Works matching DE "ION implantation"

Results: 1407

Junction Modeling and Experimentation of Small-Pitch MWIR n-on-p HgCdTe Photodiodes with 3D Simulator Solution.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 7, p. 5723, doi. 10.1007/s11664-025-12008-0

By:

Gan, Zhikai;
Zhao, Yu;
Sun, Quanzhi;
Zhou, Songmin;
Wang, Xi;
Li, Xun;
Zhu, Liqi;
Lin, Chun;
He, Li

Publication type:

Article

Surface Morphology of Aluminum Foil with Implanted Titanium.

Published in:

Theoretical & Experimental Chemistry, 2024, v. 60, n. 5, p. 321, doi. 10.1007/s11237-025-09834-y

By:

Zazhigalov, V. O.;
Sanzhak, O. V.;
Bacherikova, I. V.;
Diyuk, O. A.;
Nowakowski, R.

Publication type:

Article

Laser activation of single group-IV colour centres in diamond.

Published in:

Nature Communications, 2025, v. 16, n. 1, p. 1, doi. 10.1038/s41467-025-60373-5

By:

Cheng, Xingrui;
Thurn, Andreas;
Chen, Guangzhao;
Jones, Gareth S.;
Bennett, James E.;
Coke, Maddison;
Adshead, Mason;
Michaels, Cathryn P.;
Balci, Osman;
Ferrari, Andrea C.;
Atatüre, Mete;
Curry, Richard J.;
Smith, Jason M.;
Salter, Patrick S.;
Gangloff, Dorian A.

Publication type:

Article

Defects in Silicon Carbide as Quantum Qubits: Recent Advances in Defect Engineering.

Published in:

Applied Sciences (2076-3417), 2025, v. 15, n. 10, p. 5606, doi. 10.3390/app15105606

By:

Capan, Ivana

Publication type:

Article

Optical Properties of GePb Alloy Realized by Ion Beam Technology.

Published in:

Materials (1996-1944), 2025, v. 18, n. 10, p. 2258, doi. 10.3390/ma18102258

By:

Wen, Shuyu;
Zhu, Yuan-Hao;
Steuer, Oliver;
Shaikh, Mohd Saif;
Prucnal, Slawomir;
Hübner, René;
Worbs, Andreas;
He, Li;
Helm, Manfred;
Zhou, Shengqiang;
Luo, Jun-Wei;
Berencén, Yonder

Publication type:

Article

Implanter, RTP system issues for ultrashallow junction formation.

Published in:

Solid State Technology, 2001, v. 44, n. 9, p. 77

By:

Amen, Mike;
Hebb, Jeffrey

Publication type:

Article

Japanese companies design multifunction minifab tools.

Published in:

Solid State Technology, 2001, v. 44, n. 6, p. 83

By:

Okumura, Katsuya;
Mikata, Yu-ichi;
Suguro, Kyoichi;
Tsunashima, Yoshitaka;
Shimazaki, Ayako

Publication type:

Article

Conventional beamline implantation of decaborane.

Published in:

Solid State Technology, 2001, v. 44, n. 6, p. 77

By:

Vella, Michael C.

Publication type:

Article

MRS Spring Meeting: More science, less art.

Published in:: Solid State Technology, 2001, v. 44, n. 6, p. 42
Publication type:: Article

Critical doping trends driving advanced USJ metrology.

Published in:

Solid State Technology, 2001, v. 44, n. 1, p. 69

By:

Borden, Peter

Publication type:

Article

A new era for high-current, low-energy ion implantation.

Published in:

Solid State Technology, 2000, v. 43, n. 11, p. 103

By:

Parrill, Thomas M.;
Ameen, Michael S.;
Graf, Michael;
Mazzola, Richard

Publication type:

Article

A closer look at some of the most difficult processing challenges.

Published in:

Solid State Technology, 2000, v. 43, n. 9, p. 81

By:

Burggraaf, Pieter

Publication type:

Article

Low-energy ion implant.

Published in:: Solid State Technology, 2000, v. 43, n. 8, p. 135
Publication type:: Article

Hot topics at MRS: low-k, dopant profiling, copper.

