
Park, Geonhyeong;
Baek, Seungmin;
Ju, Sungeun;
Han, Yongsu

Publication type:

Article

A Compact Model with Self-Heating Effect Applying to the SCR Device for ESD Protection.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 5, p. 843, doi. 10.3390/electronics14050843

By:

Wang, Hongkun;
Liang, Hailian;
Liu, Junliang

Publication type:

Article

Electrothermal Averaged Model of a Half-Bridge DC–DC Converter Containing a Power Module.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 18, p. 3662, doi. 10.3390/electronics13183662

By:

Górecki, Krzysztof;
Górecki, Paweł

Publication type:

Article

A 2.25 ppm/°C High-Order Temperature-Segmented Compensation Bandgap Reference.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 8, p. 1499, doi. 10.3390/electronics13081499

By:

Jia, Shichao;
Ye, Tianchun;
Xiao, Shimao

Publication type:

Article

Comparison between a Cascaded H-Bridge and a Conventional H-Bridge for a 5-kW Grid-Tied Solar Inverter.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 8, p. 1929, doi. 10.3390/electronics12081929

By:

Bertin, Thibault;
Despesse, Ghislain;
Thomas, Remy

Publication type:

Article

3D Printed Electronic Circuits from Fusible Alloys.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 22, p. 3829, doi. 10.3390/electronics11223829

By:

Podsiadły, Bartłomiej;
Bezgan, Liubomir;
Słoma, Marcin

Publication type:

Article

A Single-Event Burnout Hardened Super-Junction Trench SOI LDMOS with Additional Hole Leakage Paths.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 22, p. 3764, doi. 10.3390/electronics11223764

By:

Wang, Yue;
Wang, Lixin;
Li, Yuanzhe;
Cui, Mengyao;
Zheng, Zhuoxuan

Publication type:

Article

A New Gate Driver for Suppressing Crosstalk of SiC MOSFET.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 20, p. 3268, doi. 10.3390/electronics11203268

By:

Liang, Mei;
Chen, Jiwen;
Bai, Jinchao;
Jia, Pengyu;
Jiao, Yuzhe

Publication type:

Article

Low-Noise Programmable Voltage Source.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 8, p. 1245, doi. 10.3390/electronics9081245

By:

Achtenberg, Krzysztof;
Mikołajczyk, Janusz;
Ciofi, Carmine;
Scandurra, Graziella;
Bielecki, Zbigniew

Publication type:

Article

Gate Current and Snapback of 4H-SiC Thyristors on N+ Substrate for Power-Switching Applications.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 2, p. 332, doi. 10.3390/electronics9020332

By:

Lee, Hojun;
Seok, Ogyun;
Kim, Taeeun;
Ha, Min-Woo

Publication type:

Article

A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization.

Published in:

Electronics (2079-9292), 2019, v. 8, n. 11, p. 1317, doi. 10.3390/electronics8111317

By:

Jeon, Jooyoung;
Kang, Myounggon

Publication type:

Article

Software-Based Adaptive Protection Control against Load Mismatch for a Mobile Power Amplifier Module.

Published in:

Electronics (2079-9292), 2019, v. 8, n. 11, p. 1226, doi. 10.3390/electronics8111226

By:

Jeon, Jooyoung;
Jung, Youngho;
Kang, Myounggon

Publication type:

Article

Study on electronic transport and optoelectronic properties of semiconductor 2D Ge₂Y₂ (Y = As, P, N).

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-98824-0

By:

Liao, Jiabao;
Fei, Nan;
Guo, Shujin;
An, Yipeng;
Zhao, Guoping

Publication type:

Article

High Power Analysis of Surrounded Channel Junction Less Field Effect Transistor.

Published in:

Journal of Nano- & Electronic Physics, 2024, v. 16, n. 5, p. 1, doi. 10.21272/jnep.16(5).05004

By:

Das, N.;
Sarma, K. C. D.

