Works matching DE "INTERMODULATION distortion"

Results: 141

2D curtailed harmonic memory polynomial for reduced complexity in concurrent dual-band modelling and digital predistortion with the second band at harmonic frequency.

Published in:

IET Communications (Wiley-Blackwell), 2018, v. 12, n. 12, p. 1438, doi. 10.1049/iet-com.2017.1376

By:

Rawat, Meenakshi;
Jaraut, Praveen;
Ghannouchi, Fadhel M.

Publication type:

Article

2D curtailed harmonic memory polynomial for reduced complexity in concurrent dual‐band modelling and digital predistortion with the second band at harmonic frequency.

Published in:

IET Communications (Wiley-Blackwell), 2018, v. 12, n. 11, p. 1438, doi. 10.1049/iet-com.2017.1376

By:

Jaraut, Praveen;
Rawat, Meenakshi;
Ghannouchi, Fadhel M.

Publication type:

Article

Enhanced RF analog linearity in metal gate modulated heterojunction based uniform TFET for label-free detection of dengue NS1 protein.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-08892-5

By:

T, Ranjith Kumar;
G, Lakshmi Priya

Publication type:

Article

Design of Wide-band Power Amplifier Based on Power Combiner Technique with Low Intermodulation Distortion.

Published in:

International Journal of Electrical & Computer Engineering (2088-8708), 2018, v. 8, n. 5, p. 3504, doi. 10.11591/ijece.v8i5.pp3504-3511

By:

Mabrok, Mussa;
Zakaria, Zahriladha;
Saifullah, Nasrullah

Publication type:

Article

Negative resistance amplifier circuit using GaAsFET modelled single MESFET.

Published in:

Telkomnika, 2020, v. 18, n. 1, p. 179, doi. 10.12928/TELKOMNIKA.v18i1.10120

By:

Ojewande, Olasunkanmi;
Ndujiuba, Charles;
Adelakun, Adebiyi A.;
Popoola, Segun I.;
Atayero, Aderemi A.

Publication type:

Article

A 1.2V, low-power, and high linear UWB down-conversion CMOS mixer.

Published in:

Engineering & Applied Science Research, 2021, v. 48, n. 3, p. 280, doi. 10.14456/easr.2021.30

By:

Yargholi, Mostafa;
Darvishi, Farshad

Publication type:

Article

Simultaneous Suppression of IMD3 and IMD5 in Space TWT by IMD3 and 2HD Signal Injection.

Published in:

Active & Passive Electronic Components, 2017, p. 1, doi. 10.1155/2017/4721048

By:

Zhao, Dongming;
Liu, Huijuan;
Xia, Kewen;
Li, Shi;
Shi, Xiaoxu

Publication type:

Article

High-Linearity Dual-Parallel Mach–Zehnder Modulators in Thin-Film Lithium Niobate.

Published in:

Photonics, 2024, v. 11, n. 10, p. 987, doi. 10.3390/photonics11100987

By:

Yang, Tao;
Cai, Lutong;
Huang, Zhanhua;
Zhang, Lin

Publication type:

Article

The Optimal Operating Point for Linearizing an Integrated Optical Lithium Niobate Directional Coupler Modulator †.

Published in:

Photonics, 2024, v. 11, n. 1, p. 48, doi. 10.3390/photonics11010048

By:

Agruzov, Peter;
Parfenov, Mikhail;
Ilichev, Igor;
Varlamov, Andrei;
Tronev, Aleksandr;
Shamrai, Aleksandr

Publication type:

Article

A Design of All-Optical Integrated Linearized Modulator Based on Asymmetric Mach-Zehnder Modulator.

Published in:

Photonics, 2023, v. 10, n. 3, p. 229, doi. 10.3390/photonics10030229

By:

Zhao, Yiru;
Li, Jinye;
Xiang, Zichuan;
Liu, Jianguo

Publication type:

Article

Linearity-Enhanced Dual-Parallel Mach–Zehnder Modulators Based on a Thin-Film Lithium Niobate Platform.

Published in:

Photonics, 2022, v. 9, n. 3, p. 197, doi. 10.3390/photonics9030197

By:

Huang, Xingrui;
Liu, Yang;
Tu, Donghe;
Yu, Zhiguo;
Wei, Qingquan;
Li, Zhiyong

Publication type:

Article

Nonlinear Distortion Mitigation in Multi-IF over Fiber Transmission Using Modulation-Based Adaptive Power Allocation.

Published in:

Photonics, 2021, v. 8, n. 1, p. 2, doi. 10.3390/photonics8010002

By:

Ha, Inho;
Park, Hyoung-Joon;
Kang, Soo-Min;
Han, Sang-Kook

Publication type:

Article

宽带多载波微波光链路多源非线性数字补偿方法.

