Works matching DE "JUNCTION transistors"

Results: 196

High‐Performance p‐NiO/β‐Ga2O3 Heterostructure Junction Field‐Effect Transistors with Mesa Field Plate Structure.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 5, p. 1, doi. 10.1002/pssr.202400395

By:

Luan, SuZhen;
Gu, WenChong

Publication type:

Article

Susceptor-based rapid thermal processing for forming ultra-shallow junctions.

Published in:

Solid State Technology, 2000, v. 43, n. 4, p. 50

By:

Atanos, Ashur I.;
Daviet, Jean-Francois;
Parihar, Vijay

Publication type:

Article

Multifunctional WSe2/SnSe2/WSe2 van der Waals heterostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 15, p. 11841, doi. 10.1007/s10854-022-08147-3

By:

Abderrahmane, Abdelkader;
Woo, Changlim;
Ko, Pil Ju

Publication type:

Article

Double-polysilicon self-aligned lateral bipolar transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 183, doi. 10.1007/s10854-007-9300-y

By:

Pengpad, P.;
Bagnall, D. M.

Publication type:

Article

ANALYSIS OF POWER LOSSES IN MULTILEVEL PULSE-WIDTH MODULATION INVERTERS.

Published in:

Eastern-European Journal of Enterprise Technologies, 2022, v. 116, n. 5, p. 31, doi. 10.15587/1729-4061.2022.252771

By:

Manat, Symbat;
Yugay, Vyacheslav;
Kaliaskarov, Nurbol

Publication type:

Article

A 2.41 ppm/°C bandgap voltage reference with second‐order curvature compensation.

Published in:

International Journal of Circuit Theory & Applications, 2024, v. 52, n. 11, p. 5539, doi. 10.1002/cta.4021

By:

Jia, Shichao;
Ye, Tianchun;
Xiao, Shimao

Publication type:

Article

A hybrid amplifier topology for low‐noise direct‐coupled front ends.

Published in:

International Journal of Circuit Theory & Applications, 2024, v. 52, n. 9, p. 4783, doi. 10.1002/cta.3989

By:

Spinelli, Enrique M.;
Haberman, Marcelo A.;
Guerrero, Federico N.

Publication type:

Article

A bipolar junction transistor EMC modeling method based on physical characteristic measurement and simplex optimization.

Published in:

International Journal of Circuit Theory & Applications, 2024, v. 52, n. 2, p. 551, doi. 10.1002/cta.3797

By:

Pan, Zeyu;
Zhang, Yu;
Ren, Dan;
Yang, Jinsheng;
Nie, Bao‐Lin;
Du, Pingan

Publication type:

Article

Novel resonator providing class‐F oscillation with better performance compared with available alternatives.

Published in:: International Journal of Circuit Theory & Applications, 2021, v. 49, n. 10, p. 3466, doi. 10.1002/cta.3120
Publication type:: Article

Series‐type charger with output voltage automatically regulated and hot swap.

Published in:

International Journal of Circuit Theory & Applications, 2019, v. 47, n. 4, p. 633, doi. 10.1002/cta.2597

By:

Hwu, Kuo‐Ing;
Liu, Hsiu‐Pang

Publication type:

Article

A systematic class AB state space synthesis method based on MOSFET square law and translinear square-root cells.

Published in:

International Journal of Circuit Theory & Applications, 2015, v. 43, n. 12, p. 241, doi. 10.1002/cta.2054

By:

Surav Yilmaz, Saziye;
Tola, Abdullah T.

Publication type:

Article

Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-39705-w

By:

Zhou, Yaoqiang;
Tong, Lei;
Chen, Zefeng;
Tao, Li;
Pang, Yue;
Xu, Jian-Bin

Publication type:

Article

Editorial.

Published in:

2024

By:

Male, Sally A.

Publication type:

Editorial

Development of the Bipolar Junction Transistor Diagnostic Test (BJTDT) to explore the second-year undergraduate Myanmar electronic and Thai electrical engineering students' understanding of BJT working principles and applications.

Published in:

Australasian Journal of Engineering Education, 2024, v. 29, n. 1, p. 66, doi. 10.1080/22054952.2024.2347792

By:

Khin, Myat Noe;
Nopparatjamjomras, Suchai;
Chittaree, Ratchapak;
Nopparatjamjomras, Thasaneeya Ratanaroutai

Publication type:

Article

Unusual Operation of the Junction Transistor Based on Dynamical Behavior of Impurities.