Publication type:

Article

Effect of Trench Isolation on the Self-heating Phenomenon in Advanced Radio Frequency SiGe Heterojunction Bipolar Transistor.

Published in:

Journal of Nano- & Electronic Physics, 2021, v. 13, n. 1, p. 01021-1, doi. 10.21272/jnep.13(1).01021

By:

Kherief, N.;
Latreche, S.;
Lakhdara, M.;
Boulgheb, A.;
Gontrand, C.

Publication type:

Article

Transitions between Electron Transporting Mechanisms in Molecular Junctions and Transistors.

Published in:

Journal of the Chinese Chemical Society, 2014, v. 61, n. 1, p. 101, doi. 10.1002/jccs.201300504

By:

Kuo, Chun-Ting;
Su, Li-Chen;
Chen, Chun-hsien

Publication type:

Article

Fully GaN Monolithic Integrated Light Emitting Triode‐on‐Bipolar Junction Transistor Device Drivable with Small Current Signals and Its Frequency Response Characteristic: A Modeling and Simulation Study.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 24, p. 1, doi. 10.1002/pssa.202200606

By:

Hao, Shaokun;
Ye, Jinyu;
Guo, Chenguang;
Zhou, Xiongtu;
Zhang, Yongai;
Wu, Chaoxing;
Guo, Tailiang;
Sun, Jie;
Yan, Qun;
Zhan, Fan;
Liu, Hengshan

Publication type:

Article

Operation of Magnetic Vortex Transistor by Spin‐Polarized Current: A Micromagnetic Approach.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 7, p. 1, doi. 10.1002/pssa.202100564

By:

Bhattacharjee, Payal;
Barman, Anjan;
Barman, Saswati

Publication type:

Article

Investigation of optically generated kink effect in GaAs-based heterojunction phototransistors.

Published in:

European Physical Journal B: Condensed Matter, 2011, v. 83, n. 2, p. 143, doi. 10.1140/epjb/e2011-20238-3

By:

Khan, H.;
Rezazadeh, A.

Publication type:

Article

Polarity modulation in compositionally tunable Bi2O2Se thin films.

Published in:

Nature Communications, 2025, v. 16, n. 1, p. 1, doi. 10.1038/s41467-025-58198-3

By:

Wang, Yong-Jyun;
Zhang, Jian-Wei;
Chen, Jianchu;
Wang, Haonan;
Wu, Shiuan;
Lo, Chang-Yu;
Hong, Jhe-Ting;
Syu, Cheng-Yang;
Hao, Li-Syuan;
Chen, I-Sung;
Chang, Yuan-Chih;
Yang, Zhenzhong;
Huang, Rong;
Lin, Chun-Liang;
Chiu, Po-Wen;
Chueh, Yu-Lun;
Chen, Yi-Cheng;
Yeh, Chao-Hui;
Chu, Ying-Hao

Publication type:

Article

Compact nanosecond pulse generator based on IGBT and spark gap cooperation.

Published in:

Bulletin of the Polish Academy of Sciences: Technical Sciences, 2020, v. 68, n. 2, p. 377, doi. 10.24425/bpasts.2020.131845

By:

ACHOUR, Y.;
STARZYŃSKI, J.;
ŁASICA, A.

Publication type:

Article

Enhanced VDMOS design with reduced parasitic effect.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2025, v. 39, n. 19, p. 1, doi. 10.1142/S021797922550167X

By:

Prasad, Madhulika;
Sahu, Satish Kumar;
Parmar, Onika

Publication type:

Article

POWER ADAPTIVE CONTROL OF DENSE CONFIGURED SUPER-SELF-ALIGNED BACK-GATE PLANAR TRANSISTORS.

Published in:

International Journal of High Speed Electronics & Systems, 2007, v. 17, n. 1, p. 143, doi. 10.1142/S0129156407004357

By:

LIN, HAO;
LIU, HAITAO;
KUMAR, ARVIND;
AVCI, UYGAR;
VAN DELDEN, JAY S.;
TIWARI, SANDIP

Publication type:

Article

ENHANCING POWER ELECTRONIC DEVICES WITH WIDE BANDGAP SEMICONDUCTORS.