Published in:

Solid State Technology, 2000, v. 43, n. 6, p. 50

By:

Demmin, Jeff;
Haavind, Bob

Publication type:

Article

An improved secondary electron flood helps control ion implant charge.

Published in:

Solid State Technology, 2000, v. 43, n. 4, p. 63

By:

Fleming, David A.;
Mullis, Celeste

Publication type:

Article

Pressure measurement in ion implanters.

Published in:

Solid State Technology, 2000, v. 43, n. 2, p. 51

By:

Bopp, Eric

Publication type:

Article

Formation of ultra-shallow junctions by ion implantation and RTA.

Published in:

Solid State Technology, 1998, v. 41, n. 12, p. 43

By:

Foad, Majeed A.;
Jennings, Dean

Publication type:

Article

Hazardous gases emitted by ion implanters: Characterization and abatement.

Published in:

Solid State Technology, 1998, v. 41, n. 10, p. 113

By:

Arno, Josep;
Hayes, Michael

Publication type:

Article

Japan.

Published in:: Solid State Technology, 1998, v. 41, n. 7, p. 38
Publication type:: Article

Implantation damage and transient enhanced diffusion modeling.

Published in:

Solid State Technology, 1998, v. 41, n. 2, p. 97

By:

Giles, Martin D.;
Shaofeng Yu;
Kennel, Harold W.;
Packan, Paul A.

Publication type:

Article

Ultrashallow junction formation by ion implant and RTA.

Published in:

Solid State Technology, 1997, v. 40, n. 12, p. 71

By:

Downey, Daniel F.;
Osburn, Carlton M.

Publication type:

Article

Improving p-Type Doping in Gallium Nitride through Magnesium Diffusion.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4350, doi. 10.1007/s11664-025-11882-y

By:

Dishman, Haley E.;
Meilander, Owen R.;
Ebrish, Mona A.

Publication type:

Article

Comparison Between Epitaxial and Implanted Aluminum-Doped 4H-SiC.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4287, doi. 10.1007/s11664-024-11645-1

By:

Das, Suman;
Lichtenwalner, Daniel J.;
Stein, Shane;
Park, Jae;
Steinmann, Philipp;
Ryu, Sei-Hyung

Publication type:

Article

Low-Energy Xe Ion Beam-Mediated Defect Engineering in Optical, Electronic, Structural, and Morphological Properties of Sputtered MoS2 Thin Films.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 12, p. 7456, doi. 10.1007/s11664-024-11458-2

By:

Bharti, Aniket;
Gupta, Deepika;
Deepika;
Khanna, Manoj Kumar;
Kumar, Rajesh

Publication type:

Article

Modification of the Properties of CdSe Nanowires by Argon Ion Implantation.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 9, p. 5073, doi. 10.1007/s11664-024-11143-4

By:

Narula, Chetna;
Chauhan, R. P.;
Garg, Ajay;
Rana, Pallavi;
Panchal, Suresh;
Gupta, Renu

Publication type:

Article

Modification of the Properties of Titanium Carbide MXene by Ag Doping via Ion Implantation for Quantum Dot-Sensitized Solar Cell Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 9, p. 5007, doi. 10.1007/s11664-024-11063-3

By:

Singh, Iqbal;
Devi, Devrani;
Singh, Fouran;
Chopra, Sundeep;
Mahajan, Aman

Publication type:

Article

Study of Dopant Activation and Ionization for Phosphorus in 4H-SiC.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 2806, doi. 10.1007/s11664-024-10976-3

By:

Das, Suman;
Lichtenwalner, Daniel J.;
Dixit, Hemant;
Rogers, Steven;
Scholze, Andreas;
Ryu, Sei-Hyung

Publication type:

Article

Positive pulses in HiPIMS enhance Ti-PEEK interface formation.

Published in:

Surface Engineering, 2025, v. 41, n. 2, p. 259, doi. 10.1177/02670844241310431

By:

Cvrček, Ladislav;
Nehasil, Václav;
Buřil, Matěj

Publication type:

Article

Photoelectrochemical and photocatalytic activities of improved TiO2 nanotubes using Ag+ ion implantation and RGO deposition.