Published in:

Advances in Condensed Matter Physics, 2018, p. 1, doi. 10.1155/2018/4237686

By:

Baca Arroyo, Roberto

Publication type:

Article

EFFICIENCY DROOP IN GaInN HIGH-POWER LIGHT-EMITTING DIODES.

Published in:

International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 2, p. 247, doi. 10.1142/S0129156411006581

By:

SCHUBERT, MARTIN F.;
KIM, JONG KYU

Publication type:

Article

POWER ADAPTIVE CONTROL OF DENSE CONFIGURED SUPER-SELF-ALIGNED BACK-GATE PLANAR TRANSISTORS.

Published in:

International Journal of High Speed Electronics & Systems, 2007, v. 17, n. 1, p. 143, doi. 10.1142/S0129156407004357

By:

LIN, HAO;
LIU, HAITAO;
KUMAR, ARVIND;
AVCI, UYGAR;
VAN DELDEN, JAY S.;
TIWARI, SANDIP

Publication type:

Article

ENHANCING POWER ELECTRONIC DEVICES WITH WIDE BANDGAP SEMICONDUCTORS.

Published in:

International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 2, p. 545, doi. 10.1142/S0129156406003837

By:

Ozpineci, Burak;
Chenthavali, Madhu Sudi-ian;
Tolbert, Leon M.

Publication type:

Article

DSSBD: An intelligent Decision Support System for Residual Life Estimation of PN Junction Diode.

Published in:

Pertanika Journal of Science & Technology, 2018, v. 26, n. 3, p. 1241

By:

Shivani;
Bhargva, Cherry

Publication type:

Article

BATTLE FIELD DAMAGE REPAIR OF A HELICOPTER COMPOSITE FRAME-TO-SKIN JUNCTION.

Published in:

Journal of Battlefield Technology, 2009, v. 12, n. 2, p. 13

By:

Brunel, Jean-Evrard;
Gresle1, Benoit

Publication type:

Article

Systematic design of resonant microstrip sensors with sensitive coating.

Published in:

Microwave & Optical Technology Letters, 2002, v. 32, n. 1, p. 21, doi. 10.1002/mop.10081

By:

Pawlak, H.;
Jannsen, B.;
Jacob, A. F.

Publication type:

Article

A novel wide-angle polymeric X-junction using truncated-structural branches (TSB).

Published in:

Microwave & Optical Technology Letters, 1999, v. 22, n. 3, p. 197, doi. 10.1002/(SICI)1098-2760(19990805)22:3<197::AID-MOP13>3.0.CO;2-X

By:

Pandit, M. K.;
Chan, H. P.;
Chiang, K. S.;
Ghosh, S.;
Das, A. K.

Publication type:

Article

SELF-TIMED p-i-n -- HBT PPM RECEIVERS.

Published in:

Microwave & Optical Technology Letters, 1994, v. 7, n. 13, p. 610, doi. 10.1002/mop.4650071308

By:

Elmirghani, J. M. H.

Publication type:

Article

ANALYSIS OF MICROSTRIP MULTIPORT JUNCTIONS USING THE MULTIMODE BOUNDARY INTEGRAL METHOD.

Published in:

Microwave & Optical Technology Letters, 1994, v. 7, n. 1, p. 22, doi. 10.1002/mop.4650070110

By:

Gan, Y. B.;
Leong, M. S.;
Kool, P. S.

Publication type:

Article

Optical modulation of the effective channel thickness in GaAs field effect transistors with a Schottky gate (MESFETs).

Published in:

Journal of Applied Spectroscopy, 2006, v. 73, n. 3, p. 394, doi. 10.1007/s10812-006-0089-x

By:

Bocharova, I. A.

Publication type:

Article

A low‐power NPN‐based band‐gap voltage reference in an ultra‐wide temperature range.

Published in:

Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 9, p. 1, doi. 10.1049/ell2.12808

By:

Xue, Weidong;
Zhang, Yiseng;
Fang, Jian;
Ren, Junyan

Publication type:

Article

A FR4‐based compact VCO with wide tuning range using SISL transformed triple‐tanks.

Published in:

Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 20, p. 764, doi. 10.1049/ell2.12251

By:

Fu, Haipeng;
Ma, Kaige;
Ma, Kaixue;
Wang, Yongqiang

Publication type:

Article

Dynamic characteristics after bias stress of GaN HEMTs with field plate on free‐standing GaN substrate.