Published in:

International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 2, p. 545, doi. 10.1142/S0129156406003837

By:

Ozpineci, Burak;
Chenthavali, Madhu Sudi-ian;
Tolbert, Leon M.

Publication type:

Article

A Conceptual Model for a Feature-Based Virtual Network.

Published in:

GeoInformatica, 2000, v. 4, n. 3, p. 271, doi. 10.1023/A:1009853309757

By:

Chenghu Zhou;
Feng Lu;
Qing Wan

Publication type:

Article

A low‐power NPN‐based band‐gap voltage reference in an ultra‐wide temperature range.

Published in:

Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 9, p. 1, doi. 10.1049/ell2.12808

By:

Xue, Weidong;
Zhang, Yiseng;
Fang, Jian;
Ren, Junyan

Publication type:

Article

A FR4‐based compact VCO with wide tuning range using SISL transformed triple‐tanks.

Published in:

Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 20, p. 764, doi. 10.1049/ell2.12251

By:

Fu, Haipeng;
Ma, Kaige;
Ma, Kaixue;
Wang, Yongqiang

Publication type:

Article

Dynamic characteristics after bias stress of GaN HEMTs with field plate on free‐standing GaN substrate.

Published in:

Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 15, p. 591, doi. 10.1049/ell2.12201

By:

Ma, Qiang;
Ando, Yuji;
Wakejima, Akio

Publication type:

Article

Vertical bipolar junction transistor triggered silicon-controlled rectifier for nanoscale ESD engineering.

Published in:

Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 7, p. 350, doi. 10.1049/el.2019.3864

By:

Feibo Du;
Fei Hou;
Wenqiang Song;
YiChen Xu;
Jizhi Liu;
Zhiwei Liu;
Liou, Juin J.

Publication type:

Article

in brief.

Published in:: Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 7, p. 314, doi. 10.1049/el.2020.0743
Publication type:: Article

ANALYSIS OF POWER LOSSES IN MULTILEVEL PULSE-WIDTH MODULATION INVERTERS.

Published in:

Eastern-European Journal of Enterprise Technologies, 2022, v. 116, n. 5, p. 31, doi. 10.15587/1729-4061.2022.252771

By:

Manat, Symbat;
Yugay, Vyacheslav;
Kaliaskarov, Nurbol

Publication type:

Article

Performance Enhancement of MoSe 2 and WSe 2 Based Junction Field Effect Transistors with Gate-All-Around Structure.

Published in:

Crystals (2073-4352), 2024, v. 14, n. 11, p. 984, doi. 10.3390/cryst14110984

By:

Woo, Changlim;
Abderrahmane, Abdelkader;
Jung, Pangum;
Ko, Pilju

Publication type:

Article

Optoelectronic Properties of Hexagonal Boron Nitride Shielded Molybdenum Diselenide/Black-Phosphorus Based Heterojunction Field Effect Transistor.

Published in:

Coatings (2079-6412), 2022, v. 12, n. 4, p. 445, doi. 10.3390/coatings12040445

By:

Abderrahmane, Abdelkader;
Woo, Changlim;
Ko, Pil-Ju

Publication type:

Article

Remaining useful life estimation using accelerated degradation test, a gamma process, and the arrhenius model for nuclear power plants.

Published in:

Journal of Mechanical Science & Technology, 2022, v. 36, n. 10, p. 4905, doi. 10.1007/s12206-022-0904-1

By:

Kang, Minkoo;
Lee, Sunjae;
Kim, Jong Ho;
Yoo, Chan Sei;
Jang, Joongsoon;
Negatu, Belachew Mekbibe;
Park, Sangchul

Publication type:

Article

A Novel Schottky Collector Lateral Bipolar Junction Transistor on Silicon on Insulator.