Published in:

Surface Engineering, 2022, v. 38, n. 1, p. 79, doi. 10.1080/02670844.2022.2045786

By:

Liao, Bin;
Chen, Lin;
Luo, Jun;
Pang, Pan;
Wang, Guoliang

Publication type:

Article

Tribological behaviour of titanium alloy modified by carbon-DLC composite film.

Published in:

Surface Engineering, 2015, v. 31, n. 12, p. 934, doi. 10.1179/1743294414Y.0000000452

By:

Wang, S.;
Wang, F.;
Liao, Z.;
Wang, Q.;
Tyagi, R.;
Liu, W.

Publication type:

Article

Structure evolution and mechanical properties of Ta-Nb-Ti-W-N multielement films.

Published in:

Surface Engineering, 2014, v. 30, n. 11, p. 842, doi. 10.1179/1743294414Y.0000000329

By:

Feng, X. G.;
Ma, X. X.;
Tang, G. Z.;
Zhou, H.

Publication type:

Article

Effects of carbon and nitrogen ion implantations on surface and tribological properties of Ti-Al-Si-N coatings.

Published in:

Surface Engineering, 2012, v. 28, n. 2, p. 149, doi. 10.1179/1743294411Y.0000000071

By:

Shum, P W;
Xu, Y F;
Zhou, Z F;
Li, K Y

Publication type:

Article

Tribological behaviour of plasma based low energy nitrogen ion implanted AISI 316 austenitic stainless steel against same stainless steel counterface.

Published in:

Surface Engineering, 2010, v. 26, n. 4, p. 277, doi. 10.1179/026708410X12671039164606

By:

Lei, M. K.;
Zhou, Q.;
Ou, Y. X.;
Song, T. K.;
Guo, Y.

Publication type:

Article

Enhancement of surface properties of AISI 8620 by plasma immersion ion implantation.

Published in:

Surface Engineering, 2008, v. 24, n. 3, p. 176, doi. 10.1179/174329408X281803

By:

Saklakoglu, I. E.

Publication type:

Article

Enhancement of hardness and corrosion resistance of low alloy high carbon steel by plasma immersion ion implantation.

Published in:

Surface Engineering, 2008, v. 24, n. 1, p. 4, doi. 10.1179/174329407X265875

By:

Rao, K. Ram Mohan;
Mukherjee, S.;
Roy, S. K.;
Manna, I.

Publication type:

Article

Tribological behaviour of plasma immersion ion implanted AISI 304 stainless steel against polymer and ceramic counterfaces.

Published in:

Surface Engineering, 2007, v. 23, n. 4, p. 257, doi. 10.1179/174329407X215177

By:

Saklakoğlu, N.;
Saklakoğlu, I. E.;
Ceyhun, V.;
Ağaçhan, N.;
Short, K. T.;
Collins, G. A.

Publication type:

Article

Abstracts.

Published in:: Surface Engineering, 2003, v. 19, n. 5, p. 395, doi. 10.1179/026708403322703076
Publication type:: Article

New Method for Preparing Cubic Boron Nitride Hardened Layers.

Published in:

Surface Engineering, 2003, v. 19, n. 5, p. 369, doi. 10.1179/026708403225007554

By:

Wang, J.;
Liu, X.;
Wang, X.;
Chen, Y.

Publication type:

Article

TiO2 Nanotubes: Nitrogen-Ion Implantation at Low Dose Provides Noble-Metal-Free Photocatalytic H2-Evolution Activity.