Published in:

Telecommunication Engineering, 2022, v. 62, n. 6, p. 762, doi. 10.3969/j.issn.1001-893x.2022.06.011

By:

宁婕妤;
王群

Publication type:

Article

A Dual-Mode CMOS Power Amplifier with an External Power Amplifier Driver Using 40 nm CMOS for Narrowband Internet-of-Things Applications.

Published in:

Nanomaterials (2079-4991), 2024, v. 14, n. 3, p. 262, doi. 10.3390/nano14030262

By:

Ahn, Hyunjin;
Oh, Kyutaek;
Choi, Se-Eun;
Son, Dong-Hee;
Nam, Ilku;
Lim, Kyoohyun;
Lee, Ockgoo

Publication type:

Article

Performance of 2.3.6 GHz Five-Port/Three-Phase Demodulators with Baseband Analog I/Q Regeneration Circuit in Direct-Conversion Receivers.

Published in:

Journal of Electrical & Computer Engineering, 2014, p. 1, doi. 10.1155/2014/631867

By:

Abdou, Kaissoine;
Khy, Antoine;
Mabrouk, Kais;
Huyart, Bernard

Publication type:

Article

Effect of Hetero-Dielectric Gate on Direct Current, Radio Frequency/Analog, and Linearity Performance of Dual-Source Vertical Tunnel Field Effect Transistor for Low-Power Applications.

Published in:

Semiconductors, 2025, v. 59, n. 7, p. 650, doi. 10.1134/S1063782625600664

By:

Singh, Sheetal;
Wairya, Subodh

Publication type:

Article

Study of Oxide Material Variation on Electrical Characteristics and Linearity Parameters Induced in Vertical Nanowire TFET.

Published in:

Semiconductors, 2025, v. 59, n. 5, p. 474, doi. 10.1134/S1063782625600494

By:

Bhardwaj, Anjana;
Das, Amit;
Rai, Amrita;
Krishna, Ram;
Upadhyay, A. K.

Publication type:

Article

Performance Assessment of High-k SOI GaN FinFET with Different Fin Aspect Ratio for RF/Wireless Applications.

Published in:

Wireless Personal Communications, 2024, v. 136, n. 2, p. 867, doi. 10.1007/s11277-024-11293-y

By:

Rajawat, Vandana Singh;
Choudhary, Bharat;
Kumar, Ajay

Publication type:

Article

Effect of ITCs on gate stacked JL-TFET based on work-function engineering.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 12, p. 1238, doi. 10.1049/mnl.2019.0252

By:

Bhardwaj, Eshaan;
Nigam, Kaushal;
Choubey, Shubham;
Chaturvedi, Savitesh

Publication type:

Article

Impact of Graded AlGaN Buffer Layer Thickness on the DC, RF, Linearity, Intermodulation and Off-State Breakdown Characteristics of AlGaN Channel HEMT.

Published in:

IETE Technical Review, 2024, v. 41, n. 5, p. 602, doi. 10.1080/02564602.2024.2315628

By:

Anand, Anupama;
Narang, Rakhi;
Rawal, Dipendra Singh;
Mishra, Meena;
Saxena, Manoj;
Gupta, Mridula

Publication type:

Article

TCAD Investigation for Dual-Gate MISHEMT with Improved Linearity and Current Collapse for LNAs.

Published in:

IETE Technical Review, 2022, v. 39, n. 6, p. 1383, doi. 10.1080/02564602.2021.1997362

By:

Singh, Preeti;
Kumari, Vandana;
Saxena, Manoj;
Gupta, Mridula

Publication type:

Article

Influence of Franz Keldysh effect on the modulation depth and distortion characteristics of transistor laser.

Published in:

Applied Physics B: Lasers & Optics, 2024, v. 130, n. 6, p. 1, doi. 10.1007/s00340-024-08224-x

By:

Ramya, R.;
Piramasubramanian, S.;
Madhan, M. Ganesh

Publication type:

Article

A Low-Complexity Dual-Band Model for Dual-band Power Amplifiers Based on Volterra Series.

Published in:

Progress in Electromagnetics Research Letters, 2015, v. 53, p. 101, doi. 10.2528/pierl15042704

By:

Tianjing Zhang;
Cuiping Yu;
Yuanan Liu;
Shulan Li;
Bihua Tang

Publication type:

Article

LOW THIRD-ORDER INTERMODULATION DISTORTION IN Ba0.6Sr0.4TiO3 THIN FILM INTERDIGITAL CAPACITORS.