Published in:

Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 15, p. 591, doi. 10.1049/ell2.12201

By:

Ma, Qiang;
Ando, Yuji;
Wakejima, Akio

Publication type:

Article

in brief.

Published in:: Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 7, p. 314, doi. 10.1049/el.2020.0743
Publication type:: Article

Vertical bipolar junction transistor triggered silicon-controlled rectifier for nanoscale ESD engineering.

Published in:

Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 7, p. 350, doi. 10.1049/el.2019.3864

By:

Feibo Du;
Fei Hou;
Wenqiang Song;
YiChen Xu;
Jizhi Liu;
Zhiwei Liu;
Liou, Juin J.

Publication type:

Article

MEMS 压电矢量水听器低噪声前置放大电路.

Published in:

Piezoelectrics & Acoustooptics, 2024, v. 46, n. 4, p. 550, doi. 10.11977/j.issn.1004-2474.2024.04.022

By:

邓威;
樊青青;
李俊红;
马军;
孔超

Publication type:

Article

Josephson Effect in a Coulomb-Blockaded SINIS Junction.

Published in:

JETP Letters, 2005, v. 82, n. 12, p. 763, doi. 10.1134/1.2175245

By:

Ostrovsky, P. M.;
Feigel'man, M. V.

Publication type:

Article

Transitions between Electron Transporting Mechanisms in Molecular Junctions and Transistors.

Published in:

Journal of the Chinese Chemical Society, 2014, v. 61, n. 1, p. 101, doi. 10.1002/jccs.201300504

By:

Kuo, Chun-Ting;
Su, Li-Chen;
Chen, Chun-hsien

Publication type:

Article

Fully GaN Monolithic Integrated Light Emitting Triode‐on‐Bipolar Junction Transistor Device Drivable with Small Current Signals and Its Frequency Response Characteristic: A Modeling and Simulation Study.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 24, p. 1, doi. 10.1002/pssa.202200606

By:

Hao, Shaokun;
Ye, Jinyu;
Guo, Chenguang;
Zhou, Xiongtu;
Zhang, Yongai;
Wu, Chaoxing;
Guo, Tailiang;
Sun, Jie;
Yan, Qun;
Zhan, Fan;
Liu, Hengshan

Publication type:

Article

Operation of Magnetic Vortex Transistor by Spin‐Polarized Current: A Micromagnetic Approach.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 7, p. 1, doi. 10.1002/pssa.202100564

By:

Bhattacharjee, Payal;
Barman, Anjan;
Barman, Saswati

Publication type:

Article

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.

Published in:

Nature Communications, 2017, v. 8, n. 1, p. 1, doi. 10.1038/s41467-017-02093-z

By:

Tiefeng Yang;
Biyuan Zheng;
Zhen Wang;
Tao Xu;
Chen Pan;
Juan Zou;
Xuehong Zhang;
Zhaoyang Qi;
Hongjun Liu;
Yexin Feng;
Weida Hu;
Feng Miao;
Litao Sun;
Xiangfeng Duan;
Anlian Pan

Publication type:

Article

TRANSIT TIME MODEL ANALYSIS THROUGH THE BASIS IN THE CASE OF DRIFT TRANSISTORS HBT.

Published in:

Journal of Science & Arts, 2022, v. 22, n. 2, p. 507, doi. 10.46939/J.Sci.Arts-22.2-c01

By:

PREDUSCA, GABRIEL

Publication type:

Article

COMPARATIVE ASSESSMENT BETWEEN A COUNTERFEITED AND A GENUINE POWER BJT.

Published in:

Journal of Science & Arts, 2020, v. 20, n. 3, p. 775, doi. 10.46939/J.Sci.Arts-20.3-c04

By:

MIRON-ALEXE, VIOREL

Publication type:

Article

Design Features of Op-Amp Based on Bipolar Transistors for Anti-Aliasing Active LPF with a Low Systematic Component of Zero Offset Voltage.

Published in:

IUP Journal of Electrical & Electronics Engineering, 2022, v. 15, n. 3, p. 24

By:

Chumakov V. E.;
Serebryakov A. I.;
Titov A. E.;
Prokopenko N. N.

Publication type:

Article

Added Noise in Oscillators Caused by the Transistor Base Emitter Breakdown Phenomenon.

