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Organic-inorganic hybrid piezotronic bipolar junction transistor for pressure sensing.
- Published in:
- Microsystems & Nanoengineering, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41378-024-00699-0
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- Article
AC Characteristics of van der Waals Bipolar Junction Transistors Using an MoS 2 /WSe 2 /MoS 2 Heterostructure.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 10, p. 851, doi. 10.3390/nano14100851
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- Article
A 2.25 ppm/°C High-Order Temperature-Segmented Compensation Bandgap Reference.
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- Electronics (2079-9292), 2024, v. 13, n. 8, p. 1499, doi. 10.3390/electronics13081499
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- Article
Realization of High Current Gain for Van der Waals MoS 2 /WSe 2 /MoS 2 Bipolar Junction Transistor.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 8, p. 718, doi. 10.3390/nano14080718
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- Article
A bipolar junction transistor EMC modeling method based on physical characteristic measurement and simplex optimization.
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- International Journal of Circuit Theory & Applications, 2024, v. 52, n. 2, p. 551, doi. 10.1002/cta.3797
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- Article
William Shockley: The Father of a Complicated Legacy.
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- Microwave Journal, 2024, v. 67, n. 2, p. 18
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- Article
Silicon Nanowire Phototransistor Arrays for CMOS Image Sensor Applications.
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- Sensors (14248220), 2023, v. 23, n. 24, p. 9824, doi. 10.3390/s23249824
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- Article
N-Channel MOSFET Reliability Issue Induced by Visible/Near-Infrared Photons in Image Sensors †.
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- Sensors (14248220), 2023, v. 23, n. 23, p. 9586, doi. 10.3390/s23239586
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- Article
Performance Analysis of SiC-Based DC/DC Converter for Solar Power Tower Heliostat Application.
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- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2023, v. 48, n. 11, p. 15207, doi. 10.1007/s13369-023-08044-9
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- Article
Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs.
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- Micromachines, 2023, v. 14, n. 9, p. 1679, doi. 10.3390/mi14091679
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- Article
Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-39705-w
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- Article
Surface Potential Visualization in Organic Antiambipolar Transistors Using Operando Kelvin Probe Force Microscopy for Understanding the Comprehensive Carrier Transport Mechanism.
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- Advanced Materials Interfaces, 2023, v. 10, n. 19, p. 1, doi. 10.1002/admi.202201857
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- Article
A High-Precision Current-Mode Bandgap Reference with Nonlinear Temperature Compensation.
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- Micromachines, 2023, v. 14, n. 7, p. 1420, doi. 10.3390/mi14071420
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- Article
Tough Transient Ionic Junctions Printed with Ionic Microgels.
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- Advanced Functional Materials, 2023, v. 33, n. 20, p. 1, doi. 10.1002/adfm.202213677
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- Article
A low‐power NPN‐based band‐gap voltage reference in an ultra‐wide temperature range.
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- Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 9, p. 1, doi. 10.1049/ell2.12808
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- Article
Integrated opposite charge grafting induced ionic-junction fiber.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-37884-0
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- Article
Comparison between a Cascaded H-Bridge and a Conventional H-Bridge for a 5-kW Grid-Tied Solar Inverter.
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- Electronics (2079-9292), 2023, v. 12, n. 8, p. 1929, doi. 10.3390/electronics12081929
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- Article
A 134-nW Single BJT Bandgap Voltage and Current Reference in 0.18-µm CMOS.
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- Circuits, Systems & Signal Processing, 2023, v. 42, n. 3, p. 1293, doi. 10.1007/s00034-022-02158-5
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- Article
A 27-MHz frequency shift keying wireless system resilient to in-band interference for wireless sensing applications.
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- International Journal of Electrical & Computer Engineering (2088-8708), 2023, v. 13, n. 1, p. 169, doi. 10.11591/ijece.v13i1.pp169-183
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- Article
Chaotic RF Generator for Sub-1-GHz Chaos-Based Communication Systems: Mathematical Modeling and Experimental Validation.
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- Journal of Circuits, Systems & Computers, 2023, v. 32, n. 1, p. 1, doi. 10.1142/S0218126623500020
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- Article
Chaotic dynamics in memristive circuits.
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- Caderno Brasileiro de Ensino de Física, 2023, v. 45, p. 1, doi. 10.1590/1806-9126-RBEF-2023-0116
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- Article
Performance Analysis of JL-FinFET with Varied Non-Uniform Doping Concentrations, Fin Height and Fin Width using Device Simulator.
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- International Journal of Nanoelectronics & Materials, 2023, v. 16, n. 1, p. 187
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- Article
Fully GaN Monolithic Integrated Light Emitting Triode‐on‐Bipolar Junction Transistor Device Drivable with Small Current Signals and Its Frequency Response Characteristic: A Modeling and Simulation Study.
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- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 24, p. 1, doi. 10.1002/pssa.202200606
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- Article
Design of a Differential Low-Noise Amplifier Using the JFET IF3602 to Improve TEM Receiver.
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- Micromachines, 2022, v. 13, n. 12, p. 2211, doi. 10.3390/mi13122211
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- Article
Design of Precision-Aware Subthreshold-Based MOSFET Voltage Reference.
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- Sensors (14248220), 2022, v. 22, n. 23, p. 9466, doi. 10.3390/s22239466
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- Article
A Single-Event Burnout Hardened Super-Junction Trench SOI LDMOS with Additional Hole Leakage Paths.
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- Electronics (2079-9292), 2022, v. 11, n. 22, p. 3764, doi. 10.3390/electronics11223764
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- Article
3D Printed Electronic Circuits from Fusible Alloys.