Published in:

Angewandte Chemie, 2016, v. 128, n. 11, p. 3827, doi. 10.1002/ange.201511580

By:

Zhou, Xuemei;
Häublein, Volker;
Liu, Ning;
Nguyen, Nhat Truong;
Zolnhofer, Eva M.;
Tsuchiya, Hiroaki;
Killian, Manuela S.;
Meyer, Karsten;
Frey, Lothar;
Schmuki, Patrik

Publication type:

Article

X-ray induced Sm-ion valence conversion in Sm-ion implanted fluoroaluminate glasses towards high-dose radiation measurement.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 18, p. 16740, doi. 10.1007/s10854-019-01212-4

By:

Chicilo, Farley;
Koughia, Cyril;
Curry, Richard;
Gwilliam, Russel;
Ahumada-Lazo, Ruben;
Edgar, Andy;
Binks, David J.;
Chapman, Dean;
Kasap, Safa

Publication type:

Article

Improved resistive switching characteristics of atomic layer deposited Al2O3/La2O3/Al2O3 multi-stacked films with Al+ implantation.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 13, p. 12577, doi. 10.1007/s10854-019-01618-0

By:

Wang, Xing;
Liu, Hongxia;
Zhao, Lu;
Wang, Yongte;
Wang, Shulong

Publication type:

Article

Design and preparation of integrated voltage divider for silicon drift detector by ion implantation.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 11, p. 10152, doi. 10.1007/s10854-019-01351-8

By:

Liu, Sai;
Xue, Yuming;
Jia, Rui;
Tao, Ke;
Jiang, Shuai;
Wu, Yiqing;
Sun, Haoyu;
Guo, Qing;
Zhang, Liming;
Feng, Shaojun

Publication type:

Article

High-resistance voltage dividers fabricated by thin polysilicon films in silicon drift detectors.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 7, p. 6617, doi. 10.1007/s10854-019-00969-y

By:

Jiang, Shuai;
Jia, Rui;
Tao, Ke;
Wu, Yiqing;
Liu, Sai

Publication type:

Article

Wetting and interfacial behavior of molten Al-Si alloys on SiC monocrystal substrates: effects of Cu or Zn addition and Pd ion implantation.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 20, p. 17416, doi. 10.1007/s10854-018-9839-9

By:

Huang, Zhikun;
Xu, Wenlong;
Liu, Guiwu;
Wang, Tingting;
Zhang, Xiangzhao;
Qiao, Guanjun

Publication type:

Article

Optical characterization of the HgCdTe-based composite structure obtained by Ag ion implantation.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 18, p. 15708, doi. 10.1007/s10854-018-9177-y

By:

Smirnov, A. B.;
Savkina, R. K.;
Nasieka, Iu. M.;
Strelchuk, V. V.;
Demchenko, I. N.;
Kryshtab, T.

Publication type:

Article

Ion implantation effects of negative oxygen on copper nanowires.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 14, p. 9998, doi. 10.1007/s10854-017-6757-1

By:

Rana, Pallavi;
Narula, Chetna;
Chauhan, R.;
Rani, Anita;
Gupta, Rashi;
Kumar, Rajesh

Publication type:

Article

Fabrication and characterization of p-type In-N codoped ZnMgO films.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 13, p. 9316, doi. 10.1007/s10854-017-6669-0

By:

Zhang, Hong;
Kong, Chunyang;
Li, Wanjun;
Qin, Guoping;
Tan, Mi;
Ruan, Haibo;
Fang, Liang

Publication type:

Article

Optical characterization of nanocomposite polymer formed by ion implantation of boron.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 10, p. 7115, doi. 10.1007/s10854-017-6523-4

By:

Trzciński, Mariusz;
Kavetskyy, Taras;
Telbiz, German;
Stepanov, Andrey

Publication type:

Article

The magnetic field effect on optical properties of Sm-doped GaN thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 7, p. 2974, doi. 10.1007/s10854-014-1969-0

By:

Sun, Pan;
Li, Yanchen;
Meng, Xianquan;
Yu, Sheng;
Liu, Yihe;
Liu, Fengqi;
Wang, Zhanguo

Publication type:

Article

Study of nanopipes formed in silicon wafers using helium implantation by SEM, RBS and SIMS methods.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 239, doi. 10.1007/s10854-008-9654-9

By:

Frantskevich, A. V.;
Saad, A. M.;
Mazanik, A. V.;
Frantskevich, N. V.;
Fedotov, A. K.;
Kulinkauskas, V. S.;
Patryn, A. A.

Publication type:

Article