Published in:

IETE Journal of Research, 2023, v. 69, n. 2, p. 1045, doi. 10.1080/03772063.2020.1847702

By:

Griebel, Wolfgang;
Rudolph, Matthias;
Rohde, Ulrich L.

Publication type:

Article

Animation Based Learning of Electronic Devices.

Published in:

Advances in Engineering Education, 2014, v. 4, n. 1, p. 1

By:

GERO, AHARON;
ZOABI, WISHAH;
SABAG, NISSIM

Publication type:

Article

Experimental Observation of Oscillating Wave Propagation on Switch Lines for Generation of Continuous Electromagnetic Waves.

Published in:

Research Letters in Signal Processing, 2009, v. 2009, p. 1, doi. 10.1155/2009/816806

By:

Narahara, Koichi;
Yokota, Akihiro

Publication type:

Article

An EMC Susceptibility Study of Integrated Basic Bandgap Voltage Reference Cores.

Published in:

Radioengineering, 2022, v. 31, n. 3, p. 413, doi. 10.13164/re.2022.0413

By:

KROLAK, David;
HORSKY, Pavel

Publication type:

Article

Novel Resistorless First-Order Current-Mode Universal Filter Employing a Grounded Capacitor.

Published in:

Radioengineering, 2011, v. 20, n. 3, p. 656

By:

ARSLANALP, Remzi;
TOLA, Abdullah T.;
YUCE, Erkan

Publication type:

Article

Chaotic dynamics in memristive circuits.

Published in:

Caderno Brasileiro de Ensino de Física, 2023, v. 45, p. 1, doi. 10.1590/1806-9126-RBEF-2023-0116

By:

Iarosz, Kelly C.;
Gabrick, Enrique C.;
Trobia, José;
Borges, Rafael R.;
Protachevicz, Paulo R.;
Bonetti, Robson C.;
de Souza, Silvio L. T.;
Batista, Gabriel L.;
Szezech Jr., José D.;
Caldas, Iberê L.;
Batista, Antonio M.

Publication type:

Article

A Low-Cost Pre-Amplifier for Low-Current Measurement with Temperature Compensation.

Published in:

Journal of Integrated Circuits & Systems, 2020, v. 15, n. 3, p. 1, doi. 10.29292/jics.v15i3.186

By:

Telles, Antonio C. C.;
Emeri Jr., Jair L.;
Finco, Saulo;
Seixas, L. E.

Publication type:

Article

MoS2/GaN Junction Field‐Effect Transistors with Ultralow Subthreshold Swing and High On/Off Ratio via Thickness Engineering for Logic Inverters.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 52, p. 1, doi. 10.1002/adfm.202410954

By:

Zhou, Yao;
Li, Fei;
Li, Wenfeng;
Chen, Jianru;
Gao, Jiahao;
Huang, Jianming;
Zhao, Liang;
Zhao, Tu;
Li, Jiabin;
Zheng, Tao;
Pan, Zhidong;
Zheng, Zhaoqiang;
Huo, Nengjie;
Luo, Dongxiang;
Yang, Mengmeng;
Wang, Xingfu;
Chen, Wenlong;
Sun, Yiming;
Gao, Wei

Publication type:

Article

Thinning Solution‐proceed 2D Te for p‐ and n‐channel Junction Field Effect Transistor with High Mobility and Ideal Subthreshold Slope.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 32, p. 1, doi. 10.1002/adfm.202316488

By:

Zhu, Lingyu;
Zhang, Jielian;
Chen, Xinhao;
Bu, Nabuqi;
Zheng, Tao;
Gao, Wei;
Li, Fei;
Zhao, Yiming;
Sun, Yiming;
Li, Shasha;
Huo, Nengjie;
Li, Jingbo

Publication type:

Article

An H-shaped harmonic suppression active integrated antenna.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2006, v. 16, n. 3, p. 245, doi. 10.1002/mmce.20148

By:

Qing-Xin Chu;
Meng Hou

Publication type:

Article

Fast Method of Computations of Ripples in the Junction Temperature of Discrete Power SiC-MOSFETs at the Steady State.

Published in:

Applied Sciences (2076-3417), 2022, v. 12, n. 17, p. 8887, doi. 10.3390/app12178887

By:

Górecki, Krzysztof;
Górecki, Paweł

Publication type:

Article