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- Electronics (2079-9292), 2022, v. 11, n. 22, p. 3829, doi. 10.3390/electronics11223829
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- Article
A New Gate Driver for Suppressing Crosstalk of SiC MOSFET.
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- Electronics (2079-9292), 2022, v. 11, n. 20, p. 3268, doi. 10.3390/electronics11203268
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- Article
Remaining useful life estimation using accelerated degradation test, a gamma process, and the arrhenius model for nuclear power plants.
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- Journal of Mechanical Science & Technology, 2022, v. 36, n. 10, p. 4905, doi. 10.1007/s12206-022-0904-1
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- Article
Bipolar Junction Transistor Exhibiting Excellent Output Characteristics with a Prompt Response against the Selective Protein.
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- Advanced Functional Materials, 2022, v. 32, n. 38, p. 1, doi. 10.1002/adfm.202204781
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- Article
Fast Method of Computations of Ripples in the Junction Temperature of Discrete Power SiC-MOSFETs at the Steady State.
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- Applied Sciences (2076-3417), 2022, v. 12, n. 17, p. 8887, doi. 10.3390/app12178887
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- Article
An EMC Susceptibility Study of Integrated Basic Bandgap Voltage Reference Cores.
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- Radioengineering, 2022, v. 31, n. 3, p. 413, doi. 10.13164/re.2022.0413
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- Article
Design Features of Op-Amp Based on Bipolar Transistors for Anti-Aliasing Active LPF with a Low Systematic Component of Zero Offset Voltage.
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- IUP Journal of Electrical & Electronics Engineering, 2022, v. 15, n. 3, p. 24
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- Article
3.48-nW 58.4ppm/°C Sub-threshold CMOS Voltage Reference with Four Transistors and Two Resistors.
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- Journal of Circuits, Systems & Computers, 2022, v. 31, n. 7, p. 1, doi. 10.1142/S0218126622501195
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- Article
TRANSIT TIME MODEL ANALYSIS THROUGH THE BASIS IN THE CASE OF DRIFT TRANSISTORS HBT.
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- Journal of Science & Arts, 2022, v. 22, n. 2, p. 507, doi. 10.46939/J.Sci.Arts-22.2-c01
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- Article
Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors.
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- Micromachines, 2022, v. 13, n. 6, p. 901, doi. 10.3390/mi13060901
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- Article
Multifunctional WSe<sub>2</sub>/SnSe<sub>2</sub>/WSe<sub>2</sub> van der Waals heterostructures.
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- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 15, p. 11841, doi. 10.1007/s10854-022-08147-3
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- Article
Field-effect BJT: an adaptive and multifunctional nanoscale transistor.
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- Applied Nanoscience, 2022, v. 12, n. 5, p. 1435, doi. 10.1007/s13204-021-02299-0
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- Article
Template‐Guided C8‐BTBT/MAPbBr<sub>3</sub>/C8‐BTBT Heterostructures for Broadband Bipolar Phototransistors.
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- Advanced Materials Interfaces, 2022, v. 9, n. 12, p. 1, doi. 10.1002/admi.202102344
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- Article
Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate.
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- NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-022-00302-y
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- Article
Optoelectronic Properties of Hexagonal Boron Nitride Shielded Molybdenum Diselenide/Black-Phosphorus Based Heterojunction Field Effect Transistor.
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- Coatings (2079-6412), 2022, v. 12, n. 4, p. 445, doi. 10.3390/coatings12040445
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- Article
Operation of Magnetic Vortex Transistor by Spin‐Polarized Current: A Micromagnetic Approach.
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- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 7, p. 1, doi. 10.1002/pssa.202100564
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- Article
ANALYSIS OF POWER LOSSES IN MULTILEVEL PULSE-WIDTH MODULATION INVERTERS.
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- Eastern-European Journal of Enterprise Technologies, 2022, v. 116, n. 5, p. 31, doi. 10.15587/1729-4061.2022.252771
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- Article
Mixed‐Dimensional MoS<sub>2</sub>/Ge Heterostructure Junction Field‐Effect Transistors for Logic Operation and Photodetection.
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- Advanced Functional Materials, 2022, v. 32, n. 10, p. 1, doi. 10.1002/adfm.202110181
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- Article
A 2.5 V, 2.56 ppm/°C Curvature-Compensated Bandgap Reference for High-Precision Monitoring Applications.
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- Micromachines, 2022, v. 13, n. 3, p. 465, doi. 10.3390/mi13030465
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- Article
An Overview on Bipolar Junction Transistor as a Sensor for X-ray Beams Used in Medical Diagnosis.
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- Sensors (14248220), 2022, v. 22, n. 5, p. N.PAG, doi. 10.3390/s22051923
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- Article
Junction Field‐Effect Transistors Based on PdSe<sub>2</sub>/MoS<sub>2</sub> Heterostructures for Photodetectors Showing High Responsivity and Detectivity.
- Published in:
- Advanced Functional Materials, 2021, v. 31, n. 49, p. 1, doi. 10.1002/adfm.202106105
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- Article
Electronic Sensing Platform (ESP) Based on Open-Gate Junction Field-Effect Transistor (OG-JFET) for Life Science Applications: Design, Modeling and Experimental Results.
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- Sensors (14248220), 2021, v. 21, n. 22, p. 7491, doi. 10.3390/s21227491
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- Article
Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications.
- Published in:
- Energies (19961073), 2021, v. 14, n. 21, p. 7305, doi. 10.3390/en14217305
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- Article
Novel resonator providing class‐F oscillation with better performance compared with available alternatives.
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- International Journal of Circuit Theory & Applications, 2021, v. 49, n. 10, p. 3466, doi. 10.1002/cta.3120
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- Article