Published in:

Progress in Electromagnetics Research C, 2013, v. 44, p. 225, doi. 10.2528/pierc13090202

By:

Abdul Khalid, Muhammad F.;
Fardin, Ernest A.;
Scott, James R.;
Holland, Anthony S.;
Ghorbani, Kamran

Publication type:

Article

Digital linearization for broadband multicarrier analog photonic link incorporating downconversion.

Published in:

Optical Engineering, 2016, v. 55, n. 3, p. 1, doi. 10.1117/1.OE.55.3.031102

By:

Jieyu Ning;
Yitang Dai;
Feifei Yin;
Jianqiang Li;
Qiang Lv;
Kun Xua

Publication type:

Article

Optical data exchange of differential quadrature phase-shift keying based on four-wave mixing using a semiconductor optical amplifier.

Published in:

Optical Engineering, 2016, v. 55, n. 2, p. 1, doi. 10.1117/1.OE.55.2.026110

By:

Hongxiang Wang;
Nian Yi;
Yuefeng Ji

Publication type:

Article

All-optical broadcast technology based on aluminum-doped highly nonlinear fiber.

Published in:

Optical Engineering, 2014, v. 53, n. 10, p. 1, doi. 10.1117/1.OE.53.11.116107

By:

Lijuan Li;
Jinlong Yu;
Ju Wang;
Wenrui Wang;
Shi Jia;
Qiong Wu;
Lixia Dou;
Biao Huang

Publication type:

Article

Four-wave mixing in a ring cavity.

Published in:

Optical Engineering, 2014, v. 53, n. 10, p. 1, doi. 10.1117/1.OE.53.10.102709

By:

Mikhailov, Eugeniy E.;
Evans, Jesse;
Budker, Dmitry;
Rochester, Simon M.;
Novikovaa, Irina

Publication type:

Article

A General FEM Model for Analysis of Third-Order Nonlinearity in RF Surface Acoustic Wave Devices Based on Perturbation Theory.

Published in:

Micromachines, 2022, v. 13, n. 7, p. N.PAG, doi. 10.3390/mi13071116

By:

Li, Baichuan;
Zhang, Qiaozhen;
Zhao, Xiangyong;
Zhi, Shaotao;
Qiu, Luyan;
Fu, Sulei;
Wang, Weibiao

Publication type:

Article

Design and Analysis of a Hybrid-Type RF MEMS Phase Detector in X-Band.

Published in:

Micromachines, 2022, v. 13, n. 5, p. 786, doi. 10.3390/mi13050786

By:

Han, Juzheng;
Ding, Dazhi

Publication type:

Article

Dependence of Lateral Straggle Parameter on DC, RF/Analog, and Linearity Performance in SOI FinFET.

Published in:

IETE Journal of Research, 2023, v. 69, n. 8, p. 5574, doi. 10.1080/03772063.2021.1973915

By:

Saha, Rajesh;
Bhowmick, Brinda;
Baishya, Srimanta

Publication type:

Article

RF/Analog Performance Optimization and Assessing Linearity/Distortion FoMs of HDDP-DG-NCFET for Terahertz Applications.

Published in:

Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2024, v. 49, n. 5, p. 7179, doi. 10.1007/s13369-023-08671-2

By:

Malvika;
Choudhuri, B.;
Kavicharan, M.

Publication type:

Article

A Proposed Nonaligned Double Gate Junction FET Device and its Performance Improvement Using High-k Gate Oxide Material.

Published in:

NANO (1793-2920), 2023, v. 18, n. 6, p. 1, doi. 10.1142/S1793292023500406

By:

Sinha, Arun Kumar;
Naik, Banoth Vasu

Publication type:

Article

Effect of Barrier Thickness on Linearity of Underlap AlInN/GaN DG-MOSHEMTs.

Published in:

NANO (1793-2920), 2017, v. 12, n. 1, p. -1, doi. 10.1142/S1793292017500096

By:

Adak, Sarosij;
Swain, Sanjit Kumar;
Pardeshi, Hemant;
Rahaman, Hafizur;
Sarkar, Chandan Kumar

Publication type:

Article

Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: D. Chowdhury et al

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 5, p. 3480, doi. 10.1007/s11664-024-11548-1

By:

Chowdhury, Dibyendu;
DasMahapatra, Suddhendu;
De, Bishnu Prasad;
Maiti, Madhusudan;
Kar, Rajib;
Mandal, Durbadal;
Samanta, Jagannath

Publication type:

Article

Investigation of Core–Shell Junctionless Gate-Stack DG-FET in Low-Power Applications Using Charge-Based Modeling.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 1, p. 157, doi. 10.1007/s11664-023-10742-x

By:

Chattopadhyay, Ankush;
Bose, Chayanika

Publication type:

Article

Impact of Temperature on the Reliability of UTB-DG-FE-TFETs and Their RF/Analog and Linearity Parameter Dependence.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 9, p. 6293, doi. 10.1007/s11664-023-10556-x

By:

Gopal, Girdhar;
Varma, Tarun

Publication type:

Article

Small-Signal Analysis of Double-Channel AlGaN/GaN HEMT and MOSHEMT with Undoped Barrier for Microwave Applications.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 7, p. 4095, doi. 10.1007/s11664-022-09652-1

By:

Pal, Praveen;
Pratap, Yogesh;
Kabra, Sneha

Publication type:

Article

Linearity Performance and Distortion Analysis of Carbon Nanotube Tunneling FET.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 3, p. 1496, doi. 10.1007/s11664-020-08707-5

By:

Hussain, Sazzad;
Mustakim, Nafis;
Saha, Jibesh Kanti

Publication type:

Article

Technology computer‐aided design simulation of Ge‐source double‐gate Si‐tunnel Field Effect Transistor: Radio frequency and linearity analysis.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2022, v. 32, n. 10, p. 1, doi. 10.1002/mmce.23316

By:

Baruah, Karabi;
Debnath, Radhe Gobinda;
Baishya, Srimanta

Publication type:

Article

Study on impact of ferroelectric layer thickness on RF/analog and linearity parameters in ferroelectric‐FinFET.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2021, v. 31, n. 8, p. 1, doi. 10.1002/mmce.22704

By:

Saha, Rajesh;
Bhowmick, Brinda;
Baishya, Srimanta

Publication type:

Article

A power amplifier with bandwidth expansion and linearity enhancement in 130 nm complementary metal‐oxide‐semiconductor process.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2021, v. 31, n. 6, p. 1, doi. 10.1002/mmce.22626

By:

Cao, Cheng;
Liu, Jiangfan;
Li, Yubing;
Tan, Tao;
Huang, Zemeng;
Zhang, Ping;
Li, Qingwen;
Qi, Zihang;
Li, Xiuping

Publication type:

Article

Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2021, v. 31, n. 2, p. 1, doi. 10.1002/mmce.22513

By:

Alim, Mohammad A.;
Ali, Mayahsa M.;
Gaquiere, Christophe

Publication type:

Article

Passive intermodulation of printed dipole antennas: Modeling, evaluation, and experiment.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2020, v. 30, n. 8, p. 1, doi. 10.1002/mmce.22243

By:

Guo, Hao;
Wu, Dongwei;
Xie, Yongjun

Publication type:

Article

Hybrid harmonic‐intermodulation distortion behavioral model for shortwave power amplifiers.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2019, v. 29, n. 7, p. N.PAG, doi. 10.1002/mmce.21718

By:

Xu, Gaoming;
Liu, Taijun;
Ye, Yan;
Zhang, Xiupu

Publication type:

Article

Intermediate frequency variation in long‐range FMCW radar for harmonics cancellation.

Published in:

IET Radar, Sonar & Navigation (Wiley-Blackwell), 2020, v. 14, n. 5, p. 764, doi. 10.1049/iet-rsn.2019.0497

By:

Figueroa, Adrian;
Joram, Niko;
Ellinger, Frank

Publication type:

Article

2.1 GHz MOS mixer linearisation approach for IIP2 enhancement using multiple factor compensation.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 19, p. 1, doi. 10.1049/el.2013.0567

By:

J. Jiang;
Holburn, D. M.

Publication type:

Article

Dependence of power amplifier backoff on resource allocation for non-contiguous carrier aggregation.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 15, p. 1, doi. 10.1049/el.2013.1431

By:

Park, C. S.

Publication type:

Article

The Influence of FWM with AWG Multiplexor in DWDM System.

Published in:

Przegląd Elektrotechniczny, 2018, v. 94, n. 4, p. 113, doi. 10.15199/48.2018.04.28

By:

IVANIGA, Petr;
IVANIGA, Tomáš;
TURÁN, Ján;
OVSENÍK, Ľuboš;
MÁRTON, Michal;
SOLUS, Dávid;
ORAVEC, Jakub;
HUSZANÍK, Tomáš

Publication type:

Article

METHOD FOR DETERMINING THE RESPONSES FROM A NON-LINEAR SYSTEM USING THE VOLTERRA SERIES.

Published in:

Eastern-European Journal of Enterprise Technologies, 2020, v. 106, n. 9, p. 34, doi. 10.15587/1729-4061.2020.210754

By:

Ahmed, Mohammed Kassim;
Aziz, Samah Fakhri;
Alsaleem, Naors Y. Anad;
Sielivanov, K.;
Moskalets, M.

Publication type:

Article