Published in:

Journal of Active & Passive Electronic Devices, 2014, v. 9, n. 4, p. 281

By:

LOAN, SAJAD A.

Publication type:

Article

A New Design for a BiCMOS Controlled Current Conveyor.

Published in:

Electronics & Electrical Engineering, 2013, v. 19, n. 1, p. 56, doi. 10.5755/j01.eee.19.1.3257

By:

Ercan, H.;
Alçı, M.

Publication type:

Article

Sub-10-nm Scalability of Emerging Nanowire Junctionless FETs Using a Schottky Metallic Core.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 3, p. 1110, doi. 10.1007/s11664-020-08638-1

By:

Jain, Aakash Kumar;
Singha, Aniket

Publication type:

Article

Electrical Characterization of Graphite/InP Schottky Diodes by I-V-T and C-V Methods.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 9, p. 4950, doi. 10.1007/s11664-018-6123-y

By:

Tiagulskyi, Stanislav;
Yatskiv, Roman;
Grym, Jan

Publication type:

Article

Multifunctional WSe2/SnSe2/WSe2 van der Waals heterostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 15, p. 11841, doi. 10.1007/s10854-022-08147-3

By:

Abderrahmane, Abdelkader;
Woo, Changlim;
Ko, Pil Ju

Publication type:

Article

A homodyne five-port network analyzer operating in the W-frequency band.

Published in:

Microwave & Optical Technology Letters, 2004, v. 40, n. 6, p. 444, doi. 10.1002/mop.20001

By:

Chahine, S. Abou;
Huyart, B.

Publication type:

Article

Systematic design of resonant microstrip sensors with sensitive coating.

Published in:

Microwave & Optical Technology Letters, 2002, v. 32, n. 1, p. 21, doi. 10.1002/mop.10081

By:

Pawlak, H.;
Jannsen, B.;
Jacob, A. F.

Publication type:

Article

A novel wide-angle polymeric X-junction using truncated-structural branches (TSB).

Published in:

Microwave & Optical Technology Letters, 1999, v. 22, n. 3, p. 197, doi. 10.1002/(SICI)1098-2760(19990805)22:3<197::AID-MOP13>3.0.CO;2-X

By:

Pandit, M. K.;
Chan, H. P.;
Chiang, K. S.;
Ghosh, S.;
Das, A. K.

Publication type:

Article

SELF-TIMED p-i-n -- HBT PPM RECEIVERS.

Published in:

Microwave & Optical Technology Letters, 1994, v. 7, n. 13, p. 610, doi. 10.1002/mop.4650071308

By:

Elmirghani, J. M. H.

Publication type:

Article

Displacement damage and total ionisation dose effects on 4H-SiC power devices.

Published in:

IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 15, p. 1, doi. 10.1049/iet-pel.2019.0049

By:

Hazdra, Pavel;
Popelka, Stanislav

Publication type:

Article

Junction temperature estimation of IGBT module via a bond wires lift-off independent parameter VgE-np.

Published in:

IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 2, p. 320, doi. 10.1049/iet-pel.2017.0168

By:

Yingzhou Peng;
Luowei Zhou;
Xiong Du;
Pengju Sun;
Kaihong Wang;
Jie Cai

Publication type:

Article

Base drive energy recovery for a silicon bipolar junction transistors.

Published in:

IET Power Electronics (Wiley-Blackwell), 2015, v. 8, n. 12, p. 2429, doi. 10.1049/iet-pel.2014.0818

By:

Hui Zhu;
Sweet, Mark;
Sankara Narayanan, E. M.

Publication type:

Article

Reduced junction temperature control during low-voltage ride-through for single-phase photovoltaic inverters.

Published in:

IET Power Electronics (Wiley-Blackwell), 2014, v. 7, n. 8, p. 2050, doi. 10.1049/iet-pel.2013.0734

By:

Yongheng Yang;
Huai Wang;
Frede Blaabjerg

Publication type:

Article